JP2008103028A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

Info

Publication number
JP2008103028A
JP2008103028A JP2006285015A JP2006285015A JP2008103028A JP 2008103028 A JP2008103028 A JP 2008103028A JP 2006285015 A JP2006285015 A JP 2006285015A JP 2006285015 A JP2006285015 A JP 2006285015A JP 2008103028 A JP2008103028 A JP 2008103028A
Authority
JP
Japan
Prior art keywords
storage node
voltage
semiconductor memory
memory device
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006285015A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008103028A5 (enExample
Inventor
Akira Masuo
昭 増尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2006285015A priority Critical patent/JP2008103028A/ja
Priority to US11/826,246 priority patent/US7589991B2/en
Priority to CNA2007101419953A priority patent/CN101165806A/zh
Publication of JP2008103028A publication Critical patent/JP2008103028A/ja
Publication of JP2008103028A5 publication Critical patent/JP2008103028A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP2006285015A 2006-10-19 2006-10-19 半導体記憶装置 Withdrawn JP2008103028A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006285015A JP2008103028A (ja) 2006-10-19 2006-10-19 半導体記憶装置
US11/826,246 US7589991B2 (en) 2006-10-19 2007-07-13 Semiconductor memory device
CNA2007101419953A CN101165806A (zh) 2006-10-19 2007-08-17 半导体存储器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006285015A JP2008103028A (ja) 2006-10-19 2006-10-19 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2008103028A true JP2008103028A (ja) 2008-05-01
JP2008103028A5 JP2008103028A5 (enExample) 2009-11-12

Family

ID=39317727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006285015A Withdrawn JP2008103028A (ja) 2006-10-19 2006-10-19 半導体記憶装置

Country Status (3)

Country Link
US (1) US7589991B2 (enExample)
JP (1) JP2008103028A (enExample)
CN (1) CN101165806A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245388A (ja) * 2009-04-08 2010-10-28 Fujitsu Semiconductor Ltd 半導体メモリおよびシステム
JP2014026716A (ja) * 2013-09-18 2014-02-06 Fujitsu Semiconductor Ltd 半導体メモリおよびシステム
US8665637B2 (en) 2010-05-21 2014-03-04 Panasonic Corporation Semiconductor memory
JP2018195942A (ja) * 2017-05-16 2018-12-06 富士通株式会社 記憶回路及び記憶回路の制御方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4353393B2 (ja) 2001-06-05 2009-10-28 株式会社ルネサステクノロジ 半導体集積回路装置
US7619947B2 (en) * 2007-10-31 2009-11-17 Texas Instruments Incorporated Integrated circuit having a supply voltage controller capable of floating a variable supply voltage
CN101877243B (zh) * 2010-04-22 2015-09-30 上海华虹宏力半导体制造有限公司 静态随机存取存储器
CN101819815B (zh) * 2010-04-29 2015-05-20 上海华虹宏力半导体制造有限公司 一种消除读取干扰的静态随机存储器
US8462542B2 (en) * 2010-06-24 2013-06-11 Texas Instruments Incorporated Bit-by-bit write assist for solid-state memory
US8305798B2 (en) * 2010-07-13 2012-11-06 Texas Instruments Incorporated Memory cell with equalization write assist in solid-state memory
CN103137187B (zh) * 2011-11-28 2015-12-09 上海华虹宏力半导体制造有限公司 一种sram的旁路结构
KR20140092537A (ko) * 2013-01-16 2014-07-24 삼성전자주식회사 메모리 셀 및 이를 포함하는 메모리 장치
US9928886B2 (en) * 2016-06-23 2018-03-27 Chih-Cheng Hsiao Low power memory device
KR102755896B1 (ko) * 2023-04-14 2025-01-21 서울대학교산학협력단 랜덤 액세스 메모리 및 그 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1202530C (zh) * 1998-04-01 2005-05-18 三菱电机株式会社 在低电源电压下高速动作的静态型半导体存储装置
JP2001143476A (ja) 1999-11-15 2001-05-25 Mitsubishi Electric Corp スタティック型半導体記憶装置
JP2002042476A (ja) 2000-07-25 2002-02-08 Mitsubishi Electric Corp スタティック型半導体記憶装置
US6618289B2 (en) 2001-10-29 2003-09-09 Atmel Corporation High voltage bit/column latch for Vcc operation
US20030190771A1 (en) * 2002-03-07 2003-10-09 02Ic, Ltd. Integrated ram and non-volatile memory cell method and structure
JP4162076B2 (ja) 2002-05-30 2008-10-08 株式会社ルネサステクノロジ 半導体記憶装置
JP2004055099A (ja) * 2002-07-24 2004-02-19 Renesas Technology Corp 差動増幅回路およびそれを用いた半導体記憶装置
US6992916B2 (en) * 2003-06-13 2006-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell design with high resistor CMOS gate structure for soft error rate improvement
JP2006012968A (ja) * 2004-06-23 2006-01-12 Nec Electronics Corp 半導体集積回路装置及びその設計方法
US7161827B2 (en) * 2005-01-12 2007-01-09 Freescale Semiconductor, Inc. SRAM having improved cell stability and method therefor
US7164596B1 (en) 2005-07-28 2007-01-16 Texas Instruments Incorporated SRAM cell with column select line
US7289354B2 (en) * 2005-07-28 2007-10-30 Texas Instruments Incorporated Memory array with a delayed wordline boost

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245388A (ja) * 2009-04-08 2010-10-28 Fujitsu Semiconductor Ltd 半導体メモリおよびシステム
US8665637B2 (en) 2010-05-21 2014-03-04 Panasonic Corporation Semiconductor memory
JP2014026716A (ja) * 2013-09-18 2014-02-06 Fujitsu Semiconductor Ltd 半導体メモリおよびシステム
JP2018195942A (ja) * 2017-05-16 2018-12-06 富士通株式会社 記憶回路及び記憶回路の制御方法

Also Published As

Publication number Publication date
US20080094879A1 (en) 2008-04-24
US7589991B2 (en) 2009-09-15
CN101165806A (zh) 2008-04-23

Similar Documents

Publication Publication Date Title
US7589991B2 (en) Semiconductor memory device
KR100932342B1 (ko) 별개의 판독-기록 회로를 구비한 ｓｒａｍ 셀
TWI485705B (zh) 具備列式讀取及／或寫入輔助電路之記憶體電路
TWI490867B (zh) 具容忍變異字元線驅動抑制機制之隨機存取記憶體
US7885125B2 (en) Semiconductor memory device having integrated driving word line intermediate voltages by pull-up circuits
US8576655B2 (en) Semiconductor memories
US20090161410A1 (en) Seven transistor sram cell
US8000130B2 (en) Semiconductor memory device with sense circuit connected to sense node coupled to bit line
US8514612B2 (en) Semiconductor memory device
US8391097B2 (en) Memory word-line driver having reduced power consumption
US20080151604A1 (en) Semiconductor memory device
JP2007172715A (ja) 半導体記憶装置およびその制御方法
US20090303776A1 (en) Static random access memory cell
CN102906819B (zh) 半导体存储装置
JP2006059523A (ja) メモリーセル
JP2009020959A (ja) 半導体記憶装置
US8144523B2 (en) Semiconductor storage device
JP2005085454A (ja) メモリアレイを含む集積回路装置、およびセンスアンプを有するメモリを組込んだ集積回路装置においてパワーゲートするための方法
JP2006073146A (ja) 半導体メモリ
JP2010287287A (ja) 半導体装置
US7821843B2 (en) Partial write-back in read and write-back of a memory
JP5415672B2 (ja) 半導体装置
US7489581B2 (en) Semiconductor memory
JP4008906B2 (ja) 半導体記憶装置
US9406374B1 (en) Mitigating leakage in memory circuits

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090928

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090928

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20111020