CN1755836A - 具有改进的单元稳定性的静态随机存取存储器阵列 - Google Patents
具有改进的单元稳定性的静态随机存取存储器阵列 Download PDFInfo
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- CN1755836A CN1755836A CN200510083280.8A CN200510083280A CN1755836A CN 1755836 A CN1755836 A CN 1755836A CN 200510083280 A CN200510083280 A CN 200510083280A CN 1755836 A CN1755836 A CN 1755836A
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/950,928 | 2004-09-27 | ||
US10/950,928 US7173875B2 (en) | 2002-11-29 | 2004-09-27 | SRAM array with improved cell stability |
Publications (2)
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CN1755836A true CN1755836A (zh) | 2006-04-05 |
CN100483547C CN100483547C (zh) | 2009-04-29 |
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CNB2005100832808A Active CN100483547C (zh) | 2004-09-27 | 2005-07-08 | 具有改进的单元稳定性的静态随机存取存储器阵列及方法 |
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CN (1) | CN100483547C (zh) |
TW (1) | TWI364040B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101496107B (zh) * | 2006-07-31 | 2012-06-13 | 飞思卡尔半导体公司 | 具有可变电源的sram及其方法 |
CN105976859A (zh) * | 2016-05-20 | 2016-09-28 | 西安紫光国芯半导体有限公司 | 一种超低写功耗的静态随机存储器及其写操作的控制方法 |
CN107251143A (zh) * | 2015-02-23 | 2017-10-13 | 高通股份有限公司 | 用于采用p型场效应晶体管(pfet)写入端口的存储器位胞元的位线正升压写入辅助电路和相关系统及方法 |
CN110189781A (zh) * | 2018-02-23 | 2019-08-30 | 格芯公司 | 用于静态随机存取存储器(sram)的写入方案 |
CN111243502A (zh) * | 2018-11-29 | 2020-06-05 | 昆山工研院新型平板显示技术中心有限公司 | 一种像素驱动电路和显示装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7450454B1 (en) * | 2007-05-09 | 2008-11-11 | Freescale Semiconductor, Inc. | Low voltage data path in memory array |
TWI383400B (zh) * | 2008-08-01 | 2013-01-21 | Vanguard Int Semiconduct Corp | 靜態隨機存取記憶體燒機方法 |
TWI412037B (zh) * | 2008-12-05 | 2013-10-11 | Nat Univ Chung Cheng | Ten - transistor static random access memory architecture |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4154967B2 (ja) * | 2002-09-13 | 2008-09-24 | 松下電器産業株式会社 | 半導体記憶装置および駆動方法 |
-
2005
- 2005-07-08 CN CNB2005100832808A patent/CN100483547C/zh active Active
- 2005-09-09 TW TW094131068A patent/TWI364040B/zh active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101496107B (zh) * | 2006-07-31 | 2012-06-13 | 飞思卡尔半导体公司 | 具有可变电源的sram及其方法 |
CN107251143A (zh) * | 2015-02-23 | 2017-10-13 | 高通股份有限公司 | 用于采用p型场效应晶体管(pfet)写入端口的存储器位胞元的位线正升压写入辅助电路和相关系统及方法 |
CN107251143B (zh) * | 2015-02-23 | 2020-10-27 | 高通股份有限公司 | 将数据写入到存储器位胞元的方法、存储系统及计算机可读媒体 |
CN105976859A (zh) * | 2016-05-20 | 2016-09-28 | 西安紫光国芯半导体有限公司 | 一种超低写功耗的静态随机存储器及其写操作的控制方法 |
CN105976859B (zh) * | 2016-05-20 | 2019-05-17 | 西安紫光国芯半导体有限公司 | 一种超低写功耗的静态随机存储器写操作的控制方法 |
CN110189781A (zh) * | 2018-02-23 | 2019-08-30 | 格芯公司 | 用于静态随机存取存储器(sram)的写入方案 |
CN110189781B (zh) * | 2018-02-23 | 2023-08-15 | 马维尔亚洲私人有限公司 | 用于静态随机存取存储器(sram)的写入方案 |
CN111243502A (zh) * | 2018-11-29 | 2020-06-05 | 昆山工研院新型平板显示技术中心有限公司 | 一种像素驱动电路和显示装置 |
CN111243502B (zh) * | 2018-11-29 | 2021-04-23 | 成都辰显光电有限公司 | 一种像素驱动电路和显示装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI364040B (en) | 2012-05-11 |
TW200617982A (en) | 2006-06-01 |
CN100483547C (zh) | 2009-04-29 |
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