JP5730869B2 - 活性イオン界面領域を備えた不揮発性メモリ - Google Patents
活性イオン界面領域を備えた不揮発性メモリ Download PDFInfo
- Publication number
- JP5730869B2 JP5730869B2 JP2012520686A JP2012520686A JP5730869B2 JP 5730869 B2 JP5730869 B2 JP 5730869B2 JP 2012520686 A JP2012520686 A JP 2012520686A JP 2012520686 A JP2012520686 A JP 2012520686A JP 5730869 B2 JP5730869 B2 JP 5730869B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- tunnel
- memory cell
- tunnel barrier
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004888 barrier function Effects 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 150000002500 ions Chemical class 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- -1 oxygen ions Chemical class 0.000 claims description 14
- 229910021645 metal ion Inorganic materials 0.000 claims description 12
- 238000013500 data storage Methods 0.000 claims description 9
- 239000007784 solid electrolyte Substances 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 239000011575 calcium Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/34—Material includes an oxide or a nitride
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/54—Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/501,689 US8421048B2 (en) | 2009-07-13 | 2009-07-13 | Non-volatile memory with active ionic interface region |
| US12/501,689 | 2009-07-13 | ||
| PCT/US2010/041554 WO2011008653A1 (en) | 2009-07-13 | 2010-07-09 | Non-volatile memory with active ionic interface region |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012533194A JP2012533194A (ja) | 2012-12-20 |
| JP2012533194A5 JP2012533194A5 (enExample) | 2013-04-18 |
| JP5730869B2 true JP5730869B2 (ja) | 2015-06-10 |
Family
ID=42767958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012520686A Expired - Fee Related JP5730869B2 (ja) | 2009-07-13 | 2010-07-09 | 活性イオン界面領域を備えた不揮発性メモリ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8421048B2 (enExample) |
| JP (1) | JP5730869B2 (enExample) |
| KR (1) | KR101323779B1 (enExample) |
| CN (1) | CN102473455B (enExample) |
| WO (1) | WO2011008653A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008024078A1 (de) * | 2008-05-17 | 2009-12-17 | Forschungszentrum Jülich GmbH | Speicher sowie Verfahren zum Schreiben und Auslesen von Information in einem Speicher |
| US9142767B2 (en) | 2011-09-16 | 2015-09-22 | Micron Technology, Inc. | Resistive memory cell including integrated select device and storage element |
| US9349445B2 (en) | 2011-09-16 | 2016-05-24 | Micron Technology, Inc. | Select devices for memory cell applications |
| US8780607B2 (en) | 2011-09-16 | 2014-07-15 | Micron Technology, Inc. | Select devices for memory cell applications |
| US9112138B2 (en) | 2012-06-14 | 2015-08-18 | Micron Technology, Inc. | Methods of forming resistive memory elements |
| US9178143B2 (en) * | 2013-07-29 | 2015-11-03 | Industrial Technology Research Institute | Resistive memory structure |
| US10665781B2 (en) | 2016-03-31 | 2020-05-26 | Intel Corporation | Programmable metallization cell with alloy layer |
| WO2017171823A1 (en) | 2016-03-31 | 2017-10-05 | Intel Corporation | Multilayer selector device with low holding voltage |
| KR20220099061A (ko) | 2021-01-05 | 2022-07-12 | 에스케이하이닉스 주식회사 | 반도체 장치 및 반도체 장치의 동작 방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6204139B1 (en) * | 1998-08-25 | 2001-03-20 | University Of Houston | Method for switching the properties of perovskite materials used in thin film resistors |
| US20060171200A1 (en) * | 2004-02-06 | 2006-08-03 | Unity Semiconductor Corporation | Memory using mixed valence conductive oxides |
| US7538338B2 (en) * | 2004-09-03 | 2009-05-26 | Unity Semiconductor Corporation | Memory using variable tunnel barrier widths |
| US8558211B2 (en) * | 2006-03-30 | 2013-10-15 | Nec Corporation | Switching element and method for manufacturing switching element |
| US8766224B2 (en) * | 2006-10-03 | 2014-07-01 | Hewlett-Packard Development Company, L.P. | Electrically actuated switch |
| JP5092355B2 (ja) * | 2006-10-31 | 2012-12-05 | ソニー株式会社 | 記憶装置 |
| US7619917B2 (en) * | 2006-11-28 | 2009-11-17 | Qimonda North America Corp. | Memory cell with trigger element |
| DE102008024078A1 (de) * | 2008-05-17 | 2009-12-17 | Forschungszentrum Jülich GmbH | Speicher sowie Verfahren zum Schreiben und Auslesen von Information in einem Speicher |
-
2009
- 2009-07-13 US US12/501,689 patent/US8421048B2/en not_active Expired - Fee Related
-
2010
- 2010-07-09 CN CN201080032408.7A patent/CN102473455B/zh not_active Expired - Fee Related
- 2010-07-09 KR KR1020127003814A patent/KR101323779B1/ko not_active Expired - Fee Related
- 2010-07-09 JP JP2012520686A patent/JP5730869B2/ja not_active Expired - Fee Related
- 2010-07-09 WO PCT/US2010/041554 patent/WO2011008653A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| KR101323779B1 (ko) | 2013-10-31 |
| JP2012533194A (ja) | 2012-12-20 |
| WO2011008653A1 (en) | 2011-01-20 |
| KR20120037482A (ko) | 2012-04-19 |
| US8421048B2 (en) | 2013-04-16 |
| US20110007544A1 (en) | 2011-01-13 |
| CN102473455B (zh) | 2015-10-14 |
| CN102473455A (zh) | 2012-05-23 |
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