JP5179496B2 - メモリ回路及びメモリの書き込み方法 - Google Patents

メモリ回路及びメモリの書き込み方法 Download PDF

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Publication number
JP5179496B2
JP5179496B2 JP2009522905A JP2009522905A JP5179496B2 JP 5179496 B2 JP5179496 B2 JP 5179496B2 JP 2009522905 A JP2009522905 A JP 2009522905A JP 2009522905 A JP2009522905 A JP 2009522905A JP 5179496 B2 JP5179496 B2 JP 5179496B2
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Prior art keywords
line
memory cells
memory
power supply
cells
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JP2009522905A
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English (en)
Japanese (ja)
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JP2009545834A (ja
JP2009545834A5 (enExample
Inventor
アール． ルー、オルガ
エフ． チャイルズ、ローレンス
ディ． ガンダーソン、クレイグ
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NXP USA Inc
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NXP USA Inc
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Publication of JP2009545834A5 publication Critical patent/JP2009545834A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP2009522905A 2006-07-31 2007-05-10 メモリ回路及びメモリの書き込み方法 Active JP5179496B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/461,200 US7292485B1 (en) 2006-07-31 2006-07-31 SRAM having variable power supply and method therefor
US11/461,200 2006-07-31
PCT/US2007/068677 WO2008016737A2 (en) 2006-07-31 2007-05-10 Sram having variable power supply and method therefor

Publications (3)

Publication Number Publication Date
JP2009545834A JP2009545834A (ja) 2009-12-24
JP2009545834A5 JP2009545834A5 (enExample) 2010-07-01
JP5179496B2 true JP5179496B2 (ja) 2013-04-10

Family

ID=38653438

Family Applications (1)

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JP2009522905A Active JP5179496B2 (ja) 2006-07-31 2007-05-10 メモリ回路及びメモリの書き込み方法

Country Status (5)

Country Link
US (1) US7292485B1 (enExample)
JP (1) JP5179496B2 (enExample)
CN (1) CN101496107B (enExample)
TW (1) TW200807417A (enExample)
WO (1) WO2008016737A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9005409B2 (en) 2011-04-14 2015-04-14 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9017528B2 (en) 2011-04-14 2015-04-28 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9303329B2 (en) 2013-11-11 2016-04-05 Tel Nexx, Inc. Electrochemical deposition apparatus with remote catholyte fluid management

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8264896B2 (en) * 2008-07-31 2012-09-11 Freescale Semiconductor, Inc. Integrated circuit having an array supply voltage control circuit
KR20100028416A (ko) * 2008-09-04 2010-03-12 삼성전자주식회사 반도체 메모리 장치 및 상기 반도체 메모리 장치의 동작 방법
KR101446337B1 (ko) * 2008-09-08 2014-10-02 삼성전자주식회사 반도체 메모리 장치 및 상기 반도체 메모리 장치의 동작 방법
KR101505554B1 (ko) * 2008-09-08 2015-03-25 삼성전자주식회사 반도체 메모리 장치 및 상기 반도체 메모리 장치의 동작 방법
US8045402B2 (en) * 2009-06-29 2011-10-25 Arm Limited Assisting write operations to data storage cells
US20120120702A1 (en) * 2010-11-13 2012-05-17 Browning Christopher D Power saving technique in a content addressable memory during compare operations
WO2015171684A1 (en) * 2014-05-07 2015-11-12 Fong John Yit 4 bit nonvolatile flash or variable resistance memory
KR102714216B1 (ko) * 2016-12-06 2024-10-10 삼성전자주식회사 균일한 쓰기 특성을 갖는 에스램 장치
US10867646B2 (en) * 2018-03-28 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Bit line logic circuits and methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094008A (en) * 1976-06-18 1978-06-06 Ncr Corporation Alterable capacitor memory array
GB2259589A (en) * 1991-09-12 1993-03-17 Motorola Inc Self - timed random access memories
JP4198201B2 (ja) * 1995-06-02 2008-12-17 株式会社ルネサステクノロジ 半導体装置
JP4162076B2 (ja) 2002-05-30 2008-10-08 株式会社ルネサステクノロジ 半導体記憶装置
JP3906166B2 (ja) * 2003-02-25 2007-04-18 株式会社東芝 半導体記憶装置
US7333357B2 (en) 2003-12-11 2008-02-19 Texas Instruments Incorproated Static random access memory device having reduced leakage current during active mode and a method of operating thereof
JP4053510B2 (ja) 2004-03-23 2008-02-27 日本テキサス・インスツルメンツ株式会社 Ｓｒａｍ装置
JP2006127460A (ja) * 2004-06-09 2006-05-18 Renesas Technology Corp 半導体装置、半導体信号処理装置、およびクロスバースイッチ
JP4477456B2 (ja) * 2004-09-06 2010-06-09 富士通マイクロエレクトロニクス株式会社 半導体メモリ
CN100483547C (zh) * 2004-09-27 2009-04-29 国际商业机器公司 具有改进的单元稳定性的静态随机存取存储器阵列及方法
JP4912016B2 (ja) * 2005-05-23 2012-04-04 ルネサスエレクトロニクス株式会社 半導体記憶装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9005409B2 (en) 2011-04-14 2015-04-14 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9017528B2 (en) 2011-04-14 2015-04-28 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9303329B2 (en) 2013-11-11 2016-04-05 Tel Nexx, Inc. Electrochemical deposition apparatus with remote catholyte fluid management

Also Published As

Publication number Publication date
WO2008016737A3 (en) 2008-07-17
TW200807417A (en) 2008-02-01
JP2009545834A (ja) 2009-12-24
CN101496107A (zh) 2009-07-29
CN101496107B (zh) 2012-06-13
US7292485B1 (en) 2007-11-06
WO2008016737A2 (en) 2008-02-07

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