CN100483547C - 具有改进的单元稳定性的静态随机存取存储器阵列及方法 - Google Patents
具有改进的单元稳定性的静态随机存取存储器阵列及方法 Download PDFInfo
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- CN100483547C CN100483547C CNB2005100832808A CN200510083280A CN100483547C CN 100483547 C CN100483547 C CN 100483547C CN B2005100832808 A CNB2005100832808 A CN B2005100832808A CN 200510083280 A CN200510083280 A CN 200510083280A CN 100483547 C CN100483547 C CN 100483547C
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Claims (38)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/950,928 US7173875B2 (en) | 2002-11-29 | 2004-09-27 | SRAM array with improved cell stability |
US10/950,928 | 2004-09-27 |
Publications (2)
Publication Number | Publication Date |
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CN1755836A CN1755836A (zh) | 2006-04-05 |
CN100483547C true CN100483547C (zh) | 2009-04-29 |
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Application Number | Title | Priority Date | Filing Date |
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CNB2005100832808A Active CN100483547C (zh) | 2004-09-27 | 2005-07-08 | 具有改进的单元稳定性的静态随机存取存储器阵列及方法 |
Country Status (2)
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CN (1) | CN100483547C (zh) |
TW (1) | TWI364040B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7292485B1 (en) * | 2006-07-31 | 2007-11-06 | Freescale Semiconductor, Inc. | SRAM having variable power supply and method therefor |
US7450454B1 (en) * | 2007-05-09 | 2008-11-11 | Freescale Semiconductor, Inc. | Low voltage data path in memory array |
TWI383400B (zh) * | 2008-08-01 | 2013-01-21 | Vanguard Int Semiconduct Corp | 靜態隨機存取記憶體燒機方法 |
TWI412037B (zh) * | 2008-12-05 | 2013-10-11 | Nat Univ Chung Cheng | Ten - transistor static random access memory architecture |
US9984730B2 (en) * | 2015-02-23 | 2018-05-29 | Qualcomm Incorporated | Negative supply rail positive boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods |
CN105976859B (zh) * | 2016-05-20 | 2019-05-17 | 西安紫光国芯半导体有限公司 | 一种超低写功耗的静态随机存储器写操作的控制方法 |
US10510385B2 (en) * | 2018-02-23 | 2019-12-17 | Globalfoundries U.S. Inc. | Write scheme for a static random access memory (SRAM) |
CN111243502B (zh) * | 2018-11-29 | 2021-04-23 | 成都辰显光电有限公司 | 一种像素驱动电路和显示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1490821A (zh) * | 2002-09-13 | 2004-04-21 | 松下电器产业株式会社 | 半导体存储装置及其驱动方法 |
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2005
- 2005-07-08 CN CNB2005100832808A patent/CN100483547C/zh active Active
- 2005-09-09 TW TW94131068A patent/TWI364040B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1490821A (zh) * | 2002-09-13 | 2004-04-21 | 松下电器产业株式会社 | 半导体存储装置及其驱动方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200617982A (en) | 2006-06-01 |
CN1755836A (zh) | 2006-04-05 |
TWI364040B (en) | 2012-05-11 |
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