JP2011176336A - ダイヤモンド半導体素子およびその製造方法 - Google Patents
ダイヤモンド半導体素子およびその製造方法 Download PDFInfo
- Publication number
- JP2011176336A JP2011176336A JP2011084109A JP2011084109A JP2011176336A JP 2011176336 A JP2011176336 A JP 2011176336A JP 2011084109 A JP2011084109 A JP 2011084109A JP 2011084109 A JP2011084109 A JP 2011084109A JP 2011176336 A JP2011176336 A JP 2011176336A
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- Prior art keywords
- diamond
- thin film
- semiconductor
- single crystal
- type
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- Granted
Links
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 884
- 238000000034 method Methods 0.000 title abstract description 66
- 239000004065 semiconductor Substances 0.000 title description 429
- 239000013078 crystal Substances 0.000 claims abstract description 384
- 239000010409 thin film Substances 0.000 claims abstract description 381
- 239000000758 substrate Substances 0.000 claims description 152
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 72
- 238000004519 manufacturing process Methods 0.000 claims description 46
- 230000001681 protective effect Effects 0.000 claims description 39
- 238000010304 firing Methods 0.000 claims description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 abstract description 116
- 230000007547 defect Effects 0.000 abstract description 39
- 239000012535 impurity Substances 0.000 abstract description 21
- 238000005087 graphitization Methods 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 description 172
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- 239000002019 doping agent Substances 0.000 description 124
- 239000007789 gas Substances 0.000 description 104
- 238000002360 preparation method Methods 0.000 description 65
- 239000011777 magnesium Substances 0.000 description 56
- 239000010931 gold Substances 0.000 description 49
- 239000011575 calcium Substances 0.000 description 44
- 239000011701 zinc Substances 0.000 description 43
- 229910052749 magnesium Inorganic materials 0.000 description 35
- 238000005468 ion implantation Methods 0.000 description 33
- 238000005259 measurement Methods 0.000 description 33
- 229910052782 aluminium Inorganic materials 0.000 description 32
- 239000002994 raw material Substances 0.000 description 31
- 229910052793 cadmium Inorganic materials 0.000 description 30
- 229910052791 calcium Inorganic materials 0.000 description 30
- 229910052733 gallium Inorganic materials 0.000 description 30
- 229910052738 indium Inorganic materials 0.000 description 30
- 238000007796 conventional method Methods 0.000 description 25
- 229910052790 beryllium Inorganic materials 0.000 description 24
- 230000005669 field effect Effects 0.000 description 24
- 229910052744 lithium Inorganic materials 0.000 description 24
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 22
- 125000004432 carbon atom Chemical group C* 0.000 description 22
- 238000010586 diagram Methods 0.000 description 22
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- 238000005229 chemical vapour deposition Methods 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 19
- 239000010410 layer Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 17
- 229910052725 zinc Inorganic materials 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 229910052796 boron Inorganic materials 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 230000001133 acceleration Effects 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 230000003321 amplification Effects 0.000 description 12
- 230000007423 decrease Effects 0.000 description 12
- 238000003199 nucleic acid amplification method Methods 0.000 description 12
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000011780 sodium chloride Substances 0.000 description 11
- 239000012495 reaction gas Substances 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 125000002524 organometallic group Chemical group 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000001308 synthesis method Methods 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 description 3
- UJYLYGDHTIVYRI-UHFFFAOYSA-N cadmium(2+);ethane Chemical compound [Cd+2].[CH2-]C.[CH2-]C UJYLYGDHTIVYRI-UHFFFAOYSA-N 0.000 description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- AEUKDPKXTPNBNY-XEYRWQBLSA-N mcp 2 Chemical compound C([C@@H](C(=O)N[C@@H](CS)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CCCNC(N)=N)C(=O)NCC(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CS)C(=O)N[C@@H](CS)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCNC(N)=N)C(O)=O)NC(=O)CNC(=O)[C@H](C)NC(=O)[C@H](CCCNC(N)=N)NC(=O)[C@H](CCCNC(N)=N)NC(=O)[C@H](CCC(O)=O)NC(=O)[C@H](CC(C)C)NC(=O)[C@H]1N(CCC1)C(=O)[C@H](CC(C)C)NC(=O)[C@H](CS)NC(=O)[C@H](CC(C)C)NC(=O)[C@H](C)NC(=O)[C@H](CCCNC(N)=N)NC(=O)[C@H](CCCNC(N)=N)NC(=O)[C@H](CS)NC(=O)[C@H](C)NC(=O)[C@H](CS)NC(=O)[C@@H](NC(=O)[C@@H](N)C(C)C)C(C)C)C1=CC=CC=C1 AEUKDPKXTPNBNY-XEYRWQBLSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- -1 DEZn) Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- 238000005136 cathodoluminescence Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000003852 thin film production method Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- 239000011592 zinc chloride Substances 0.000 description 2
- 235000005074 zinc chloride Nutrition 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- BLHLJVCOVBYQQS-UHFFFAOYSA-N ethyllithium Chemical compound [Li]CC BLHLJVCOVBYQQS-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- XBEREOHJDYAKDA-UHFFFAOYSA-N lithium;propane Chemical compound [Li+].CC[CH2-] XBEREOHJDYAKDA-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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Abstract
【解決手段】ダイヤモンドが安定な高圧力下でアニールを行う。これにより、結晶中に含まれる格子欠陥等が回復、除去され、ダイヤモンド結晶薄膜を高品質化する事ができる。「(ダイヤモンドが)安定な、安定に」とは、ダイヤモンドがグラファイト化せずにダイヤモンドの状態を保つ状態を指す。ダイヤモンドが安定にアニール出来る領域内でアニールを行う温度(アニール温度、とも呼ぶ)Tおよびアニールを行う圧力(アニール圧力、とも呼ぶ)Pが決定される。この領域は、図21に示される、P>0.71+0.0027TまたはP=0.71+0.0027Tを満たし、なおかつP≧1.5GPaの領域である。このような領域は、図21中の斜線部分である。
【選択図】図21
Description
(実施形態1)
図1A、1Bは、本発明の実施形態1に係るダイヤモンド半導体素子の構造図である。図1Bの断面図に示したように、単結晶ダイヤモンド基板1−1の上に、単結晶ダイヤモンド薄膜1−2が形成されている。単結晶ダイヤモンド薄膜1−2の中には、二次元の正孔または電子チャンネル1−3が形成されている。そして、単結晶ダイヤモンド基板1−1の面方位と単結晶ダイヤモンド基板1−1の結晶軸[001]方向との成す角度をαs、単結晶ダイヤモンド薄膜1−2の面方位と単結晶ダイヤモンド薄膜1−2の結晶軸[001]方向との成す角度をαd、チャンネル1−3の面方位と単結晶ダイヤモンド薄膜1−2の結晶軸[001]方向との成す角度をαcとする。図1Aの上面図に示したように、単結晶ダイヤモンド薄膜1−2の表面上には、ソース電極1−4、ゲート電極1−5、ドレイン電極1−6がそれぞれ形成されている。単結晶ダイヤモンド薄膜1−2の内部に形成されるチャンネル1−3は、点線で示してある。ゲート電極1−5の長手方向
(実施形態2)
図2は、本発明の実施形態2に係るダイヤモンド半導体素子の構造を示す図である。本実施形態の構造は、大電力動作に適した構造である。本実施形態においては、ゲート電極を、競技場のトラックの形状に配置している。単結晶ダイヤモンド基板1−11の上に、単結晶ダイヤモンド薄膜1−12、並びに、単結晶ダイヤモンド薄膜の内部に二次元の正孔もしくは電子チャンネル1−13が形成されている。図2に示したように、チャンネルは小判型の形状をしている。そして、単結晶ダイヤモンド薄膜1−12の表面上には、ソース電極1−14、ゲート電極1−15、ドレイン電極1−16がチャンネル1−13の上方に形成されている。最内部にある小判型形状のドレイン電極1−16の周囲を囲むようにして、外周に向かって順次、ゲート電極1−15、およびソース電極1−14が形成されている。
(実施形態3)
図7A〜Jに、本発明の一実施形態に係るダイヤモンド半導体素子の作製工程を示す。ダイヤモンド単結晶であって、その表面に平行な2次元的な正孔チャンネルを有する薄膜2−1(以降、ダイヤモンド単結晶薄膜2−1と記す)を用意する(図7A)。ダイヤモンド単結晶薄膜2−1の表面全体に、厚さが0.1μmとなるようにAuを蒸着させ、Au薄膜2−2Bを形成する(図7B)。次にAu薄膜2−2B上のゲート電極を設ける領域に20μm幅でレジスト2−3を塗布し(図7C)、その上から試料の表面全面にAu薄膜2−2Tを蒸着させる(図7D)。このとき、Au薄膜2−2Tの厚さは0.4μmである。
本発明の一実施形態は、ダイヤモンド結晶薄膜をダイヤモンドが安定な高圧力下で十分な温度を与えて焼成(アニール)する事を大きな特徴とする。ダイヤモンド結晶薄膜の結晶性を良くする為の試みは、真空中、1000℃以上の高温アニールを用いて行なわれている(非特許文献5参照)が、ダイヤモンドは元来1.5Gpa以上の超高圧化で安定である為、高温真空アニールでは劣化が起こる。そこで、本発明の一実施形態では、ダイヤモンドが安定な高圧力下でアニールを行う。これにより、結晶中に含まれる格子欠陥等が回復、除去され、ダイヤモンド結晶薄膜を高品質化する事ができる。
また、基板上に形成されるダイヤモンド結晶薄膜も、ダイヤモンド単結晶薄膜でも良いし、ダイヤモンド多結晶薄膜であっても良い。
本発明の実施例1によるダイヤモンド薄膜の作製方法について図15A〜15Dを用いて説明する。面方位が(100)であるダイヤモンド単結晶基板3−11を用意する(図15A)。次いで、ダイヤモンド単結晶基板3−11上にマイクロ波プラズマCVD装置を用い、メタンを反応ガスとし、基板温度700℃でダイヤモンド単結晶薄膜3−12を1−5μm程度積層する(図15B)。このようにして形成されたダイヤモンド単結晶薄膜には、欠陥や不純物が含まれていることがある。本実施例では、マイクロ波プラズマCVD法を用いているが、ダイヤモンド薄膜が形成できる手法であれば成長方法は問わない。
これらの結果から、基板に形成されたダイヤモンド結晶薄膜に対して高圧高温アニールを行うことにより、ダイヤモンド結晶薄膜中の欠陥が減少し、ダイヤモンド結晶薄膜が高品質化されている事がわかる。このとき、アニール温度およびアニール圧力は、ダイヤモンドが安定となるように設定されているので、ダイヤモンド結晶薄膜の劣化を抑えることができる。さらに、ダイヤモンドが安定にアニールできる領域である限り、アニール温度は高くすることができるので、更なる欠陥の減少を図ることができる。
本発明の実施例2によるダイヤモンド薄膜の作製方法について図16A〜16Dを用いて説明する。面方位が(100)であるダイヤモンド単結晶基板3−21を用意する(図16A)。次いで、ダイヤモンド単結晶基板3−21上にマイクロ波プラズマCVD装置を用い、メタンを反応ガスとし、基板温度700℃でダイヤモンド単結晶薄膜3−22を1−5μm程度積層する(図16B)。このようにして形成されたダイヤモンド単結晶薄膜には、欠陥や不純物が含まれていることがある。また、本実施例では、上述のようにして作製されたダイヤモンド単結晶薄膜3−22が形成されたダイヤモンド単結晶基板3−21を2枚用意する。
このように、本実施例では、2つのダイヤモンド単結晶薄膜3−22の表面が接触するように重ね合わせることができれば、いずれの手段を用いても良い。
本発明の実施例3によるダイヤモンド薄膜の作製方法について図17A〜17Fを用いて説明する。面方位が(100)であるダイヤモンド単結晶基板3−31を用意する(図17A)。次いで、ダイヤモンド単結晶基板3−31上にマイクロ波プラズマCVD装置を用い、メタンを反応ガスとし、基板温度700℃でダイヤモンド単結晶薄膜3−32を1−5μm程度積層する(図17B)。このようにして形成されたダイヤモンド単結晶薄膜には、欠陥や不純物が含まれていることがある。
本発明の実施例4によるダイヤモンド薄膜の作製方法について図18A〜18Fを用いて説明する。面方位が(100)であるダイヤモンド単結晶基板3−41を用意する(図18A)。次いで、ダイヤモンド単結晶基板3−41上にマイクロ波プラズマCVD装置を用い、メタンを反応ガスとし、基板温度700℃でダイヤモンド単結晶薄膜3−42を1−5μm程度積層する(図18B)。このようにして形成されたダイヤモンド単結晶薄膜には、欠陥や不純物が含まれていることがある。
また、本実施例では合金としてチタン−アルミニウム合金を用いたが、Pt,Ti,W,Pd,Moのうち少なくとも1種の金属を含む合金であれば良い。
本発明の実施例5によるダイヤモンド薄膜の作製方法について図19A〜19Dを用いて説明する。面方位が(111)であるダイヤモンド単結晶基板3−51を用意する(図19A)。次いで、ダイヤモンド単結晶基板3−51上にマイクロ波プラズマCVD装置を用い、メタンを反応ガスとし、基板温度700℃で、面方位が(111)であるダイヤモンド単結晶薄膜3−52を1−5μm程度積層する(図19B)。このようにして形成されたダイヤモンド単結晶薄膜には、欠陥や不純物が含まれていることがある。
本発明の実施例6によるダイヤモンド薄膜の作製方法について図20A〜20Dを用いて説明する。面方位が(100)であるダイヤモンド単結晶基板3−61を用意する(図20A)。ダイヤモンド単結晶基板3−61上にマイクロ波プラズマCVD装置を用い、メタンを反応ガス(ガス濃度0.5%)とし、基板温度650−700℃でダイヤモンド単結晶薄膜3−62を1−5μm程度積層する(図20B)。本実施例では、ダイヤモンド結晶薄膜の成長中の基板温度(ダイヤモンド結晶薄膜を形成する際の、基板を熱するための温度)、メタン流量等を制御しているので、平均自乗粗さで1μm2の範囲で30nm以下の表面平坦性を有するダイヤモンド結晶薄膜を得ることができる。
(実施形態4)
マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、ダイヤモンド単結晶(001)面方位上に、1.0μmの厚さの本発明のダイヤモンド半導体膜を成長させる。反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。ここで、ドーパントガスには、Alを含む有機金属原料である、トリメチルアルミニウム((CH3)3Al:TMAl)およびトリエチルアルミニウム((C2H5)3Al:TEAl)のいずれかを用いる。または、このドーパントガスを用いる代わりに、固体のAlをプラズマ中に挿入し、気化したAlをドーパントガスとして使用することもできる。
x(ppm)×1017=y(cm‐3) ……… (1)
となる。
ドーパントをBeにし、イオン注入法により、加速電圧150kV、注入量1015cm‐2の条件でダイヤモンド単結晶にBeドーパントを注入してBe不純物ドープダイヤモンドを作製することができる。このBe不純物ドープダイヤモンドは、イオン注入法の他に、固体のBeをプラズマ中に挿入し、気化したBeをドーパントガスとするマイクロ波プラズマ化学気相堆積法を用いて作製することができる。そのマイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、固体のBe、残部H2なる反応ガスを全流量300ccmを原料として、ダイヤモンド単結晶(001)面方位上に、1.0μmの厚さの本発明のダイヤモンド半導体膜を成長させる。ここで反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。
x(ppm)×1017=y(cm‐3) ……… (1)
になる。
ドーパントをCaにし、イオン注入法により、加速電圧150kV、注入量1015cm‐2の条件でダイヤモンド単結晶にCaドーパントを注入してCa不純物ドープダイヤモンドを作製することができる。このCa不純物ドープダイヤモンドは、イオン注入法の他に、マイクロ波プラズマ化学気相堆積法を用いて作製することができる。マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、ダイヤモンド単結晶(001)面方位上に、1.0μmの厚さの本発明のダイヤモンド半導体膜を成長させる。反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。ここでドーパントガスには、塩化カルシウムCaCl2を用いる。または、このドーパントガスを用いる代わりに、固体のCaをプラズマ中に挿入し、気化したCaをドーパントガスとして使用することもできる。
x(ppm)×1017=y(cm‐3) ……… (1)
になる。
マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、ダイヤモンド単結晶(001)面方位上に、1.0μmの厚さの本発明のダイヤモンド半導体膜を成長させる。反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。ここで、ドーパントガスには、Cdを含む有機金属原料である、ジメチルカドミニウム((CH3)2Cd:DMCd)およびジエチルカドミニウム((C2H5)2Cd:DECd)のいずれかを用いる。
x(ppm)×1017=y(cm‐3) ……… (1)
になる。
マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、ダイヤモンド単結晶(001)面方位上に、1.0μmの厚さの本発明のダイヤモンド半導体膜を成長させる。反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。ここで、ドーパントガスには、Gaを含む有機金属原料である、トリメチルガリウム((CH3)3Ga:TMGa)またはトリエチルガリウム((C2H5)3Ga:TEGa)を用いる。
x(ppm)×1017=y(cm‐3) ……… (1)
になる。
マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、ダイヤモンド単結晶(001)面方位上に、1.0μmの厚さの本発明のダイヤモンド半導体膜を成長させる。反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。ここで、ドーパントガスには、Inを含む有機金属原料である、トリメチルインジウム((CH3)3In:TMIn)、またはトリエチルインジウム((C2H5)3In:TEIn)を用いる。
x(ppm)×1017=y(cm‐3) ……… (1)
になる。
ドーパントをLiにし、イオン注入法により、加速電圧150kV、注入量1015cm‐2の条件でダイヤモンド単結晶にLiドーパントを注入してLi不純物ドープダイヤモンドを作製することができる。このLi不純物ドープダイヤモンドは、イオン注入法の他に、固体のLiをプラズマ中に挿入することによりマイクロ波プラズマ化学気相堆積法を用いて作製することができる。流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスを全流量300ccmを原料として、ダイヤモンド単結晶(001)面方位上に、1.0μmの厚さの本発明のダイヤモンド半導体膜を成長させる。ここで反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。ここで、ドーパントガスには、メチルリチウム(CH3Li)、エチルリチウム(C2H5Li)、プロピルリチウム(C3H7Li)のいずれかを用いることができる。
マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、ダイヤモンド単結晶(001)面方位上に、1.0μmの厚さの本発明のダイヤモンド半導体膜を成長させる。反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。ここで、ドーパントガスには、Mgを含む有機金属原料である、ビスシクロペンタデエニールマグネシウム((C5H5)2Mg:Cp2Mg)、またはビスメチルシクロペンタデエニールマグネシウム((CH3C5H4)2Mg:MCp2Mg)を用いる。
x(ppm)×1017=y(cm‐3) ……… (1)
になる。
マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、ダイヤモンド単結晶(001)面方位上に、1.0μmの厚さの本発明のダイヤモンド半導体膜を成長させる。反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。ここで、ドーパントガスには、Znを含む有機金属原料である、ジメチル亜鉛((CH3)2Zn:DMZn)またはジエチル亜鉛((C2H5)2Zn:DEZn)を用いる。
x(ppm)×1017=y(cm‐3) ……… (1)
になる。
ダイヤモンド粉末に、ドーパントとして、Al、Be、Ca、Cd、Ga、In、Li、MgまたはZnを混入したものをFe−Ni溶媒に溶かし込む。5.0GPa、約1.4×103℃の条件下に7時間置くことで超高温高圧法により本発明のp型ダイヤモンド半導体膜を得ることができる。得られた本発明のp型ダイヤモンド半導体膜のホール測定を行って、ホール係数の判定を行うと、それらがP型半導体であることを確認することができる。
ドーパントをAl、Be、Ca、Cd、Ga、In、Li、MgまたはZnにし、イオン注入法により、加速電圧150kV、注入量1015cm‐2の条件でダイヤモンド単結晶にドーパントを注入して不純物ドープダイヤモンドを作製した。次に、得られたダイヤモンドにアニールを施した。得られた本発明の不純物ドープダイヤモンド半導体膜のホール測定を行って、ホール係数の判定を行うと、それらがp型半導体であることを確認することができる。
図33に、本発明の実施形態15に係るMESFET(金属−半導体 電界効果トランジスター)の断面構成図を示す。ダイヤモンド基板4−11上に、マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、1.0μmの厚さのp型ダイヤモンド半導体膜4−12を成長させる。本実施形態では、反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。このとき、ドーパントとしてAl、Ca、Cd、Ga、In、Li、MgまたはZnを用いる。
図34に、本発明の実施形態16に係るMISFET(金属−絶縁膜−半導体 電界効果トランジスタ)の断面構成図を示す。ダイヤモンド基板4−21上に、マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、1.0μmの厚さのダイヤモンド半導体膜4−22を成長させる。本実施形態では、反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。このとき、p型ダイヤモンド半導体膜4−22におけるドーパントとして、Al、Ca、Cd、Ga、In、Li、MgまたはZnを用いる。
図35に、本発明の実施形態17に係るnpn型バイポーラートランジスターの断面構成図を示す。ダイヤモンド基板4−31上に、マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、5.0μmの厚さのn型ダイヤモンド半導体膜4−32、0.5μmの厚さのp型ダイヤモンド半導体膜4−33およびn型ダイヤモンド半導体膜4−34とを順に成長させる。本実施形態では、反応管中圧力は50Torrであり、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。このとき、p型半導体膜4−33におけるドーパントとして、Al、Ca、Cd、Ga、In、Li、MgまたはZnを用いる。
図36に、本発明の実施形態18に係るpnp型バイポーラートランジスターの断面構成図を示す。ダイヤモンド基板4−41上に、マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、5.0μmの厚さのp型ダイヤモンド半導体膜4−42、0.5μmの厚さのn型ダイヤモンド半導体膜4−43、p型ダイヤモンド半導体膜4−44を順に成長させる。本実施形態では、反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。このとき、p型ダイヤモンド半導体膜4−42、4−44におけるドーパントとして、Al、Ca、Cd、Ga、In、Li、MgまたはZnを用いる。
図37に、本発明の実施形態19に係る発光ダイオード(LED)の断面構成図を示す。ダイヤモンド基板4−51上に、マイクロ波プラズマ化学気相堆積法にて、流量比1%のメタンガス(CH4)、ドーパントガス、残部H2なる反応ガスからなる全流量300ccmの混合ガスを原料として、5.0μmの厚さのp型ダイヤモンド半導体膜4−52、0.5μmの厚さのn型ダイヤモンド半導体膜4−53を順に成長させる。本実施形態では、反応管中圧力は50Torrとし、マイクロ波源は、周波数を2.45GHz、出力を1.3kWとする。このとき、p型半導体膜4−52におけるドーパントとして、Al、Ca、Cd、Ga、In、Li、MgまたはZnを用いる。
(実施形態20)
図40A−40Gに、本発明の実施形態20に係るダイヤモンド半導体の作製工程を示す。ダイヤモンド基板5−11を用意し(図40A)、そのダイヤモンド基板5−11上にマイクロ波プラズマCVD装置を用い、メタンを反応ガスとして基板温度700℃でダイヤモンド薄膜5−12を1μm積層する(図40B)。本実施形態ではマイクロ波プラズマCVD法を用いているが、ダイヤモンド薄膜5−12が形成できる手法であれば方法は問わない。また、高温高圧合成により作製したダイヤモンド単結晶を用いてもよい。
(実施形態21)
図41A−41Fに、本発明の実施形態21に係るダイヤモンド半導体の作製工程を示す。ダイヤモンド基板5−21を用意し(図41A)、そのダイヤモンド基板5−21上にマイクロ波プラズマCVD装置を用い、メタンを反応ガスとして基板温度700℃でダイヤモンド薄膜を1μm積層する(図41B)。
Claims (15)
- 基板上にダイヤモンド結晶薄膜を形成する第1の工程と、
前記形成されたダイヤモンド結晶薄膜を、ダイヤモンドが安定となる高圧力下で焼成する第2の工程と
を有することを特徴とするダイヤモンド薄膜の作製方法。 - 基板上にダイヤモンド結晶薄膜を形成する第1の工程と、
前記形成されたダイヤモンド結晶薄膜を2つ用意する第2の工程と、
前記2つのダイヤモンド結晶薄膜の各表面を、それぞれの表面の少なくとも一部を接触するように重ね合わせた2つのダイヤモンド結晶薄膜を、ダイヤモンドが安定となる高圧力下で焼成する第3の工程と
を有することを特徴とするダイヤモンド薄膜の作製方法。 - 基板上にダイヤモンド結晶薄膜を形成する第1の工程と、
前記形成されたダイヤモンド結晶薄膜の表面の少なくとも一部に、保護部材を形成するか、または、前記少なくとも一部を保護部材で覆って、前記保護部材により前記少なくとも一部を保護する第2の工程と、
前記保護部材により保護されたダイヤモンド結晶薄膜を、ダイヤモンドが安定となる高圧下で焼成する第3の工程と
を有することを特徴とするダイヤモンド薄膜の作製方法。 - 前記保護部材は、酸化シリコン、窒化シリコン、または酸化アルミニウムのいずれか1つであることを特徴とする請求項3記載のダイヤモンド薄膜の作製方法。
- 前記保護部材は、チタン、タングステン、白金、パラジウムまたはモリブデン、あるいはそれらのうち少なくとも1つを含む合金であることを特徴とする請求項3記載のダイヤモンド薄膜の作製方法。
- 前記基板は、ダイヤモンド単結晶基板であることを特徴とする請求項1乃至5のいずれかに記載のダイヤモンド薄膜の作製方法。
- 前記ダイヤモンド結晶薄膜は、ダイヤモンド単結晶薄膜であることを特徴とする請求項1乃至6のいずれかに記載のダイヤモンド薄膜の作製方法。
- 前記ダイヤモンド単結晶基板および前記ダイヤモンド単結晶薄膜の面方位が(111)であることを特徴とする請求項7記載のダイヤモンド薄膜の作製方法。
- 前記ダイヤモンド結晶薄膜は、ダイヤモンド多結晶薄膜であることを特徴とする請求項1乃至5のいずれかに記載のダイヤモンド薄膜の作製方法。
- 前記第1の工程では、前記ダイヤモンド結晶薄膜を形成する際の、前記基板を熱するための温度の制御、または前記ダイヤモンド結晶薄膜を形成する際に用いられるメタンおよび水素について、前記水素流量に対する前記メタン流量の比率の制御の少なくともいずれか一方を行うことを特徴とする請求項1乃至9のいずれかに記載のダイヤモンド薄膜の作製方法。
- 前記温度は、前記ダイヤモンド結晶薄膜を形成する際の成長温度以上、700℃以下で制御されることを特徴とする請求項10記載のダイヤモンド薄膜の作製方法。
- 前記比率は、0%よりも大きく、0.5%以下で制御されることを特徴とする請求項10または11記載のダイヤモンド薄膜の作製方法。
- 前記ダイヤモンド結晶薄膜の表面の平坦性が平均自乗粗さで1μm2の範囲で30nm以下であることを特徴とする請求項10乃至12のいずれかに記載のダイヤモンド薄膜の作製方法。
- 前記焼成を行う際の圧力P(GPa)と前記焼成を行う際の温度T(K)との関係が式P≧0.71+0.0027Tの関係を満たし、かつP≧1.5GPaの圧力下で前記焼成を行うことを特徴とする請求項1乃至13のいずれかに記載のダイヤモンド薄膜の作製方法。
- 前記第1の工程では、マイクロ波プラズマCVD法により、前記ダイヤモンド結晶薄膜を形成することを特徴とする請求項1乃至14のいずれかに記載のダイヤモンド薄膜の作製方法。
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