JP2008103028A5 - - Google Patents

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Publication number
JP2008103028A5
JP2008103028A5 JP2006285015A JP2006285015A JP2008103028A5 JP 2008103028 A5 JP2008103028 A5 JP 2008103028A5 JP 2006285015 A JP2006285015 A JP 2006285015A JP 2006285015 A JP2006285015 A JP 2006285015A JP 2008103028 A5 JP2008103028 A5 JP 2008103028A5
Authority
JP
Japan
Prior art keywords
storage node
transistor
semiconductor memory
memory device
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006285015A
Other languages
English (en)
Japanese (ja)
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JP2008103028A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006285015A priority Critical patent/JP2008103028A/ja
Priority claimed from JP2006285015A external-priority patent/JP2008103028A/ja
Priority to US11/826,246 priority patent/US7589991B2/en
Priority to CNA2007101419953A priority patent/CN101165806A/zh
Publication of JP2008103028A publication Critical patent/JP2008103028A/ja
Publication of JP2008103028A5 publication Critical patent/JP2008103028A5/ja
Withdrawn legal-status Critical Current

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JP2006285015A 2006-10-19 2006-10-19 半導体記憶装置 Withdrawn JP2008103028A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006285015A JP2008103028A (ja) 2006-10-19 2006-10-19 半導体記憶装置
US11/826,246 US7589991B2 (en) 2006-10-19 2007-07-13 Semiconductor memory device
CNA2007101419953A CN101165806A (zh) 2006-10-19 2007-08-17 半导体存储器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006285015A JP2008103028A (ja) 2006-10-19 2006-10-19 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2008103028A JP2008103028A (ja) 2008-05-01
JP2008103028A5 true JP2008103028A5 (enExample) 2009-11-12

Family

ID=39317727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006285015A Withdrawn JP2008103028A (ja) 2006-10-19 2006-10-19 半導体記憶装置

Country Status (3)

Country Link
US (1) US7589991B2 (enExample)
JP (1) JP2008103028A (enExample)
CN (1) CN101165806A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4353393B2 (ja) 2001-06-05 2009-10-28 株式会社ルネサステクノロジ 半導体集積回路装置
US7619947B2 (en) * 2007-10-31 2009-11-17 Texas Instruments Incorporated Integrated circuit having a supply voltage controller capable of floating a variable supply voltage
JP5417952B2 (ja) * 2009-04-08 2014-02-19 富士通セミコンダクター株式会社 半導体メモリおよびシステム
CN101877243B (zh) * 2010-04-22 2015-09-30 上海华虹宏力半导体制造有限公司 静态随机存取存储器
CN101819815B (zh) * 2010-04-29 2015-05-20 上海华虹宏力半导体制造有限公司 一种消除读取干扰的静态随机存储器
JP2011248932A (ja) 2010-05-21 2011-12-08 Panasonic Corp 半導体記憶装置
US8462542B2 (en) * 2010-06-24 2013-06-11 Texas Instruments Incorporated Bit-by-bit write assist for solid-state memory
US8305798B2 (en) * 2010-07-13 2012-11-06 Texas Instruments Incorporated Memory cell with equalization write assist in solid-state memory
CN103137187B (zh) * 2011-11-28 2015-12-09 上海华虹宏力半导体制造有限公司 一种sram的旁路结构
KR20140092537A (ko) * 2013-01-16 2014-07-24 삼성전자주식회사 메모리 셀 및 이를 포함하는 메모리 장치
JP5641116B2 (ja) * 2013-09-18 2014-12-17 富士通セミコンダクター株式会社 半導体メモリおよびシステム
US9928886B2 (en) * 2016-06-23 2018-03-27 Chih-Cheng Hsiao Low power memory device
JP6984166B2 (ja) * 2017-05-16 2021-12-17 富士通株式会社 記憶回路及び記憶回路の制御方法
KR102755896B1 (ko) * 2023-04-14 2025-01-21 서울대학교산학협력단 랜덤 액세스 메모리 및 그 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1202530C (zh) * 1998-04-01 2005-05-18 三菱电机株式会社 在低电源电压下高速动作的静态型半导体存储装置
JP2001143476A (ja) 1999-11-15 2001-05-25 Mitsubishi Electric Corp スタティック型半導体記憶装置
JP2002042476A (ja) 2000-07-25 2002-02-08 Mitsubishi Electric Corp スタティック型半導体記憶装置
US6618289B2 (en) 2001-10-29 2003-09-09 Atmel Corporation High voltage bit/column latch for Vcc operation
US20030190771A1 (en) * 2002-03-07 2003-10-09 02Ic, Ltd. Integrated ram and non-volatile memory cell method and structure
JP4162076B2 (ja) 2002-05-30 2008-10-08 株式会社ルネサステクノロジ 半導体記憶装置
JP2004055099A (ja) * 2002-07-24 2004-02-19 Renesas Technology Corp 差動増幅回路およびそれを用いた半導体記憶装置
US6992916B2 (en) * 2003-06-13 2006-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell design with high resistor CMOS gate structure for soft error rate improvement
JP2006012968A (ja) * 2004-06-23 2006-01-12 Nec Electronics Corp 半導体集積回路装置及びその設計方法
US7161827B2 (en) * 2005-01-12 2007-01-09 Freescale Semiconductor, Inc. SRAM having improved cell stability and method therefor
US7164596B1 (en) 2005-07-28 2007-01-16 Texas Instruments Incorporated SRAM cell with column select line
US7289354B2 (en) * 2005-07-28 2007-10-30 Texas Instruments Incorporated Memory array with a delayed wordline boost

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