JP5945066B2 - 光起電力素子の製造方法 - Google Patents
光起電力素子の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 66
- 229910052710 silicon Inorganic materials 0.000 claims description 66
- 239000010703 silicon Substances 0.000 claims description 66
- 238000005530 etching Methods 0.000 claims description 54
- 239000010409 thin film Substances 0.000 claims description 35
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 34
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 30
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 27
- 239000011259 mixed solution Substances 0.000 claims description 11
- 239000003513 alkali Substances 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 9
- 230000000996 additive effect Effects 0.000 claims description 9
- 239000004094 surface-active agent Substances 0.000 claims description 8
- 150000001298 alcohols Chemical class 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 claims description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 230000000007 visual effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
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- 238000010792 warming Methods 0.000 description 1
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Description
また、特許文献1(9頁20〜31行目)に、異方性エッチングに2重量%の水酸化ナトリウムと、気泡の発生を抑えるイソプロピルアルコールを用いて深さが1〜10μm程度のピラミッドを形成することも開示されている。しかし、イソプロピルアルコールは気化するので注ぎ足す必要があり、作業環境に悪影響があるので厳重に管理する必要があることが記載されている。また、イソプロピルアルコールは高価であるため、コストが増大する。このような事情から、特許文献1には、1〜10μm程度の深さを有するピラミッド状の凸部を有する光起電力素子の作用、性能については全く開示されていない。
更に、ピラミッド状凹凸部の形状を大きくすると、より厚めなシリコン基板が必要となり、透明導電酸化物の上に形成する櫛形の集電極に使用する金属ペースト(通常、銀ペースト)の使用量が増加するという問題があることも判った。
なお、非特許文献1については後述する。
以下の式で定義され、前記ピラミッド状凹凸部を形成するピラミッドの対角線の平均長さが5μmより小さくなっている。
対角線の平均長さ=(2×視野範囲の面積/視野範囲のピラミッドの頂点数)0.5
第1の発明に係る光起電力素子においては、凹凸部の谷部に積極的にRを形成するエッチング処理は行っていない。
なお、特許文献1に記載されている幅5μm深さ5μmのピラミッド状の凹凸部の場合、ここでいう幅とは辺の長さを指しているものと推測され、この場合の対角線の平均長さは約7μmとなる。
第4の発明に係る光起電力素子は、第1〜第3の発明に係る光起電力素子において、表面にフィンガー電極が形成されており、該フィンガー電極の厚みは1〜5μmの範囲にある。
第6の発明に係る光起電力素子は、第1〜第5の発明に係る光起電力素子において、開放電圧が720mV以上である。
そして、第8の発明に係る太陽電池システムは、第7の発明に係る太陽電池モジュールを備えている。
エッチング前シリコン基板に対して、イソプロピルアルコールを使用しないで、アルカリと、アルコール誘導体及び界面活性剤の少なくとも1種類を含む添加剤と、水との混合液を用いた前記異方性エッチングをすることにより、前記シリコン基板を得るエッチング工程を有し、以下の式で定義され、前記ピラミッド状凹凸部を形成するピラミッドの対角線の平均長さが5μmより小さくなっている。
対角線の平均長さ=(2×視野範囲の面積/視野範囲のピラミッドの頂点数)0.5
更に、エッチング量が少ないので、より薄いシリコン基板を使用でき、シリコン基板の材料が少なくて済む。
そして、凹凸部の深さ(高さ)も小さくなるので、光起電力素子の表面に形成する集電極の厚みも薄くて済み、集電極の材料(例えば、銀)の使用量も減らすことができる。
図1に示すように、本発明の一実施の形態に係る光起電力素子10は、非晶質系シリコン薄膜ヘテロ接合太陽電池を構成し、中央にn型単結晶のシリコン基板(c−Si、以下、単にシリコン基板という)11を有し、その上面に、真性非晶質系シリコン薄膜層(i層)12を介してp型非晶質系シリコン薄膜層13を、シリコン基板11の下面に真性非晶質系シリコン薄膜層(i層)14を介してn型非晶質系シリコン薄膜層15を備え、p型非晶質系シリコン薄膜層13の上及びn型非晶質系シリコン薄膜層15の下にそれぞれ透明導電酸化物(Transparent Conductive Oxide)16、17を有し、それぞれの表面に櫛形の集電極(フインガー電極)18、19を有している。
また、エッチング液の濃度、エッチング時間、温度については、表1の通りである。
ピラミッド状凹凸部A〜Eのピラミッドの対角線の平均長さLと、短絡電流密度、開放電圧、フィルファクタ、変換効率との関係を表2に示す。
対角線の平均長さが7μmの(A)と5μmの(B)には、凹凸部が形成されていない(100)面がシリコン基板表面に残っている箇所(図中の実線丸枠)があり、少数キャリアライフタイムの減少要因となっているものと考えられる。
本発明は前記した実施の形態に限定されるものではなく、本発明の要旨を変更しない範囲でその構成を変更することもできる。例えば、本発明における「非晶質系」とは、非晶質体のみならず、微結晶体を含む意味であり、適時入れ替えることも可能である。
例えば、前記実施の形態においては、シリコン基板の表裏面から受光して発電が可能であるが、表側のみから受光する場合は、裏面の構成をより簡略にすることができる。
Claims (2)
- 異方性エッチングにより表面に多数のピラミッド状凹凸部が形成されたシリコン基板と、前記ピラミッド状凹凸部上に化学気相成長法によって形成される非晶質系シリコン薄膜を備える光起電力素子の製造方法であって、
エッチング前シリコン基板に対して、イソプロピルアルコールを使用しないで、アルカリと、アルコール誘導体及び界面活性剤の少なくとも1種類を含む添加剤と、水との混合液を用いた前記異方性エッチングをすることにより、前記シリコン基板を得るエッチング工程、及び
前記シリコン基板の温度が180℃を超え220℃以下の状態での化学気相成長法によって、前記シリコン基板と直接接合する非晶質系シリコン薄膜を積層する積層工程
を有し、
前記アルコール誘導体がカルボン酸、アルデヒド又はエステルであり、
以下の式で定義され、前記ピラミッド状凹凸部を形成するピラミッドの対角線の平均長さが3μm以上5μm未満であり、
前記エッチング工程において、シリコン基板の表面に、前記凹凸部が形成されていない(100)面が残っている箇所及び凹凸部がオーバーエッチングされている箇所が存在しないようにエッチングし、かつ前記凹凸部の谷部を丸くする処理を行わないことを特徴とする光起電力素子の製造方法。
対角線の平均長さ=(2×視野範囲の面積/視野範囲のピラミッドの頂点数)0.5 - 請求項1に記載の光起電力素子の製造方法において、前記混合液のアルカリ濃度は、NaOH換算で0.2〜2質量%であり、
前記エッチング工程として、前記混合液に10〜20分、前記エッチング前シリコン基板を浸漬し、
前記エッチング工程と積層工程との間に、前記シリコン基板の洗浄処理を行う洗浄工程をさらに有することを特徴とする光起電力素子の製造方法。
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WO2016052046A1 (ja) * | 2014-09-30 | 2016-04-07 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュールおよびその製造方法 |
RU2590284C1 (ru) * | 2015-04-10 | 2016-07-10 | Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике при ФТИ им. А.Ф. Иоффе", ООО "НТЦ ТПТ" | Солнечный элемент |
RU2632267C2 (ru) * | 2016-03-10 | 2017-10-03 | Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике при ФТИ им. А.Ф. Иоффе", ООО "НТЦ ТПТ" | Структура фотопреобразователя на основе кристаллического кремния и линия по его производству |
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CN105144399A (zh) | 2015-12-09 |
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KR20150133243A (ko) | 2015-11-27 |
AU2014239493A1 (en) | 2015-10-29 |
TWI596790B (zh) | 2017-08-21 |
TW201448244A (zh) | 2014-12-16 |
EP2978026A4 (en) | 2016-12-07 |
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