JP2011514689A5 - - Google Patents

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JP2011514689A5
JP2011514689A5 JP2011500766A JP2011500766A JP2011514689A5 JP 2011514689 A5 JP2011514689 A5 JP 2011514689A5 JP 2011500766 A JP2011500766 A JP 2011500766A JP 2011500766 A JP2011500766 A JP 2011500766A JP 2011514689 A5 JP2011514689 A5 JP 2011514689A5
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nitride
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JP2011514689A (ja
JP5479446B2 (ja
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JP2011500766A 2008-03-19 2009-02-09 窒化物および炭化シリコンをベースとする集積デバイス、および窒化物をベースとする集積デバイスを製造する方法 Active JP5479446B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/051,303 2008-03-19
US12/051,303 US7898047B2 (en) 2003-03-03 2008-03-19 Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
PCT/US2009/000802 WO2009117045A1 (en) 2008-03-19 2009-02-09 Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices

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JP2011514689A JP2011514689A (ja) 2011-05-06
JP2011514689A5 true JP2011514689A5 (https=) 2012-05-24
JP5479446B2 JP5479446B2 (ja) 2014-04-23

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JP2011500766A Active JP5479446B2 (ja) 2008-03-19 2009-02-09 窒化物および炭化シリコンをベースとする集積デバイス、および窒化物をベースとする集積デバイスを製造する方法

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US (2) US7898047B2 (https=)
EP (2) EP2495759B1 (https=)
JP (1) JP5479446B2 (https=)
KR (1) KR101645740B1 (https=)
CN (1) CN101978489B (https=)
WO (1) WO2009117045A1 (https=)

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