JP2010161236A - 光電変換装置の製造方法 - Google Patents

光電変換装置の製造方法 Download PDF

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Publication number
JP2010161236A
JP2010161236A JP2009002917A JP2009002917A JP2010161236A JP 2010161236 A JP2010161236 A JP 2010161236A JP 2009002917 A JP2009002917 A JP 2009002917A JP 2009002917 A JP2009002917 A JP 2009002917A JP 2010161236 A JP2010161236 A JP 2010161236A
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JP
Japan
Prior art keywords
region
gate electrode
photoelectric conversion
insulating film
transfer transistor
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Pending
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JP2009002917A
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English (en)
Japanese (ja)
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JP2010161236A5 (enExample
Inventor
Ryuichi Mishima
隆一 三島
Mineo Shimotsusa
峰生 下津佐
Hiroaki Naruse
裕章 成瀬
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009002917A priority Critical patent/JP2010161236A/ja
Priority to US12/622,747 priority patent/US7935557B2/en
Publication of JP2010161236A publication Critical patent/JP2010161236A/ja
Priority to US13/073,321 priority patent/US8163588B2/en
Publication of JP2010161236A5 publication Critical patent/JP2010161236A5/ja
Priority to US13/431,113 priority patent/US8698208B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
JP2009002917A 2009-01-08 2009-01-08 光電変換装置の製造方法 Pending JP2010161236A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009002917A JP2010161236A (ja) 2009-01-08 2009-01-08 光電変換装置の製造方法
US12/622,747 US7935557B2 (en) 2009-01-08 2009-11-20 Manufacturing method of a photoelectric conversion device
US13/073,321 US8163588B2 (en) 2009-01-08 2011-03-28 Manufacturing method of a photoelectric conversion device
US13/431,113 US8698208B2 (en) 2009-01-08 2012-03-27 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009002917A JP2010161236A (ja) 2009-01-08 2009-01-08 光電変換装置の製造方法

Publications (2)

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JP2010161236A true JP2010161236A (ja) 2010-07-22
JP2010161236A5 JP2010161236A5 (enExample) 2012-02-16

Family

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Family Applications (1)

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JP2009002917A Pending JP2010161236A (ja) 2009-01-08 2009-01-08 光電変換装置の製造方法

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US (3) US7935557B2 (enExample)
JP (1) JP2010161236A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090250778A1 (en) * 2008-04-04 2009-10-08 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, photoelectric conversion device designing method, and photoelectric conversion device manufacturing method
DE102010048601A1 (de) 2009-10-16 2011-04-21 Alps Electric Co., Ltd. Eingabevorrichtung mit variablem Betätigungsgefühl
KR101476035B1 (ko) * 2013-02-04 2014-12-23 가부시끼가이샤 도시바 고체 촬상 장치의 제조 방법 및 고체 촬상 장치
KR20160017609A (ko) 2014-08-06 2016-02-16 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2016092081A (ja) * 2014-10-30 2016-05-23 キヤノン株式会社 光電変換装置および光電変換装置の製造方法
JP2016154166A (ja) * 2015-02-20 2016-08-25 キヤノン株式会社 光電変換装置及びその製造方法
JP2016178143A (ja) * 2015-03-19 2016-10-06 セイコーエプソン株式会社 固体撮像素子及びその製造方法
JP2017130693A (ja) * 2017-04-13 2017-07-27 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP2019046924A (ja) * 2017-08-31 2019-03-22 キヤノン株式会社 光電変換装置の製造方法

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* Cited by examiner, † Cited by third party
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JP2010161236A (ja) 2009-01-08 2010-07-22 Canon Inc 光電変換装置の製造方法
JP2010206181A (ja) * 2009-02-06 2010-09-16 Canon Inc 光電変換装置及び撮像システム
JP5538922B2 (ja) * 2009-02-06 2014-07-02 キヤノン株式会社 固体撮像装置の製造方法
JP2010206178A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置、及び光電変換装置の製造方法
JP5558916B2 (ja) * 2009-06-26 2014-07-23 キヤノン株式会社 光電変換装置の製造方法
JP5563257B2 (ja) * 2009-08-28 2014-07-30 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
US8804021B2 (en) 2011-11-03 2014-08-12 Omnivision Technologies, Inc. Method, apparatus and system for providing improved full well capacity in an image sensor pixel
JP6124502B2 (ja) 2012-02-29 2017-05-10 キヤノン株式会社 固体撮像装置およびその製造方法
JP6231741B2 (ja) 2012-12-10 2017-11-15 キヤノン株式会社 固体撮像装置およびその製造方法
JP6274729B2 (ja) 2013-02-04 2018-02-07 キヤノン株式会社 固体撮像装置およびカメラ
JP2014199898A (ja) * 2013-03-11 2014-10-23 ソニー株式会社 固体撮像素子および製造方法、並びに、電子機器
JP2014225536A (ja) 2013-05-15 2014-12-04 キヤノン株式会社 固体撮像装置及びカメラ
JP6274567B2 (ja) 2014-03-14 2018-02-07 キヤノン株式会社 固体撮像装置及び撮像システム
JP2016001709A (ja) 2014-06-12 2016-01-07 キヤノン株式会社 固体撮像装置の製造方法
JP6362093B2 (ja) * 2014-06-13 2018-07-25 キヤノン株式会社 固体撮像装置の製造方法及び固体撮像装置
JP2017139431A (ja) * 2016-02-05 2017-08-10 キヤノン株式会社 固体撮像装置及びその製造方法
JP6978893B2 (ja) * 2017-10-27 2021-12-08 キヤノン株式会社 光電変換装置、その製造方法及び機器
CN108063146A (zh) * 2017-12-15 2018-05-22 上海华力微电子有限公司 Cmos图像传感器的制造方法
JP7568620B2 (ja) * 2019-06-26 2024-10-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
US11469307B2 (en) 2020-09-29 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device
KR20230098578A (ko) * 2020-11-12 2023-07-04 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 소자 및 촬상 장치
US12396273B2 (en) * 2022-08-12 2025-08-19 Omnivision Technologies, Inc. Image sensor structure for reduced pixel pitch and methods thereof

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JPH11274450A (ja) * 1998-03-19 1999-10-08 Toshiba Corp 固体撮像装置
JP2001267547A (ja) * 1999-12-28 2001-09-28 Hynix Semiconductor Inc Ｃｍｏｓイメージセンサの製造方法
JP2005072236A (ja) * 2003-08-25 2005-03-17 Renesas Technology Corp 半導体装置および半導体装置の製造方法
JP2006041538A (ja) * 2004-07-29 2006-02-09 Magnachip Semiconductor Ltd 電荷伝送効率を向上させたイメージセンサ及びその製造方法
JP2007500444A (ja) * 2003-07-30 2007-01-11 マイクロン テクノロジー インコーポレイテッド 高量子効率のための角度を持たせたピンフォトダイオードとその製法
JP2007294540A (ja) * 2006-04-21 2007-11-08 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2008041726A (ja) * 2006-08-02 2008-02-21 Canon Inc 光電変換装置、光電変換装置の製造方法及び撮像システム
JP2010147193A (ja) * 2008-12-17 2010-07-01 Sharp Corp 固体撮像装置およびその製造方法、並びに電子情報機器

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JP2001345437A (ja) 2000-06-02 2001-12-14 Sony Corp 固体撮像素子及びその製造方法
KR20040036087A (ko) * 2002-10-23 2004-04-30 주식회사 하이닉스반도체 광의 파장에 따라 포토다이오드의 깊이가 다른 씨모스이미지센서 및 그 제조 방법
US6908839B2 (en) * 2003-09-17 2005-06-21 Micron Technology, Inc. Method of producing an imaging device
JP2005123517A (ja) 2003-10-20 2005-05-12 Canon Inc 固体撮像装置およびその製造方法、ラインセンサ、および固体撮像ユニット
US6900507B1 (en) * 2004-01-07 2005-05-31 Micron Technology, Inc. Apparatus with silicide on conductive structures
JP4646577B2 (ja) 2004-09-01 2011-03-09 キヤノン株式会社 光電変換装置、その製造方法及び撮像システム
JP2006261597A (ja) 2005-03-18 2006-09-28 Canon Inc 固体撮像装置、その製造方法及びカメラ
KR100660348B1 (ko) * 2005-12-28 2006-12-22 동부일렉트로닉스 주식회사 Ｃｍｏｓ 이미지 센서의 제조방법
JP2007242697A (ja) 2006-03-06 2007-09-20 Canon Inc 撮像装置および撮像システム
JP4315457B2 (ja) 2006-08-31 2009-08-19 キヤノン株式会社 光電変換装置及び撮像システム
JP5110831B2 (ja) 2006-08-31 2012-12-26 キヤノン株式会社 光電変換装置及び撮像システム
JP5305622B2 (ja) 2006-08-31 2013-10-02 キヤノン株式会社 光電変換装置の製造方法
JP5159120B2 (ja) 2007-02-23 2013-03-06 キヤノン株式会社 光電変換装置およびその製造方法
JP4110192B1 (ja) 2007-02-23 2008-07-02 キヤノン株式会社 光電変換装置及び光電変換装置を用いた撮像システム
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JPH11274450A (ja) * 1998-03-19 1999-10-08 Toshiba Corp 固体撮像装置
JP2001267547A (ja) * 1999-12-28 2001-09-28 Hynix Semiconductor Inc Ｃｍｏｓイメージセンサの製造方法
JP2007500444A (ja) * 2003-07-30 2007-01-11 マイクロン テクノロジー インコーポレイテッド 高量子効率のための角度を持たせたピンフォトダイオードとその製法
JP2005072236A (ja) * 2003-08-25 2005-03-17 Renesas Technology Corp 半導体装置および半導体装置の製造方法
JP2006041538A (ja) * 2004-07-29 2006-02-09 Magnachip Semiconductor Ltd 電荷伝送効率を向上させたイメージセンサ及びその製造方法
JP2007294540A (ja) * 2006-04-21 2007-11-08 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2008041726A (ja) * 2006-08-02 2008-02-21 Canon Inc 光電変換装置、光電変換装置の製造方法及び撮像システム
JP2010147193A (ja) * 2008-12-17 2010-07-01 Sharp Corp 固体撮像装置およびその製造方法、並びに電子情報機器

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090250778A1 (en) * 2008-04-04 2009-10-08 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, photoelectric conversion device designing method, and photoelectric conversion device manufacturing method
US8274122B2 (en) * 2008-04-04 2012-09-25 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, photoelectric conversion device designing method, and photoelectric conversion device manufacturing method
DE102010048601A1 (de) 2009-10-16 2011-04-21 Alps Electric Co., Ltd. Eingabevorrichtung mit variablem Betätigungsgefühl
KR101476035B1 (ko) * 2013-02-04 2014-12-23 가부시끼가이샤 도시바 고체 촬상 장치의 제조 방법 및 고체 촬상 장치
US9564466B2 (en) 2014-08-06 2017-02-07 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
JP2016039220A (ja) * 2014-08-06 2016-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR20160017609A (ko) 2014-08-06 2016-02-16 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
US10056420B2 (en) 2014-08-06 2018-08-21 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
JP2016092081A (ja) * 2014-10-30 2016-05-23 キヤノン株式会社 光電変換装置および光電変換装置の製造方法
JP2016154166A (ja) * 2015-02-20 2016-08-25 キヤノン株式会社 光電変換装置及びその製造方法
JP2016178143A (ja) * 2015-03-19 2016-10-06 セイコーエプソン株式会社 固体撮像素子及びその製造方法
JP2017130693A (ja) * 2017-04-13 2017-07-27 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP2019046924A (ja) * 2017-08-31 2019-03-22 キヤノン株式会社 光電変換装置の製造方法
US10658421B2 (en) 2017-08-31 2020-05-19 Canon Kabushiki Kaisha Method of manufacturing photoelectric conversion apparatus using ion implantation

Also Published As

Publication number Publication date
US20120181582A1 (en) 2012-07-19
US8698208B2 (en) 2014-04-15
US8163588B2 (en) 2012-04-24
US7935557B2 (en) 2011-05-03
US20100173444A1 (en) 2010-07-08
US20110171770A1 (en) 2011-07-14

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