JP5330598B2 - 基板から汚染物質を除去するための方法および装置 - Google Patents
基板から汚染物質を除去するための方法および装置 Download PDFInfo
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- JP5330598B2 JP5330598B2 JP2012504850A JP2012504850A JP5330598B2 JP 5330598 B2 JP5330598 B2 JP 5330598B2 JP 2012504850 A JP2012504850 A JP 2012504850A JP 2012504850 A JP2012504850 A JP 2012504850A JP 5330598 B2 JP5330598 B2 JP 5330598B2
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- 239000000758 substrate Substances 0.000 title claims description 111
- 238000000034 method Methods 0.000 title claims description 60
- 239000000356 contaminant Substances 0.000 title description 18
- 239000000243 solution Substances 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 16
- 150000002739 metals Chemical class 0.000 claims description 16
- 150000002978 peroxides Chemical class 0.000 claims description 15
- 239000007864 aqueous solution Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910052742 iron Inorganic materials 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 238000007788 roughening Methods 0.000 claims description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- VKZRWSNIWNFCIQ-WDSKDSINSA-N (2s)-2-[2-[[(1s)-1,2-dicarboxyethyl]amino]ethylamino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)NCCN[C@H](C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-WDSKDSINSA-N 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 239000012141 concentrate Substances 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 238000007865 diluting Methods 0.000 claims description 2
- 150000007522 mineralic acids Chemical class 0.000 claims 4
- 239000002253 acid Substances 0.000 description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 34
- 239000008367 deionised water Substances 0.000 description 33
- 229910021641 deionized water Inorganic materials 0.000 description 33
- 238000004140 cleaning Methods 0.000 description 24
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 23
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 18
- 230000008569 process Effects 0.000 description 15
- 239000012535 impurity Substances 0.000 description 13
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
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- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 6
- 239000002738 chelating agent Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
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- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VYQMXBMNWDFBHM-UHFFFAOYSA-K 2-hydroxypropane-1,2,3-tricarboxylate tetramethylazanium Chemical compound C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.OC(CC([O-])=O)(CC([O-])=O)C([O-])=O VYQMXBMNWDFBHM-UHFFFAOYSA-K 0.000 description 4
- 230000009920 chelation Effects 0.000 description 4
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- 229910052759 nickel Inorganic materials 0.000 description 4
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- 239000002245 particle Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
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- 241000252506 Characiformes Species 0.000 description 3
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- DBNPDRYVYQWGFW-UHFFFAOYSA-N N.[Cu]=O Chemical compound N.[Cu]=O DBNPDRYVYQWGFW-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical group [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000013068 control sample Substances 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- IGBSXRIJNMDLFB-UHFFFAOYSA-N ethane-1,2-diamine;pentanedioic acid Chemical compound NCCN.OC(=O)CCCC(O)=O.OC(=O)CCCC(O)=O IGBSXRIJNMDLFB-UHFFFAOYSA-N 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 150000002357 guanidines Chemical class 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008236 biological pathway Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- HMVIRHRFSYPPCA-UHFFFAOYSA-N ethane-1,2-diamine propanedioic acid Chemical compound NCCN.OC(=O)CC(O)=O.OC(=O)CC(O)=O HMVIRHRFSYPPCA-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229940083094 guanine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- VACCAVUAMIDAGB-UHFFFAOYSA-N sulfamethizole Chemical compound S1C(C)=NN=C1NS(=O)(=O)C1=CC=C(N)C=C1 VACCAVUAMIDAGB-UHFFFAOYSA-N 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WIRAYEQAIVWWSO-UHFFFAOYSA-N triazanium 2-hydroxy-1,1,3-trimethylbutane-1,2,3-tricarboxylate Chemical compound CC(C(C(C(=O)[O-])(C)C)(O)C(=O)[O-])(C(=O)[O-])C.[NH4+].[NH4+].[NH4+] WIRAYEQAIVWWSO-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Description
Claims (19)
- 電気性能を向上させるために絶縁体または半導体基板から汚染金属を除去する方法であって、式(I):
- 前記曝露するステップに先立ってまたは前記曝露するステップと同時に、前記基板から生来の酸化物を除去するステップをさらに含む、請求項1に記載の方法。
- 前記式Iの化合物が5から1000ppmの間で存在する、請求項1または2に記載の方法。
- 前記式Iの化合物がエチレンジアミンジコハク酸であり、3回の出現時のXがNR4であり、化合物が10から500ppmの間で存在する、請求項3に記載の方法。
- 前記水溶液が過酸化物または無機酸の少なくとも一方を含む、請求項1から4に記載の方法。
- 前記水溶液がSC1またはSC2である、請求項5に記載の方法。
- 前記無機酸が塩酸、硝酸、またはフッ化水素酸である、請求項5に記載の方法。
- 前記水溶液が塩基である、請求項5に記載の方法。
- 前記塩基が水酸化カリウムまたは水酸化アンモニウムである、請求項5に記載の方法。
- 前記基板がシリコンであり、前記汚染金属が鉄である、請求項1から9に記載の方法。
- シリコン基板から汚染金属を除去する方法であって、
生来のシリコン基板から生来の酸化物を除去するステップと、
生来の酸化物の除去に続いて、式(I):
を含む、シリコン基板から汚染金属を除去する方法。 - 前記式Iの化合物が5から1000ppmの間で存在する、請求項11に記載の方法。
- 前記式Iの化合物がエチレンジアミンジコハク酸であり、3回の出現時のXがNR4であり、前記化合物が10から500ppmの間で存在する、請求項11または12に記載の方法。
- 前記水溶液が過酸化物または無機酸の少なくとも一方を含む、請求項11から13に記載の方法。
- 前記水溶液がSC1またはSC2である、請求項14に記載の方法。
- 前記無機酸が塩酸、硝酸またはフッ化水素酸である、請求項14に記載の方法。
- 前記水溶液が塩基である、請求項1に記載の方法。
- 電気性能を向上させるために絶縁体または半導体基板から汚染金属を除去する溶液を調製するキットであって、式(I):
- 前記式Iの化合物が5から1000ppmの間で存在する、請求項18に記載のキット。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16764109P | 2009-04-08 | 2009-04-08 | |
US61/167,641 | 2009-04-08 | ||
US24862009P | 2009-10-05 | 2009-10-05 | |
US61/248,620 | 2009-10-05 | ||
PCT/US2010/030349 WO2010118206A2 (en) | 2009-04-08 | 2010-04-08 | Process and apparatus for removal of contaminating material from substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012523706A JP2012523706A (ja) | 2012-10-04 |
JP5330598B2 true JP5330598B2 (ja) | 2013-10-30 |
Family
ID=42936872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012504850A Expired - Fee Related JP5330598B2 (ja) | 2009-04-08 | 2010-04-08 | 基板から汚染物質を除去するための方法および装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120129344A1 (ja) |
EP (1) | EP2417241A4 (ja) |
JP (1) | JP5330598B2 (ja) |
CN (1) | CN102405276A (ja) |
SG (1) | SG175830A1 (ja) |
WO (1) | WO2010118206A2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2022190830A1 (ja) | 2021-03-09 | 2022-09-15 | 信越半導体株式会社 | シリコンウェーハの洗浄方法、シリコンウェーハの製造方法及びシリコンウェーハ |
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DE102006008689B4 (de) * | 2006-02-24 | 2012-01-26 | Lanxess Deutschland Gmbh | Poliermittel und dessen Verwendung |
ATE546032T1 (de) * | 2006-09-13 | 2012-03-15 | Enthone | Artikel mit beschichtung aus elektrisch leitendem polymer und edel-/halbedelmetal sowie herstellungsverfahren dafür |
CN102498572B (zh) * | 2009-09-11 | 2016-03-02 | 第一太阳能有限公司 | 清洗碲化镉表面的方法和制造光伏器件的方法 |
WO2012154498A2 (en) * | 2011-05-06 | 2012-11-15 | Advanced Technology Materials, Inc. | Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications |
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2010
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- 2010-04-08 SG SG2011079779A patent/SG175830A1/en unknown
- 2010-04-08 US US13/263,639 patent/US20120129344A1/en not_active Abandoned
- 2010-04-08 JP JP2012504850A patent/JP5330598B2/ja not_active Expired - Fee Related
- 2010-04-08 CN CN2010800170534A patent/CN102405276A/zh active Pending
- 2010-04-08 WO PCT/US2010/030349 patent/WO2010118206A2/en active Application Filing
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EP2417241A4 (en) | 2014-10-15 |
CN102405276A (zh) | 2012-04-04 |
SG175830A1 (en) | 2011-12-29 |
WO2010118206A3 (en) | 2011-01-13 |
WO2010118206A2 (en) | 2010-10-14 |
JP2012523706A (ja) | 2012-10-04 |
EP2417241A2 (en) | 2012-02-15 |
US20120129344A1 (en) | 2012-05-24 |
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