CN102013454B - 非易失性存储器件的制造方法 - Google Patents

非易失性存储器件的制造方法 Download PDF

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Publication number
CN102013454B
CN102013454B CN2010102635449A CN201010263544A CN102013454B CN 102013454 B CN102013454 B CN 102013454B CN 2010102635449 A CN2010102635449 A CN 2010102635449A CN 201010263544 A CN201010263544 A CN 201010263544A CN 102013454 B CN102013454 B CN 102013454B
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layer
memory device
magnetic material
nonvolatile memory
material layer
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CN2010102635449A
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Chinese (zh)
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CN102013454A (zh
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山岸肇
庄子光治
田渕清隆
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CN2010102635449A 2009-09-04 2010-08-26 非易失性存储器件的制造方法 Expired - Fee Related CN102013454B (zh)

Applications Claiming Priority (2)

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JP2009204528A JP2011054873A (ja) 2009-09-04 2009-09-04 不揮発性メモリ素子の製造方法
JP2009-204528 2009-09-04

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CN102013454A CN102013454A (zh) 2011-04-13
CN102013454B true CN102013454B (zh) 2013-10-09

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JP (1) JP2011054873A (enExample)
CN (1) CN102013454B (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP5214691B2 (ja) 2010-09-17 2013-06-19 株式会社東芝 磁気メモリ及びその製造方法
JP5742072B2 (ja) * 2010-10-06 2015-07-01 住友電気工業株式会社 半導体装置およびその製造方法
JP2012089643A (ja) * 2010-10-19 2012-05-10 Sony Corp 記憶装置の製造方法、並びに記憶素子および記憶装置
US20120267733A1 (en) * 2011-04-25 2012-10-25 International Business Machines Corporation Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
JP5768498B2 (ja) 2011-05-23 2015-08-26 ソニー株式会社 記憶素子、記憶装置
US9054295B2 (en) * 2011-08-23 2015-06-09 Micron Technology, Inc. Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials
JP5535161B2 (ja) * 2011-09-20 2014-07-02 株式会社東芝 磁気抵抗効果素子およびその製造方法
KR20130034260A (ko) * 2011-09-28 2013-04-05 에스케이하이닉스 주식회사 반도체 장치의 제조방법
JP2013115413A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013115400A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP5836163B2 (ja) * 2012-03-08 2015-12-24 ルネサスエレクトロニクス株式会社 磁気メモリセル、磁気メモリセルの製造方法
JP2013247198A (ja) * 2012-05-24 2013-12-09 Toshiba Corp 磁気抵抗素子及びその製造方法
JP2014090109A (ja) * 2012-10-31 2014-05-15 Hitachi High-Technologies Corp 磁気抵抗素子の製造方法
CN103337589B (zh) * 2013-06-27 2015-03-11 合肥工业大学 基于硫属亚铜化合物的准一维纳米阻变存储器与制备方法
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
KR102259870B1 (ko) * 2014-07-30 2021-06-04 삼성전자주식회사 자기 메모리 장치 및 그의 형성방법
US9548450B2 (en) * 2014-09-23 2017-01-17 Micron Technology, Inc. Devices containing metal chalcogenides
CN106328196B (zh) * 2015-07-01 2019-03-05 华邦电子股份有限公司 电阻式存储器装置的写入方法
KR101671860B1 (ko) * 2015-07-20 2016-11-03 서울대학교산학협력단 터널링 절연막이 삽입된 저항성 메모리 소자 및 이를 이용한 메모리 어레이와 그 제조방법
US9941469B2 (en) 2015-10-06 2018-04-10 International Business Machines Corporation Double spin filter tunnel junction
WO2017068611A1 (ja) * 2015-10-21 2017-04-27 キヤノンアネルバ株式会社 磁気抵抗素子の製造方法
JP2017183602A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 不揮発性メモリ素子および不揮発性メモリ素子の製造方法
JP2017183560A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 メモリ素子、及びメモリ素子の製造方法
US10062845B1 (en) * 2016-05-13 2018-08-28 Crossbar, Inc. Flatness of memory cell surfaces
US10522754B2 (en) 2016-06-15 2019-12-31 Crossbar, Inc. Liner layer for dielectric block layer
US10749110B1 (en) 2016-07-15 2020-08-18 Crossbar, Inc. Memory stack liner comprising dielectric block layer material
CN109983594B (zh) * 2016-12-27 2023-06-20 英特尔公司 具有多种类型的嵌入式非易失性存储器器件的单片集成电路
EP3343655B1 (en) * 2016-12-29 2022-03-02 IMEC vzw Magnetic tunnel junction device
KR102305342B1 (ko) * 2019-11-14 2021-09-24 울산과학기술원 2차원 강유전성 물질을 이용한 비휘발성 3진 메모리 소자 및 이의 제조 방법
CN111864058B (zh) * 2020-07-29 2023-04-18 浙江驰拓科技有限公司 存储位元的制备方法及mram的制备方法
JP2023042173A (ja) * 2021-09-14 2023-03-27 キオクシア株式会社 磁気メモリデバイス
KR102781519B1 (ko) * 2022-12-29 2025-03-17 인하대학교 산학협력단 코발트 박막의 건식 식각방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5761115A (en) 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
US6165803A (en) * 1999-05-17 2000-12-26 Motorola, Inc. Magnetic random access memory and fabricating method thereof
ID28920A (id) 1999-07-22 2001-07-12 Koninkl Philips Electronics Nv Metode pembuatan peranti sambungan saluran magnetik
US20020036876A1 (en) * 2000-09-06 2002-03-28 Yasuhiro Kawawake Magnetoresistive element, method for manufacturing the same, and magnetic device using the same
AU2002225761A1 (en) * 2000-11-30 2002-06-11 Asm America, Inc. Thin films for magnetic devices
JP2002334972A (ja) * 2001-05-10 2002-11-22 Sony Corp 磁気メモリ装置
US6693821B2 (en) 2001-06-28 2004-02-17 Sharp Laboratories Of America, Inc. Low cross-talk electrically programmable resistance cross point memory
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
JP2003078185A (ja) 2001-09-03 2003-03-14 Nec Corp 強磁性トンネル接合構造及びその製造方法並びに該強磁性トンネル接合を用いた磁気メモリ
JP2003243630A (ja) * 2002-02-18 2003-08-29 Sony Corp 磁気メモリ装置およびその製造方法
US6759263B2 (en) * 2002-08-29 2004-07-06 Chentsau Ying Method of patterning a layer of magnetic material
US7199055B2 (en) * 2003-03-03 2007-04-03 Cypress Semiconductor Corp. Magnetic memory cell junction and method for forming a magnetic memory cell junction
US7140374B2 (en) * 2003-03-14 2006-11-28 Lam Research Corporation System, method and apparatus for self-cleaning dry etch
JP4792714B2 (ja) 2003-11-28 2011-10-12 ソニー株式会社 記憶素子及び記憶装置
JP4608875B2 (ja) 2003-12-03 2011-01-12 ソニー株式会社 記憶装置
US7211446B2 (en) * 2004-06-11 2007-05-01 International Business Machines Corporation Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
KR100695164B1 (ko) 2005-11-09 2007-03-14 삼성전자주식회사 스위칭 소자로서 트랜지스터 및 다이오드를 포함하는하이브리드 타입의 비휘발성 메모리 소자
CN101449361A (zh) * 2006-03-16 2009-06-03 泰格尔公司 消除磁性随机存取存储器器件结构中的电短路的干法蚀刻停止工艺
RU2390883C1 (ru) * 2006-09-13 2010-05-27 Кэнон АНЕЛВА Корпорейшн Способ изготовления элемента с магниторезистивным эффектом и многокамерное устройство для изготовления элемента с магниторезистивным эффектом

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US8268713B2 (en) 2012-09-18
JP2011054873A (ja) 2011-03-17
CN102013454A (zh) 2011-04-13
US20110059557A1 (en) 2011-03-10

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