JP2011054873A - 不揮発性メモリ素子の製造方法 - Google Patents

不揮発性メモリ素子の製造方法 Download PDF

Info

Publication number
JP2011054873A
JP2011054873A JP2009204528A JP2009204528A JP2011054873A JP 2011054873 A JP2011054873 A JP 2011054873A JP 2009204528 A JP2009204528 A JP 2009204528A JP 2009204528 A JP2009204528 A JP 2009204528A JP 2011054873 A JP2011054873 A JP 2011054873A
Authority
JP
Japan
Prior art keywords
layer
magnetic material
memory element
material layer
nonvolatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2009204528A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011054873A5 (enExample
Inventor
Hajime Yamagishi
肇 山岸
Mitsuharu Shoji
光治 庄子
Kiyotaka Tabuchi
清隆 田渕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2009204528A priority Critical patent/JP2011054873A/ja
Priority to CN2010102635449A priority patent/CN102013454B/zh
Priority to US12/869,904 priority patent/US8268713B2/en
Publication of JP2011054873A publication Critical patent/JP2011054873A/ja
Publication of JP2011054873A5 publication Critical patent/JP2011054873A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2009204528A 2009-09-04 2009-09-04 不揮発性メモリ素子の製造方法 Abandoned JP2011054873A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009204528A JP2011054873A (ja) 2009-09-04 2009-09-04 不揮発性メモリ素子の製造方法
CN2010102635449A CN102013454B (zh) 2009-09-04 2010-08-26 非易失性存储器件的制造方法
US12/869,904 US8268713B2 (en) 2009-09-04 2010-08-27 Method of manufacturing nonvolatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009204528A JP2011054873A (ja) 2009-09-04 2009-09-04 不揮発性メモリ素子の製造方法

Publications (2)

Publication Number Publication Date
JP2011054873A true JP2011054873A (ja) 2011-03-17
JP2011054873A5 JP2011054873A5 (enExample) 2012-08-30

Family

ID=43648096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009204528A Abandoned JP2011054873A (ja) 2009-09-04 2009-09-04 不揮発性メモリ素子の製造方法

Country Status (3)

Country Link
US (1) US8268713B2 (enExample)
JP (1) JP2011054873A (enExample)
CN (1) CN102013454B (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012244031A (ja) * 2011-05-23 2012-12-10 Sony Corp 記憶素子、記憶装置
JP2013069727A (ja) * 2011-09-20 2013-04-18 Toshiba Corp 磁気抵抗効果素子およびその製造方法
JP2013187409A (ja) * 2012-03-08 2013-09-19 Renesas Electronics Corp 磁気メモリセル、磁気メモリセルの製造方法
US8710605B2 (en) 2010-09-17 2014-04-29 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
JP2014512702A (ja) * 2011-04-25 2014-05-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 磁気ランダム・アクセス・メモリのための磁気トンネル接合およびその形成方法
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
KR20160015507A (ko) * 2014-07-30 2016-02-15 삼성전자주식회사 자기 메모리 장치 및 그의 형성방법
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
US9502644B1 (en) 2015-10-21 2016-11-22 Canon Anelva Corporation Method for manufacturing magnetoresistive device
WO2017169147A1 (ja) * 2016-03-31 2017-10-05 ソニー株式会社 不揮発性メモリ素子および不揮発性メモリ素子の製造方法
WO2017169540A1 (ja) * 2016-03-31 2017-10-05 ソニー株式会社 メモリ素子、及びメモリ素子の製造方法
JP2017535940A (ja) * 2014-09-23 2017-11-30 マイクロン テクノロジー， インク． 金属カルコゲナイドを含むデバイス

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP5742072B2 (ja) * 2010-10-06 2015-07-01 住友電気工業株式会社 半導体装置およびその製造方法
JP2012089643A (ja) * 2010-10-19 2012-05-10 Sony Corp 記憶装置の製造方法、並びに記憶素子および記憶装置
US9054295B2 (en) * 2011-08-23 2015-06-09 Micron Technology, Inc. Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials
KR20130034260A (ko) * 2011-09-28 2013-04-05 에스케이하이닉스 주식회사 반도체 장치의 제조방법
JP2013115413A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013115400A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013247198A (ja) * 2012-05-24 2013-12-09 Toshiba Corp 磁気抵抗素子及びその製造方法
JP2014090109A (ja) * 2012-10-31 2014-05-15 Hitachi High-Technologies Corp 磁気抵抗素子の製造方法
CN103337589B (zh) * 2013-06-27 2015-03-11 合肥工业大学 基于硫属亚铜化合物的准一维纳米阻变存储器与制备方法
CN106328196B (zh) * 2015-07-01 2019-03-05 华邦电子股份有限公司 电阻式存储器装置的写入方法
KR101671860B1 (ko) * 2015-07-20 2016-11-03 서울대학교산학협력단 터널링 절연막이 삽입된 저항성 메모리 소자 및 이를 이용한 메모리 어레이와 그 제조방법
US9941469B2 (en) 2015-10-06 2018-04-10 International Business Machines Corporation Double spin filter tunnel junction
US10062845B1 (en) * 2016-05-13 2018-08-28 Crossbar, Inc. Flatness of memory cell surfaces
US10522754B2 (en) 2016-06-15 2019-12-31 Crossbar, Inc. Liner layer for dielectric block layer
US10749110B1 (en) 2016-07-15 2020-08-18 Crossbar, Inc. Memory stack liner comprising dielectric block layer material
CN109983594B (zh) * 2016-12-27 2023-06-20 英特尔公司 具有多种类型的嵌入式非易失性存储器器件的单片集成电路
EP3343655B1 (en) * 2016-12-29 2022-03-02 IMEC vzw Magnetic tunnel junction device
KR102305342B1 (ko) * 2019-11-14 2021-09-24 울산과학기술원 2차원 강유전성 물질을 이용한 비휘발성 3진 메모리 소자 및 이의 제조 방법
CN111864058B (zh) * 2020-07-29 2023-04-18 浙江驰拓科技有限公司 存储位元的制备方法及mram的制备方法
JP2023042173A (ja) * 2021-09-14 2023-03-27 キオクシア株式会社 磁気メモリデバイス
KR102781519B1 (ko) * 2022-12-29 2025-03-17 인하대학교 산학협력단 코발트 박막의 건식 식각방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5761115A (en) 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
US6165803A (en) * 1999-05-17 2000-12-26 Motorola, Inc. Magnetic random access memory and fabricating method thereof
ID28920A (id) 1999-07-22 2001-07-12 Koninkl Philips Electronics Nv Metode pembuatan peranti sambungan saluran magnetik
US20020036876A1 (en) * 2000-09-06 2002-03-28 Yasuhiro Kawawake Magnetoresistive element, method for manufacturing the same, and magnetic device using the same
AU2002225761A1 (en) * 2000-11-30 2002-06-11 Asm America, Inc. Thin films for magnetic devices
JP2002334972A (ja) * 2001-05-10 2002-11-22 Sony Corp 磁気メモリ装置
US6693821B2 (en) 2001-06-28 2004-02-17 Sharp Laboratories Of America, Inc. Low cross-talk electrically programmable resistance cross point memory
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
JP2003078185A (ja) 2001-09-03 2003-03-14 Nec Corp 強磁性トンネル接合構造及びその製造方法並びに該強磁性トンネル接合を用いた磁気メモリ
JP2003243630A (ja) * 2002-02-18 2003-08-29 Sony Corp 磁気メモリ装置およびその製造方法
US6759263B2 (en) * 2002-08-29 2004-07-06 Chentsau Ying Method of patterning a layer of magnetic material
US7199055B2 (en) * 2003-03-03 2007-04-03 Cypress Semiconductor Corp. Magnetic memory cell junction and method for forming a magnetic memory cell junction
US7140374B2 (en) * 2003-03-14 2006-11-28 Lam Research Corporation System, method and apparatus for self-cleaning dry etch
JP4792714B2 (ja) 2003-11-28 2011-10-12 ソニー株式会社 記憶素子及び記憶装置
JP4608875B2 (ja) 2003-12-03 2011-01-12 ソニー株式会社 記憶装置
US7211446B2 (en) * 2004-06-11 2007-05-01 International Business Machines Corporation Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
KR100695164B1 (ko) 2005-11-09 2007-03-14 삼성전자주식회사 스위칭 소자로서 트랜지스터 및 다이오드를 포함하는하이브리드 타입의 비휘발성 메모리 소자
CN101449361A (zh) * 2006-03-16 2009-06-03 泰格尔公司 消除磁性随机存取存储器器件结构中的电短路的干法蚀刻停止工艺
RU2390883C1 (ru) * 2006-09-13 2010-05-27 Кэнон АНЕЛВА Корпорейшн Способ изготовления элемента с магниторезистивным эффектом и многокамерное устройство для изготовления элемента с магниторезистивным эффектом

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8710605B2 (en) 2010-09-17 2014-04-29 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
US9224944B2 (en) 2010-09-17 2015-12-29 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
JP2014512702A (ja) * 2011-04-25 2014-05-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 磁気ランダム・アクセス・メモリのための磁気トンネル接合およびその形成方法
US9356230B2 (en) 2011-05-23 2016-05-31 Sony Corporation Perpendicular magnetization storage element and storage device
JP2012244031A (ja) * 2011-05-23 2012-12-10 Sony Corp 記憶素子、記憶装置
JP2013069727A (ja) * 2011-09-20 2013-04-18 Toshiba Corp 磁気抵抗効果素子およびその製造方法
US8884389B2 (en) 2011-09-20 2014-11-11 Kabushiki Kaisha Toshiba Magnetoresistive element and method of manufacturing the same
JP2013187409A (ja) * 2012-03-08 2013-09-19 Renesas Electronics Corp 磁気メモリセル、磁気メモリセルの製造方法
US9337419B2 (en) 2012-03-08 2016-05-10 Renesas Electronics Corporation Magnetic memory cell and method of manufacturing the same
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9406871B2 (en) 2013-09-09 2016-08-02 Kabushiki Kaisha Toshiba Magnetoresistive element and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
KR20160015507A (ko) * 2014-07-30 2016-02-15 삼성전자주식회사 자기 메모리 장치 및 그의 형성방법
KR102259870B1 (ko) * 2014-07-30 2021-06-04 삼성전자주식회사 자기 메모리 장치 및 그의 형성방법
JP2017535940A (ja) * 2014-09-23 2017-11-30 マイクロン テクノロジー， インク． 金属カルコゲナイドを含むデバイス
US9502644B1 (en) 2015-10-21 2016-11-22 Canon Anelva Corporation Method for manufacturing magnetoresistive device
GB2548644A (en) * 2015-10-21 2017-09-27 Canon Anelva Corp Production method for magnetoresistive element
WO2017068611A1 (ja) * 2015-10-21 2017-04-27 キヤノンアネルバ株式会社 磁気抵抗素子の製造方法
GB2548644B (en) * 2015-10-21 2020-09-02 Canon Anelva Corp Method for manufacturing magnetoresistive device
JP6084335B1 (ja) * 2015-10-21 2017-02-22 キヤノンアネルバ株式会社 磁気抵抗素子の製造方法
WO2017169147A1 (ja) * 2016-03-31 2017-10-05 ソニー株式会社 不揮発性メモリ素子および不揮発性メモリ素子の製造方法
WO2017169540A1 (ja) * 2016-03-31 2017-10-05 ソニー株式会社 メモリ素子、及びメモリ素子の製造方法
DE112017001604T5 (de) 2016-03-31 2018-12-20 Sony Corporation Speicherelement und Herstellungsverfahren für ein Speicherelement
US10734386B2 (en) 2016-03-31 2020-08-04 Sony Corporation Memory element and manufacturing method of memory element
US10923531B2 (en) 2016-03-31 2021-02-16 Sony Corporation Nonvolatile memory device having an oxidized magnetic material film around a magnetic material layer and method of manufacturing the same

Also Published As

Publication number Publication date
US8268713B2 (en) 2012-09-18
CN102013454B (zh) 2013-10-09
CN102013454A (zh) 2011-04-13
US20110059557A1 (en) 2011-03-10

Similar Documents

Publication Publication Date Title
JP2011054873A (ja) 不揮発性メモリ素子の製造方法
JP4952725B2 (ja) 不揮発性磁気メモリ装置
JP3583102B2 (ja) 磁気スイッチング素子及び磁気メモリ
JP4693450B2 (ja) 磁気抵抗効果素子および磁気メモリ
KR101497356B1 (ko) 비휘발성 자기 메모리 소자
US10706903B2 (en) Nonvolatile memory cell, memory cell unit, and information writing method, and electronic apparatus
CN101071628B (zh) 存储元件和存储器
JP2012084765A (ja) 不揮発性メモリ素子及びその製造方法
US20070019463A1 (en) Magnetoresistive effect element and magnetic memory
US20080089118A1 (en) Magnetic random access memory and method of manufacturing the same
JP2018032805A (ja) 磁気抵抗素子及び電子デバイス
WO2017169147A1 (ja) 不揮発性メモリ素子および不揮発性メモリ素子の製造方法
CN114127943A (zh) 非易失性存储器单元、非易失性存储器单元阵列和非易失性存储器单元阵列的信息写入方法
US6958503B2 (en) Nonvolatile magnetic memory device
JP2016004589A (ja) 抵抗変化型メモリ装置及び半導体装置
JP2010016148A (ja) 磁気抵抗効果素子及びその製造方法
JP5277629B2 (ja) 磁気抵抗効果を有するメモリ素子及びその製造方法、並びに、不揮発性磁気メモリ装置
JP2009290050A (ja) 磁気抵抗効果素子及びその製造方法
JP2008282940A (ja) 磁気記憶装置の製造方法
JP5087067B2 (ja) 磁気抵抗効果素子および磁気メモリ
JP5327293B2 (ja) 不揮発性磁気メモリ装置
JP2006059869A (ja) トグルモード書込型不揮発性磁気メモリ装置
KR102665796B1 (ko) 가변 저항 메모리 소자 및 그 제조 방법
JP2004158578A (ja) 磁気記憶装置及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120717

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120717

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20130415