JP5676945B2 - 電子装置、電子装置の素子分離方法、電子装置の製造方法、及び電子装置を備えた表示装置 - Google Patents

電子装置、電子装置の素子分離方法、電子装置の製造方法、及び電子装置を備えた表示装置 Download PDF

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JP5676945B2
JP5676945B2 JP2010155920A JP2010155920A JP5676945B2 JP 5676945 B2 JP5676945 B2 JP 5676945B2 JP 2010155920 A JP2010155920 A JP 2010155920A JP 2010155920 A JP2010155920 A JP 2010155920A JP 5676945 B2 JP5676945 B2 JP 5676945B2
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semiconductor film
element isolation
electronic device
oxide semiconductor
electronic
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Japanese (ja)
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JP2012019092A5 (enExample
JP2012019092A (ja
Inventor
翔 鈴木
翔 鈴木
安部　勝美
勝美 安部
林　享
享 林
日出也 雲見
日出也 雲見
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Canon Inc
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Canon Inc
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Priority to JP2010155920A priority Critical patent/JP5676945B2/ja
Priority to US13/161,328 priority patent/US8525175B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Element Separation (AREA)
JP2010155920A 2010-07-08 2010-07-08 電子装置、電子装置の素子分離方法、電子装置の製造方法、及び電子装置を備えた表示装置 Active JP5676945B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010155920A JP5676945B2 (ja) 2010-07-08 2010-07-08 電子装置、電子装置の素子分離方法、電子装置の製造方法、及び電子装置を備えた表示装置
US13/161,328 US8525175B2 (en) 2010-07-08 2011-06-15 Electronic device having an isolating element and display apparatus including the electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010155920A JP5676945B2 (ja) 2010-07-08 2010-07-08 電子装置、電子装置の素子分離方法、電子装置の製造方法、及び電子装置を備えた表示装置

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JP2012019092A JP2012019092A (ja) 2012-01-26
JP2012019092A5 JP2012019092A5 (enExample) 2013-08-22
JP5676945B2 true JP5676945B2 (ja) 2015-02-25

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US (1) US8525175B2 (enExample)
JP (1) JP5676945B2 (enExample)

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US8981367B2 (en) * 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US9099560B2 (en) * 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2014192264A (ja) * 2013-03-26 2014-10-06 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタの製造方法
JP6190228B2 (ja) * 2013-09-24 2017-08-30 株式会社東芝 半導体装置及び撮像装置
CN103762223A (zh) * 2013-12-31 2014-04-30 深圳市华星光电技术有限公司 一种具有氧化物薄膜电晶体的发光装置及其制造方法
US10411013B2 (en) * 2016-01-22 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
KR102884851B1 (ko) 2019-05-28 2025-11-14 삼성디스플레이 주식회사 지문 센서 및 이를 포함하는 표시 장치
US11856751B2 (en) * 2021-03-12 2023-12-26 Taiwan Semiconductor Manufacturing Company Limited Drain sharing for memory cell thin film access transistors and methods for forming the same

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US4942600A (en) 1988-03-07 1990-07-17 Canon Kabushiki Kaisha Communication apparatus for generating a call signal from a telephone set to a data terminal
US5138655A (en) 1990-02-17 1992-08-11 Canon Kabushiki Kaisha Telephone apparatus capable of setting card unit therein
DE69121939T2 (de) 1990-02-23 1997-02-27 Canon Kk Fernsprechvermittlungsanlage und -verfahren
EP0488173A3 (en) 1990-11-27 1993-04-28 Canon Kabushiki Kaisha Wireless communication channel selecting method
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JP3096831B2 (ja) 1993-03-19 2000-10-10 セイコーインスツルメンツ株式会社 半導体装置
JPH084131A (ja) 1994-06-16 1996-01-09 Asahi Chem Ind Co Ltd 押出成形版用耐火防水目地材
US5884077A (en) 1994-08-31 1999-03-16 Canon Kabushiki Kaisha Information processing system and method in which computer with high load borrows processor of computer with low load to execute process
JP3334027B2 (ja) 1996-02-06 2002-10-15 富士電機株式会社 高耐圧横型半導体装置
JPH11317506A (ja) * 1998-05-01 1999-11-16 Nippon Steel Corp 半導体装置及びその製造方法
JP2000223701A (ja) * 1999-01-28 2000-08-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
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JP2005072610A (ja) * 2004-10-01 2005-03-17 Renesas Technology Corp 半導体装置
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JP2007109918A (ja) * 2005-10-14 2007-04-26 Toppan Printing Co Ltd トランジスタおよびその製造方法
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JP5196870B2 (ja) * 2007-05-23 2013-05-15 キヤノン株式会社 酸化物半導体を用いた電子素子及びその製造方法
JP5566000B2 (ja) 2007-03-12 2014-08-06 キヤノン株式会社 発光表示装置の駆動回路、その駆動方法並びにカメラ
JP5525778B2 (ja) * 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 半導体装置
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JP5473643B2 (ja) 2010-02-04 2014-04-16 キヤノン株式会社 電源装置及びそれを使用する画像形成装置
US8513106B2 (en) * 2010-12-09 2013-08-20 International Business Machines Corporation Pseudo butted junction structure for back plane connection

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US8525175B2 (en) 2013-09-03
JP2012019092A (ja) 2012-01-26
US20120007085A1 (en) 2012-01-12

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