JP2010510615A5 - - Google Patents

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Publication number
JP2010510615A5
JP2010510615A5 JP2009537251A JP2009537251A JP2010510615A5 JP 2010510615 A5 JP2010510615 A5 JP 2010510615A5 JP 2009537251 A JP2009537251 A JP 2009537251A JP 2009537251 A JP2009537251 A JP 2009537251A JP 2010510615 A5 JP2010510615 A5 JP 2010510615A5
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JP
Japan
Prior art keywords
power supply
coupled
supply voltage
wwl0
word line
Prior art date
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Application number
JP2009537251A
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English (en)
Japanese (ja)
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JP5675105B2 (ja
JP2010510615A (ja
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Publication date
Priority claimed from US11/561,206 external-priority patent/US7440313B2/en
Application filed filed Critical
Publication of JP2010510615A publication Critical patent/JP2010510615A/ja
Publication of JP2010510615A5 publication Critical patent/JP2010510615A5/ja
Application granted granted Critical
Publication of JP5675105B2 publication Critical patent/JP5675105B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009537251A 2006-11-17 2007-09-27 改良形書込み動作を行う２ポートｓｒａｍ Expired - Fee Related JP5675105B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/561,206 2006-11-17
US11/561,206 US7440313B2 (en) 2006-11-17 2006-11-17 Two-port SRAM having improved write operation
PCT/US2007/079709 WO2008063741A2 (en) 2006-11-17 2007-09-27 Two-port sram having improved write operation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013203039A Division JP2013257937A (ja) 2006-11-17 2013-09-30 改良形書込み動作を行う２ポートｓｒａｍとその動作方法

Publications (3)

Publication Number Publication Date
JP2010510615A JP2010510615A (ja) 2010-04-02
JP2010510615A5 true JP2010510615A5 (enExample) 2010-11-11
JP5675105B2 JP5675105B2 (ja) 2015-02-25

Family

ID=39416754

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009537251A Expired - Fee Related JP5675105B2 (ja) 2006-11-17 2007-09-27 改良形書込み動作を行う２ポートｓｒａｍ
JP2013203039A Pending JP2013257937A (ja) 2006-11-17 2013-09-30 改良形書込み動作を行う２ポートｓｒａｍとその動作方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013203039A Pending JP2013257937A (ja) 2006-11-17 2013-09-30 改良形書込み動作を行う２ポートｓｒａｍとその動作方法

Country Status (5)

Country Link
US (1) US7440313B2 (enExample)
JP (2) JP5675105B2 (enExample)
CN (1) CN101529521B (enExample)
TW (1) TW200823901A (enExample)
WO (1) WO2008063741A2 (enExample)

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US7864600B2 (en) * 2008-06-19 2011-01-04 Texas Instruments Incorporated Memory cell employing reduced voltage
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US7835175B2 (en) * 2008-10-13 2010-11-16 Mediatek Inc. Static random access memories and access methods thereof
US7852661B2 (en) * 2008-10-22 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Write-assist SRAM cell
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US8432724B2 (en) * 2010-04-02 2013-04-30 Altera Corporation Memory elements with soft error upset immunity
CN101877243B (zh) * 2010-04-22 2015-09-30 上海华虹宏力半导体制造有限公司 静态随机存取存储器
CN101819815B (zh) * 2010-04-29 2015-05-20 上海华虹宏力半导体制造有限公司 一种消除读取干扰的静态随机存储器
TWI464745B (zh) * 2010-07-06 2014-12-11 Faraday Tech Corp 具有由資料控制之電源供應的靜態隨機存取記憶體
US8824230B2 (en) * 2011-09-30 2014-09-02 Qualcomm Incorporated Method and apparatus of reducing leakage power in multiple port SRAM memory cell
TWI480871B (zh) * 2012-02-22 2015-04-11 Nat Univ Chung Hsing Static random access memory
US9111600B2 (en) * 2012-03-30 2015-08-18 Intel Corporation Memory cell with improved write margin
US9153304B2 (en) * 2012-06-28 2015-10-06 Jaydeep P. Kulkarni Apparatus for reducing write minimum supply voltage for memory
US8817528B2 (en) * 2012-08-17 2014-08-26 Globalfoundries Inc. Device comprising a plurality of static random access memory cells and method of operation thereof
US8804437B2 (en) * 2012-09-25 2014-08-12 Nvidia Corporation Column select multiplexer and method for static random-access memory and computer memory subsystem employing the same
US8913456B2 (en) 2012-10-26 2014-12-16 Freescale Semiconductor, Inc. SRAM with improved write operation
US9224453B2 (en) * 2013-03-13 2015-12-29 Qualcomm Incorporated Write-assisted memory with enhanced speed
CN105340018B (zh) * 2013-07-02 2018-05-08 株式会社索思未来 半导体存储装置
US9281056B2 (en) * 2014-06-18 2016-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Static random access memory and method of using the same
US9336864B2 (en) * 2014-08-29 2016-05-10 Qualcomm Incorporated Silicon germanium read port for a static random access memory register file
US9230637B1 (en) 2014-09-09 2016-01-05 Globalfoundries Inc. SRAM circuit with increased write margin
US9484084B2 (en) * 2015-02-13 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Pulling devices for driving data lines
US10026456B2 (en) 2015-02-23 2018-07-17 Qualcomm Incorporated Bitline positive boost write-assist circuits for memory bit cells employing a P-type Field-Effect transistor (PFET) write port(s), and related systems and methods
US9741452B2 (en) 2015-02-23 2017-08-22 Qualcomm Incorporated Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s), and related memory systems and methods
CN106445831A (zh) * 2015-08-11 2017-02-22 深圳市中兴微电子技术有限公司 一种存储单元和处理系统
US11170844B1 (en) * 2020-07-07 2021-11-09 Aril Computer Corporation Ultra-low supply-voltage static random-access memory (SRAM) with 8-transistor cell with P and N pass gates to same bit lines

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