CN105261654B - 低温多晶硅薄膜晶体管及制作方法、阵列基板、显示面板 - Google Patents
低温多晶硅薄膜晶体管及制作方法、阵列基板、显示面板 Download PDFInfo
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- CN105261654B CN105261654B CN201510743470.1A CN201510743470A CN105261654B CN 105261654 B CN105261654 B CN 105261654B CN 201510743470 A CN201510743470 A CN 201510743470A CN 105261654 B CN105261654 B CN 105261654B
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Abstract
本公开涉及显示技术领域,并公开一种低温多晶硅薄膜晶体管及制作方法、阵列基板、显示面板。该低温多晶硅薄膜晶体管包括:包括设置在衬底上的有源层、源极、漏极、栅极、位于所述有源层和所述栅极之间的栅极绝缘层、以及设置在所述有源层和所述栅极绝缘层之间的氧化石墨烯层。通过在有源层和栅极绝缘层之间设置氧化石墨烯层,降低多晶硅有源层和栅极绝缘层之间界面粗糙度和界面缺陷态密度,并且不需要进行栅极绝缘层预清洗工艺。还公开了该多晶硅薄膜晶体管的制作方法、阵列基板和显示面板。
Description
技术领域
本公开涉及显示技术领域,并且具体而言涉及一种低温多晶硅(low temperaturepolysilicon, LTPS)薄膜晶体管(thin film transistor, TFT)及制作方法、阵列基板、显示面板。
背景技术
LTPS TFT液晶显示器(liquid crystal display, LCD)有别于传统的非晶硅(a-Si) TFT-LCD。传统非晶硅材料的电子迁移率仅仅为0.5cm2/V.sec,而低温多晶硅的电子迁移率可以达到50~200cm2/V.sec。因此与传统非晶硅TFT-LCD相比,低温多晶硅TFT-LCD具有更高解析度、更快反应速度、更大开口率(aperture ratio)、更高亮度等优点。另外,较高的电子迁移率使得可以将周边驱动电路集成在玻璃衬底上,实现玻璃上集成系统(SOG),从而节省空间和成本。
在现有低温多晶硅工艺中,多晶硅(polysilicon, P-Si)有源层与栅极绝缘层(gate insulating layer, GI)之间界面的处理通常采用栅极绝缘层预清洗(Pre-GIClean)工艺。即,在形成栅极绝缘层之前,对多晶硅有源层表面进行预清洗。这种预清洗工艺只能在一定程度上改善有源层和栅极绝缘层之间界面的粗糙度以及降低界面态缺陷密度。再者,不同规格的产品需要进行的预清洗工艺也不尽相同,从而提升了工艺复杂性与时间成本。
因此,本领域中存在对改进的低温多晶硅薄膜晶体管及其制作方法的需求。
发明内容
本公开的目的在于减轻或解决前文所提到的问题的一个或多个。具体而言,本公开的低温多晶硅薄膜晶体管及制作方法、阵列基板、显示面板通过在有源层和栅极绝缘层之间设置氧化石墨烯(graphene oxide)层,解决了多晶硅有源层和栅极绝缘层之间界面粗糙度和界面缺陷态密度的问题。
在第一方面,提供了一种低温多晶硅薄膜晶体管,包括设置在衬底上的有源层、源极、漏极、栅极以及位于所述有源层和所述栅极之间的栅极绝缘层,所述低温多晶硅薄膜晶体管还包括设置在所述有源层和所述栅极绝缘层之间的氧化石墨烯层。
根据此实施例,在多晶硅有源层和栅极绝缘层之间增加了氧化石墨烯层。氧化石墨烯是碳原子以sp2杂化轨道组成六角型呈蜂巢晶格的平面层结构,其离子迁移率较高且具有共轭π键电子云分布。与多晶硅相比,氧化石墨烯具有更小的分子结构,使得可以进一步降低多晶硅有源层和栅极绝缘层之间界面粗糙度和界面缺陷态密度,从而提高低温多晶硅薄膜晶体管的特性。由于该氧化石墨烯层的应用,该低温多晶硅薄膜晶体管在制作过程中不需要进行栅极绝缘层预清洗工艺,从而简化制作工艺并且降低成本。
在优选实施例中,所述氧化石墨烯层的厚度可以为10-20nm。
根据此实施例,氧化石墨烯层可以具有10-20nm的厚度,从而提供平整表面。优选地,氧化石墨烯层的厚度可以为10nm。
在优选实施例中,所述低温多晶硅薄膜晶体管还可以包括形成在所述衬底上的缓冲层。
根据此实施例,通过在衬底和薄膜晶体管的有源层(当薄膜晶体管为顶栅结构时)或栅极(当薄膜晶体管为底栅结构时)之间设置缓冲层,可以提高待形成的有源层或栅极与衬底之间的附着程度。该缓冲层可以将衬底与有源层隔绝,避免衬底中杂质进入有源层,影响薄膜晶体管的性能。此外,在利用准分子激光退火将非晶硅转变为多晶硅以形成有源层时,该缓冲层还可以减小多晶硅和衬底之间的热扩散,降低退火时温度上升对衬底的影响。
在优选实施例中,所述缓冲层可以由氧化硅、氮化硅或氮氧化硅形成。所述缓冲层的厚度可以为50-300nm。优选地,所述缓冲层可以由氧化硅形成并且厚度可以为50-100nm。可替换地,所述缓冲层可以由氮化硅形成并且厚度可以为100-300nm。
根据此实施例,通过在衬底上形成具有上述厚度的缓冲层,不仅可以有效地隔绝来自衬底中的杂质,并且可以在激光退火时为衬底提供保护。
在优选实施例中,所述有源层可以设置在所述缓冲层上;所述低温多晶硅薄膜晶体管还可以包括设置在所述栅极上的层间电介质层(interlayer dielectric layer,ILD);以及所述源极和所述漏极可以分别通过贯穿所述氧化石墨烯层、所述栅极绝缘层和所述层间电介质层的过孔连接到所述有源层。
根据此实施例,该低温多晶硅薄膜晶体管可以是顶栅型。也就是说,该低温多晶硅薄膜晶体管包括衬底、形成于衬底上的有源层和氧化石墨烯层的叠层、覆盖该衬底和该叠层的栅极绝缘层、形成于该栅极绝缘层上并且位于该叠层上方的栅极、覆盖该栅极和该栅极绝缘层的层间电介质层、以及形成于该层间电介质层上并且电连接到该有源层的源极和漏极。在顶栅型薄膜晶体管中,有源层直接形成于衬底(或缓冲层)上,由于衬底的表面非常平整,使得形成于衬底(或缓冲层上)上的有源层的表面也比较平整。这有利于降低有源层和栅极绝缘层之间界面的粗糙度,有利于提高低温多晶硅薄膜晶体管的性能。
在优选实施例中,所述栅极可以设置在所述缓冲层上;所述低温多晶硅薄膜晶体管还可以包括设置在所述有源层上的层间电介质层;以及所述源极和所述漏极可以分别通过贯穿所述层间电介质层的过孔连接到所述有源层。
根据此实施例,该低温多晶硅薄膜晶体管可以是底栅型。也就是说,该低温多晶硅薄膜晶体管包括衬底、形成于衬底上的栅极、覆盖该衬底和该栅极的栅极绝缘层、形成于该栅极绝缘层上的氧化石墨烯层和有源层的叠层、覆盖该栅极绝缘层和该叠层的层间电介质层、以及形成于该层间电介质层上并且电连接到该有源层的源极和漏极。在底栅型薄膜晶体管中,栅极和栅极绝缘层可以充当有源层的光学保护层,防止背光源发出的光照射到有源层所产生的光生载流子而破坏有源层的电学特性,进而影响薄膜晶体管的性能。
在优选实施例中,所述有源层可以包括掺杂的源极接触区和漏极接触区;所述源极设置在所述源极接触区上方并且连接到所述源极接触区;以及所述漏极设置在所述漏极接触区上方并且连接到所述漏极接触区。
根据此实施例,例如通过掺杂,在有源层的将与源极和漏极连接的部分形成源极接触区和漏极接触区。这有利于实现源极和漏极与有源层之间的欧姆接触,从而提高低温多晶硅薄膜晶体管的性能。
在第二方面,本公开提供了一种阵列基板,包括如上文所述的低温多晶硅薄膜晶体管,覆盖所述低温多晶硅薄膜晶体管的平坦化层,以及像素电极,其中所述像素电极通过贯穿所述平坦化层的过孔连接到所述低温多晶体管薄膜晶体管的所述漏极。
根据本公开的阵列基板具有与上文所述的低温多晶硅薄膜晶体管相同或相似的益处,此处不再赘述。
在第三方面,本公开提供了一种显示面板,包括如上文所述的阵列基板。
根据本公开的显示面板具有与上文所述的低温多晶硅薄膜晶体管相同或相似的益处,此处不再赘述。
在第四方面,本公开提供了一种低温多晶硅薄膜晶体管的制作方法,包括在衬底上形成有源层、源极、漏极、栅极以及位于所述有源层和所述栅极之间的栅极绝缘层,所述方法还包括在所述有源层和所述栅极绝缘层之间形成氧化石墨烯层。
根据此实施例,在多晶硅有源层和栅极绝缘层之间增加了氧化石墨烯层。氧化石墨烯是碳原子以sp2杂化轨道组成六角型呈蜂巢晶格的平面层结构,其离子迁移率较高且具有共轭π键电子云分布。与多晶硅相比,氧化石墨烯具有更小的分子结构,使得可以进一步降低多晶硅有源层和栅极绝缘层之间界面粗糙度和界面缺陷态密度,从而提高低温多晶硅薄膜晶体管的特性。由于该氧化石墨烯层的应用,该低温多晶硅薄膜晶体管在制作过程中不需要进行栅极绝缘层预清洗工艺,从而简化制作工艺并且降低成本。
在优选实施例中,形成氧化石墨烯层可以包括:制备氧化石墨烯溶液;在所述有源层或所述栅极绝缘层上旋涂所述氧化石墨烯溶液;以及烘干所述氧化石墨烯溶液以形成所述氧化石墨烯层。
根据此实施例,通过简单且成本高效的旋涂和烘干,即可形成氧化石墨烯层。
在优选实施例中,制备氧化石墨烯溶液可以包括:利用石墨通过氧化剂氧化制备氧化石墨烯;以及将所述氧化石墨烯分散在溶剂中以制备所述氧化石墨烯溶液。
根据此实施例,制备前驱体溶液,从而可以利用简单且成本高效的旋涂工艺来形成氧化石墨烯层。
在优选实施例中,所述氧化剂可以是高锰酸钾和浓硫酸的混合液。
在优选实施例中,所述溶剂可以是体积百分比为10%的乙醇水溶液。
在优选实施例中,所述方法还可以包括:在烘干所述氧化石墨烯溶液以形成所述氧化石墨烯层之后,对所述氧化石墨烯层进行化学机械抛光(chemical mechanicalpolishing, CMP)。
根据此实施例,旋涂烘干后,对氧化石墨烯层进行化学机械抛光,进一步提高氧化石墨烯层的表面平整度。这有利于进一步改善有源层和栅极绝缘层之间界面粗糙度并且降低界面态缺陷密度。
此外,根据本公开的低温多晶硅薄膜晶体管的制作方法具有与上文所述的低温多晶硅薄膜晶体管相同或相似的益处,此处不再赘述。
根据本公开,通过在多晶硅有源层和栅极绝缘层之间增加了氧化石墨烯层。氧化石墨烯是碳原子以sp2杂化轨道组成六角型呈蜂巢晶格的平面层结构,其离子迁移率较高且具有共轭π键电子云分布。与多晶硅相比,氧化石墨烯具有更小的分子结构,使得可以进一步降低多晶硅有源层和栅极绝缘层之间界面粗糙度和界面缺陷态密度,从而提高低温多晶硅薄膜晶体管的特性。由于该氧化石墨烯层的应用,该低温多晶硅薄膜晶体管在制作过程中不需要进行栅极绝缘层预清洗工艺,从而简化制作工艺并且降低成本。
附图说明
附图是用来提供对本公开的进一步理解,并且构成说明书的一部分,与下文的具体实施方式一起用于解释本公开,但并不构成对本公开的限制。在附图中:
图1为本公开一实施例中低温多晶硅薄膜晶体管的结构示意图;
图2为本公开一实施例中低温多晶硅薄膜晶体管的结构示意图;
图3为本公开一实施例中低温多晶硅薄膜晶体管的结构示意图;
图4为本公开一实施例中阵列基板的结构示意图;
图5为本公开一实施例中阵列基板的结构示意图;
图6为本公开一实施例中低温多晶硅薄膜晶体管的制作方法的流程示意图;以及
图7A、7B、7C、7D、7E、7F、7G、7H、7I、7J、7K、7L、7M、7N为本公开一实施例中低温多晶硅薄膜晶体管在各个工艺阶段的结构示意图。
具体实施方式
下面结合附图,对本公开的低温多晶硅薄膜晶体管及制作方法、阵列基板、显示面板通过的具体实施方式进行详细地说明。本公开的附图示意性地绘示出与发明点有关的结构、部分和/或步骤,而没有绘示或者仅仅部分地绘示与发明点无关的结构、部分和/或步骤。附图中各膜层的厚度和形状不反映真实比例,目的只是示意说明本公开的内容。
附图中示出的部件标注如下:
100、200 衬底;
102、202 缓冲层;
104、210 有源层;
104S 源极接触区;
104D 漏极接触区;
106、208 氧化石墨烯层;
108、206 栅极绝缘层;
110、204 栅极;
112、212 层间电介质层;
114 过孔;
116 源/漏电极层;
118、214 源电极;
120、216 漏电极;
122、218 平坦化层;
124、220 像素电极;
151、152、153、154 光致抗蚀剂层。
根据本公开的第一方面,提供一种低温多晶硅薄膜晶体管。如图1所示,该低温多晶硅薄膜晶体管包括设置在衬底100上的有源层104、源极118、漏极120、栅极110以及位于有源层104和栅极110之间的栅极绝缘层108。根据本公开,该低温多晶硅薄膜晶体管还包括设置在有源层104和栅极绝缘层108之间的氧化石墨烯层106。
在本公开的低温多晶硅薄膜晶体管中,多晶硅有源层和栅极绝缘层之间设置有氧化石墨烯层。氧化石墨烯是碳原子以sp2杂化轨道组成六角型呈蜂巢晶格的平面层结构,其离子迁移率较高且具有共轭π键电子云分布。与多晶硅相比,氧化石墨烯具有更小的分子结构,使得可以进一步降低多晶硅有源层和栅极绝缘层之间界面粗糙度和界面缺陷态密度,从而提高低温多晶硅薄膜晶体管的特性。由于该氧化石墨烯层的应用,该低温多晶硅薄膜晶体管在制作过程中不需要进行栅极绝缘层预清洗工艺,从而简化制作工艺并且降低成本。
优选地,氧化石墨烯层的厚度可以为10-20nm以提供平整表面。更优选地,氧化石墨烯层的厚度可以为10nm。
优选地,该低温多晶硅薄膜晶体管还可以包括形成在衬底100上的缓冲层102,如图2所示。通过在衬底100上设置缓冲层102,可以提高待形成的薄膜晶体管与衬底100之间的附着程度。在图2所示实施例中,该缓冲层102可以将衬底100与薄膜晶体管的有源层104隔绝,避免衬底100中的杂质进入有源层104而影响薄膜晶体管的性能。此外,在利用准分子激光退火将非晶硅转变为多晶硅以形成有源层104时,该缓冲层102还可以减小多晶硅有源层104和衬底100之间的热扩散,降低退火时温度上升对衬底100的影响。
优选地,缓冲层102可以由氧化硅、氮化硅或氮氧化硅形成。缓冲层102的厚度可以为50-300nm。例如,缓冲层102可以由氧化硅形成并且厚度可以为50-100nm。可替换地,缓冲层102可以由氮化硅形成并且厚度可以为100-300nm。通过在衬底上形成具有上述厚度的缓冲层,不仅可以有效地隔绝来自衬底中的杂质,并且可以在激光退火时为衬底提供保护。
优选地,该低温多晶硅薄膜晶体管可以为顶栅型薄膜晶体管。例如,有源层104设置在缓冲层102上。低温多晶硅薄膜晶体管还包括设置在栅极110上的层间电介质层112。源极118和漏极120分别通过贯穿氧化石墨烯层106、栅极绝缘层108和层间电介质层112的过孔连接到有源层104。具体而言,如图1所示,该低温多晶硅薄膜晶体管包括衬底100、形成于衬底上的有源层104和氧化石墨烯层106的叠层、覆盖该衬底100和该叠层的栅极绝缘层108、形成于该栅极绝缘层108上并且位于该叠层上方的栅极110、覆盖该栅极110和该栅极绝缘层108的层间电介质层112、以及形成于该层间电介质层112上并且电连接到有源层104的源极118和漏极120。
在顶栅型薄膜晶体管中,有源层104直接形成于衬底100上,由于衬底100的表面非常平整,使得形成于衬底100上的有源层104的表面也比较平整。这有利于降低有源层104和栅极绝缘层108之间界面的粗糙度,有利于提高低温多晶硅薄膜晶体管的性能。
本公开的构思也可以应用于底栅型薄膜晶体管。也就是说,该低温多晶硅薄膜晶体管可以为底栅型薄膜晶体管。例如,如图3所示,栅极204设置在缓冲层202上。低温多晶硅薄膜晶体管还包括设置在有源层210上的层间电介质层212。源极214和漏极216分别通过贯穿层间电介质层212的过孔连接到有源层210。具体而言,如图所示,该低温多晶硅薄膜晶体管包括衬底200、形成于衬底200上的栅极204、覆盖该衬底200和该栅极204的栅极绝缘层206、形成于该栅极绝缘层206上的氧化石墨烯层208和有源层210的叠层、覆盖该栅极绝缘层206和该叠层的层间电介质层212、以及形成于该层间电介质层212上并且电连接到该有源层210的源极214和漏极216。
在底栅型薄膜晶体管中,栅极204和栅极绝缘层206可以充当有源层210的光学保护层,防止背光源发出的光照射到有源层210所产生的光生载流子而破坏有源层210的电学特性,进而影响薄膜晶体管的性能。
优选地,如图2所示,有源层104可以包括掺杂的源极接触区104S和漏极接触区104D。源极118设置在源极接触区104S上方并且连接到源极接触区104S。漏极120设置在漏极接触区104D上方并且连接到漏极接触区104D。例如通过掺杂,在有源层104的将与源极118和漏极120连接的部分形成源极接触区104S和漏极接触区104D。这有利于实现源极118和漏极120与有源层104之间的欧姆接触,从而提高低温多晶硅薄膜晶体管的性能。
根据本公开的第二方面,提供一种阵列基板。该阵列基板包括如上文所述的低温多晶硅薄膜晶体管,覆盖所述低温多晶硅薄膜晶体管的平坦化层,以及像素电极,其中所述像素电极通过贯穿所述平坦化层的过孔连接到所述低温多晶体管薄膜晶体管的所述漏极。
如图4所示,该阵列基板包括设置在低温多晶体硅薄膜晶体管上的平坦化层122和设置在该平坦化层122上的像素电极124。平坦化层122通常由树脂(resin)或其它绝缘层材料形成,并且设置有露出薄膜晶体管的漏极120的过孔。像素电极124通过该过孔与低温多晶硅薄膜晶体管的漏极12相连。在图4所示的阵列基板中,低温多晶硅薄膜晶体管为顶栅型结构,例如可以为图1或2所示的低温多晶硅薄膜晶体管。
图5示出了底栅型低温多晶硅薄膜晶体管应用其中的阵列基板。该阵列基板包括设置在低温多晶体硅薄膜晶体管上的平坦化层218和设置在该平坦化层218上的像素电极220。平坦化层218设置有露出薄膜晶体管的漏极216的过孔。像素电极220通过该过孔与低温多晶硅薄膜晶体管的漏极216相连。在图5所示的阵列基板中,低温多晶硅薄膜晶体管可以为图3所示的低温多晶硅薄膜晶体管。
根据本公开的阵列基板具有与上文所述的低温多晶硅薄膜晶体管相同或相似的益处,此处不再赘述。
根据本公开的第三方面,提供一种显示面板,其包括如上文所述的阵列基板。
该显示面板可以是有源矩阵液晶显示器(active matrix liquid crystaldisplay, AMLCD)或者有源矩阵有机发光二极管(active matrix organic lightemitting diode, AMOLED)的显示面板。该显示面板可以应用于显示装置,该显示装置可以是任何具有显示功能的产品或部件,例如手机、平板电脑、电视机、显示器、笔记本电脑、数码相框和导航仪。
根据本公开的显示面板具有与上文所述的低温多晶硅薄膜晶体管相同或相似的益处,此处不再赘述。
根据本公开的第四方面,提供一种低温多晶硅薄膜晶体管的制作方法。如图6所示,该方法包括:步骤S100,在衬底上形成有源层、源极、漏极、栅极以及位于所述有源层和所述栅极之间的栅极绝缘层;以及步骤S200,在所述有源层和所述栅极绝缘层之间形成氧化石墨烯层。由于氧化石墨烯具有比多晶硅小的分子结构,使得可以进一步降低多晶硅有源层和栅极绝缘层之间界面粗糙度和界面缺陷态密度,从而提高低温多晶硅薄膜晶体管的特性。此外,该低温多晶硅薄膜晶体管在制作过程中不需要进行栅极绝缘层预清洗工艺,从而简化制作工艺并且降低成本。
优选地,形成氧化石墨烯层可以包括:制备氧化石墨烯溶液;在所述有源层或所述栅极绝缘层上旋涂所述氧化石墨烯溶液;以及烘干所述氧化石墨烯溶液以形成所述氧化石墨烯层。藉此,通过简单且成本高效的旋涂和烘干,即可形成氧化石墨烯层。
优选地,制备氧化石墨烯溶液可以包括:利用石墨通过氧化剂氧化制备氧化石墨烯;以及将所述氧化石墨烯分散在溶剂中以制备所述氧化石墨烯溶液。藉此,制备前驱体溶液,从而可以利用简单且成本高效的旋涂工艺来形成氧化石墨烯层。
优选地,所述氧化剂可以是高锰酸钾和浓硫酸的混合液。优选地,所述溶剂可以是体积百分比为10%的乙醇水溶液。
优选地,所述方法还可以包括:在烘干所述氧化石墨烯溶液以形成所述氧化石墨烯层之后,对所述氧化石墨烯层进行化学机械抛光。藉此,旋涂烘干后,对氧化石墨烯层进行化学机械抛光,进一步提高氧化石墨烯层的表面平整度。这有利于进一步改善有源层和栅极绝缘层之间界面粗糙度并且降低界面态缺陷密度。
在下文中结合图7A-7N描述根据本公开的低温多晶硅薄膜晶体管的制作方法。
对衬底100进行清洗处理。衬底100由玻璃等透明材料构成。利用诸如等离子体增强化学气相沉积(plasma enhanced chemical vapor deposition, PECVD)的镀膜工艺在衬底100上形成有源层前驱体,即非晶硅膜。非晶硅膜的厚度可以为40-50nm。接着将衬底100送入高温炉进行处理,以达到脱氢的目的,即减少非晶硅薄膜中氢的含量。一般,将氢的含量控制在2%以内。然后,对衬底100上的非晶硅膜进行准分子激光退火(excimer laserannealing, ELA)处理,使非晶硅膜转变多晶硅薄膜,由此形成有源层104。接着进行沟道区掺杂(channel doping)。
可选地,在形成非晶硅膜之前,可以在衬底100上形成缓冲层102。缓冲层102由氧化硅、氮化硅、氮氧化硅其中之一或其组合形成。缓冲层102可以是单层,也可以是多层。例如,缓冲层102由氧化硅形成时,厚度可以为50-100nm。缓冲层102由氮化硅形成时,厚度可以为100-300nm。经过上述步骤之后,得到如图7A所示的结构。
接着,制备氧化石墨烯。石墨烯的制备流程如下。以天然鳞片石墨为原材料,利用高锰酸钾与浓硫酸作为氧化剂,将石墨原料放入氧化剂中进行氧化反应。反应时间约为1.5小时,制备得到氧化石墨烯。此处的浓硫酸是指浓度大于等于70%的H2SO4的水溶液,其中浓度定义为H2SO4的水溶液里H2SO4的质量百分比。将得到的氧化石墨烯进行水洗至中性,以体积浓度为10%的乙醇溶液作为溶剂,将氧化石墨烯进行超声波分散,制备得到氧化石墨烯溶液。例如通过旋涂工艺,将氧化石墨烯溶液均匀地应用在有源层104上。然后进行烘干处理,得到氧化石墨烯层106。通过调整溶液的浓度,氧化石墨烯层106的厚度被控制在10nm左右。可选地,在烘干之后,可以对氧化石墨烯层106进行化学机械抛光以提高表面平整度。经过上述步骤之后,得到如图7B所示的结构。
接着,通过第一图案化工艺形成图案化的有源层104和氧化石墨烯层106。在本公开的上下文中,图案化工艺包括光刻胶涂布、掩模、曝光、显影以及刻蚀等工艺。具体而言,在图7B所示结构上涂布光致抗蚀剂,然后通过掩模、曝光和显影形成图案化的光致抗蚀剂层151,如图7C所示。然后,以光致抗蚀剂层151为掩模,对有源层104和氧化石墨烯层106进行刻蚀,并且剥离光致抗蚀剂层151,从而形成图案化的有源层104和氧化石墨烯层106叠层,如图7D所示。
接着,利用诸如PECVD的方式,沉积栅极绝缘层108。该栅极绝缘层108覆盖有源层104和氧化石墨烯层106叠层以及缓冲层102,如图7E所示。
接着,利用诸如溅射(sputtering)的方式,在栅极绝缘层108上沉积栅极金属层110,如图7F所示。
接着,通过第二图案化工艺形成栅极110。具体而言,在图7F所示结构上涂布光致抗蚀剂,然后通过掩模、曝光和显影形成图案化的光致抗蚀剂层152,如图7G所示。然后,以光致抗蚀剂层152为掩模,对栅极金属层110进行刻蚀,并且剥离光致抗蚀剂层152,从而形成栅极110,如图7H所示。
接着,利用诸如PECVD的方式,沉积层间电介质层112,如图7I所示。
在沉积层间电介质层112之后,通过第三图案化工艺形成用于源极和漏极的过孔。具体而言,在图7I所示结构上涂布光致抗蚀剂,然后通过掩模、曝光和显影工艺形成图案化的光致抗蚀剂层153,如图7J所示。然后,以光致抗蚀剂层153为掩模,对层间电介质层112进行刻蚀,形成贯穿氧化石墨烯层106、栅极绝缘层108和层间电介质层112的过孔114。随后剥离光致抗蚀剂层153,得到如图7K所示的结构。
接着,利用诸如溅射(sputtering)的方式,在图7K所示结构上沉积源极/漏极金属层116。该源极/漏极金属层116不仅覆盖层间电介质层112,而且填充前一步骤中形成的用于源极和漏极的过孔,如图7L所示。
接着,通过第四图案化工艺形成源极118和漏极120。具体而言,在图7L所示结构上涂布光致抗蚀剂,然后通过掩模、曝光和显影形成图案化的光致抗蚀剂层154,如图7M所示。然后,以光致抗蚀剂层154为掩模,对源极/漏极金属层116进行刻蚀,并且剥离光致抗蚀剂层154,从而形成源极118和漏极120,如图7N所示。
后续的工艺步骤与常规低温多晶硅薄膜晶体管的制备工艺相同,在此不再详细描述。类似地,对于图3所示的底栅型薄膜晶体管,在形成栅极绝缘层206之后,通过成膜工艺分别形成氧化石墨烯层和有源层,接着通过图案化工艺形成图案化的氧化石墨烯层和有源层叠层。其它工艺步骤可以参照图7A-7N所描述的工艺流程,故在此不再详细描述。
由于本公开提供的低温多晶硅薄膜晶体管,在多晶硅有源层和栅极绝缘层之间增加了氧化石墨烯层,是的可以进一步降低多晶硅有源层和栅极绝缘层之间界面粗糙度和界面缺陷态密度,从而提高低温多晶硅薄膜晶体管的特性。此外,该低温多晶硅薄膜晶体管在制作过程中不需要进行栅极绝缘层预清洗工艺,从而简化制作工艺并且降低成本。
仅仅是出于图示和说明的目的而给出对本公开实施例的前述描述。它们不是旨在穷举或者限制本公开内容。因此,本领域技术人员将容易想到许多调整和变型。例如,本公开的低温多晶硅薄膜晶体管的结构不限于图1-2所示的顶栅机构以及图3所示的底栅结构,只要在栅极绝缘层和有源层之间设置有氧化石墨烯层即可。简而言之,本公开的保护范围由所附权利要求定义。
Claims (16)
1.一种低温多晶硅薄膜晶体管,包括设置在衬底上的有源层、源极、漏极、栅极以及位于所述有源层和所述栅极之间的栅极绝缘层,其特征在于,
所述低温多晶硅薄膜晶体管还包括设置在所述有源层和所述栅极绝缘层之间的氧化石墨烯层,其中所述氧化石墨烯层和所述有源层在所述衬底上的投影重叠,并且所述氧化石墨烯层的厚度为10-20nm。
2.如权利要求1所述的低温多晶硅薄膜晶体管,其特征在于,
所述低温多晶硅薄膜晶体管还包括形成在所述衬底上的缓冲层。
3.如权利要求2所述的低温多晶硅薄膜晶体管,其特征在于,
所述缓冲层由氧化硅、氮化硅或氮氧化硅形成。
4.如权利要求2所述的低温多晶硅薄膜晶体管,其特征在于,
所述缓冲层由氧化硅形成,且厚度为50-100nm。
5.如权利要求2所述的低温多晶硅薄膜晶体管,其特征在于,
所述缓冲层由氮化硅形成,且厚度为100-300nm。
6.如权利要求2所述的低温多晶硅薄膜晶体管,其特征在于,
所述有源层设置在所述缓冲层上;
所述低温多晶硅薄膜晶体管还包括设置在所述栅极上的层间电介质层;以及
所述源极和所述漏极分别通过贯穿所述氧化石墨烯层、所述栅极绝缘层和所述层间电介质层的过孔连接到所述有源层。
7.如权利要求2所述的低温多晶硅薄膜晶体管,其特征在于,
所述栅极设置在所述缓冲层上;
所述低温多晶硅薄膜晶体管还包括设置在所述有源层上的层间电介质层;以及
所述源极和所述漏极分别通过贯穿所述层间电介质层的过孔连接到所述有源层。
8.如权利要求1所述的低温多晶硅薄膜晶体管,其特征在于,
所述有源层包括掺杂的源极接触区和漏极接触区;
所述源极设置在所述源极接触区上方并且连接到所述源极接触区;以及
所述漏极设置在所述漏极接触区上方并且连接到所述漏极接触区。
9.一种阵列基板,其特征在于,包括如权利要求1-8中任意一项所述的低温多晶硅薄膜晶体管,覆盖所述低温多晶硅薄膜晶体管的平坦化层,以及像素电极,
其中所述像素电极通过贯穿所述平坦化层的过孔连接到所述低温多晶体管薄膜晶体管的所述漏极。
10.一种显示面板,其特征在于,包括如权利要求9所述的阵列基板。
11.一种低温多晶硅薄膜晶体管的制作方法,包括在衬底上形成有源层、源极、漏极、栅极以及位于所述有源层和所述栅极之间的栅极绝缘层,其特征在于,
所述方法还包括在所述有源层和所述栅极绝缘层之间形成氧化石墨烯层,其中所述氧化石墨烯层和所述有源层在所述衬底上的投影重叠,并且所述氧化石墨烯层的厚度为10-20nm。
12.如权利要求11所述的方法,其特征在于,
形成氧化石墨烯层包括:
制备氧化石墨烯溶液;
在所述有源层或所述栅极绝缘层上旋涂所述氧化石墨烯溶液;以及
烘干所述氧化石墨烯溶液以形成所述氧化石墨烯层。
13.如权利要求12所述的方法,其特征在于,
制备氧化石墨烯溶液包括:
利用石墨通过氧化剂氧化制备氧化石墨烯;以及
将所述氧化石墨烯分散在溶剂中以制备所述氧化石墨烯溶液。
14.如权利要求13所述的方法,其特征在于,
所述氧化剂是高锰酸钾和浓硫酸的混合液。
15.如权利要求13所述的方法,其特征在于,
所述溶剂是体积百分比为10%的乙醇水溶液。
16.如权利要求12所述的方法,其特征在于,所述方法还包括:
在烘干所述氧化石墨烯溶液以形成所述氧化石墨烯层之后,对所述氧化石墨烯层进行化学机械抛光。
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