JP2011101002A - finFET、及びfinFETの形成方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 125000006850 spacer group Chemical group 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims abstract description 69
- 238000005530 etching Methods 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 238000002513 implantation Methods 0.000 claims description 15
- 239000007943 implant Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 239000000243 solution Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- -1 xenon ions Chemical class 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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Abstract
【解決手段】 フィン及びゲート・スタックの両方の上にスペーサ材料を共形に堆積させ、フィン上に堆積されたスペーサ材料のみに対して損傷を選択的にもたらすように、ゲート・スタックにほぼ平行に傾斜不純物注入を実行することによって、基板上に形成された半導体材料のフィンの一部を覆う、ゲート・スタックの長さに沿って実質的に均一のプロファイルをもつスペーサを有するfinFETが提供される。傾斜注入によって引き起こされる損傷のために、フィン上のスペーサ材料を、ゲート・スタック上のスペーサ材料に対して高い選択性を有するようにエッチングすることができる。
【選択図】 図6
Description
傾斜イオン/不純物注入及びそれから生じる側壁材料に対する選択的な損傷によって、かなりの程度のエッチングの選択性が生じるので、エッチング・プロセスのこれらの属性は、本発明を成功裏に実施するのに特に重要ではない。従って、イオン不純物注入に起因する損傷により与えられるエッチングの選択性のために、フィン上のスペーサが、ゲート・スタック上の側壁の表面まで実質的に除去される。このことにより、フィンに隣接し、フィンから離間配置されてもいるゲート・スタック上の側壁に、実質的に均一のプロファイル又は形状が与えられ、より明確に定められ、均一に配置された、フィンとゲート・スタック・スペーサの幾何学的接合部をもたらし、拡張注入部の形成などの望ましい他のプロセスによる正確で均一な結果を可能にする。従って、例えば、拡張注入を実行すること、エピタキシ・プロセスを実行してフィンの露出された端部を厚くし、ソース/ドレイン抵抗を低くすること、及び/又は、金属を堆積させ、アニールを行なってフィンの端部をシリサイド化し、ソース及びドレイン・コンタクトを形成することによって、或いは、フィンからのスペーサ材料のより確実で完全なに除去のために、より高い信頼性及び製造歩留まりを有した状態で実行することができる、望ましいと考えられる他のプロセスなどによって、図5の構造体が、finFETの完了のために準備される。
120:フィン
130、240:キャップ
210:ゲート・スタック
220:ゲート誘電体層
230:ゲート導体
310:スペーサ
Claims (25)
- finFETを形成する方法であって、
基板上に半導体材料の少なくとも1つのフィンを形成するステップと、
前記フィンにわたってゲート・スタックを形成するステップと、
前記フィン、ゲート・スタック及び基板上にスペーサ材料を共形に堆積させるステップと、
前記ゲート・スタックの側部に実質的に平行な方向に、前記フィンの両側上の前記スペーサ材料内に傾斜イオン不純物注入を実行するステップと、
前記スペーサ材料をエッチングして、前記ゲート・スタック上の前記スペーサ材料に対して選択的に前記フィンから前記スペーサ材料を除去し、前記ゲート・スタック上に側壁を形成するステップと、
を含む方法。 - 異方性エッチング・プロセスを実行して、前記スペーサ材料を共形に堆積させるステップにおいて堆積されたスペーサ材料をエッチングするステップをさらに含む、請求項1に記載の方法。
- 前記異方性エッチングは反応性イオン・エッチング・プロセスである、請求項2に記載の方法。
- 前記傾斜注入を実行するステップは、前記異方性エッチングを実行するステップの後に実行される、請求項2に記載の方法。
- 少なくとも2つのfinFETのフィンを併合する更なるステップを含む、請求項4に記載の方法。
- 前記傾斜注入を実行するステップは、前記等方性エッチングを実行するステップの前に実行される、請求項2に記載の方法。
- 少なくとも2つのFinFETのフィンを併合する更なるステップを含む、請求項6に記載の方法。
- 前記傾斜注入を実行するステップは、前記異方性エッチングを実行するステップの前、及び、前記スペーサ材料をエッチングして、前記ゲート・スタック上の前記スペーサ材料に対して選択的に前記フィンから前記スペーサ材料を除去するステップの前に実行される、請求項2に記載の方法。
- 少なくとも2つのfinFETのフィンを併合する更なるステップを含む、請求項8に記載の方法。
- 前記少なくとも1つのフィンを形成するステップは、前記少なくとも1つのフィン上にキャップを形成するステップを含む、請求項1に記載の方法。
- 基板上に半導体材料の少なくとも1つのフィンを形成するステップと、
前記フィンにわたってゲート・スタックを形成するステップと、
前記フィン、ゲート・スタック及び基板上にスペーサ材料を共形に堆積させるステップと、
前記ゲート・スタックの側部に実質的に平行な方向に、前記フィンの両側上の前記スペーサ材料内に傾斜イオン不純物注入を実行するステップと、
前記スペーサ材料をエッチングして、前記ゲート・スタック上の前記スペーサ材料に対して選択的に前記フィンから前記スペーサ材料を除去し、前記ゲート・スタック上に側壁を形成するステップと、
を含む方法によって形成されるfinFET。 - 前記方法は、異方性エッチング・プロセスを実行して、前記スペーサ材料を共形に堆積させるステップにおいて堆積されたスペーサ材料をエッチングするステップをさらに含む、請求項11に記載のfinFET。
- 前記異方性エッチングは反応性イオン・エッチング・プロセスである、請求項12に記載のfinFET。
- 前記傾斜注入を実行するステップは、前記異方性エッチングを実行するステップの後に実行される、請求項12に記載のfinFET。
- 前記方法は、少なくとも2つのfinFETのフィンを併合する更なるステップを含む、請求項14に記載のfinFET。
- 前記傾斜注入を実行するステップは、前記異方性エッチングを実行するステップの前に実行される、請求項12に記載のfinFET。
- 前記方法は、少なくとも2つのFinFETのフィンを併合する更なるステップを含む、請求項16に記載のfinFET。
- 前記傾斜注入を実行するステップは、前記異方性エッチングを実行するステップの前、及び、前記スペーサ材料をエッチングして、前記ゲート・スタック上の前記スペーサ材料に対して選択的に前記フィンから前記スペーサ材料を除去するステップの前に実行される、請求項12に記載のfinFET。
- 少なくとも2つのfinFETのフィンを併合する更なるステップを含む、請求項18に記載のfinFET。
- 前記少なくとも1つのフィンを形成するステップは、前記少なくとも1つのフィン上にキャップを形成するステップを含むことを特徴とする、請求項11に記載のfinFET。
- 基板上に配置された半導体材料のフィンと、
前記基板上に配置され、前記フィンの領域を覆うゲート・スタックと、
前記ゲート・スタックの側部上にあり、かつ、前記フィンに隣接し、前記フィンから間隔を置いて配置された、前記ゲート・スタックに沿って実質的に均一のプロファイルを有するスペーサと、
を含むことを特徴とするfinFET。 - 前記フィンはキャップを含む、請求項21に記載のfinFET。
- 一部が前記ゲート・スタックで覆われている付加的なフィンと、
前記フィンと前記付加的なフィンを併合する半導体材料と、
をさらに含む、請求項21に記載のfinFET。 - 前記スペーサの少なくとも1つによって定められる位置において前記フィン及び前記付加的なフィン内に注入される不純物をさらに含む、請求項23に記載のfinFET。
- 前記スペーサの少なくとも1つによって定められる位置において前記フィン内に注入される不純物をさらに含む、請求項21に記載のfinFET。
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US12/611,444 US8716797B2 (en) | 2009-11-03 | 2009-11-03 | FinFET spacer formation by oriented implantation |
US12/611444 | 2009-11-03 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011181931A (ja) * | 2010-03-01 | 2011-09-15 | Taiwan Semiconductor Manufacturing Co Ltd | フィン型fetを有する半導体装置およびその製造方法 |
JP2013115427A (ja) * | 2011-11-30 | 2013-06-10 | Internatl Business Mach Corp <Ibm> | FinFETを形成する方法およびFinFET構造 |
WO2013111461A1 (ja) * | 2012-01-26 | 2013-08-01 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP2014528643A (ja) * | 2011-09-30 | 2014-10-27 | インテル・コーポレーション | 非プレーナ型トランジスタ及びその製造方法 |
KR20140143841A (ko) * | 2012-04-11 | 2014-12-17 | 도쿄엘렉트론가부시키가이샤 | Finfet 방식용 게이트 스페이서 프로파일, 핀 손실 및 하드 마스크 손실 개선을 위한 종횡비 종속 성막 |
KR20150125333A (ko) * | 2014-04-30 | 2015-11-09 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
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US8716797B2 (en) * | 2009-11-03 | 2014-05-06 | International Business Machines Corporation | FinFET spacer formation by oriented implantation |
US8174055B2 (en) * | 2010-02-17 | 2012-05-08 | Globalfoundries Inc. | Formation of FinFET gate spacer |
CN102891179B (zh) * | 2011-07-20 | 2016-05-11 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US9082751B2 (en) * | 2011-09-14 | 2015-07-14 | Broadcom Corporation | Half-FinFET semiconductor device and related method |
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US9318578B2 (en) | 2016-04-19 |
US20110101455A1 (en) | 2011-05-05 |
KR20110049709A (ko) | 2011-05-12 |
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US9337315B2 (en) | 2016-05-10 |
US20140131801A1 (en) | 2014-05-15 |
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