JP2008277416A - 半導体装置 - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 20
- 206010053759 Growth retardation Diseases 0.000 claims description 54
- 239000013078 crystal Substances 0.000 claims description 37
- 239000012535 impurity Substances 0.000 claims description 22
- 239000010410 layer Substances 0.000 description 102
- 238000004519 manufacturing process Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- 229910021332 silicide Inorganic materials 0.000 description 19
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 19
- 239000002243 precursor Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
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- 239000002184 metal Substances 0.000 description 5
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- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
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- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910002441 CoNi Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
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- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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Abstract
【解決手段】本発明の実施の形態による半導体装置1は、半導体基板2と、半導体基板2上に所定の間隔を置いて互いに略平行に配置された複数のフィン3a、3b、3cと、複数のフィン3a、3b、3cの各々の両側面をゲート絶縁膜7を介して挟むように形成されたゲート電極4と、複数のフィン3a、3b、3cの少なくとも一部の側面上に形成される半導体層としてのエピタキシャル層9と、を有し、エピタキシャル層9は、複数のフィン3a、3b、3cのうちの両端に位置する2つのフィン3a、3cの外側側面上に位置する領域における厚さが、前記外側側面の反対側の側面上に位置する領域における厚さよりも小さい。
【選択図】図2B
Description
(半導体装置の構成)
図1は、本発明の第1の実施の形態に係る半導体装置の斜視図である。また、図2Aは、図1における断面II−IIを矢印の方向に見た断面図である。また、図2Bは、図2Aにおけるソース・ドレイン領域5およびそのエクステンション領域5aの図示を省略した断面図である。また、図3Aは、図1における断面III−IIIを矢印の方向に見た断面図である。また、図3Bは、図3Aにおけるソース・ドレイン領域5の図示を省略した断面図である。
図4〜12は、本発明の第1の実施の形態に係る半導体装置の製造方法を示す図である。
本発明の第1の実施の形態によれば、フィン3a、3b、3cの表面にエピタキシャル層9が形成されているために、フィン3a、3b、3cの全体のシリサイド化を防ぐことができる。さらに、フィン3a、3b、3cの厚さ方向に平行な側面、およびフィン3a、3cのそれぞれフィン3bと反対側の側面に成長抑制領域8を形成し、エピタキシャル層9の形成を抑えることにより、半導体装置1が隣接する他の素子と接触してショート等を起こすことを防止できる。
本発明の第2の実施の形態は、エピタキシャル層9を形成する工程で成長抑制領域8の代わりに成長抑制膜11を用いる点において第1の実施の形態と異なる。他の部材の構成等、第1の実施の形態と同様の点については説明を省略する。
図13〜16は、本発明の第2の実施の形態に係る半導体装置の製造方法を示す図である。
本発明の第2の実施の形態によれば、第1の実施の形態と同様に、フィン3a、3b、3cの表面にエピタキシャル層9が形成されているために、フィン3a、3b、3cの全体のシリサイド化を防ぐことができる。さらに、フィン3a、3b、3cの厚さ方向に平行な側面、およびフィン3a、3cのそれぞれフィン3bと反対側の側面に成長抑制膜11を形成し、エピタキシャル層9の形成を抑えることにより、半導体装置1が隣接する他の素子と接触してショート等を起こすことを防止できる。
本発明の第3の実施の形態は、エピタキシャル層9がフィン3a、3b、3cの間を完全に埋めない点において第1の実施の形態と異なる。他の部材の構成等、第1の実施の形態と同様の点については説明を省略する。
本発明の第3の実施の形態によれば、第1の実施の形態と同様に、フィン3a、3b、3cの表面にエピタキシャル層9が形成されているために、フィン3a、3b、3cの全体のシリサイド化を防ぐことができる。また、エピタキシャル層9の成長を第1の実施の形態よりも早い段階で止めるため、エピタキシャル層9が成長抑制領域8上に形成されることをより強く抑制することができる。そのため、半導体装置1が隣接する他の素子と接触してショート等を起こすことをより確実に防止できる。
本発明の第4の実施の形態は、エピタキシャル層9が成長抑制領域8の表面に形成される点において第1の実施の形態と異なる。他の部材の構成等、第1の実施の形態と同様の点については説明を省略する。
本発明の第4の実施の形態によれば、隣接する他の素子と接触しない範囲で成長抑制領域8上にエピタキシャル層9を形成することにより、フィン3a、3b、3cの全体のシリサイド化をより確実に防ぐことができる。
なお、本発明は上記各実施の形態に限定されず、発明の主旨を逸脱しない範囲内において種々変形実施が可能である。
2 半導体基板
3a、3b、3c フィン
4 ゲート電極
7 ゲート絶縁膜
8 成長抑制領域
9 エピタキシャル層
11 成長抑制膜
Claims (5)
- 半導体基板と、
前記半導体基板上に所定の間隔を置いて互いに略平行に配置された複数のフィンと、
複数の前記フィンの各々の両側面をゲート絶縁膜を介して挟むように形成されたゲート電極と、
複数の前記フィンの少なくとも一部の側面上に形成される半導体層と、
を有し、
前記半導体層は、複数の前記フィンのうちの両端に位置する2つの前記フィンの外側側面上に位置する領域における厚さが、前記外側側面の反対側の側面上に位置する領域における厚さよりも小さいことを特徴とする半導体装置。 - 前記半導体層はエピタキシャル結晶からなり、
前記フィンの前記外側側面にエピタキシャル結晶成長を抑制する成長抑制層が形成されたことを特徴とする請求項1に記載の半導体装置。 - 前記フィンはSi系結晶である第1の結晶からなり、
前記成長抑制層は、前記フィンの前記外側側面における表面内に形成された前記第1の結晶と異なる格子定数を有する不純物を含んだSi系結晶である第2の結晶からなることを特徴とする請求項2に記載の半導体装置。 - 前記成長抑制層は、前記フィンの前記外側側面における表面上に形成された絶縁膜であることを特徴とする請求項2に記載の半導体装置。
- 前記フィンの前記外側側面上には前記半導体層が形成されないことを特徴とする請求項1に記載の半導体装置。
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JP2007117055A JP4473889B2 (ja) | 2007-04-26 | 2007-04-26 | 半導体装置 |
US12/110,771 US7554165B2 (en) | 2007-04-26 | 2008-04-28 | Semiconductor device |
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JP2007117055A JP4473889B2 (ja) | 2007-04-26 | 2007-04-26 | 半導体装置 |
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JP4473889B2 JP4473889B2 (ja) | 2010-06-02 |
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JP2011066362A (ja) * | 2009-09-18 | 2011-03-31 | Toshiba Corp | 半導体装置 |
JP2011071235A (ja) * | 2009-09-24 | 2011-04-07 | Toshiba Corp | 半導体装置及びその製造方法 |
KR20110049709A (ko) * | 2009-11-03 | 2011-05-12 | 인터내셔널 비지네스 머신즈 코포레이션 | 배향된 주입에 의한 finFET 스페이서 형성 |
US8362574B2 (en) | 2010-06-04 | 2013-01-29 | Kabushiki Kaisha Toshiba | Faceted EPI shape and half-wrap around silicide in S/D merged FinFET |
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US9875938B2 (en) | 2016-06-20 | 2018-01-23 | Samsung Electronics Co., Ltd. | Integrated circuit device and method of fabricating the same |
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US20080277742A1 (en) | 2008-11-13 |
JP4473889B2 (ja) | 2010-06-02 |
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