JP2012533194A5 - - Google Patents
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- Publication number
- JP2012533194A5 JP2012533194A5 JP2012520686A JP2012520686A JP2012533194A5 JP 2012533194 A5 JP2012533194 A5 JP 2012533194A5 JP 2012520686 A JP2012520686 A JP 2012520686A JP 2012520686 A JP2012520686 A JP 2012520686A JP 2012533194 A5 JP2012533194 A5 JP 2012533194A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- tunnel
- memory cell
- metal
- resistance film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims 12
- 238000000034 method Methods 0.000 claims 8
- 239000000463 material Substances 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 4
- 229910021645 metal ion Inorganic materials 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- -1 oxygen ions Chemical class 0.000 claims 4
- 239000007784 solid electrolyte Substances 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 238000001465 metallisation Methods 0.000 claims 2
- 238000013500 data storage Methods 0.000 claims 1
- 230000004044 response Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/501,689 US8421048B2 (en) | 2009-07-13 | 2009-07-13 | Non-volatile memory with active ionic interface region |
| US12/501,689 | 2009-07-13 | ||
| PCT/US2010/041554 WO2011008653A1 (en) | 2009-07-13 | 2010-07-09 | Non-volatile memory with active ionic interface region |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012533194A JP2012533194A (ja) | 2012-12-20 |
| JP2012533194A5 true JP2012533194A5 (enExample) | 2013-04-18 |
| JP5730869B2 JP5730869B2 (ja) | 2015-06-10 |
Family
ID=42767958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012520686A Expired - Fee Related JP5730869B2 (ja) | 2009-07-13 | 2010-07-09 | 活性イオン界面領域を備えた不揮発性メモリ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8421048B2 (enExample) |
| JP (1) | JP5730869B2 (enExample) |
| KR (1) | KR101323779B1 (enExample) |
| CN (1) | CN102473455B (enExample) |
| WO (1) | WO2011008653A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008024078A1 (de) * | 2008-05-17 | 2009-12-17 | Forschungszentrum Jülich GmbH | Speicher sowie Verfahren zum Schreiben und Auslesen von Information in einem Speicher |
| US9142767B2 (en) | 2011-09-16 | 2015-09-22 | Micron Technology, Inc. | Resistive memory cell including integrated select device and storage element |
| US9349445B2 (en) | 2011-09-16 | 2016-05-24 | Micron Technology, Inc. | Select devices for memory cell applications |
| US8780607B2 (en) | 2011-09-16 | 2014-07-15 | Micron Technology, Inc. | Select devices for memory cell applications |
| US9112138B2 (en) | 2012-06-14 | 2015-08-18 | Micron Technology, Inc. | Methods of forming resistive memory elements |
| US9178143B2 (en) * | 2013-07-29 | 2015-11-03 | Industrial Technology Research Institute | Resistive memory structure |
| US10665781B2 (en) | 2016-03-31 | 2020-05-26 | Intel Corporation | Programmable metallization cell with alloy layer |
| WO2017171823A1 (en) | 2016-03-31 | 2017-10-05 | Intel Corporation | Multilayer selector device with low holding voltage |
| KR20220099061A (ko) | 2021-01-05 | 2022-07-12 | 에스케이하이닉스 주식회사 | 반도체 장치 및 반도체 장치의 동작 방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6204139B1 (en) * | 1998-08-25 | 2001-03-20 | University Of Houston | Method for switching the properties of perovskite materials used in thin film resistors |
| US20060171200A1 (en) * | 2004-02-06 | 2006-08-03 | Unity Semiconductor Corporation | Memory using mixed valence conductive oxides |
| US7538338B2 (en) * | 2004-09-03 | 2009-05-26 | Unity Semiconductor Corporation | Memory using variable tunnel barrier widths |
| US8558211B2 (en) * | 2006-03-30 | 2013-10-15 | Nec Corporation | Switching element and method for manufacturing switching element |
| US8766224B2 (en) * | 2006-10-03 | 2014-07-01 | Hewlett-Packard Development Company, L.P. | Electrically actuated switch |
| JP5092355B2 (ja) * | 2006-10-31 | 2012-12-05 | ソニー株式会社 | 記憶装置 |
| US7619917B2 (en) * | 2006-11-28 | 2009-11-17 | Qimonda North America Corp. | Memory cell with trigger element |
| DE102008024078A1 (de) * | 2008-05-17 | 2009-12-17 | Forschungszentrum Jülich GmbH | Speicher sowie Verfahren zum Schreiben und Auslesen von Information in einem Speicher |
-
2009
- 2009-07-13 US US12/501,689 patent/US8421048B2/en not_active Expired - Fee Related
-
2010
- 2010-07-09 CN CN201080032408.7A patent/CN102473455B/zh not_active Expired - Fee Related
- 2010-07-09 KR KR1020127003814A patent/KR101323779B1/ko not_active Expired - Fee Related
- 2010-07-09 JP JP2012520686A patent/JP5730869B2/ja not_active Expired - Fee Related
- 2010-07-09 WO PCT/US2010/041554 patent/WO2011008653A1/en not_active Ceased
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