JP2011054873A5 - - Google Patents

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Publication number
JP2011054873A5
JP2011054873A5 JP2009204528A JP2009204528A JP2011054873A5 JP 2011054873 A5 JP2011054873 A5 JP 2011054873A5 JP 2009204528 A JP2009204528 A JP 2009204528A JP 2009204528 A JP2009204528 A JP 2009204528A JP 2011054873 A5 JP2011054873 A5 JP 2011054873A5
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JP
Japan
Prior art keywords
memory element
volatile memory
nonvolatile memory
magnetic material
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2009204528A
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English (en)
Japanese (ja)
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JP2011054873A (ja
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Publication date
Application filed filed Critical
Priority to JP2009204528A priority Critical patent/JP2011054873A/ja
Priority claimed from JP2009204528A external-priority patent/JP2011054873A/ja
Priority to CN2010102635449A priority patent/CN102013454B/zh
Priority to US12/869,904 priority patent/US8268713B2/en
Publication of JP2011054873A publication Critical patent/JP2011054873A/ja
Publication of JP2011054873A5 publication Critical patent/JP2011054873A5/ja
Abandoned legal-status Critical Current

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JP2009204528A 2009-09-04 2009-09-04 不揮発性メモリ素子の製造方法 Abandoned JP2011054873A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009204528A JP2011054873A (ja) 2009-09-04 2009-09-04 不揮発性メモリ素子の製造方法
CN2010102635449A CN102013454B (zh) 2009-09-04 2010-08-26 非易失性存储器件的制造方法
US12/869,904 US8268713B2 (en) 2009-09-04 2010-08-27 Method of manufacturing nonvolatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009204528A JP2011054873A (ja) 2009-09-04 2009-09-04 不揮発性メモリ素子の製造方法

Publications (2)

Publication Number Publication Date
JP2011054873A JP2011054873A (ja) 2011-03-17
JP2011054873A5 true JP2011054873A5 (enExample) 2012-08-30

Family

ID=43648096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009204528A Abandoned JP2011054873A (ja) 2009-09-04 2009-09-04 不揮発性メモリ素子の製造方法

Country Status (3)

Country Link
US (1) US8268713B2 (enExample)
JP (1) JP2011054873A (enExample)
CN (1) CN102013454B (enExample)

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JP2013115400A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
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KR101671860B1 (ko) * 2015-07-20 2016-11-03 서울대학교산학협력단 터널링 절연막이 삽입된 저항성 메모리 소자 및 이를 이용한 메모리 어레이와 그 제조방법
US9941469B2 (en) 2015-10-06 2018-04-10 International Business Machines Corporation Double spin filter tunnel junction
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JP2017183602A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 不揮発性メモリ素子および不揮発性メモリ素子の製造方法
JP2017183560A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 メモリ素子、及びメモリ素子の製造方法
US10062845B1 (en) * 2016-05-13 2018-08-28 Crossbar, Inc. Flatness of memory cell surfaces
US10522754B2 (en) 2016-06-15 2019-12-31 Crossbar, Inc. Liner layer for dielectric block layer
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CN109983594B (zh) * 2016-12-27 2023-06-20 英特尔公司 具有多种类型的嵌入式非易失性存储器器件的单片集成电路
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KR102305342B1 (ko) * 2019-11-14 2021-09-24 울산과학기술원 2차원 강유전성 물질을 이용한 비휘발성 3진 메모리 소자 및 이의 제조 방법
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JP2023042173A (ja) * 2021-09-14 2023-03-27 キオクシア株式会社 磁気メモリデバイス
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