TW200807417A - SRAM having variable power supply and method therefor - Google Patents

SRAM having variable power supply and method therefor Download PDF

Info

Publication number
TW200807417A
TW200807417A TW096118282A TW96118282A TW200807417A TW 200807417 A TW200807417 A TW 200807417A TW 096118282 A TW096118282 A TW 096118282A TW 96118282 A TW96118282 A TW 96118282A TW 200807417 A TW200807417 A TW 200807417A
Authority
TW
Taiwan
Prior art keywords
line
power supply
memory
coupled
memory unit
Prior art date
Application number
TW096118282A
Other languages
English (en)
Chinese (zh)
Inventor
Olga R Lu
Lawrence F Childs
Craig D Gunderson
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38653438&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW200807417(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200807417A publication Critical patent/TW200807417A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
TW096118282A 2006-07-31 2007-05-23 SRAM having variable power supply and method therefor TW200807417A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/461,200 US7292485B1 (en) 2006-07-31 2006-07-31 SRAM having variable power supply and method therefor

Publications (1)

Publication Number Publication Date
TW200807417A true TW200807417A (en) 2008-02-01

Family

ID=38653438

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096118282A TW200807417A (en) 2006-07-31 2007-05-23 SRAM having variable power supply and method therefor

Country Status (5)

Country Link
US (1) US7292485B1 (enExample)
JP (1) JP5179496B2 (enExample)
CN (1) CN101496107B (enExample)
TW (1) TW200807417A (enExample)
WO (1) WO2008016737A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8264896B2 (en) * 2008-07-31 2012-09-11 Freescale Semiconductor, Inc. Integrated circuit having an array supply voltage control circuit
KR20100028416A (ko) * 2008-09-04 2010-03-12 삼성전자주식회사 반도체 메모리 장치 및 상기 반도체 메모리 장치의 동작 방법
KR101446337B1 (ko) * 2008-09-08 2014-10-02 삼성전자주식회사 반도체 메모리 장치 및 상기 반도체 메모리 장치의 동작 방법
KR101505554B1 (ko) * 2008-09-08 2015-03-25 삼성전자주식회사 반도체 메모리 장치 및 상기 반도체 메모리 장치의 동작 방법
US8045402B2 (en) * 2009-06-29 2011-10-25 Arm Limited Assisting write operations to data storage cells
US20120120702A1 (en) * 2010-11-13 2012-05-17 Browning Christopher D Power saving technique in a content addressable memory during compare operations
US9017528B2 (en) 2011-04-14 2015-04-28 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9005409B2 (en) 2011-04-14 2015-04-14 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9303329B2 (en) 2013-11-11 2016-04-05 Tel Nexx, Inc. Electrochemical deposition apparatus with remote catholyte fluid management
WO2015171684A1 (en) * 2014-05-07 2015-11-12 Fong John Yit 4 bit nonvolatile flash or variable resistance memory
KR102714216B1 (ko) * 2016-12-06 2024-10-10 삼성전자주식회사 균일한 쓰기 특성을 갖는 에스램 장치
US10867646B2 (en) * 2018-03-28 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Bit line logic circuits and methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094008A (en) * 1976-06-18 1978-06-06 Ncr Corporation Alterable capacitor memory array
GB2259589A (en) * 1991-09-12 1993-03-17 Motorola Inc Self - timed random access memories
JP4198201B2 (ja) * 1995-06-02 2008-12-17 株式会社ルネサステクノロジ 半導体装置
JP4162076B2 (ja) 2002-05-30 2008-10-08 株式会社ルネサステクノロジ 半導体記憶装置
JP3906166B2 (ja) * 2003-02-25 2007-04-18 株式会社東芝 半導体記憶装置
US7333357B2 (en) 2003-12-11 2008-02-19 Texas Instruments Incorproated Static random access memory device having reduced leakage current during active mode and a method of operating thereof
JP4053510B2 (ja) 2004-03-23 2008-02-27 日本テキサス・インスツルメンツ株式会社 Ｓｒａｍ装置
JP2006127460A (ja) * 2004-06-09 2006-05-18 Renesas Technology Corp 半導体装置、半導体信号処理装置、およびクロスバースイッチ
JP4477456B2 (ja) * 2004-09-06 2010-06-09 富士通マイクロエレクトロニクス株式会社 半導体メモリ
CN100483547C (zh) * 2004-09-27 2009-04-29 国际商业机器公司 具有改进的单元稳定性的静态随机存取存储器阵列及方法
JP4912016B2 (ja) * 2005-05-23 2012-04-04 ルネサスエレクトロニクス株式会社 半導体記憶装置

Also Published As

Publication number Publication date
WO2008016737A3 (en) 2008-07-17
JP2009545834A (ja) 2009-12-24
CN101496107A (zh) 2009-07-29
JP5179496B2 (ja) 2013-04-10
CN101496107B (zh) 2012-06-13
US7292485B1 (en) 2007-11-06
WO2008016737A2 (en) 2008-02-07

Similar Documents

Publication Publication Date Title
TW200807417A (en) SRAM having variable power supply and method therefor
US7864617B2 (en) Memory with reduced power supply voltage for a write operation
US9324413B2 (en) Write assist circuit, memory device and method
TWI581370B (zh) 具有高能源效率讀取架構之記憶體陣列
TW200823901A (en) Two-port SRAM having improved write operation
TW200807412A (en) Method and system for providing a magnetic memory structure utilizing spin transfer
TW200809870A (en) Integrated circuit having a memory with low voltage read/write operation
US9305635B2 (en) High density memory structure
US7626878B1 (en) Active bit line charge keeper
JPH0140437B2 (enExample)
TW577076B (en) Semiconductor memory device
US6469924B2 (en) Memory architecture with refresh and sense amplifiers
KR102326332B1 (ko) 독출 컬럼 선택 네거티브 부스트 드라이버 회로 및 시스템
Cosemans et al. A low-power embedded SRAM for wireless applications
TW201409482A (zh) 可雙向追蹤時序參數之記憶裝置
CN106663465A (zh) 非易失性半导体存储器
US9928182B2 (en) Direct interface between SRAM and non-volatile memory providing space efficiency by matching pitch in both memories
US9275724B2 (en) Method of writing to and reading data from a three-dimensional two port register file
US7161827B2 (en) SRAM having improved cell stability and method therefor
TW200535843A (en) Memory device and method for writing data in memory cell with boosted bitline voltage
US11264087B2 (en) Semiconductor device and method of driving semiconductor device
US7200020B2 (en) Storage element with clear operation and method thereof
US20140119100A1 (en) Sram with improved write operation
CN101023237A (zh) 具有数据保持锁存器的存储器设备
JP2937719B2 (ja) 半導体記憶装置