JP6978893B2 - 光電変換装置、その製造方法及び機器 - Google Patents
光電変換装置、その製造方法及び機器 Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims description 108
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000012535 impurity Substances 0.000 claims description 128
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 124
- 229910052796 boron Inorganic materials 0.000 claims description 124
- 239000004065 semiconductor Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 104
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 85
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 84
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 22
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- 238000000034 method Methods 0.000 claims description 13
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- 239000007789 gas Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 16
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- 238000009792 diffusion process Methods 0.000 description 10
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- 238000005468 ion implantation Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Description
位置B:5.5E17/cm3
位置C:1.0E19/cm3
位置B:1.5E18/cm3
位置C:7.5E18/cm3
位置A〜位置C:2.5E12/cm2
位置C〜位置D:4.2E12/cm2
位置C〜位置E:7.6E12/cm2
位置C〜位置F:1.2E13/cm2
位置A〜位置C:2.6E12/cm2
位置C〜位置G:1.8E12/cm2
位置C〜位置E:4.6E12/cm2
位置C〜位置F:8.3E12/cm2
Claims (22)
- 光電変換装置であって、
光電変換部を有する半導体基板と、
前記光電変換部の上に配された酸化シリコン膜と、
前記光電変換部と前記酸化シリコン膜との間に配された絶縁膜と、を備え、
前記半導体基板の中には、前記光電変換部の一部を構成するn型の第1不純物領域と、前記絶縁膜と前記第1不純物領域との間に配されたp型の第2不純物領域と、が設けられており、
前記絶縁膜のうちの前記第2不純物領域の上の部分及び前記第2不純物領域は、ボロンを含み、
前記半導体基板の表面に交差し前記第2不純物領域を通る直線上のボロン濃度のプロファイルに関して、前記第2不純物領域においてボロン濃度が極小値をとる位置を第1位置として、前記半導体基板の前記表面から前記第1位置までのボロン濃度の積分値が、前記半導体基板の前記表面から前記酸化シリコン膜の上面までのボロン濃度の積分値よりも大きいことを特徴とする光電変換装置。 - 前記第2不純物領域の前記第1位置と前記半導体基板の前記表面との間の距離が、20nm以下であることを特徴とする請求項1に記載の光電変換装置。
- 光電変換装置であって、
光電変換部を有する半導体基板と、
前記光電変換部の上に配された酸化シリコン膜と、
前記光電変換部と前記酸化シリコン膜との間に配された絶縁膜と、を備え、
前記半導体基板の中には、前記光電変換部の一部を構成するn型の第1不純物領域と、前記絶縁膜と前記第1不純物領域との間に配されたp型の第2不純物領域と、が設けられており、
前記絶縁膜のうちの前記第2不純物領域の上の部分及び前記第2不純物領域は、ボロンを含み、
前記半導体基板の表面に交差し前記第2不純物領域を通る直線上のボロン濃度のプロファイルに関して、前記半導体基板の前記表面におけるボロン濃度が、前記半導体基板の前記表面と前記酸化シリコン膜の上面との中間点におけるボロン濃度の10倍以上であることを特徴とする光電変換装置。 - 前記プロファイルに関して、前記半導体基板の前記表面と前記酸化シリコン膜の上面との間の距離と同じだけ前記半導体基板の表面から前記半導体基板の深さ方向に離れた位置を第2位置として、前記半導体基板の前記表面から前記第2位置までのボロン濃度の積分値が、前記半導体基板の前記表面から前記酸化シリコン膜の上面までのボロン濃度の積分値よりも大きいことを特徴とする請求項1乃至3の何れか1項に記載の光電変換装置。
- 前記プロファイルに関して、前記半導体基板の表面から深さ方向に20nm離れた位置を第3位置として、前記半導体基板の前記表面から前記第3位置までのボロン濃度の積分値が、前記半導体基板の前記表面から前記酸化シリコン膜の上面までのボロン濃度の積分値よりも大きいことを特徴とする請求項1乃至4の何れか1項に記載の光電変換装置。
- 前記半導体基板の上に配された層間絶縁膜と、
前記光電変換部の上に配され、前記層間絶縁膜で囲まれた誘電体領域と、を更に備え、
前記酸化シリコン膜は前記光電変換部と前記誘電体領域との間に配されていることを特徴とする請求項1乃至5の何れか1項に記載の光電変換装置。 - 光電変換装置であって、
光電変換部を有する半導体基板と、
前記半導体基板の上に配された層間絶縁膜と、
前記光電変換部の上に配され、前記層間絶縁膜で囲まれた誘電体領域と、
前記光電変換部と前記誘電体領域との間に配された酸化シリコン膜と、
前記光電変換部と前記酸化シリコン膜との間に配された絶縁膜と、を備え、
前記半導体基板の中には、前記光電変換部の一部を構成するn型の第1不純物領域と、前記絶縁膜と前記第1不純物領域との間に配されたp型の第2不純物領域と、が設けられており、
前記絶縁膜のうちの前記第2不純物領域の上の部分及び前記第2不純物領域は、ボロンを含み、
前記半導体基板の表面に交差し前記第2不純物領域を通る直線上のボロン濃度のプロファイルに関して、前記半導体基板の前記表面と前記酸化シリコン膜の上面との間の距離と同じだけ前記半導体基板の前記表面から前記半導体基板の深さ方向に離れた位置を所定の位置として、前記半導体基板の前記表面から前記所定の位置までのボロン濃度の積分値が、前記半導体基板の前記表面から前記酸化シリコン膜の上面までのボロン濃度の積分値よりも大きく、5.0E12/cm2以上であることを特徴とする光電変換装置。 - 前記誘電体領域の材料は水素を含有したシリコン化合物であることを特徴とする請求項6又は7に記載の光電変換装置。
- 前記半導体基板の前記表面から前記酸化シリコン膜の上面までのボロン濃度の積分値が、5.0E12/cm2以下であることを特徴とする請求項1乃至8の何れか1項に記載の光電変換装置。
- 前記半導体基板の前記表面におけるボロン濃度が、1.0E19/cm3以上であることを特徴とする請求項1乃至9の何れか1項に記載の光電変換装置。
- 前記半導体基板のうち前記第1不純物領域に隣接した部分の上にゲート電極を更に備え、
前記絶縁膜は、前記ゲート電極と前記半導体基板との間まで延びていることを特徴とする請求項1乃至10の何れか1項に記載の光電変換装置。 - 前記絶縁膜は、酸窒化シリコン膜であることを特徴とする請求項1乃至11の何れか1項に記載の光電変換装置。
- 前記酸化シリコン膜の上に配された窒化シリコン膜を更に備え、
前記窒化シリコン膜と前記酸化シリコン膜とは互いに接していることを特徴とする請求項1乃至12の何れか1項に記載の光電変換装置。 - 前記絶縁膜と前記第2不純物領域とは互いに接している、ことを特徴とする請求項1乃至13の何れか1項に記載の光電変換装置。
- 前記酸化シリコン膜と絶縁膜とは互いに接している、ことを特徴とする請求項1乃至14の何れか1項に記載の光電変換装置。
- 前記酸化シリコン膜の一部におけるボロン濃度が、1.0E17/cm3以上であることを特徴とする請求項1乃至15の何れか1項に記載の光電変換装置。
- 前記酸化シリコン膜の前記一部におけるボロン濃度が、1.0E18/cm3以下であることを特徴とする請求項16に記載の光電変換装置。
- 請求項1乃至17の何れか1項に記載の光電変換装置と、
前記光電変換装置から出力された信号を処理する処理装置と、
を備えることを特徴とする機器。 - 光電変換装置の製造方法であって、
半導体基板に、光電変換部の一部を構成するn型の第1不純物領域を形成する工程と、
前記半導体基板の上に絶縁膜を形成する工程と、
前記半導体基板に前記絶縁膜を通じてボロンを含む不純物を注入することによって、前記第1不純物領域の上にp型の第2不純物領域を形成する工程と、
ビスターシャリブチルアミノシラン(BTBAS)ガスを用いた熱化学気相成長(熱CVD)によって、600℃以下の成膜温度で前記絶縁膜の上に酸化シリコン膜を形成する工程と、を有することを特徴とする製造方法。 - 前記第2不純物領域を形成する工程において、10KeV以下のエネルギーで前記不純物を注入することを特徴とする請求項19に記載の製造方法。
- 絶縁膜を形成する工程の後であって、前記酸化シリコン膜を形成する工程の前に、前記半導体基板のうち前記第1不純物領域に隣接した部分の上にゲート電極を形成する工程を更に有することを特徴とする請求項19又は20に記載の製造方法。
- 前記酸化シリコン膜を形成する工程の後に、前記酸化シリコン膜に接するように窒化シリコン膜を形成する工程を更に有することを特徴とする請求項19乃至21の何れか1項に記載の製造方法。
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