CN102473455B - 具有活性离子界面区的非易失性存储器 - Google Patents

具有活性离子界面区的非易失性存储器 Download PDF

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Publication number
CN102473455B
CN102473455B CN201080032408.7A CN201080032408A CN102473455B CN 102473455 B CN102473455 B CN 102473455B CN 201080032408 A CN201080032408 A CN 201080032408A CN 102473455 B CN102473455 B CN 102473455B
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CN
China
Prior art keywords
tunneling barrier
region
tunneling
memory cell
high resistance
Prior art date
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Expired - Fee Related
Application number
CN201080032408.7A
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English (en)
Chinese (zh)
Other versions
CN102473455A (zh
Inventor
V·文努戈帕兰
S·马克斯
T·伟
B·穆拉里克利什南
J·印斯克
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Seagate Technology LLC
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Seagate Technology LLC
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Publication date
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Publication of CN102473455A publication Critical patent/CN102473455A/zh
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Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/34—Material includes an oxide or a nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/54—Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
CN201080032408.7A 2009-07-13 2010-07-09 具有活性离子界面区的非易失性存储器 Expired - Fee Related CN102473455B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/501,689 2009-07-13
US12/501,689 US8421048B2 (en) 2009-07-13 2009-07-13 Non-volatile memory with active ionic interface region
PCT/US2010/041554 WO2011008653A1 (en) 2009-07-13 2010-07-09 Non-volatile memory with active ionic interface region

Publications (2)

Publication Number Publication Date
CN102473455A CN102473455A (zh) 2012-05-23
CN102473455B true CN102473455B (zh) 2015-10-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080032408.7A Expired - Fee Related CN102473455B (zh) 2009-07-13 2010-07-09 具有活性离子界面区的非易失性存储器

Country Status (5)

Country Link
US (1) US8421048B2 (enExample)
JP (1) JP5730869B2 (enExample)
KR (1) KR101323779B1 (enExample)
CN (1) CN102473455B (enExample)
WO (1) WO2011008653A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008024078A1 (de) * 2008-05-17 2009-12-17 Forschungszentrum Jülich GmbH Speicher sowie Verfahren zum Schreiben und Auslesen von Information in einem Speicher
US9142767B2 (en) 2011-09-16 2015-09-22 Micron Technology, Inc. Resistive memory cell including integrated select device and storage element
US8780607B2 (en) 2011-09-16 2014-07-15 Micron Technology, Inc. Select devices for memory cell applications
US9349445B2 (en) 2011-09-16 2016-05-24 Micron Technology, Inc. Select devices for memory cell applications
US9112138B2 (en) 2012-06-14 2015-08-18 Micron Technology, Inc. Methods of forming resistive memory elements
US9178143B2 (en) * 2013-07-29 2015-11-03 Industrial Technology Research Institute Resistive memory structure
US10840431B2 (en) 2016-03-31 2020-11-17 Intel Corporation Multilayer selector device with low holding voltage
WO2017171821A1 (en) * 2016-03-31 2017-10-05 Intel Corporation Programmable metallization cell with alloy layer
KR20220099061A (ko) 2021-01-05 2022-07-12 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 동작 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060050598A1 (en) * 2004-09-03 2006-03-09 Darrell Rinerson Memory using variable tunnel barrier widths
WO2006029228A2 (en) * 2004-09-03 2006-03-16 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
CN101256834A (zh) * 2006-11-28 2008-09-03 奇梦达北美公司 具有触发元件的存储单元

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204139B1 (en) * 1998-08-25 2001-03-20 University Of Houston Method for switching the properties of perovskite materials used in thin film resistors
CN101454920B (zh) * 2006-03-30 2010-12-22 日本电气株式会社 开关元件及开关元件的制造方法
US8766224B2 (en) * 2006-10-03 2014-07-01 Hewlett-Packard Development Company, L.P. Electrically actuated switch
JP5092355B2 (ja) * 2006-10-31 2012-12-05 ソニー株式会社 記憶装置
DE102008024078A1 (de) * 2008-05-17 2009-12-17 Forschungszentrum Jülich GmbH Speicher sowie Verfahren zum Schreiben und Auslesen von Information in einem Speicher

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060050598A1 (en) * 2004-09-03 2006-03-09 Darrell Rinerson Memory using variable tunnel barrier widths
WO2006029228A2 (en) * 2004-09-03 2006-03-16 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
CN101256834A (zh) * 2006-11-28 2008-09-03 奇梦达北美公司 具有触发元件的存储单元

Also Published As

Publication number Publication date
KR20120037482A (ko) 2012-04-19
CN102473455A (zh) 2012-05-23
US8421048B2 (en) 2013-04-16
JP2012533194A (ja) 2012-12-20
WO2011008653A1 (en) 2011-01-20
KR101323779B1 (ko) 2013-10-31
US20110007544A1 (en) 2011-01-13
JP5730869B2 (ja) 2015-06-10

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