JP2009545834A5 - - Google Patents

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Publication number
JP2009545834A5
JP2009545834A5 JP2009522905A JP2009522905A JP2009545834A5 JP 2009545834 A5 JP2009545834 A5 JP 2009545834A5 JP 2009522905 A JP2009522905 A JP 2009522905A JP 2009522905 A JP2009522905 A JP 2009522905A JP 2009545834 A5 JP2009545834 A5 JP 2009545834A5
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JP
Japan
Prior art keywords
line
memory cells
power supply
memory
capacitance structure
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Application number
JP2009522905A
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English (en)
Japanese (ja)
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JP2009545834A (ja
JP5179496B2 (ja
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Publication date
Priority claimed from US11/461,200 external-priority patent/US7292485B1/en
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Publication of JP2009545834A publication Critical patent/JP2009545834A/ja
Publication of JP2009545834A5 publication Critical patent/JP2009545834A5/ja
Application granted granted Critical
Publication of JP5179496B2 publication Critical patent/JP5179496B2/ja
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JP2009522905A 2006-07-31 2007-05-10 メモリ回路及びメモリの書き込み方法 Active JP5179496B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/461,200 US7292485B1 (en) 2006-07-31 2006-07-31 SRAM having variable power supply and method therefor
US11/461,200 2006-07-31
PCT/US2007/068677 WO2008016737A2 (en) 2006-07-31 2007-05-10 Sram having variable power supply and method therefor

Publications (3)

Publication Number Publication Date
JP2009545834A JP2009545834A (ja) 2009-12-24
JP2009545834A5 true JP2009545834A5 (enExample) 2010-07-01
JP5179496B2 JP5179496B2 (ja) 2013-04-10

Family

ID=38653438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009522905A Active JP5179496B2 (ja) 2006-07-31 2007-05-10 メモリ回路及びメモリの書き込み方法

Country Status (5)

Country Link
US (1) US7292485B1 (enExample)
JP (1) JP5179496B2 (enExample)
CN (1) CN101496107B (enExample)
TW (1) TW200807417A (enExample)
WO (1) WO2008016737A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8264896B2 (en) * 2008-07-31 2012-09-11 Freescale Semiconductor, Inc. Integrated circuit having an array supply voltage control circuit
KR20100028416A (ko) * 2008-09-04 2010-03-12 삼성전자주식회사 반도체 메모리 장치 및 상기 반도체 메모리 장치의 동작 방법
KR101446337B1 (ko) * 2008-09-08 2014-10-02 삼성전자주식회사 반도체 메모리 장치 및 상기 반도체 메모리 장치의 동작 방법
KR101505554B1 (ko) * 2008-09-08 2015-03-25 삼성전자주식회사 반도체 메모리 장치 및 상기 반도체 메모리 장치의 동작 방법
US8045402B2 (en) * 2009-06-29 2011-10-25 Arm Limited Assisting write operations to data storage cells
US20120120702A1 (en) * 2010-11-13 2012-05-17 Browning Christopher D Power saving technique in a content addressable memory during compare operations
US9017528B2 (en) 2011-04-14 2015-04-28 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9005409B2 (en) 2011-04-14 2015-04-14 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9303329B2 (en) 2013-11-11 2016-04-05 Tel Nexx, Inc. Electrochemical deposition apparatus with remote catholyte fluid management
WO2015171684A1 (en) * 2014-05-07 2015-11-12 Fong John Yit 4 bit nonvolatile flash or variable resistance memory
KR102714216B1 (ko) * 2016-12-06 2024-10-10 삼성전자주식회사 균일한 쓰기 특성을 갖는 에스램 장치
US10867646B2 (en) * 2018-03-28 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Bit line logic circuits and methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094008A (en) * 1976-06-18 1978-06-06 Ncr Corporation Alterable capacitor memory array
GB2259589A (en) * 1991-09-12 1993-03-17 Motorola Inc Self - timed random access memories
JP4198201B2 (ja) * 1995-06-02 2008-12-17 株式会社ルネサステクノロジ 半導体装置
JP4162076B2 (ja) 2002-05-30 2008-10-08 株式会社ルネサステクノロジ 半導体記憶装置
JP3906166B2 (ja) * 2003-02-25 2007-04-18 株式会社東芝 半導体記憶装置
US7333357B2 (en) 2003-12-11 2008-02-19 Texas Instruments Incorproated Static random access memory device having reduced leakage current during active mode and a method of operating thereof
JP4053510B2 (ja) 2004-03-23 2008-02-27 日本テキサス・インスツルメンツ株式会社 Ｓｒａｍ装置
JP2006127460A (ja) * 2004-06-09 2006-05-18 Renesas Technology Corp 半導体装置、半導体信号処理装置、およびクロスバースイッチ
JP4477456B2 (ja) * 2004-09-06 2010-06-09 富士通マイクロエレクトロニクス株式会社 半導体メモリ
CN100483547C (zh) * 2004-09-27 2009-04-29 国际商业机器公司 具有改进的单元稳定性的静态随机存取存储器阵列及方法
JP4912016B2 (ja) * 2005-05-23 2012-04-04 ルネサスエレクトロニクス株式会社 半導体記憶装置

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