JP6192577B2 - グラフェン系の電界効果トランジスタ - Google Patents

グラフェン系の電界効果トランジスタ Download PDF

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Publication number
JP6192577B2
JP6192577B2 JP2014059698A JP2014059698A JP6192577B2 JP 6192577 B2 JP6192577 B2 JP 6192577B2 JP 2014059698 A JP2014059698 A JP 2014059698A JP 2014059698 A JP2014059698 A JP 2014059698A JP 6192577 B2 JP6192577 B2 JP 6192577B2
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Japan
Prior art keywords
graphene
layer
graphene oxide
field effect
effect transistor
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JP2014059698A
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Japanese (ja)
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JP2014204122A5 (enExample
JP2014204122A (ja
Inventor
アミールハサン・ノウルバクシュ
マルク・ヘインス
ステファン・デ・ヘント
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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Publication of JP2014204122A5 publication Critical patent/JP2014204122A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13088—Graphene Nanoribbon Field-Effect Transistor [GNRFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
JP2014059698A 2013-04-09 2014-03-24 グラフェン系の電界効果トランジスタ Active JP6192577B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13162837.2A EP2790227B1 (en) 2013-04-09 2013-04-09 Graphene based field effect transistor
EP13162837.2 2013-04-09

Publications (3)

Publication Number Publication Date
JP2014204122A JP2014204122A (ja) 2014-10-27
JP2014204122A5 JP2014204122A5 (enExample) 2017-04-27
JP6192577B2 true JP6192577B2 (ja) 2017-09-06

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JP2014059698A Active JP6192577B2 (ja) 2013-04-09 2014-03-24 グラフェン系の電界効果トランジスタ

Country Status (3)

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US (1) US9184270B2 (enExample)
EP (1) EP2790227B1 (enExample)
JP (1) JP6192577B2 (enExample)

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EP2790227B1 (en) * 2013-04-09 2019-06-05 IMEC vzw Graphene based field effect transistor
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KR102287343B1 (ko) 2014-07-04 2021-08-06 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
KR102287344B1 (ko) 2014-07-25 2021-08-06 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
KR102384226B1 (ko) 2015-03-24 2022-04-07 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴 형성방법
KR102463893B1 (ko) 2015-04-03 2022-11-04 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
US10217819B2 (en) * 2015-05-20 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor device including metal-2 dimensional material-semiconductor contact
KR101772675B1 (ko) * 2015-06-19 2017-08-29 성균관대학교산학협력단 N-도핑된 그래핀 옥사이드/그래핀의 이중층 구조체 및 이의 제조 방법
US10139287B2 (en) * 2015-10-15 2018-11-27 Raytheon Company In-situ thin film based temperature sensing for high temperature uniformity and high rate of temperature change thermal reference sources
CN105261654B (zh) 2015-11-05 2018-12-28 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及制作方法、阵列基板、显示面板
JP6666168B2 (ja) * 2016-02-26 2020-03-13 住友電気工業株式会社 電子装置およびその製造方法
US11222959B1 (en) * 2016-05-20 2022-01-11 Hrl Laboratories, Llc Metal oxide semiconductor field effect transistor and method of manufacturing same
US9991122B2 (en) * 2016-08-31 2018-06-05 Micron Technology, Inc. Methods of forming semiconductor device structures including two-dimensional material structures
KR102027131B1 (ko) * 2016-12-26 2019-10-01 한국세라믹기술원 판상 세라믹-flg 복합체의 제조방법
KR101939450B1 (ko) * 2016-12-27 2019-01-16 울산과학기술원 그래핀 상 금속산화물층의 형성방법, 그에 의해 제조된 그래핀 상 금속산화물층 및 그래핀 상 금속산화물층을 포함하는 전자소자
WO2018173347A1 (ja) * 2017-03-22 2018-09-27 三菱電機株式会社 電磁波検出器、電磁波検出器アレイおよび電磁波検出方法
CN110506325A (zh) * 2017-04-28 2019-11-26 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
US11034847B2 (en) 2017-07-14 2021-06-15 Samsung Electronics Co., Ltd. Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition
CN107492502B (zh) * 2017-07-26 2020-08-21 山东理工大学 利用苯系蒸汽对石墨烯表面处理的方法及应用
KR102433666B1 (ko) 2017-07-27 2022-08-18 삼성전자주식회사 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크
KR102486388B1 (ko) 2017-07-28 2023-01-09 삼성전자주식회사 그래핀 양자점의 제조방법, 상기 제조방법에 따라 얻어진 그래핀 양자점을 포함한 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크
KR102014132B1 (ko) * 2017-11-28 2019-08-26 광운대학교 산학협력단 고성능 ｉｇｚｏ ｔｆｔ를 위한 저온 용액 공정 기반의 고품질 ａｌ２ｏ３ ｂｎ 절연막 제조 방법 및 그 ｉｇｚｏ ｔｆｔ
JP7610103B2 (ja) * 2021-01-28 2025-01-08 富士通株式会社 電子装置、電子装置の製造方法及び電子機器
EP4484942A1 (de) 2023-06-30 2025-01-01 AMO GmbH Verfahren zur herstellung eines feldeffekttransistors mit einer gewünschten schwellenspannung
DE102023122775A1 (de) 2023-06-30 2025-01-02 Gesellschaft für angewandte Mikro- und Optoelektronik mit beschränkter Haftung - AMO GmbH Verfahren zur Herstellung eines Feldeffekttransistors mit einer gewünschten Schwellenspannung
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Also Published As

Publication number Publication date
US9184270B2 (en) 2015-11-10
EP2790227A1 (en) 2014-10-15
US20140299841A1 (en) 2014-10-09
JP2014204122A (ja) 2014-10-27
EP2790227B1 (en) 2019-06-05

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