JP2011515872A - 結晶太陽電池の表面クリーニング及び凹凸形成プロセス - Google Patents
結晶太陽電池の表面クリーニング及び凹凸形成プロセス Download PDFInfo
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- JP2011515872A JP2011515872A JP2011501953A JP2011501953A JP2011515872A JP 2011515872 A JP2011515872 A JP 2011515872A JP 2011501953 A JP2011501953 A JP 2011501953A JP 2011501953 A JP2011501953 A JP 2011501953A JP 2011515872 A JP2011515872 A JP 2011515872A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
図6は、製造ライン600の1つの実施形態の模式平面図であり、この製造ライン600は、上に説明したプロセスシーケンス100を行なうように適合させている。基本的に、製造ライン600は、システムコントローラ601と、メインフレーム619と、そして基板を、メインフレーム619内に配置される複数の処理チャンバの間で搬送するように適合させたロボット装置615と、を備える。図6に示す処理チャンバ(例えば、参照番号621〜633)の形状、幾何学的配置、または数は、本明細書において説明する本発明の範囲に制限を加えるものではない。
Claims (16)
- 太陽電池基板の表面を粗くする方法であって:
結晶シリコン基板の表面を、前記結晶シリコン基板を或る時間をかけて、表面改質添加剤を含むアルカリ性溶液に浸漬することにより粗くして、形成される粗さが、約1μm〜約10μmの平均深さを有するようにする工程を含む、方法。 - 前記表面改質添加剤は、ポリエーテルまたは非イオン性界面活性剤を含む濡れ剤と、そしてフェノールまたはフェノールの誘導体を含むエッチング添加剤と、を含む、請求項1に記載の方法。
- 前記表面改質添加剤は:
ポリエチレングリコール(PEG)、ドデシル硫酸ナトリウム(SDS)、ポリプロピレングリコール(PPG)、ポリエチレングリコール(PEG)及びポリプロピレングリコール(PPG)のコポリマーから成るグループから選択される濡れ剤と;
ポリ(4−ビニルフェノール)(PVP)、臭素化ポリ(4−ビニルフェノール)、ポリスチレンスルホン酸(PSSA)、Joncryl(登録商標)ポリマー、フェノール、オルトクレゾール、メタクレゾール、パラクレゾール、及びポリ(クレゾール)から成るグループから選択されるエッチング添加剤と、
を含む、請求項1に記載の方法。 - 前記表面改質添加剤は、約200〜約35,000の分子量を有するポリエチレングリコールを含む、請求項1に記載の方法。
- 前記アルカリ性溶液は、水中で約1重量パーセント〜約30重量パーセントの濃度の水酸化カリウムを含む水溶液であり、そして約65℃〜約95℃の温度に維持される、請求項1に記載の方法。
- 前記表面改質添加剤は、前記アルカリ性溶液中で約20ppm〜約20,000ppmの濃度を有する 請求項1に記載の方法。
- 更に:
前記基板を、弗酸を含む第1のプレクリーニング液でプレクリーニングする工程と;
前記表面に凹凸を形成する前に、前記基板をリンス洗浄して前記第1のプレクリーニング液を除去する工程と、
を含む、請求項1に記載の方法。 - 前記第1のプレクリーニング液は更に硝酸を含み、そして弗酸の濃度は、脱イオン化水中で約0.1重量パーセント〜約4重量パーセントである、請求項7に記載の方法。
- 太陽電池基板の表面を粗くする方法であって:
結晶シリコン基板を、弗酸を含む第1のプレクリーニング液に浸漬する工程と;
結晶シリコン基板の表面に凹凸を、前記結晶シリコン基板を、表面改質添加剤を含むアルカリ性溶液に浸漬することにより形成する工程と;
前記基板の前記凹凸形成表面を、弗酸及び塩酸を含むポストクリーニング液に浸漬する工程と、
を含む、方法。 - 更に:
(a)前記凹凸形成表面を、オゾン及び水を含む第1の溶液に、前記基板の前記凹凸形成表面をポストクリーニング液に浸漬する前に浸漬する工程であって、前記第1の溶液中のオゾンの濃度が約1ppm〜約30ppmである、前記浸漬する工程と;
(b)前記凹凸形成表面を前記ポストクリーニング液に浸漬する工程と;
(c)工程(a)及び工程(b)を少なくとも2回繰り返す工程と、
を含む、請求項9に記載の方法。 - 前記表面改質添加剤は、ポリエチレングリコール及びポリ(4−ビニルフェノール)から成るグループから選択される、請求項9に記載の方法。
- 前記結晶シリコン基板はn型結晶シリコン基板を含む、請求項9に記載の方法。
- 更に、前記形成凹凸の平均深さを、前記凹凸を前記表面に形成するプロセス中に少なくとも1回だけ測定する工程と、そして前記或る時間を前記測定平均深さに基づいて調整する工程と、を含む、請求項9に記載の方法。
- 基板凹凸形成プロセスを実行する装置であって:
1枚以上の基板を受け入れ、かつ前記1枚以上の基板をプレクリーニング液に浸すように構成される第1のウェット処理チャンバと;
エッチング液を処理チャンバ内に収容することにより、凹凸を前記1枚以上の基板の表面に形成する第2のウェット処理チャンバであって、前記エッチング液が、表面改質添加剤を含むアルカリ性溶液を含む、第2のウェット処理チャンバと;
前記1枚以上の基板を受け入れ、かつ前記1枚以上の基板を第1のポストクリーニング液に浸すように構成される第3のウェット処理チャンバと;
前記1枚以上の基板を、前記第1、第2、及び第3のウェット処理チャンバ内で位置決めするように適合させたロボット装置と、
を備える、装置。 - 更に:
前記1枚以上の基板のうちの1枚の基板の表面の表面特性を評価するように適合させた測定装置と;
前記プレクリーニング液、エッチング液、及び第1のポストクリーニング液に含まれる化学物質の濃度を前記表面の前記測定表面特性に基づいて制御する、そして/または前記1枚以上の基板を前記第1、第2、または第3のウェット処理チャンバ内で処理する時間を前記表面の前記測定表面特性に基づいて制御するように構成されるシステムコントローラと、
を備える、請求項14に記載の装置。 - 前記1枚以上の基板は、1バッチで5以上の枚数の基板を含み、そして前記第2のウェット処理チャンバは、複数バッチを1度に処理するように構成される、請求項14に記載の装置。
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PCT/US2009/037968 WO2009120631A2 (en) | 2008-03-25 | 2009-03-23 | Surface cleaning and texturing process for crystalline solar cells |
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WO2014148443A1 (ja) * | 2013-03-19 | 2014-09-25 | 長州産業株式会社 | 光起電力素子及びその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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FR2955707B1 (fr) | 2010-01-27 | 2012-03-23 | Commissariat Energie Atomique | Procede de realisation d'une cellule photovoltaique avec preparation de surface d'un substrat en silicium cristallin |
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US20120160296A1 (en) * | 2011-09-30 | 2012-06-28 | Olivier Laparra | Textured photovoltaic cells and methods |
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KR101985929B1 (ko) * | 2011-12-09 | 2019-06-05 | 삼성전자주식회사 | 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지 |
WO2013100318A1 (ko) * | 2011-12-26 | 2013-07-04 | 동우화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
US8916954B2 (en) | 2012-02-05 | 2014-12-23 | Gtat Corporation | Multi-layer metal support |
US8841161B2 (en) | 2012-02-05 | 2014-09-23 | GTAT.Corporation | Method for forming flexible solar cells |
CN102593247A (zh) * | 2012-02-16 | 2012-07-18 | 上海师范大学 | 一种表面具有平滑金字塔结构的太阳能电池单晶硅衬底的制备方法 |
US9716264B2 (en) | 2012-02-21 | 2017-07-25 | Samsung Sdi Co., Ltd. | Electrode for lithium secondary battery, method of manufacturing the electrode, and lithium secondary battery including the electrode |
DE102012101456A1 (de) * | 2012-02-23 | 2013-08-29 | Schott Solar Ag | Verfahren zum Herstellen einer Solarzelle |
CN104303317A (zh) * | 2012-05-11 | 2015-01-21 | 和光纯药工业株式会社 | 蚀刻液和使用了该蚀刻液的硅系基板的制造方法 |
US20130330871A1 (en) * | 2012-06-12 | 2013-12-12 | Twin Creeks Technologies, Inc. | Methods for texturing a semiconductor material |
US20140004701A1 (en) * | 2012-06-27 | 2014-01-02 | Rohm And Haas Electronic Materials Llc | Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance |
US8785294B2 (en) | 2012-07-26 | 2014-07-22 | Gtat Corporation | Silicon carbide lamina |
US11646388B2 (en) | 2012-09-14 | 2023-05-09 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US11495705B2 (en) | 2012-09-14 | 2022-11-08 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US9985160B2 (en) | 2012-09-14 | 2018-05-29 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US9099595B2 (en) | 2012-09-14 | 2015-08-04 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US10903383B2 (en) | 2012-09-14 | 2021-01-26 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US9997659B2 (en) | 2012-09-14 | 2018-06-12 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
JP2014096459A (ja) * | 2012-11-08 | 2014-05-22 | Mitsubishi Electric Corp | 太陽電池用半導体基板の表面処理方法、太陽電池用半導体基板の製造方法、太陽電池の製造方法及び太陽電池製造装置 |
TWI564585B (zh) | 2012-12-06 | 2017-01-01 | 大同股份有限公司 | 抗反射基板結構及其製作方法 |
CN103409808B (zh) * | 2013-09-04 | 2015-10-21 | 常州时创能源科技有限公司 | 多晶硅片制绒添加剂及其使用方法 |
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GB201315727D0 (en) * | 2013-09-04 | 2013-10-16 | Dow Corning | Coated silicon wafer |
US8951825B1 (en) | 2013-09-10 | 2015-02-10 | Palo Alto Research Center Incorporated | Solar cell texturing |
KR101462207B1 (ko) * | 2013-11-29 | 2014-11-25 | 국민대학교산학협력단 | 고분자 마스크를 이용한 실리콘 웨이퍼의 텍스처링 방법 |
CN103730347B (zh) * | 2014-01-10 | 2017-01-25 | 海南英利新能源有限公司 | 再利用硅片的制绒方法 |
US10593820B2 (en) | 2014-03-31 | 2020-03-17 | Kaneka Corporation | Solar cell module and method for manufacturing same |
US9548419B2 (en) * | 2014-05-20 | 2017-01-17 | Southern Taiwan University Of Science And Technology | Light emitting diode chip having multi microstructure substrate surface |
US9837259B2 (en) | 2014-08-29 | 2017-12-05 | Sunpower Corporation | Sequential etching treatment for solar cell fabrication |
CN107078179B (zh) * | 2014-09-30 | 2019-04-26 | 株式会社钟化 | 晶体硅太阳能电池的制造方法、及太阳能电池模块的制造方法 |
JP6259120B2 (ja) * | 2014-11-28 | 2018-01-10 | シャープ株式会社 | 半導体装置およびその製造方法 |
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US9570315B2 (en) * | 2015-03-18 | 2017-02-14 | United Microelectronics Corporation | Method of interfacial oxide layer formation in semiconductor device |
EP3139416B1 (en) * | 2015-09-07 | 2020-10-28 | IMEC vzw | Texturing monocrystalline silicon substrates |
CN105895714A (zh) * | 2016-06-22 | 2016-08-24 | 苏州协鑫集成科技工业应用研究院有限公司 | 平滑修饰液及平滑修饰方法及异质结太阳能电池硅片及异质结太阳能电池 |
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US20200044100A1 (en) * | 2017-02-09 | 2020-02-06 | RENA Technologies GmbH | Method For Texturing A Surface Of A Semiconductor Material And Device For Carrying Out The Method |
DE102017107432B4 (de) | 2017-04-06 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Auskoppelelements für ein optoelektronisches Bauelement und optoelektronisches Bauelement |
KR20180119969A (ko) | 2017-04-26 | 2018-11-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
DE102017212442A1 (de) | 2017-07-20 | 2019-01-24 | Singulus Technologies Ag | Verfahren und Vorrichtung zum Texturieren einer Oberfläche eines multikristallinen Diamantdraht-gesägten Siliziumsubstrats unter Verwendung von ozonhaltigem Medium |
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IT201900006736A1 (it) * | 2019-05-10 | 2020-11-10 | Applied Materials Inc | Procedimenti di fabbricazione di package |
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06188236A (ja) * | 1992-09-17 | 1994-07-08 | Internatl Business Mach Corp <Ibm> | シリコンの選択的エッチングのための方法および組成物 |
JPH07142436A (ja) * | 1993-11-18 | 1995-06-02 | Pure Retsukusu:Kk | シリコンウェーハ洗浄液及び該洗浄液を用いたシリコンウェーハの洗浄方法 |
JPH09246254A (ja) * | 1996-03-13 | 1997-09-19 | Toshiba Corp | シリコンの異方性エッチング液およびシリコンの異方性エッチング方法 |
JPH11233484A (ja) * | 1998-02-12 | 1999-08-27 | Sanyo Electric Co Ltd | 凹凸基板の製造方法 |
JP2000077382A (ja) * | 1998-06-18 | 2000-03-14 | Toshiba Corp | 機能素子及びその製造方法並びにこの機能素子を用いた光ディスク装置 |
JP2004063744A (ja) * | 2002-07-29 | 2004-02-26 | Shinryo Corp | シリコン基板のエッチング方法 |
JP2004349379A (ja) * | 2003-05-21 | 2004-12-09 | Hitachi Cable Ltd | 凹凸基板の製造方法 |
JP2005019605A (ja) * | 2003-06-25 | 2005-01-20 | Naoetsu Electronics Co Ltd | テクスチャー形成用エッチング液 |
JP2006093453A (ja) * | 2004-09-24 | 2006-04-06 | Siltronic Japan Corp | アルカリエッチング液及びアルカリエッチング方法 |
JP2006278409A (ja) * | 2005-03-28 | 2006-10-12 | Sanyo Electric Co Ltd | エッチング装置、テクスチャ基板の製造方法および光起電力装置の製造方法 |
JP2006344765A (ja) * | 2005-06-09 | 2006-12-21 | Shin Etsu Handotai Co Ltd | 太陽電池用基板の製造方法および太陽電池 |
JP2007258656A (ja) * | 2006-02-23 | 2007-10-04 | Sanyo Electric Co Ltd | 凹凸基板の製造方法及び光起電力素子の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2645587B2 (ja) * | 1989-03-29 | 1997-08-25 | 富士写真フイルム株式会社 | 微細パターン形成材料及び微細パターン形成方法 |
JP2740284B2 (ja) * | 1989-08-09 | 1998-04-15 | 三洋電機株式会社 | 光起電力素子 |
JPH03144659A (ja) * | 1989-10-31 | 1991-06-20 | Konica Corp | 平版印刷版材のエッチング液 |
JPH0697153A (ja) | 1992-09-11 | 1994-04-08 | Hitachi Ltd | エッチング液及びそれを用いたエッチング方法 |
JPH08262720A (ja) * | 1995-03-28 | 1996-10-11 | Hoechst Ind Kk | 可塑剤を含む放射線感応性組成物 |
AU6420398A (en) * | 1997-03-21 | 1998-10-20 | Sanyo Electric Co., Ltd. | Photovoltaic element and method for manufacture thereof |
DE19811878C2 (de) * | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
JPH11312665A (ja) * | 1998-04-27 | 1999-11-09 | Kyocera Corp | 半導体基板の粗面化法 |
AUPP699798A0 (en) * | 1998-11-06 | 1998-12-03 | Pacific Solar Pty Limited | Thin films with light trapping |
JP2004288920A (ja) * | 2003-03-24 | 2004-10-14 | Denso Corp | 半導体基板のエッチング方法 |
US7265037B2 (en) * | 2003-06-20 | 2007-09-04 | The Regents Of The University Of California | Nanowire array and nanowire solar cells and methods for forming the same |
US7354863B2 (en) * | 2004-03-19 | 2008-04-08 | Micron Technology, Inc. | Methods of selectively removing silicon |
US7301215B2 (en) * | 2005-08-22 | 2007-11-27 | Canon Kabushiki Kaisha | Photovoltaic device |
US7863157B2 (en) * | 2006-03-17 | 2011-01-04 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a layer transfer process |
-
2009
- 2009-03-23 WO PCT/US2009/037968 patent/WO2009120631A2/en active Application Filing
- 2009-03-23 KR KR1020107023816A patent/KR20100125448A/ko not_active Application Discontinuation
- 2009-03-23 CN CN2009801144089A patent/CN102017176A/zh active Pending
- 2009-03-23 US US12/383,350 patent/US8129212B2/en not_active Expired - Fee Related
- 2009-03-23 JP JP2011501953A patent/JP2011515872A/ja active Pending
- 2009-03-23 TW TW098109411A patent/TW201001508A/zh unknown
-
2011
- 2011-07-13 US US13/135,763 patent/US20110272625A1/en not_active Abandoned
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06188236A (ja) * | 1992-09-17 | 1994-07-08 | Internatl Business Mach Corp <Ibm> | シリコンの選択的エッチングのための方法および組成物 |
JPH07142436A (ja) * | 1993-11-18 | 1995-06-02 | Pure Retsukusu:Kk | シリコンウェーハ洗浄液及び該洗浄液を用いたシリコンウェーハの洗浄方法 |
JPH09246254A (ja) * | 1996-03-13 | 1997-09-19 | Toshiba Corp | シリコンの異方性エッチング液およびシリコンの異方性エッチング方法 |
JPH11233484A (ja) * | 1998-02-12 | 1999-08-27 | Sanyo Electric Co Ltd | 凹凸基板の製造方法 |
JP2000077382A (ja) * | 1998-06-18 | 2000-03-14 | Toshiba Corp | 機能素子及びその製造方法並びにこの機能素子を用いた光ディスク装置 |
JP2004063744A (ja) * | 2002-07-29 | 2004-02-26 | Shinryo Corp | シリコン基板のエッチング方法 |
JP2004349379A (ja) * | 2003-05-21 | 2004-12-09 | Hitachi Cable Ltd | 凹凸基板の製造方法 |
JP2005019605A (ja) * | 2003-06-25 | 2005-01-20 | Naoetsu Electronics Co Ltd | テクスチャー形成用エッチング液 |
JP2006093453A (ja) * | 2004-09-24 | 2006-04-06 | Siltronic Japan Corp | アルカリエッチング液及びアルカリエッチング方法 |
JP2006278409A (ja) * | 2005-03-28 | 2006-10-12 | Sanyo Electric Co Ltd | エッチング装置、テクスチャ基板の製造方法および光起電力装置の製造方法 |
JP2006344765A (ja) * | 2005-06-09 | 2006-12-21 | Shin Etsu Handotai Co Ltd | 太陽電池用基板の製造方法および太陽電池 |
JP2007258656A (ja) * | 2006-02-23 | 2007-10-04 | Sanyo Electric Co Ltd | 凹凸基板の製造方法及び光起電力素子の製造方法 |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9397242B2 (en) | 2011-03-30 | 2016-07-19 | Panasonic Intellectual Property Management Co., Ltd. | Silicon substrate having textured surface, and process for producing same |
JP2013004618A (ja) * | 2011-06-14 | 2013-01-07 | Mitsubishi Electric Corp | シリコン基板のエッチング方法および太陽電池の発電素子 |
US9330986B2 (en) | 2011-08-02 | 2016-05-03 | Mitsubishi Electric Corporation | Manufacturing method for solar cell and solar cell manufacturing system |
JP5622937B2 (ja) * | 2011-08-02 | 2014-11-12 | 三菱電機株式会社 | 太陽電池セルの製造方法および太陽電池セル製造システム |
JPWO2013018194A1 (ja) * | 2011-08-02 | 2015-03-02 | 三菱電機株式会社 | 太陽電池セルの製造方法および太陽電池セル製造システム |
WO2013018194A1 (ja) * | 2011-08-02 | 2013-02-07 | 三菱電機株式会社 | 太陽電池セルの製造方法および太陽電池セル製造システム |
JP2013110327A (ja) * | 2011-11-22 | 2013-06-06 | Shinryo Corp | 太陽電池用シリコン基板の製造方法 |
JP2015514313A (ja) * | 2012-03-23 | 2015-05-18 | サンパワー コーポレイション | 太陽電池製造のためのガス状オゾン処理 |
WO2014024414A1 (ja) * | 2012-08-10 | 2014-02-13 | 第一工業製薬株式会社 | テクスチャー形成用エッチング液およびそれを用いたテクスチャー形成方法 |
JP6129455B1 (ja) * | 2012-08-10 | 2017-05-17 | 第一工業製薬株式会社 | シリコン基板の表面加工方法 |
JP2017118143A (ja) * | 2012-08-10 | 2017-06-29 | 第一工業製薬株式会社 | シリコン基板の表面加工方法 |
JPWO2014024414A1 (ja) * | 2012-08-10 | 2016-07-25 | 第一工業製薬株式会社 | テクスチャー形成用エッチング液およびそれを用いたテクスチャー形成方法 |
JP2014067748A (ja) * | 2012-09-24 | 2014-04-17 | Mitsubishi Electric Corp | 太陽電池用基板、その製造方法、太陽電池及びその製造方法 |
JP2014082285A (ja) * | 2012-10-15 | 2014-05-08 | Mitsubishi Electric Corp | 太陽電池およびその製造方法、太陽電池モジュール |
JP2014090087A (ja) * | 2012-10-30 | 2014-05-15 | Mitsubishi Electric Corp | 太陽電池の製造方法およびこれに用いられる太陽電池製造装置 |
JPWO2014148443A1 (ja) * | 2013-03-19 | 2017-02-16 | 長州産業株式会社 | 光起電力素子の製造方法 |
JP5945066B2 (ja) * | 2013-03-19 | 2016-07-05 | 長州産業株式会社 | 光起電力素子の製造方法 |
WO2014148443A1 (ja) * | 2013-03-19 | 2014-09-25 | 長州産業株式会社 | 光起電力素子及びその製造方法 |
JP2016523792A (ja) * | 2013-04-30 | 2016-08-12 | コーニング インコーポレイテッド | ガラス基板洗浄方法 |
JP2014229876A (ja) * | 2013-05-27 | 2014-12-08 | 株式会社カネカ | 結晶シリコン系太陽電池およびその製造方法、ならびに太陽電池モジュール |
JP2015088711A (ja) * | 2013-11-01 | 2015-05-07 | 日本酢ビ・ポバール株式会社 | テクスチャエッチング液、テクスチャエッチング液用添加剤液、テクスチャ形成基板及びテクスチャ形成基板の製造方法並びに太陽電池 |
JP2015088710A (ja) * | 2013-11-01 | 2015-05-07 | 日本酢ビ・ポバール株式会社 | エッチング液、エッチング液用添加剤液、凹凸基板及び凹凸基板の製造方法並びに太陽電池 |
WO2016063881A1 (ja) * | 2014-10-21 | 2016-04-28 | 攝津製油株式会社 | 半導体基板用エッチング液 |
JPWO2016063881A1 (ja) * | 2014-10-21 | 2017-08-31 | 攝津製油株式会社 | 半導体基板用エッチング液 |
US10106736B2 (en) | 2014-10-21 | 2018-10-23 | Settsu Oil Mill., Inc. | Etching agent for semiconductor substrate |
JP2016181629A (ja) * | 2015-03-24 | 2016-10-13 | 株式会社カネカ | 太陽電池用シリコン基板の製造装置および製造方法 |
WO2016152228A1 (ja) * | 2015-03-24 | 2016-09-29 | 株式会社カネカ | 太陽電池用結晶シリコン基板の製造方法、結晶シリコン系太陽電池の製造方法および結晶シリコン系太陽電池モジュールの製造方法 |
JPWO2016152228A1 (ja) * | 2015-03-24 | 2017-12-21 | 株式会社カネカ | 太陽電池用結晶シリコン基板の製造方法、結晶シリコン系太陽電池の製造方法および結晶シリコン系太陽電池モジュールの製造方法 |
US10333012B2 (en) | 2015-03-24 | 2019-06-25 | Kaneka Corporation | Method for manufacturing crystalline silicon substrate for solar cell, method for manufacturing crystalline silicon solar cell, and method for manufacturing crystalline silicon solar cell module |
WO2017188177A1 (ja) * | 2016-04-27 | 2017-11-02 | 攝津製油株式会社 | 半導体基板用エッチング液 |
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US20110272625A1 (en) | 2011-11-10 |
WO2009120631A3 (en) | 2010-01-07 |
US20090280597A1 (en) | 2009-11-12 |
CN102017176A (zh) | 2011-04-13 |
US8129212B2 (en) | 2012-03-06 |
WO2009120631A2 (en) | 2009-10-01 |
KR20100125448A (ko) | 2010-11-30 |
TW201001508A (en) | 2010-01-01 |
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