TW200617982A - Sram array with improved cell stability - Google Patents

Sram array with improved cell stability

Info

Publication number
TW200617982A
TW200617982A TW094131068A TW94131068A TW200617982A TW 200617982 A TW200617982 A TW 200617982A TW 094131068 A TW094131068 A TW 094131068A TW 94131068 A TW94131068 A TW 94131068A TW 200617982 A TW200617982 A TW 200617982A
Authority
TW
Taiwan
Prior art keywords
improved cell
array
cell stability
sram array
stability
Prior art date
Application number
TW094131068A
Other languages
Chinese (zh)
Other versions
TWI364040B (en
Inventor
Yuen H Chan
Rajiv V Joshi
Donald W Plass
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/950,928 external-priority patent/US7173875B2/en
Application filed by Ibm filed Critical Ibm
Publication of TW200617982A publication Critical patent/TW200617982A/en
Application granted granted Critical
Publication of TWI364040B publication Critical patent/TWI364040B/en

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  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

A CMOS static random access memory (SRAM) cell array, an integrated chip including the array and a method of accessing cells in the array with improved cell stability. Bit lines connected to half selected cells in the arrays are floated during cell accesses for improved cell stability.
TW094131068A 2004-09-27 2005-09-09 Sram array with improved cell stability and the method thereof TWI364040B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/950,928 US7173875B2 (en) 2002-11-29 2004-09-27 SRAM array with improved cell stability

Publications (2)

Publication Number Publication Date
TW200617982A true TW200617982A (en) 2006-06-01
TWI364040B TWI364040B (en) 2012-05-11

Family

ID=36688983

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094131068A TWI364040B (en) 2004-09-27 2005-09-09 Sram array with improved cell stability and the method thereof

Country Status (2)

Country Link
CN (1) CN100483547C (en)
TW (1) TWI364040B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI383400B (en) * 2008-08-01 2013-01-21 Vanguard Int Semiconduct Corp Burn-in methods for sram
TWI412037B (en) * 2008-12-05 2013-10-11 Nat Univ Chung Cheng Ten - transistor static random access memory architecture
TWI476781B (en) * 2007-05-09 2015-03-11 Freescale Semiconductor Inc Circuit related to low voltage data path in memory array and the operation method thereof

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7292485B1 (en) * 2006-07-31 2007-11-06 Freescale Semiconductor, Inc. SRAM having variable power supply and method therefor
US9842634B2 (en) * 2015-02-23 2017-12-12 Qualcomm Incorporated Wordline negative boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods
CN105976859B (en) * 2016-05-20 2019-05-17 西安紫光国芯半导体有限公司 A kind of control method of the ultralow Static RAM write operation for writing power consumption
US10510385B2 (en) * 2018-02-23 2019-12-17 Globalfoundries U.S. Inc. Write scheme for a static random access memory (SRAM)
CN111243502B (en) * 2018-11-29 2021-04-23 成都辰显光电有限公司 Pixel driving circuit and display device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4154967B2 (en) * 2002-09-13 2008-09-24 松下電器産業株式会社 Semiconductor memory device and driving method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI476781B (en) * 2007-05-09 2015-03-11 Freescale Semiconductor Inc Circuit related to low voltage data path in memory array and the operation method thereof
TWI383400B (en) * 2008-08-01 2013-01-21 Vanguard Int Semiconduct Corp Burn-in methods for sram
TWI412037B (en) * 2008-12-05 2013-10-11 Nat Univ Chung Cheng Ten - transistor static random access memory architecture

Also Published As

Publication number Publication date
CN1755836A (en) 2006-04-05
CN100483547C (en) 2009-04-29
TWI364040B (en) 2012-05-11

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