JP4899377B2 - 不揮発性磁気記憶装置の製造方法 - Google Patents
不揮発性磁気記憶装置の製造方法 Download PDFInfo
- Publication number
- JP4899377B2 JP4899377B2 JP2005237140A JP2005237140A JP4899377B2 JP 4899377 B2 JP4899377 B2 JP 4899377B2 JP 2005237140 A JP2005237140 A JP 2005237140A JP 2005237140 A JP2005237140 A JP 2005237140A JP 4899377 B2 JP4899377 B2 JP 4899377B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic memory
- film
- layer
- memory element
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 178
- 238000000034 method Methods 0.000 title claims description 102
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 239000010410 layer Substances 0.000 claims description 175
- 230000015654 memory Effects 0.000 claims description 161
- 239000011229 interlayer Substances 0.000 claims description 112
- 230000008569 process Effects 0.000 claims description 63
- 230000001681 protective effect Effects 0.000 claims description 52
- 230000005415 magnetization Effects 0.000 claims description 48
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 6
- 238000012805 post-processing Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 description 65
- 239000000758 substrate Substances 0.000 description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 26
- 239000007789 gas Substances 0.000 description 25
- 239000010936 titanium Substances 0.000 description 24
- 238000004544 sputter deposition Methods 0.000 description 20
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 17
- 239000012535 impurity Substances 0.000 description 16
- 229910052786 argon Inorganic materials 0.000 description 15
- 229910052719 titanium Inorganic materials 0.000 description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 238000002955 isolation Methods 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000000460 chlorine Substances 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 229910020598 Co Fe Inorganic materials 0.000 description 8
- 229910002519 Co-Fe Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 238000001459 lithography Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000003628 erosive effect Effects 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000005290 antiferromagnetic effect Effects 0.000 description 6
- 239000002885 antiferromagnetic material Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 239000003302 ferromagnetic material Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 3
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 150000003481 tantalum Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Description
Claims (2)
- 磁化反転状態に依存して抵抗値が変化することで情報を記憶する記録層を有する磁気記憶素子を含むメモリセル領域と周辺回路領域とを備えた不揮発性磁気記憶装置の製造方法であって、
前記磁気記憶素子を形成する工程と、
形成した前記磁気記憶素子上を被覆する保護膜を形成する工程と、
前記磁気記憶素子上に接続する配線およびビアの形成工程、または、化学的機械研磨工程であり、ウエット処理を含む工程と、
を含み、
前記保護膜の形成工程では、前記保護膜を、
導電性を有して前記ウエット処理で用いる薬液に対して耐性を有する材料で構成し、
前記保護膜が形成された後に形成されるビット線の形成領域に沿うように、前記磁気記憶素子よりも平面的にみて大きな面積を有して前記磁気抵抗記憶素子の上面を完全に被覆するよう形成し、かつ、平坦化された層間絶縁膜の上に形成し、
前記ウエット処理を含む工程は、
前記配線およびビアを加工後の残渣除去のための後処理洗浄工程である
不揮発性磁気記憶装置の製造方法。 - 前記保護膜を形成した後に、
前記磁気記憶素子が形成される前記メモリセル領域における前記保護膜と前記層間絶縁膜とを残して、前記周辺回路領域の前記層間絶縁膜を除去し、
前記周辺回路領域に低誘電率膜を形成する
請求項1記載の不揮発性磁気記憶装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005237140A JP4899377B2 (ja) | 2005-08-18 | 2005-08-18 | 不揮発性磁気記憶装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005237140A JP4899377B2 (ja) | 2005-08-18 | 2005-08-18 | 不揮発性磁気記憶装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007053221A JP2007053221A (ja) | 2007-03-01 |
JP4899377B2 true JP4899377B2 (ja) | 2012-03-21 |
Family
ID=37917467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005237140A Expired - Fee Related JP4899377B2 (ja) | 2005-08-18 | 2005-08-18 | 不揮発性磁気記憶装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4899377B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5641026B2 (ja) * | 2012-08-10 | 2014-12-17 | ソニー株式会社 | メモリ |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003282837A (ja) * | 2002-03-27 | 2003-10-03 | Sony Corp | 磁気メモリ装置およびその製造方法 |
JP2005209675A (ja) * | 2004-01-20 | 2005-08-04 | Sony Corp | 磁気記憶装置の製造方法 |
-
2005
- 2005-08-18 JP JP2005237140A patent/JP4899377B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2007053221A (ja) | 2007-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7271010B2 (en) | Nonvolatile magnetic memory device and manufacturing method thereof | |
JP5601181B2 (ja) | 磁気抵抗効果素子及びその製造方法 | |
US8587043B2 (en) | Magnetoresistive random access memory and method of manufacturing the same | |
US9673388B2 (en) | Integrated circuit structures with spin torque transfer magnetic random access memory and methods for fabricating the same | |
JP2010165790A (ja) | 不揮発性磁気メモリ装置 | |
JP2012517107A (ja) | ダマシンタイププロセスで形成されたトンネル障壁とピンド層と頂部電極とを備えた磁気トンネル接合 | |
WO2003069674A1 (fr) | Dispositif a memoire magnetique et procede de fabrication associe | |
US20160260772A1 (en) | Semiconductor device and method of manufacturing same | |
US11646069B2 (en) | MRAM semiconductor structure and method of forming the same | |
US9490423B2 (en) | Integrated circuit structures with spin torque transfer magnetic random access memory ultilizing aluminum metallization layers and methods for fabricating the same | |
US12010923B2 (en) | Semiconductor device and method for forming the same | |
US7088610B2 (en) | Magnetic memory apparatus and method of manufacturing magnetic memory apparatus | |
JP2005072491A (ja) | ドライエッチング方法及び磁気メモリ装置の製造方法 | |
US6958503B2 (en) | Nonvolatile magnetic memory device | |
JP2008282940A (ja) | 磁気記憶装置の製造方法 | |
CN109994600B (zh) | 一种磁性随机存储器的制作方法 | |
JP2004319725A (ja) | 磁気ランダムアクセスメモリ装置 | |
JP2009290050A (ja) | 磁気抵抗効果素子及びその製造方法 | |
JP2008021816A (ja) | 不揮発性磁気記憶装置の製造方法 | |
JP4899377B2 (ja) | 不揮発性磁気記憶装置の製造方法 | |
JP2003218324A (ja) | 磁気記憶装置およびその製造方法 | |
TW202118105A (zh) | 半導體裝置的形成方法 | |
JP5327293B2 (ja) | 不揮発性磁気メモリ装置 | |
JP2005243764A (ja) | 磁気記憶装置の製造方法 | |
JP2006059869A (ja) | トグルモード書込型不揮発性磁気メモリ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080612 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20091007 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20091016 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110317 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110405 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110920 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111114 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111206 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111219 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150113 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |