JP2011244011A - 空間温度分布の制御方法及び装置 - Google Patents
空間温度分布の制御方法及び装置 Download PDFInfo
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- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
【解決手段】プラズマ加工装置用のチャックは、温度制御式ベースと、断熱材と、フラット支持体と、加熱器とを含む。温度制御式ベースは、操作中、加工物の望ましい温度以下の温度に制御される。断熱材は、温度制御式ベースの少なくとも一部分に上に配置される。フラット支持体は、加工物を保持し且つ断熱材の上に配置される。加熱器は、フラット支持体内に埋め込まれ及び又はフラット支持体の下側に取り付けられる。加熱器は、複数の対応する加熱ゾーンを加熱する複数の加熱素子を含む。各加熱素子に供給される電力及び又は各々の加熱素子の温度は、独立に制御される。加熱器及びフラット支持体は、毎秒少なくとも1℃の組合せ温度割合変化を有する。
【選択図】図1
Description
304 断熱材
306 支持体
308 加熱器
309 センサ
310 ウェーハ
312 熱導体
314 サービスライン
Claims (17)
- 特定の層がエッチングされるためにウエハ温度が変化するマルチステッププラズマエッチング加工中、半導体ウエハを横切る空間温度を制御するための方法であって、
上に取り付けられた断熱材料の層を有するベースを、上記基板の温度以下である一定温度に維持し、
上記基板を、複数の空間領域を有しかつ上記断熱材料の層の上に取り付けられたフラット支持体の上面に、静電的にクランプし、
リアクタンスの局部濃度が上記ウエハを横切って変化するような条件下で、上記ウエハ上の層をプラズマエッチングし、
上記局部リアクタント濃度の変化を補償する半径方向の温度勾配を誘発するように、上記フラット支持体の各空間領域を、上記フラット支持体の下側に取り付けられた複数の加熱器で独立に加熱し、
上記マルチステッププラズマエッチング加工中、上記フラット支持体の少なくとも一つの空間領域の温度を毎秒少なくとも1℃の割合で変える、上記方法。 - 上記複数の空間領域の温度を、各領域に配置されたセンサで監視し、少なくとも一つの空間領域を少なくとも1℃/秒の割合で冷却することを更に含む、請求項1に記載の方法。
- 上記監視に基づいて各空間領域の温度を調整し、少なくとも1℃/秒の割合で温度を変化させる工程の間、上記少なくとも一つの空間領域の温度を10℃以下だけ変化させることを更に含む、請求項2に記載の方法。
- 上記複数の加熱器は、複数の熱電素子を含む、請求項1に記載の方法。
- プラズマから上記ウエハに当たる熱流は、2W/cm以下である、請求項1記載の方法。
- 上記ウエハの外縁が上記フラット支持体の外縁から半径方向外方へ延び、上記ウエハの上記外縁に当たる熱流は半径方向内方へ流れる、請求項1記載の方法。
- 上記断熱材料の層は、上記ベースと上記フラット支持体との間のサーマルインピーダンスブレークを提供し、上記断熱材料の層は、0.05W/mK〜0.20W/mKの熱伝導率を有する、請求項1記載の方法。
- 上記ベースは、上記基板の温度以下の10℃〜50℃の温度に維持される、請求項1記載の方法。
- プラズマ処理装置用のチャックであって、
加工物の所望温度以下の温度を有する温度制御式ベースを含み、上記加工物は、プラズマ加工を受け、上記プラズマ加工が上記加工物に温度の非均一性を引き起し、
上記ベースの上に配置された断熱材料の層と、
上記断熱材料の層の上に配置され、上記加工物を保持するためのフラット支持体と、
上記フラット支持体に結合され、上記フラット支持体の複数の加熱領域に対応する複数の加熱素子を含む加熱器と、を含み、
上記加熱素子は、上記プラズマ加工中、上記加工物全体にわたってほぼ均一なエッチング結果を達成するように独立に加熱され、
上記複数の加熱領域に対応する複数のセンサを含み、各センサは、上記領域の温度を測定し且つ対応する加熱領域の温度を表す信号を送信し、
上記信号を上記センサから受信するように構成されたコントローラを含み、該コントローラは、各加熱領域の温度を10℃以下だけ変化させるように、加熱領域毎にセットポイントに基づいて各平面加熱素子の電力を調整するように構成される、上記チャック。 - 各加熱素子に供給される電力は、互いに独立に制御される、請求項9に記載のチャック。
- 上記フラット支持体と上記加工物との間に配置された熱導体を更に含む、請求項9に記載のチャック。
- 上記温度制御式ベースは、20℃以下の一定温度に維持される、請求項9に記載のチャック。
- 上記加熱器は、複数の電気的抵抗加熱器を含む、請求項9に記載のチャック。
- 上記加熱器は、複数の誘導加熱器を含む、請求項9に記載のチャック。
- 上記加熱器は、複数の加熱ランプを含む、請求項9に記載のチャック。
- 上記加熱器は、複数の熱電気モジュールを含む、請求項9に記載のチャック。
- 上記フラット支持体は、静電気チャックを含む、請求項9に記載のチャック。
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Application Number | Priority Date | Filing Date | Title |
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US11/004,179 US20050211385A1 (en) | 2001-04-30 | 2004-12-02 | Method and apparatus for controlling spatial temperature distribution |
US11/004,179 | 2004-12-02 |
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JP2007544574A Division JP2008522446A (ja) | 2004-12-02 | 2005-12-01 | 空間温度分布の制御方法及び装置 |
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JP2007544574A Pending JP2008522446A (ja) | 2004-12-02 | 2005-12-01 | 空間温度分布の制御方法及び装置 |
JP2011176261A Pending JP2011244011A (ja) | 2004-12-02 | 2011-08-11 | 空間温度分布の制御方法及び装置 |
JP2014055288A Pending JP2014146822A (ja) | 2004-12-02 | 2014-03-18 | 空間温度分布の制御方法及び装置 |
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US (3) | US20050211385A1 (ja) |
JP (3) | JP2008522446A (ja) |
KR (1) | KR101109440B1 (ja) |
CN (2) | CN101111934A (ja) |
SG (3) | SG10201609601XA (ja) |
TW (1) | TWI481297B (ja) |
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Cited By (3)
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JP2021185605A (ja) * | 2015-08-06 | 2021-12-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | ウエハ処理システム向けの、ボルト留めされたウエハチャックの熱管理のシステム及び方法 |
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JP2008522446A (ja) | 2008-06-26 |
US20050211385A1 (en) | 2005-09-29 |
KR101109440B1 (ko) | 2012-01-31 |
CN101111934A (zh) | 2008-01-23 |
CN102122607B (zh) | 2013-03-20 |
SG10201609601XA (en) | 2016-12-29 |
TWI481297B (zh) | 2015-04-11 |
US20150187619A1 (en) | 2015-07-02 |
CN102122607A (zh) | 2011-07-13 |
US20090215201A1 (en) | 2009-08-27 |
SG10201408008QA (en) | 2015-01-29 |
US9824904B2 (en) | 2017-11-21 |
TW200633567A (en) | 2006-09-16 |
JP2014146822A (ja) | 2014-08-14 |
SG158101A1 (en) | 2010-01-29 |
WO2006068805A9 (en) | 2006-08-24 |
KR20070088758A (ko) | 2007-08-29 |
US8963052B2 (en) | 2015-02-24 |
WO2006068805A1 (en) | 2006-06-29 |
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