ID28920A - Metode pembuatan peranti sambungan saluran magnetik - Google Patents
Metode pembuatan peranti sambungan saluran magnetikInfo
- Publication number
- ID28920A ID28920A IDW20010643A ID20010643A ID28920A ID 28920 A ID28920 A ID 28920A ID W20010643 A IDW20010643 A ID W20010643A ID 20010643 A ID20010643 A ID 20010643A ID 28920 A ID28920 A ID 28920A
- Authority
- ID
- Indonesia
- Prior art keywords
- connection
- making
- methods
- magnetic channel
- channel connection
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99202418 | 1999-07-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
ID28920A true ID28920A (id) | 2001-07-12 |
Family
ID=8240484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IDW20010643A ID28920A (id) | 1999-07-22 | 2000-07-17 | Metode pembuatan peranti sambungan saluran magnetik |
Country Status (7)
Country | Link |
---|---|
US (2) | US7001777B1 (id) |
EP (1) | EP1116043B1 (id) |
JP (1) | JP2003505873A (id) |
KR (1) | KR20010079879A (id) |
DE (1) | DE60021343T2 (id) |
ID (1) | ID28920A (id) |
WO (1) | WO2001007926A1 (id) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003078185A (ja) * | 2001-09-03 | 2003-03-14 | Nec Corp | 強磁性トンネル接合構造及びその製造方法並びに該強磁性トンネル接合を用いた磁気メモリ |
JP2005209951A (ja) * | 2004-01-23 | 2005-08-04 | Sony Corp | 磁気メモリ素子及び磁気記憶装置 |
US7186571B2 (en) * | 2004-01-30 | 2007-03-06 | Hewlett-Packard Development Company, L.P. | Method of fabricating a compositionally modulated electrode in a magnetic tunnel junction device |
US7169623B2 (en) * | 2004-09-09 | 2007-01-30 | Tegal Corporation | System and method for processing a wafer including stop-on-aluminum processing |
JP2011054873A (ja) * | 2009-09-04 | 2011-03-17 | Sony Corp | 不揮発性メモリ素子の製造方法 |
JP5836163B2 (ja) | 2012-03-08 | 2015-12-24 | ルネサスエレクトロニクス株式会社 | 磁気メモリセル、磁気メモリセルの製造方法 |
CN106898693A (zh) * | 2015-12-21 | 2017-06-27 | Imec 非营利协会 | 自旋转矩多栅极器件 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3253696B2 (ja) * | 1992-09-11 | 2002-02-04 | 株式会社東芝 | 磁気抵抗効果素子 |
EP0594243A3 (en) * | 1992-10-19 | 1994-09-21 | Philips Electronics Nv | Magnetic field sensor |
JP3635504B2 (ja) * | 1995-08-31 | 2005-04-06 | 富士通株式会社 | 磁気抵抗効果ヘッドとその製造方法及び磁気記録装置 |
WO1997016823A1 (en) * | 1995-10-30 | 1997-05-09 | Philips Electronics N.V. | Magnetic head having a laminated flux guide, and device provided with the magnetic head |
US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
JP3651104B2 (ja) * | 1996-03-29 | 2005-05-25 | ソニー株式会社 | 磁気トンネリング接合素子 |
KR100262282B1 (ko) * | 1996-04-30 | 2000-10-02 | 니시무로 타이죠 | 자기 저항 효과 소자 |
US5820924A (en) * | 1996-05-16 | 1998-10-13 | Honeywell Inc. | Method of fabricating a magnetoresistive sensor |
EP0948788B1 (en) * | 1997-10-29 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Magnetic field sensor comprising a spin-tunnel junction |
US6727105B1 (en) * | 2000-02-28 | 2004-04-27 | Hewlett-Packard Development Company, L.P. | Method of fabricating an MRAM device including spin dependent tunneling junction memory cells |
US6544801B1 (en) * | 2000-08-21 | 2003-04-08 | Motorola, Inc. | Method of fabricating thermally stable MTJ cell and apparatus |
-
2000
- 2000-07-17 DE DE60021343T patent/DE60021343T2/de not_active Expired - Fee Related
- 2000-07-17 ID IDW20010643A patent/ID28920A/id unknown
- 2000-07-17 US US09/787,457 patent/US7001777B1/en not_active Expired - Fee Related
- 2000-07-17 WO PCT/EP2000/006816 patent/WO2001007926A1/en active IP Right Grant
- 2000-07-17 EP EP00956193A patent/EP1116043B1/en not_active Expired - Lifetime
- 2000-07-17 JP JP2001512303A patent/JP2003505873A/ja not_active Withdrawn
- 2000-07-17 KR KR1020017003596A patent/KR20010079879A/ko not_active Application Discontinuation
-
2006
- 2006-01-26 US US11/341,269 patent/US20060128037A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1116043A1 (en) | 2001-07-18 |
EP1116043B1 (en) | 2005-07-20 |
US7001777B1 (en) | 2006-02-21 |
KR20010079879A (ko) | 2001-08-22 |
DE60021343T2 (de) | 2006-05-24 |
WO2001007926A1 (en) | 2001-02-01 |
US20060128037A1 (en) | 2006-06-15 |
JP2003505873A (ja) | 2003-02-12 |
DE60021343D1 (de) | 2005-08-25 |
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