JP2012019092A5 - - Google Patents
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- Publication number
- JP2012019092A5 JP2012019092A5 JP2010155920A JP2010155920A JP2012019092A5 JP 2012019092 A5 JP2012019092 A5 JP 2012019092A5 JP 2010155920 A JP2010155920 A JP 2010155920A JP 2010155920 A JP2010155920 A JP 2010155920A JP 2012019092 A5 JP2012019092 A5 JP 2012019092A5
- Authority
- JP
- Japan
- Prior art keywords
- element isolation
- semiconductor film
- isolation region
- electronic
- electronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000012212 insulator Substances 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 claims 30
- 239000010409 thin film Substances 0.000 claims 2
- 210000002858 crystal cell Anatomy 0.000 claims 1
- 238000005401 electroluminescence Methods 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 description 2
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010155920A JP5676945B2 (ja) | 2010-07-08 | 2010-07-08 | 電子装置、電子装置の素子分離方法、電子装置の製造方法、及び電子装置を備えた表示装置 |
| US13/161,328 US8525175B2 (en) | 2010-07-08 | 2011-06-15 | Electronic device having an isolating element and display apparatus including the electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010155920A JP5676945B2 (ja) | 2010-07-08 | 2010-07-08 | 電子装置、電子装置の素子分離方法、電子装置の製造方法、及び電子装置を備えた表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012019092A JP2012019092A (ja) | 2012-01-26 |
| JP2012019092A5 true JP2012019092A5 (enExample) | 2013-08-22 |
| JP5676945B2 JP5676945B2 (ja) | 2015-02-25 |
Family
ID=45437952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010155920A Active JP5676945B2 (ja) | 2010-07-08 | 2010-07-08 | 電子装置、電子装置の素子分離方法、電子装置の製造方法、及び電子装置を備えた表示装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8525175B2 (enExample) |
| JP (1) | JP5676945B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8981367B2 (en) * | 2011-12-01 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10002968B2 (en) | 2011-12-14 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
| US9099560B2 (en) * | 2012-01-20 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2014192264A (ja) * | 2013-03-26 | 2014-10-06 | Nippon Hoso Kyokai <Nhk> | 薄膜トランジスタの製造方法 |
| JP6190228B2 (ja) * | 2013-09-24 | 2017-08-30 | 株式会社東芝 | 半導体装置及び撮像装置 |
| CN103762223A (zh) * | 2013-12-31 | 2014-04-30 | 深圳市华星光电技术有限公司 | 一种具有氧化物薄膜电晶体的发光装置及其制造方法 |
| US10411013B2 (en) * | 2016-01-22 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| KR102884851B1 (ko) | 2019-05-28 | 2025-11-14 | 삼성디스플레이 주식회사 | 지문 센서 및 이를 포함하는 표시 장치 |
| US11856751B2 (en) * | 2021-03-12 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company Limited | Drain sharing for memory cell thin film access transistors and methods for forming the same |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3856165T2 (de) | 1987-01-29 | 1998-08-27 | Canon Kk | Photovoltaischer Wandler |
| US4942600A (en) | 1988-03-07 | 1990-07-17 | Canon Kabushiki Kaisha | Communication apparatus for generating a call signal from a telephone set to a data terminal |
| US5138655A (en) | 1990-02-17 | 1992-08-11 | Canon Kabushiki Kaisha | Telephone apparatus capable of setting card unit therein |
| DE69121939T2 (de) | 1990-02-23 | 1997-02-27 | Canon Kk | Fernsprechvermittlungsanlage und -verfahren |
| EP0488173A3 (en) | 1990-11-27 | 1993-04-28 | Canon Kabushiki Kaisha | Wireless communication channel selecting method |
| EP0493991B1 (en) | 1990-12-04 | 2004-03-10 | Canon Kabushiki Kaisha | Speech control apparatus |
| JP3263135B2 (ja) | 1992-06-30 | 2002-03-04 | キヤノン株式会社 | 情報処理装置 |
| JP3096831B2 (ja) | 1993-03-19 | 2000-10-10 | セイコーインスツルメンツ株式会社 | 半導体装置 |
| JPH084131A (ja) | 1994-06-16 | 1996-01-09 | Asahi Chem Ind Co Ltd | 押出成形版用耐火防水目地材 |
| US5884077A (en) | 1994-08-31 | 1999-03-16 | Canon Kabushiki Kaisha | Information processing system and method in which computer with high load borrows processor of computer with low load to execute process |
| JP3334027B2 (ja) | 1996-02-06 | 2002-10-15 | 富士電機株式会社 | 高耐圧横型半導体装置 |
| JPH11317506A (ja) * | 1998-05-01 | 1999-11-16 | Nippon Steel Corp | 半導体装置及びその製造方法 |
| JP2000223701A (ja) * | 1999-01-28 | 2000-08-11 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2000323484A (ja) * | 1999-05-07 | 2000-11-24 | Mitsubishi Electric Corp | 半導体装置及び半導体記憶装置 |
| JP2006114859A (ja) * | 2004-01-21 | 2006-04-27 | Seiko Epson Corp | アライメント方法、薄膜形成基板の製造方法、半導体装置の製造方法、及び電子機器の製造方法 |
| JP2005072610A (ja) * | 2004-10-01 | 2005-03-17 | Renesas Technology Corp | 半導体装置 |
| JP4450719B2 (ja) * | 2004-10-22 | 2010-04-14 | 株式会社神戸製鋼所 | 半導体素子の製造方法 |
| US7402506B2 (en) * | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| JP4916152B2 (ja) | 2005-10-07 | 2012-04-11 | トヨタ自動車株式会社 | 半導体装置 |
| JP2007109918A (ja) * | 2005-10-14 | 2007-04-26 | Toppan Printing Co Ltd | トランジスタおよびその製造方法 |
| JP2007220713A (ja) | 2006-02-14 | 2007-08-30 | Toppan Printing Co Ltd | 薄膜トランジスタ |
| JP5196870B2 (ja) * | 2007-05-23 | 2013-05-15 | キヤノン株式会社 | 酸化物半導体を用いた電子素子及びその製造方法 |
| JP5566000B2 (ja) | 2007-03-12 | 2014-08-06 | キヤノン株式会社 | 発光表示装置の駆動回路、その駆動方法並びにカメラ |
| JP5525778B2 (ja) * | 2008-08-08 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2011034012A1 (en) * | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, light emitting device, semiconductor device, and electronic device |
| JP5473643B2 (ja) | 2010-02-04 | 2014-04-16 | キヤノン株式会社 | 電源装置及びそれを使用する画像形成装置 |
| US8513106B2 (en) * | 2010-12-09 | 2013-08-20 | International Business Machines Corporation | Pseudo butted junction structure for back plane connection |
-
2010
- 2010-07-08 JP JP2010155920A patent/JP5676945B2/ja active Active
-
2011
- 2011-06-15 US US13/161,328 patent/US8525175B2/en active Active
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