KR101645740B1 - 집적 질화물 및 탄화 규소계 소자들 및 집적 질화물계 소자들의 제조 방법 - Google Patents

집적 질화물 및 탄화 규소계 소자들 및 집적 질화물계 소자들의 제조 방법 Download PDF

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KR101645740B1
KR101645740B1 KR1020107023218A KR20107023218A KR101645740B1 KR 101645740 B1 KR101645740 B1 KR 101645740B1 KR 1020107023218 A KR1020107023218 A KR 1020107023218A KR 20107023218 A KR20107023218 A KR 20107023218A KR 101645740 B1 KR101645740 B1 KR 101645740B1
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스캇 티. 쉐파드
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크리, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/0296—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties
    • H03H9/02976—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties with semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/035—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon carbide [SiC] technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020107023218A 2008-03-19 2009-02-09 집적 질화물 및 탄화 규소계 소자들 및 집적 질화물계 소자들의 제조 방법 Active KR101645740B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/051,303 2008-03-19
US12/051,303 US7898047B2 (en) 2003-03-03 2008-03-19 Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices

Publications (2)

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KR20110002033A KR20110002033A (ko) 2011-01-06
KR101645740B1 true KR101645740B1 (ko) 2016-08-04

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Country Status (6)

Country Link
US (2) US7898047B2 (https=)
EP (2) EP2495759B1 (https=)
JP (1) JP5479446B2 (https=)
KR (1) KR101645740B1 (https=)
CN (1) CN101978489B (https=)
WO (1) WO2009117045A1 (https=)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306266A (en) * 1992-12-21 1994-04-26 The Procter & Gamble Company Flexible spacers for use in disposable absorbent articles
US7898047B2 (en) * 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US7112860B2 (en) 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
JP2008311355A (ja) * 2007-06-13 2008-12-25 Rohm Co Ltd 窒化物半導体素子
JP5689869B2 (ja) * 2009-04-08 2015-03-25 エフィシエント パワー コンヴァーション コーポレーション エンハンスメントモードＧａＮＨＥＭＴデバイス、及びその製造方法
US8748244B1 (en) * 2010-01-13 2014-06-10 Hrl Laboratories, Llc Enhancement and depletion mode GaN HMETs on the same substrate
US9449833B1 (en) 2010-06-02 2016-09-20 Hrl Laboratories, Llc Methods of fabricating self-aligned FETS using multiple sidewall spacers
US8946724B1 (en) * 2010-06-02 2015-02-03 Hrl Laboratories, Llc Monolithically integrated self-aligned GaN-HEMTs and Schottky diodes and method of fabricating the same
JP5584090B2 (ja) * 2010-10-22 2014-09-03 トランスフォーム・ジャパン株式会社 Ｄｃ−ｄｃコンバータ
US8470652B1 (en) 2011-05-11 2013-06-25 Hrl Laboratories, Llc Monolithic integration of group III nitride enhancement layers
US20120313111A1 (en) * 2011-06-07 2012-12-13 Raytheon Company DIE ALIGNMENT WITH CRYSTALLOGRAPHIC AXES IN GaN-ON-SiC AND OTHER NON-CUBIC MATERIAL SUBSTRATES
JP5494622B2 (ja) * 2011-11-17 2014-05-21 株式会社豊田中央研究所 半導体装置
US10002957B2 (en) * 2011-12-21 2018-06-19 Power Integrations, Inc. Shield wrap for a heterostructure field effect transistor
US8614447B2 (en) * 2012-01-30 2013-12-24 International Business Machines Corporation Semiconductor substrates using bandgap material between III-V channel material and insulator layer
US8901606B2 (en) 2012-04-30 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer
US8946776B2 (en) 2012-06-26 2015-02-03 Freescale Semiconductor, Inc. Semiconductor device with selectively etched surface passivation
US10522670B2 (en) 2012-06-26 2019-12-31 Nxp Usa, Inc. Semiconductor device with selectively etched surface passivation
US10825924B2 (en) 2012-06-26 2020-11-03 Nxp Usa, Inc. Semiconductor device with selectively etched surface passivation
US9111868B2 (en) 2012-06-26 2015-08-18 Freescale Semiconductor, Inc. Semiconductor device with selectively etched surface passivation
JP2014086673A (ja) * 2012-10-26 2014-05-12 Mitsubishi Electric Corp モノリシック集積回路
US9337799B2 (en) 2012-11-02 2016-05-10 Qualcomm Mems Technologies, Inc. Selective tuning of acoustic devices
US8853743B2 (en) 2012-11-16 2014-10-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer
KR101736277B1 (ko) * 2012-12-12 2017-05-17 한국전자통신연구원 전계 효과 트랜지스터 및 그 제조 방법
US8946779B2 (en) 2013-02-26 2015-02-03 Freescale Semiconductor, Inc. MISHFET and Schottky device integration
US9590048B2 (en) * 2013-10-31 2017-03-07 Infineon Technologies Austria Ag Electronic device
JP2015177067A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置
US20150372096A1 (en) * 2014-06-20 2015-12-24 Ishiang Shih High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications
US9385224B2 (en) * 2014-08-13 2016-07-05 Northrop Grumman Systems Corporation Method of forming an integrated multichannel device and single channel device structure
KR101750158B1 (ko) * 2014-12-26 2017-06-22 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Hemt-호환가능 측면 정류기 구조물
US9653516B2 (en) * 2014-12-30 2017-05-16 Win Semiconductors Corp. Acoustic wave device structure, integrated structure of power amplifier and acoustic wave device, and fabrication methods thereof
TWI572034B (zh) * 2015-03-26 2017-02-21 江文章 III / nitride semiconductor device and method for producing the same
US9627473B2 (en) * 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
US20170069721A1 (en) 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
WO2017071635A1 (en) * 2015-10-30 2017-05-04 The Hong Kong University Of Science And Technology Semiconductor device with iii-nitride channel region and silicon carbide drift region
CN105609499B (zh) * 2016-03-11 2018-12-25 成都海威华芯科技有限公司 一种GaN集成器件
CN105655335A (zh) * 2016-03-11 2016-06-08 成都海威华芯科技有限公司 GaAs微电子集成器件
US10170611B1 (en) 2016-06-24 2019-01-01 Hrl Laboratories, Llc T-gate field effect transistor with non-linear channel layer and/or gate foot face
CN106898547A (zh) * 2017-03-31 2017-06-27 成都海威华芯科技有限公司 一种GaN声电集成器件的制作方法
KR102381395B1 (ko) * 2017-09-18 2022-04-01 한국전기연구원 절연 또는 반절연 ６Ｈ-ＳｉＣ 기판에 구현된 ＳｉＣ 반도체 소자 및 그 제조 방법
CN108091657B (zh) * 2017-12-27 2020-05-12 中国科学院长春光学精密机械与物理研究所 一种非易失性存储器单元、其制备方法及非易失性存储器
US11056483B2 (en) 2018-01-19 2021-07-06 Macom Technology Solutions Holdings, Inc. Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor
US10950598B2 (en) * 2018-01-19 2021-03-16 Macom Technology Solutions Holdings, Inc. Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor
CN108111142B (zh) * 2018-01-24 2020-11-10 清华大学 一种基于碳化硅衬底/氧化锌或掺杂氧化锌薄膜的声表面波器件及其制备方法
JP7316757B2 (ja) * 2018-02-23 2023-07-28 ローム株式会社 半導体装置
CN108682734B (zh) * 2018-04-04 2019-04-26 华南理工大学 一种集成外围电路的氮化镓基传感器及其制备方法
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
US10868162B1 (en) 2018-08-31 2020-12-15 Hrl Laboratories, Llc Self-aligned gallium nitride FinFET and method of fabricating the same
EP3624179A1 (en) 2018-09-13 2020-03-18 IMEC vzw Integration of a iii-v device on a si substrate
WO2020059765A1 (ja) * 2018-09-20 2020-03-26 株式会社村田製作所 弾性波装置
CN111371429B (zh) * 2018-12-26 2022-07-12 中芯集成电路（宁波）有限公司上海分公司 控制电路与声波滤波器的集成方法和集成结构
CN109742143A (zh) * 2018-12-29 2019-05-10 苏州汉骅半导体有限公司 集成增强型和耗尽型的hemt及其制造方法
CN110380702B (zh) * 2019-07-25 2020-04-10 深圳市汇芯通信技术有限公司 集成器件制造方法及相关产品
CN110676272A (zh) * 2019-09-18 2020-01-10 深圳第三代半导体研究院 一种半导体紫外光电探测器
US11038048B2 (en) * 2019-10-01 2021-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Gallium nitride-on-silicon devices
KR102721080B1 (ko) * 2019-10-08 2024-10-24 삼성전자주식회사 반도체 장치, 그 제조 방법 및 이를 포함하는 디스플레이 장치
EP3809457A1 (en) 2019-10-16 2021-04-21 IMEC vzw Co-integration of iii-v devices with group iv devices
CN114641931A (zh) * 2019-11-06 2022-06-17 株式会社村田制作所 弹性波装置
KR102319996B1 (ko) * 2020-01-03 2021-11-01 (주)와이솔 표면탄성파 소자 및 표면탄성파 소자의 제조방법
WO2021195506A1 (en) 2020-03-26 2021-09-30 Macom Technology Solutions Holdings, Inc. Microwave integrated circuits including gallium-nitride devices on silicon
US11437367B2 (en) * 2020-04-21 2022-09-06 Qualcomm Incorporated Heterogeneous integrated wideband high electron mobility transistor power amplifier with a single-crystal acoustic resonator/filter
US11769768B2 (en) * 2020-06-01 2023-09-26 Wolfspeed, Inc. Methods for pillar connection on frontside and passive device integration on backside of die
US11417644B2 (en) * 2020-06-17 2022-08-16 Macom Technology Solutions Holdings, Inc. Integration of multiple discrete GaN devices
CN112713183B (zh) * 2020-12-28 2022-06-10 光华临港工程应用技术研发(上海)有限公司 气体传感器的制备方法及气体传感器
US12218202B2 (en) * 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
CN114497114B (zh) * 2021-12-28 2025-06-27 深圳市汇芯通信技术有限公司 集成芯片及其制作方法和集成电路
CN115276583A (zh) * 2022-06-28 2022-11-01 深圳市汇芯通信技术有限公司 一种表面声波滤波器芯片及其制备方法
CN118016662A (zh) * 2022-11-10 2024-05-10 联华电子股份有限公司 整合制作工艺和结构
CN115996623B (zh) * 2022-12-14 2026-04-03 西安电子科技大学 外延级氮化物器件单片异构集成电路及其制作方法
US20240395804A1 (en) * 2023-05-26 2024-11-28 Cambridge Gan Devices Limited Power semiconductor device comprising a wide bandgap substrate
CN117712124B (zh) * 2024-02-05 2024-04-26 中国科学院长春光学精密机械与物理研究所 一种基于4H-SiC衬底的高性能CMOS器件
CN119153473B (zh) * 2024-08-27 2026-01-23 深圳尚阳通科技股份有限公司 集成型功率器件及其制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060081897A1 (en) * 2004-09-30 2006-04-20 The Furukawa Electric Co., Ltd. GaN-based semiconductor integrated circuit

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US526267A (en) * 1894-09-18 Island
US1749201A (en) 1928-05-28 1930-03-04 Paul W Prutzman Mercury-bromin derivative of fluorescein
US3955160A (en) * 1975-04-30 1976-05-04 Rca Corporation Surface acoustic wave device
JPS58197910A (ja) 1982-05-14 1983-11-17 Hitachi Ltd 弾性表面波素子
JPS62260420A (ja) * 1986-04-28 1987-11-12 シ−メンス、アクチエンゲゼルシヤフト 集積ｎｍｏｓ回路装置
US4912063A (en) * 1987-10-26 1990-03-27 North Carolina State University Growth of beta-sic thin films and semiconductor devices fabricated thereon
US4912064A (en) * 1987-10-26 1990-03-27 North Carolina State University Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
US5011549A (en) * 1987-10-26 1991-04-30 North Carolina State University Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4884001A (en) 1988-12-13 1989-11-28 United Technologies Corporation Monolithic electro-acoustic device having an acoustic charge transport device integrated with a transistor
US4946547A (en) * 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5292501A (en) * 1990-06-25 1994-03-08 Degenhardt Charles R Use of a carboxy-substituted polymer to inhibit plaque formation without tooth staining
US5200022A (en) * 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
US5265267A (en) * 1991-08-29 1993-11-23 Motorola, Inc. Integrated circuit including a surface acoustic wave transformer and a balanced mixer
JPH05183381A (ja) 1991-12-27 1993-07-23 Nippon Steel Corp 高周波回路基板および高周波回路素子
DE4219523A1 (de) * 1992-06-15 1993-12-16 Daimler Benz Ag Monolithisch integrierter Millimeterwellenschaltkreis und Verfahren zu dessen Herstellung
JPH0770736B2 (ja) * 1993-03-26 1995-07-31 株式会社ミリウェイブ 可変容量回路
JPH06303088A (ja) 1993-04-13 1994-10-28 Nippon Steel Corp 高周波回路素子
US5925895A (en) 1993-10-18 1999-07-20 Northrop Grumman Corporation Silicon carbide power MESFET with surface effect supressive layer
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5576589A (en) * 1994-10-13 1996-11-19 Kobe Steel Usa, Inc. Diamond surface acoustic wave devices
JPH10284762A (ja) 1995-02-16 1998-10-23 Asahi Chem Ind Co Ltd 表面弾性波を増幅するための積層構造及び増幅器
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
JP3047852B2 (ja) * 1997-04-04 2000-06-05 松下電器産業株式会社 半導体装置
US6377138B1 (en) * 1997-07-28 2002-04-23 Kabushiki Kaisha Toshiba Surface acoustic wave device with a layered conductive film and method of producing the same
US6063186A (en) * 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
TW398084B (en) 1998-06-05 2000-07-11 Hewlett Packard Co Multilayered indium-containing nitride buffer layer for nitride epitaxy
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6968514B2 (en) * 1998-09-30 2005-11-22 Cadence Design Systems, Inc. Block based design methodology with programmable components
KR100846089B1 (ko) * 1998-09-30 2008-07-14 카덴스 디자인 시스템즈 인크 설계 블록들 사이에 다수의 글루 로직 엘리먼트들을 분배하는 방법 및 글루 로직 분배 효율을 증가시키는 방법
KR100316383B1 (ko) * 1998-10-30 2002-02-19 윤덕용 모노리딕직접회로위에박막또는후막단결정압전소자를집적한단일칩라디오구조및그제조방법
JP3996282B2 (ja) 1998-11-11 2007-10-24 三洋電機株式会社 炭化珪素半導体装置の製造方法
US6518637B1 (en) * 1999-04-08 2003-02-11 Wayne State University Cubic (zinc-blende) aluminum nitride
US6396080B2 (en) * 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6265727B1 (en) * 1999-06-09 2001-07-24 Cree Lighting Company Solar blind photodiode having an active region with a larger bandgap than one or both if its surrounding doped regions
JP2001007379A (ja) * 1999-06-24 2001-01-12 Sharp Corp 窒化ガリウム系化合物半導体受光素子
US6300706B1 (en) * 1999-07-14 2001-10-09 The United States Of America As Represented By The Secretary Of The Army Compound semiconductor monolithic frequency sources and actuators
JP4850993B2 (ja) * 2000-01-25 2012-01-11 古河電気工業株式会社 半導体装置およびその製造方法
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP2001267555A (ja) * 2000-03-22 2001-09-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
GB2366104B (en) * 2000-05-01 2002-10-23 Murata Manufacturing Co Surface acoustic wave device, shear bulk wave transducer, and longitudinal bulk wave transducer
US6686616B1 (en) * 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
US6555946B1 (en) * 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US6569250B2 (en) * 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
US6828879B2 (en) * 2001-02-16 2004-12-07 Sanyo Electric Co., Ltd. Longitudinal coupled multiple mode surface acoustic wave filter
JP3648462B2 (ja) * 2001-04-27 2005-05-18 沖電気工業株式会社 弾性表面波分波器
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US6706114B2 (en) * 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
EP1278120A1 (de) * 2001-07-18 2003-01-22 Infineon Technologies AG Controller und Verfahren zum Ansteuern einer zentralen Verarbeitungseinheit für eine Speicheradressierung
EP2267784B1 (en) * 2001-07-24 2020-04-29 Cree, Inc. INSULATING GATE AlGaN/GaN HEMT
US20030022412A1 (en) * 2001-07-25 2003-01-30 Motorola, Inc. Monolithic semiconductor-piezoelectric device structures and electroacoustic charge transport devices
US20030030119A1 (en) * 2001-08-13 2003-02-13 Motorola, Inc. Structure and method for improved piezo electric coupled component integrated devices
JP3733420B2 (ja) * 2002-03-01 2006-01-11 独立行政法人産業技術総合研究所 窒化物半導体材料を用いたヘテロ接合電界効果型トランジスタ
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
US6936869B2 (en) * 2002-07-09 2005-08-30 International Rectifier Corporation Heterojunction field effect transistors using silicon-germanium and silicon-carbon alloys
US7386704B2 (en) * 2002-10-31 2008-06-10 Lockheed Martin Corporation Pipeline accelerator including pipeline circuits in communication via a bus, and related system and method
US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
US7898047B2 (en) 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US7064359B2 (en) 2003-08-20 2006-06-20 Matsushita Electric Industrial Co., Ltd. Switching semiconductor device and switching circuit
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7975094B2 (en) * 2004-04-15 2011-07-05 Marvell International Technology Ltd. Programmable I/O interface
US7202528B2 (en) * 2004-12-01 2007-04-10 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
DE602005010566D1 (de) 2004-08-26 2008-12-04 Matsushita Electric Industrial Co Ltd Halbleiterbauelement und modul damit
KR100616621B1 (ko) * 2004-09-24 2006-08-28 삼성전기주식회사 질화물계 반도체 장치 및 그 제조 방법
US7265399B2 (en) * 2004-10-29 2007-09-04 Cree, Inc. Asymetric layout structures for transistors and methods of fabricating the same
JP2006148546A (ja) 2004-11-19 2006-06-08 Eudyna Devices Inc 増幅回路及びその制御方法、並びに増幅回路モジュール
US20070018199A1 (en) * 2005-07-20 2007-01-25 Cree, Inc. Nitride-based transistors and fabrication methods with an etch stop layer
US7548112B2 (en) * 2005-07-21 2009-06-16 Cree, Inc. Switch mode power amplifier using MIS-HEMT with field plate extension
US7419892B2 (en) 2005-12-13 2008-09-02 Cree, Inc. Semiconductor devices including implanted regions and protective layers and methods of forming the same
US7569466B2 (en) * 2005-12-16 2009-08-04 International Business Machines Corporation Dual metal gate self-aligned integration
US20070221953A1 (en) * 2006-03-24 2007-09-27 Kozo Sakamoto Semiconductor device
JP5040170B2 (ja) * 2006-05-17 2012-10-03 三菱電機株式会社 半導体装置の製造方法
US20080197422A1 (en) * 2007-02-20 2008-08-21 National Central University Planar combined structure of a bipolar junction transistor and N-type/P-type metal semiconductor field-effect transistors and method for forming the same
MX378120B (es) 2015-10-16 2025-03-10 O&M Halyard Int Unlimited Co Metodo y sistema para cortar y colocar tiras metalicas adaptables en un proceso de fabricacion de mascarillas.
CN111370594B (zh) 2020-03-19 2023-04-07 重庆京东方显示技术有限公司 显示面板和显示装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060081897A1 (en) * 2004-09-30 2006-04-20 The Furukawa Electric Co., Ltd. GaN-based semiconductor integrated circuit

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