JP2016033842A5 - - Google Patents

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Publication number
JP2016033842A5
JP2016033842A5 JP2014157136A JP2014157136A JP2016033842A5 JP 2016033842 A5 JP2016033842 A5 JP 2016033842A5 JP 2014157136 A JP2014157136 A JP 2014157136A JP 2014157136 A JP2014157136 A JP 2014157136A JP 2016033842 A5 JP2016033842 A5 JP 2016033842A5
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JP
Japan
Prior art keywords
storage node
memory
nonvolatile
sram
switch transistor
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Application number
JP2014157136A
Other languages
English (en)
Japanese (ja)
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JP6306466B2 (ja
JP2016033842A (ja
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Priority to JP2014157136A priority Critical patent/JP6306466B2/ja
Priority claimed from JP2014157136A external-priority patent/JP6306466B2/ja
Priority to PCT/JP2015/070806 priority patent/WO2016017496A1/ja
Priority to US15/329,312 priority patent/US9842650B2/en
Priority to TW104124289A priority patent/TWI651810B/zh
Publication of JP2016033842A publication Critical patent/JP2016033842A/ja
Publication of JP2016033842A5 publication Critical patent/JP2016033842A5/ja
Application granted granted Critical
Publication of JP6306466B2 publication Critical patent/JP6306466B2/ja
Active legal-status Critical Current
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JP2014157136A 2014-07-31 2014-07-31 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置 Active JP6306466B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014157136A JP6306466B2 (ja) 2014-07-31 2014-07-31 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置
PCT/JP2015/070806 WO2016017496A1 (ja) 2014-07-31 2015-07-22 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置
US15/329,312 US9842650B2 (en) 2014-07-31 2015-07-22 Non-volatile SRAM memory cell, and non-volatile semiconductor storage device
TW104124289A TWI651810B (zh) 2014-07-31 2015-07-27 非揮發性靜態隨機存取記憶體記憶胞、及非揮發性半導體記憶裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014157136A JP6306466B2 (ja) 2014-07-31 2014-07-31 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2016033842A JP2016033842A (ja) 2016-03-10
JP2016033842A5 true JP2016033842A5 (enExample) 2017-08-17
JP6306466B2 JP6306466B2 (ja) 2018-04-04

Family

ID=55217397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014157136A Active JP6306466B2 (ja) 2014-07-31 2014-07-31 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置

Country Status (4)

Country Link
US (1) US9842650B2 (enExample)
JP (1) JP6306466B2 (enExample)
TW (1) TWI651810B (enExample)
WO (1) WO2016017496A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2017158465A1 (ja) 2016-03-18 2019-02-14 株式会社半導体エネルギー研究所 記憶装置
KR102506838B1 (ko) * 2016-09-30 2023-03-08 에스케이하이닉스 주식회사 반도체 장치 및 그의 동작 방법
CN108695328B (zh) * 2017-04-05 2021-08-17 联华电子股份有限公司 静态随机存取存储器元件及形成方法
US10249360B1 (en) * 2017-11-30 2019-04-02 National Tsing Hua University Method and circuit for generating a reference voltage in neuromorphic system
JP6734904B2 (ja) * 2018-11-01 2020-08-05 ウィンボンド エレクトロニクス コーポレーション 記憶回路
US11031078B2 (en) * 2019-03-08 2021-06-08 Microsemi Soc Corp. SEU stabilized memory cells
US11545218B2 (en) * 2019-12-31 2023-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Nonvolatile SRAM

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298998A (ja) 1986-06-18 1987-12-26 Seiko Instr & Electronics Ltd 不揮発性ｒａｍ
WO2004086512A1 (ja) * 2003-03-26 2004-10-07 Fujitsu Limited 半導体記憶装置
DE102005001667B4 (de) * 2005-01-13 2011-04-21 Qimonda Ag Nichtflüchtige Speicherzelle zum Speichern eines Datums in einer integrierten Schaltung
CN103597545B (zh) * 2011-06-09 2016-10-19 株式会社半导体能源研究所 高速缓冲存储器及其驱动方法
JP5267623B2 (ja) * 2011-07-27 2013-08-21 凸版印刷株式会社 不揮発性メモリセルおよび不揮発性メモリ
JP2013190893A (ja) 2012-03-13 2013-09-26 Rohm Co Ltd マルチタスク処理装置
US8964470B2 (en) * 2012-09-25 2015-02-24 Aplus Flash Technology, Inc. Method and architecture for improving defect detectability, coupling area, and flexibility of NVSRAM cells and arrays
JP5556873B2 (ja) * 2012-10-19 2014-07-23 株式会社フローディア 不揮発性半導体記憶装置
JP6053474B2 (ja) 2012-11-27 2016-12-27 株式会社フローディア 不揮発性半導体記憶装置
JP6368526B2 (ja) * 2014-04-18 2018-08-01 株式会社フローディア 不揮発性半導体記憶装置

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