JP2012238853A - 光電変換装置、及びその作製方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 170
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 163
- 239000002253 acid Substances 0.000 claims abstract description 20
- 239000012670 alkaline solution Substances 0.000 claims abstract description 13
- 239000000243 solution Substances 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 71
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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Abstract
【解決手段】単結晶シリコン基板の表面をアルカリ溶液に浸漬させてエッチングすることにより、微細な略四角錐状の複数の凸部、及び隣接する凸部間で構成される凹部からなる凹凸形状とし、凹凸が形成された単結晶シリコン基板を混酸液に浸漬させてエッチングすることにより、凸部の頂点を含み、凸部の一面及び該一面と対向する面を二等分する断面において、頂点は鈍角をなすように形成し、かつ、凹部の底が曲面をなすように形成する。
【選択図】図1
Description
本実施の形態では、本発明の一態様における光電変換装置に用いる単結晶シリコン基板を凹凸加工する方法について説明する。
本実施の形態では、実施の形態1で説明した凹凸を有する単結晶シリコン基板を用いて形成することのできる光電変換装置、及びその作製方法について説明する。
本実施の形態では、実施の形態2で説明した光電変換装置とは異なる構成の光電変換装置、及びその作製方法を説明する。
本実施の形態では、実施の形態1及び2で説明した光電変換装置とは異なる構成の光電変換装置、及びその作製方法を説明する。
110 第1の領域
130 第2の領域
150 絶縁層
170 第1の電極
190 第2の電極
200 単結晶シリコン基板
211 第1のシリコン半導体層
212 第2のシリコン半導体層
213 第3のシリコン半導体層
214 第4のシリコン半導体層
260 透光性導電膜
270 第1の電極
290 第2の電極
300 単結晶シリコン基板
311 第1の領域
312 第2の領域
321 第1の絶縁層
322 第2の絶縁層
370 第1の電極
390 第2の電極
Claims (10)
- 一対の電極間に、
一導電型を有する単結晶シリコン基板と、
前記単結晶シリコン基板の一方の面に設けられた前記単結晶シリコン基板とは逆の導電型を有する第1の領域と、
前記第1の領域上に設けられた絶縁膜と、
前記単結晶シリコンの他方の面に設けられた前記単結晶シリコン基板と同じ導電型で、前記単結晶シリコン基板よりもキャリア密度の高い第2の領域と、
を有し、
前記単結晶シリコン基板表面は、微細な略四角錐状の複数の凸部、及び隣接する前記凸部間で構成される凹部からなる凹凸形状であり、前記凸部の頂点を含み、前記凸部の一面及び該一面と対向する面を二等分する断面において、前記頂点は鈍角を成して形成されており、前記凹部の底は曲面をなして形成されていることを特徴とする光電変換装置。 - 一対の電極間に、
一導電型を有する単結晶シリコン基板と、
前記単結晶シリコン基板の一方の面に接する第1のシリコン半導体層と、
前記第1のシリコン半導体層に接し、前記単結晶シリコン基板とは逆の導電型を有する第2のシリコン半導体層と、
前記単結晶シリコン基板の他方の面に接する第3のシリコン半導体層と、
前記第3のシリコン半導体層に接し、前記単結晶シリコン基板と同じ導電型で、前記単結晶シリコン基板よりもキャリア密度の高い第4のシリコン半導体層と、
を有し、
前記単結晶シリコン基板表面は、微細な略四角錐状の複数の凸部、及び隣接する前記凸部間で構成される凹部からなる凹凸形状であり、前記凸部の頂点を含み、前記凸部の一面及び該一面と対向する面を二等分する断面において、前記頂点は鈍角を成して形成されており、前記凹部の底は曲面をなして形成されていることを特徴とする光電変換装置。 - 請求項2において、前記第1のシリコン半導体層、及び前記第3のシリコン半導体層は、i型の導電型を有する非晶質シリコン層であることを特徴とする光電変換装置。
- 請求項2または3において、前記第2のシリコン半導体層、及び前記第4のシリコン半導体層は、非晶質シリコン層または微結晶シリコン層であることを特徴とする光電変換装置。
- 一導電型を有する単結晶シリコン基板と、
前記単結晶シリコン基板の一方の面上に設けられた第1の絶縁層と、
前記単結晶シリコン基板の他方の面に設けられた前記単結晶シリコン基板とは逆の導電型を有する第1の領域、及び前記単結晶シリコン基板と同じ導電型で、前記単結晶シリコン基板よりもキャリア密度の高い第2の領域と、
前記単結晶シリコン基板の他方の面上に設けられた第2の絶縁層と、
前記第2の絶縁層上に設けられた前記第1の領域と接する第1の電極と、
前記第2の絶縁層上に設けられた前記第2の領域と接する第2の電極と、
を有し、
前記単結晶シリコン基板表面は、微細な略四角錐状の複数の凸部、及び隣接する前記凸部間で構成される凹部からなる凹凸形状であり、前記凸部の頂点を含み、前記凸部の一面及び該一面と対向する面を二等分する断面において、前記頂点は鈍角を成して形成されており、前記凹部の底は曲面をなして形成されていることを特徴とする光電変換装置。 - 請求項1乃至5のいずれか一項において、前記頂点の角度は、90°より大きく、120°以下であることを特徴とする光電変換装置。
- 表面に(100)面を有する単結晶シリコン基板の表面をアルカリ溶液に浸漬させてエッチングすることにより、微細な略四角錐状の複数の凸部、及び隣接する前記凸部間で構成される凹部からなる凹凸形状とし、
前記凹凸が形成された前記単結晶シリコン基板を混酸液に浸漬させてエッチングすることにより、前記凸部の頂点を含み、前記凸部の一面及び該一面と対向する面を二等分する断面において、前記頂点は鈍角をなすように形成し、かつ、前記凹部の底が曲面をなすように形成することを特徴とする光電変換装置の作製方法。 - 請求項7において、前記アルカリ溶液は、水酸化カリウム、または水酸化ナトリウムを含む水溶液であることを特徴とする光電変換装置の作製方法。
- 請求項7または8において、前記混酸液は、フッ酸、硝酸、及び酢酸を含むことを特徴とする光電変換装置の作製方法。
- 請求項7乃至9のいずれか一項において、前記頂点の角度は、90°より大きく、120°以下であることを特徴とする光電変換装置の作製方法。
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