CN101165806A - 半导体存储器件 - Google Patents

半导体存储器件 Download PDF

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Publication number
CN101165806A
CN101165806A CNA2007101419953A CN200710141995A CN101165806A CN 101165806 A CN101165806 A CN 101165806A CN A2007101419953 A CNA2007101419953 A CN A2007101419953A CN 200710141995 A CN200710141995 A CN 200710141995A CN 101165806 A CN101165806 A CN 101165806A
Authority
CN
China
Prior art keywords
mentioned
transistor
memory node
voltage
storage node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007101419953A
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English (en)
Chinese (zh)
Inventor
增尾昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN101165806A publication Critical patent/CN101165806A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
CNA2007101419953A 2006-10-19 2007-08-17 半导体存储器件 Pending CN101165806A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006285015A JP2008103028A (ja) 2006-10-19 2006-10-19 半導体記憶装置
JP285015/2006 2006-10-19

Publications (1)

Publication Number Publication Date
CN101165806A true CN101165806A (zh) 2008-04-23

Family

ID=39317727

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101419953A Pending CN101165806A (zh) 2006-10-19 2007-08-17 半导体存储器件

Country Status (3)

Country Link
US (1) US7589991B2 (enExample)
JP (1) JP2008103028A (enExample)
CN (1) CN101165806A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101819815A (zh) * 2010-04-29 2010-09-01 上海宏力半导体制造有限公司 一种消除读取干扰的静态随机存储器
CN101877243A (zh) * 2010-04-22 2010-11-03 上海宏力半导体制造有限公司 静态随机存取存储器
CN103137187A (zh) * 2011-11-28 2013-06-05 上海华虹Nec电子有限公司 一种sram的旁路结构
CN103928050A (zh) * 2013-01-16 2014-07-16 三星电子株式会社 存储单元和具有存储单元的存储设备
CN107545916A (zh) * 2016-06-23 2018-01-05 萧志成 存储器装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4353393B2 (ja) 2001-06-05 2009-10-28 株式会社ルネサステクノロジ 半導体集積回路装置
US7619947B2 (en) * 2007-10-31 2009-11-17 Texas Instruments Incorporated Integrated circuit having a supply voltage controller capable of floating a variable supply voltage
JP5417952B2 (ja) * 2009-04-08 2014-02-19 富士通セミコンダクター株式会社 半導体メモリおよびシステム
JP2011248932A (ja) 2010-05-21 2011-12-08 Panasonic Corp 半導体記憶装置
US8462542B2 (en) * 2010-06-24 2013-06-11 Texas Instruments Incorporated Bit-by-bit write assist for solid-state memory
US8305798B2 (en) * 2010-07-13 2012-11-06 Texas Instruments Incorporated Memory cell with equalization write assist in solid-state memory
JP5641116B2 (ja) * 2013-09-18 2014-12-17 富士通セミコンダクター株式会社 半導体メモリおよびシステム
JP6984166B2 (ja) * 2017-05-16 2021-12-17 富士通株式会社 記憶回路及び記憶回路の制御方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1202530C (zh) * 1998-04-01 2005-05-18 三菱电机株式会社 在低电源电压下高速动作的静态型半导体存储装置
JP2001143476A (ja) * 1999-11-15 2001-05-25 Mitsubishi Electric Corp スタティック型半導体記憶装置
JP2002042476A (ja) 2000-07-25 2002-02-08 Mitsubishi Electric Corp スタティック型半導体記憶装置
US6618289B2 (en) * 2001-10-29 2003-09-09 Atmel Corporation High voltage bit/column latch for Vcc operation
US20030190771A1 (en) * 2002-03-07 2003-10-09 02Ic, Ltd. Integrated ram and non-volatile memory cell method and structure
JP4162076B2 (ja) * 2002-05-30 2008-10-08 株式会社ルネサステクノロジ 半導体記憶装置
JP2004055099A (ja) * 2002-07-24 2004-02-19 Renesas Technology Corp 差動増幅回路およびそれを用いた半導体記憶装置
US6992916B2 (en) * 2003-06-13 2006-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell design with high resistor CMOS gate structure for soft error rate improvement
JP2006012968A (ja) * 2004-06-23 2006-01-12 Nec Electronics Corp 半導体集積回路装置及びその設計方法
US7161827B2 (en) * 2005-01-12 2007-01-09 Freescale Semiconductor, Inc. SRAM having improved cell stability and method therefor
US7164596B1 (en) * 2005-07-28 2007-01-16 Texas Instruments Incorporated SRAM cell with column select line
US7289354B2 (en) * 2005-07-28 2007-10-30 Texas Instruments Incorporated Memory array with a delayed wordline boost

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101877243A (zh) * 2010-04-22 2010-11-03 上海宏力半导体制造有限公司 静态随机存取存储器
CN101877243B (zh) * 2010-04-22 2015-09-30 上海华虹宏力半导体制造有限公司 静态随机存取存储器
CN101819815A (zh) * 2010-04-29 2010-09-01 上海宏力半导体制造有限公司 一种消除读取干扰的静态随机存储器
CN101819815B (zh) * 2010-04-29 2015-05-20 上海华虹宏力半导体制造有限公司 一种消除读取干扰的静态随机存储器
CN103137187A (zh) * 2011-11-28 2013-06-05 上海华虹Nec电子有限公司 一种sram的旁路结构
CN103137187B (zh) * 2011-11-28 2015-12-09 上海华虹宏力半导体制造有限公司 一种sram的旁路结构
CN103928050A (zh) * 2013-01-16 2014-07-16 三星电子株式会社 存储单元和具有存储单元的存储设备
CN103928050B (zh) * 2013-01-16 2019-01-22 三星电子株式会社 存储单元和具有存储单元的存储设备
CN107545916A (zh) * 2016-06-23 2018-01-05 萧志成 存储器装置

Also Published As

Publication number Publication date
US7589991B2 (en) 2009-09-15
JP2008103028A (ja) 2008-05-01
US20080094879A1 (en) 2008-04-24

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SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20080423