JP2016225364A5 - - Google Patents
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- Publication number
- JP2016225364A5 JP2016225364A5 JP2015107672A JP2015107672A JP2016225364A5 JP 2016225364 A5 JP2016225364 A5 JP 2016225364A5 JP 2015107672 A JP2015107672 A JP 2015107672A JP 2015107672 A JP2015107672 A JP 2015107672A JP 2016225364 A5 JP2016225364 A5 JP 2016225364A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- voltage
- semiconductor device
- electrodes
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002001 electrolyte material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015107672A JP6649700B2 (ja) | 2015-05-27 | 2015-05-27 | 半導体装置およびその製造方法 |
| PCT/JP2016/002430 WO2016189831A1 (en) | 2015-05-27 | 2016-05-18 | Semiconductor device and method of manufacturing the same |
| KR1020177033165A KR20180012261A (ko) | 2015-05-27 | 2016-05-18 | 반도체 디바이스 및 그 제조 방법 |
| US15/574,771 US10340279B2 (en) | 2015-05-27 | 2016-05-18 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015107672A JP6649700B2 (ja) | 2015-05-27 | 2015-05-27 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016225364A JP2016225364A (ja) | 2016-12-28 |
| JP2016225364A5 true JP2016225364A5 (enExample) | 2018-07-05 |
| JP6649700B2 JP6649700B2 (ja) | 2020-02-19 |
Family
ID=56113025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015107672A Expired - Fee Related JP6649700B2 (ja) | 2015-05-27 | 2015-05-27 | 半導体装置およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10340279B2 (enExample) |
| JP (1) | JP6649700B2 (enExample) |
| KR (1) | KR20180012261A (enExample) |
| WO (1) | WO2016189831A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019054171A (ja) | 2017-09-15 | 2019-04-04 | 東芝メモリ株式会社 | 記憶装置 |
| US11527473B2 (en) | 2019-11-12 | 2022-12-13 | Samsung Electronics Co., Ltd. | Semiconductor memory device including capacitor |
| KR102825706B1 (ko) | 2019-11-12 | 2025-06-25 | 삼성전자주식회사 | 커패시터를 포함하는 반도체 메모리 장치 |
| WO2023011561A1 (zh) * | 2021-08-06 | 2023-02-09 | 南方科技大学 | 存储器 |
| EP4167702A1 (en) * | 2021-10-18 | 2023-04-19 | Samsung Electronics Co., Ltd. | Non-volatile memory device and method of manufacturing the same |
| JP2023137598A (ja) * | 2022-03-18 | 2023-09-29 | キオクシア株式会社 | 半導体装置 |
| CN117794233A (zh) * | 2022-09-20 | 2024-03-29 | 华为技术有限公司 | 一种存储芯片、其操作方法及电子设备 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7420242B2 (en) * | 2005-08-31 | 2008-09-02 | Macronix International Co., Ltd. | Stacked bit line dual word line nonvolatile memory |
| JP5091491B2 (ja) | 2007-01-23 | 2012-12-05 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP2010225918A (ja) * | 2009-03-24 | 2010-10-07 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
| US8383512B2 (en) * | 2011-01-19 | 2013-02-26 | Macronix International Co., Ltd. | Method for making multilayer connection structure |
| JP5751552B2 (ja) * | 2011-03-04 | 2015-07-22 | マクロニクス インターナショナル カンパニー リミテッド | 積層した接続レベルを有する集積回路装置用マスク数の低減法 |
| JP5550604B2 (ja) | 2011-06-15 | 2014-07-16 | 株式会社東芝 | 三次元半導体装置及びその製造方法 |
| KR101818975B1 (ko) * | 2011-10-14 | 2018-03-02 | 삼성전자주식회사 | 수직형 반도체 소자의 제조 방법 |
| JP2013187335A (ja) * | 2012-03-07 | 2013-09-19 | Toshiba Corp | 半導体装置及びその製造方法 |
| US9099538B2 (en) * | 2013-09-17 | 2015-08-04 | Macronix International Co., Ltd. | Conductor with a plurality of vertical extensions for a 3D device |
| US8970040B1 (en) * | 2013-09-26 | 2015-03-03 | Macronix International Co., Ltd. | Contact structure and forming method |
| JP2015076556A (ja) * | 2013-10-10 | 2015-04-20 | ソニー株式会社 | メモリ装置、書込方法、読出方法 |
| US9455265B2 (en) * | 2013-11-27 | 2016-09-27 | Macronix International Co., Ltd. | Semiconductor 3D stacked structure and manufacturing method of the same |
-
2015
- 2015-05-27 JP JP2015107672A patent/JP6649700B2/ja not_active Expired - Fee Related
-
2016
- 2016-05-18 KR KR1020177033165A patent/KR20180012261A/ko not_active Withdrawn
- 2016-05-18 US US15/574,771 patent/US10340279B2/en active Active
- 2016-05-18 WO PCT/JP2016/002430 patent/WO2016189831A1/en not_active Ceased
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