JP2014204122A5 - - Google Patents

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Publication number
JP2014204122A5
JP2014204122A5 JP2014059698A JP2014059698A JP2014204122A5 JP 2014204122 A5 JP2014204122 A5 JP 2014204122A5 JP 2014059698 A JP2014059698 A JP 2014059698A JP 2014059698 A JP2014059698 A JP 2014059698A JP 2014204122 A5 JP2014204122 A5 JP 2014204122A5
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JP
Japan
Prior art keywords
field effect
effect transistor
graphene oxide
layer
transistor device
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JP2014059698A
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English (en)
Japanese (ja)
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JP6192577B2 (ja
JP2014204122A (ja
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Priority claimed from EP13162837.2A external-priority patent/EP2790227B1/en
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Publication of JP2014204122A publication Critical patent/JP2014204122A/ja
Publication of JP2014204122A5 publication Critical patent/JP2014204122A5/ja
Application granted granted Critical
Publication of JP6192577B2 publication Critical patent/JP6192577B2/ja
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JP2014059698A 2013-04-09 2014-03-24 グラフェン系の電界効果トランジスタ Active JP6192577B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13162837.2A EP2790227B1 (en) 2013-04-09 2013-04-09 Graphene based field effect transistor
EP13162837.2 2013-04-09

Publications (3)

Publication Number Publication Date
JP2014204122A JP2014204122A (ja) 2014-10-27
JP2014204122A5 true JP2014204122A5 (enExample) 2017-04-27
JP6192577B2 JP6192577B2 (ja) 2017-09-06

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ID=48045355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014059698A Active JP6192577B2 (ja) 2013-04-09 2014-03-24 グラフェン系の電界効果トランジスタ

Country Status (3)

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US (1) US9184270B2 (enExample)
EP (1) EP2790227B1 (enExample)
JP (1) JP6192577B2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
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EP2790227B1 (en) * 2013-04-09 2019-06-05 IMEC vzw Graphene based field effect transistor
US9583358B2 (en) 2014-05-30 2017-02-28 Samsung Electronics Co., Ltd. Hardmask composition and method of forming pattern by using the hardmask composition
KR102214833B1 (ko) * 2014-06-17 2021-02-10 삼성전자주식회사 그래핀과 양자점을 포함하는 전자 소자
KR102287343B1 (ko) 2014-07-04 2021-08-06 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
KR102287344B1 (ko) 2014-07-25 2021-08-06 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
KR102384226B1 (ko) 2015-03-24 2022-04-07 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴 형성방법
KR102463893B1 (ko) 2015-04-03 2022-11-04 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
US10217819B2 (en) * 2015-05-20 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor device including metal-2 dimensional material-semiconductor contact
KR101772675B1 (ko) * 2015-06-19 2017-08-29 성균관대학교산학협력단 N-도핑된 그래핀 옥사이드/그래핀의 이중층 구조체 및 이의 제조 방법
US10139287B2 (en) * 2015-10-15 2018-11-27 Raytheon Company In-situ thin film based temperature sensing for high temperature uniformity and high rate of temperature change thermal reference sources
CN105261654B (zh) 2015-11-05 2018-12-28 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及制作方法、阵列基板、显示面板
JP6666168B2 (ja) * 2016-02-26 2020-03-13 住友電気工業株式会社 電子装置およびその製造方法
US11222959B1 (en) * 2016-05-20 2022-01-11 Hrl Laboratories, Llc Metal oxide semiconductor field effect transistor and method of manufacturing same
US9991122B2 (en) * 2016-08-31 2018-06-05 Micron Technology, Inc. Methods of forming semiconductor device structures including two-dimensional material structures
KR102027131B1 (ko) * 2016-12-26 2019-10-01 한국세라믹기술원 판상 세라믹-flg 복합체의 제조방법
KR101939450B1 (ko) * 2016-12-27 2019-01-16 울산과학기술원 그래핀 상 금속산화물층의 형성방법, 그에 의해 제조된 그래핀 상 금속산화물층 및 그래핀 상 금속산화물층을 포함하는 전자소자
WO2018173347A1 (ja) * 2017-03-22 2018-09-27 三菱電機株式会社 電磁波検出器、電磁波検出器アレイおよび電磁波検出方法
CN110506325A (zh) * 2017-04-28 2019-11-26 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
US11034847B2 (en) 2017-07-14 2021-06-15 Samsung Electronics Co., Ltd. Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition
CN107492502B (zh) * 2017-07-26 2020-08-21 山东理工大学 利用苯系蒸汽对石墨烯表面处理的方法及应用
KR102433666B1 (ko) 2017-07-27 2022-08-18 삼성전자주식회사 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크
KR102486388B1 (ko) 2017-07-28 2023-01-09 삼성전자주식회사 그래핀 양자점의 제조방법, 상기 제조방법에 따라 얻어진 그래핀 양자점을 포함한 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크
KR102014132B1 (ko) * 2017-11-28 2019-08-26 광운대학교 산학협력단 고성능 ｉｇｚｏ ｔｆｔ를 위한 저온 용액 공정 기반의 고품질 ａｌ２ｏ３ ｂｎ 절연막 제조 방법 및 그 ｉｇｚｏ ｔｆｔ
JP7610103B2 (ja) * 2021-01-28 2025-01-08 富士通株式会社 電子装置、電子装置の製造方法及び電子機器
EP4484942A1 (de) 2023-06-30 2025-01-01 AMO GmbH Verfahren zur herstellung eines feldeffekttransistors mit einer gewünschten schwellenspannung
DE102023122775A1 (de) 2023-06-30 2025-01-02 Gesellschaft für angewandte Mikro- und Optoelektronik mit beschränkter Haftung - AMO GmbH Verfahren zur Herstellung eines Feldeffekttransistors mit einer gewünschten Schwellenspannung
DE202023104831U1 (de) 2023-06-30 2023-10-31 Gesellschaft für angewandte Mikro- und Optoelektronik mit beschränkter Haftung - AMO GmbH Feldeffekttransistor sowie Vorrichtung zur Herstellung eines Feldeffekttransistors mit einer gewünschten Schwellenspannung
CN119020748B (zh) * 2024-07-19 2025-09-26 中国船舶集团有限公司第七〇七研究所 基于石墨烯镀膜的高品质原子束流发射结构的制备方法
CN120328546A (zh) * 2025-06-20 2025-07-18 中北大学 一种双层及少层石墨烯薄膜堆叠的制备方法、转移方法以及石墨烯复合结构

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US8101474B2 (en) 2010-01-06 2012-01-24 International Business Machines Corporation Structure and method of forming buried-channel graphene field effect device
JP2011192667A (ja) * 2010-03-11 2011-09-29 Toshiba Corp トランジスタおよびその製造方法
US8685802B2 (en) * 2010-12-29 2014-04-01 Universityof North Texas Graphene formation on dielectrics and electronic devices formed therefrom
US20120276718A1 (en) 2011-04-27 2012-11-01 Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Method of fabricating graphene-based field effect transistor
KR101878732B1 (ko) * 2011-06-24 2018-07-16 삼성전자주식회사 그래핀 기재 및 이를 채용한 투명전극과 트랜지스터
US9748340B2 (en) * 2012-03-22 2017-08-29 Quantum Devices, Llc Graphene field effect transistor
KR101919424B1 (ko) * 2012-07-23 2018-11-19 삼성전자주식회사 트랜지스터 및 그 제조방법
EP2790227B1 (en) * 2013-04-09 2019-06-05 IMEC vzw Graphene based field effect transistor

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