JP2010140944A - プラズマエッチング装置及びプラズマクリーニング方法 - Google Patents
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Abstract
【解決手段】真空排気可能な処理容器10に上部電極38と下部電極12とが平行に配置され、下部電極12には第1高周波電源32より第1整合器34を介して第1の高周波が印加される。制御部68は、半導体ウエハWの無い処理容器10内で行われるプラズマクリーニングに際して、プラズマ生成に寄与する第1の高周波が、プラズマを生成させる第1の振幅を有する第1の期間と、プラズマを実質的に生成させない第2の振幅を有する第2の期間とを所定の周期で交互に繰り返すように、第1高周波電源32を制御する。
【選択図】 図1
Description
エッチングガス:SF6ガス/O2ガス=800sccm/800sccm
チャンバ内の圧力:200mT
HFパワー:第1振幅/第2振幅=750W/0W
変調周波数:10kHz
デューティ:50%
温度:上部電極/チャンバ側壁/下部電極=80/70/60℃
磁場:320G
クリーニング時間:40秒
半導体ウエハ口径:300mm
処理ガス:O2/N2=50/50sccm
チャンバ内の圧力:50mT
HFパワー:第1振幅/第2振幅=70W,80W/0W
変調周波数:10kHz,100kHz
デューティ:50%
温度:上部電極/チャンバ側壁/下部電極=80/70/60℃
磁場:320G
トリミング時間:20〜26秒
第1の高周波HFのパワーを70Wとし、無変調(連続波:CW)方式でトリミング処理を20秒かけて行った。半導体ウエハ上の中心部においては、縦方向のエッチング量つまりレジスト損失量(PR Loss)が40.2nm、横方向のエッチング量つまりトリミング量(Trim.amount)が45.1nmであり、トリミング比(Trim.ratio)は45.1nm/40.2nm=1.12であった。半導体ウエハ上のエッジ部では、レジスト損失量(PR Loss)が35.6nm、トリミング量(Trim.amount)が39.8nmであり、トリミング比(Trim.ratio)は1.12であった。
第1の高周波HFのパワー(ON期間または第1振幅のパワー)を70Wとし、この実施形態のプラズマクリーニングと同様のパルス変調方式によってトリミング処理を26秒かけて行った。中心部では、レジスト損失量(PR Loss)が37.5nm、トリミング量(Trim.amount)が53.7nmであり、トリミング比(Trim.ratio)は1.43であった。エッジ部では、レジスト損失量(PR Loss)が32.9nm、トリミング量(Trim.amount)が48.4nmであり、トリミング比(Trim.ratio)は1.47であった。
第1の高周波HFのパワー(ON期間または第1振幅のパワー)を85Wとし、この実施形態のプラズマクリーニングと同様のパルス変調方式によってトリミング処理を26秒かけて行った。中心部では、レジスト損失量(PR Loss)が38.2nm、トリミング量(Trim.amount)が47.7nmであり、トリミング比(Trim.ratio)は1.24であった。エッジ部では、レジスト損失量(PR Loss)が32.2nm、トリミング量(Trim.amount)が47.7nmであり、トリミング比(Trim.ratio)は1.48であった。
12 サセプタ(下部電極)
28 排気装置
32 第1高周波電源
34 第1整合器
36 給電棒
38 シャワーヘッド(上部電極)
40 静電チャック
40a 静電チャックのDC電極
40b 静電チャックの上部誘電体層
40c 静電チャックの下部誘電体層
66 エッチングガス供給部
68 クリーニングガス供給部
76 制御部
80 第2高周波電源
82 第2整合器
Claims (26)
- 真空排気可能な処理容器と、
前記処理容器内で被処理体を載置する第1電極と、
前記被処理体を静電力により保持するために前記第1電極の載置面に設けられ、少なくとも表層部の誘電体が金属を含む静電チャックと、
前記処理容器内で前記第1電極と平行に向かい合う第2電極と、
前記被処理体に所望のドライエッチング加工を施すために、前記第1電極と前記第2電極との間の処理空間に所望のエッチングガスを供給するエッチングガス供給部と、
前記処理容器内のプラズマクリーニングを被処理体無しで行うために、前記処理空間に所望のクリーニングガスを供給するクリーニングガス供給部と、
前記第1電極に前記エッチングガスまたは前記クリーニングガスのプラズマ生成に寄与する第1の高周波を印加する第1高周波給電部と、
前記処理容器内のプラズマクリーニングを被処理体無しで行う際に、前記第1の高周波がプラズマを生成させる第1の振幅を有する第1の期間と、前記第1の高周波がプラズマを実質的に生成させない第2の振幅を有する第2の期間とが所定の周期で交互に繰り返されるように、前記第1高周波給電部を制御する制御部と
を有するプラズマエッチング装置。 - 前記静電チャックの表層部の誘電体がAl2O3からなる、請求項1に記載のプラズマエッチング装置。
- 前記第2の振幅はゼロである、請求項1または請求項2に記載のプラズマエッチング装置。
- 前記第1の期間と前記第2の期間とが交互に繰り返される周波数は1kHz〜60kHzである、請求項1〜3のいずれか一項に記載のプラズマエッチング装置。
- 前記第1の期間のデューティは10%〜60%である、請求項1〜4のいずれか一項に記載のプラズマエッチング装置。
- 前記制御部は、前記プラズマクリーニングに際して、前記第1電極に対して前記第1の高周波の印加を開始した時からプラズマが着火するまでは前記第1の高周波が前記第1の振幅のみを持続的に有するように前記第1高周波給電部を制御し、前記プラズマが着火した後は前記第1の高周波において前記第1の期間と前記第2の期間とが前記所定の周期で交互に繰り返されるように前記第1高周波給電部を制御する、請求項1〜5のいずれか一項に記載のプラズマエッチング装置。
- 前記制御部は、前記プラズマクリーニングに際して、前記第1電極に対して前記第1の高周波の印加を開始した時から前記クリーニングガスの放電が安定するまでは前記第1の高周波が前記第1の振幅のみを持続的に有するように前記第1高周波給電部を制御し、前記クリーニングガスの放電が安定した後は前記第1の高周波において前記第1の期間と前記第2の期間とが前記所定の周期で交互に繰り返されるように前記第1高周波給電部を制御する、請求項1〜5のいずれか一項に記載のプラズマエッチング装置。
- 前記制御部は、前記プラズマクリーニングのために設定されたプラズマクリーニング時間を第1および第2のクリーニング時間に分割し、前記第1のクリーニング時間中は前記第1の高周波が前記第1の振幅のみを持続的に有するように前記第1高周波給電部を制御し、前記第2のクリーニング時間中は前記第1の高周波において前記第1の期間と前記第2の期間とが前記所定の周期で交互に繰り返されるように前記第1高周波給電部を制御する、請求項1〜5のいずれか一項に記載のプラズマエッチング装置。
- 前記制御部は、前記プラズマクリーニングのために設定されたプラズマクリーニング時間の開始から終了まで、前記第1の高周波において前記第1の期間と前記第2の期間とが前記所定の周期で交互に繰り返されるように前記第1高周波給電部を制御する、請求項1〜5のいずれか一項に記載のプラズマエッチング装置。
- 前記クリーニングガスはSF6ガスまたはNF3ガスとO2ガスとを含む混合ガスである、請求項1〜9のいずれか一項に記載のプラズマエッチング装置。
- 前記クリーニングガスにおいてSF6ガスまたはNF3ガスに対するO2ガスの混合比が略1である、請求項10に記載のプラズマエッチング装置。
- 前記プラズマクリーニングを枚葉単位またはロット単位の周期で定期的に実施する、請求項1〜11のいずれか一項に記載のプラズマエッチング装置。
- 前記ドライエッチング加工の最中に前記エッチングガスのプラズマから前記被処理体に引き込まれるイオンのエネルギーを制御するための第2の高周波を前記第1電極に印加する第2高周波給電部を有する、請求項1〜12のいずれか一項に記載のプラズマエッチング装置。
- 前記処理容器内のプラズマクリーニングを被処理体無しで行う際に、前記第1電極に前記第2の高周波を印加しないように、前記制御部が前記第1高周波給電部を制御する、請求項13に記載のプラズマエッチング装置。
- 真空排気可能な処理容器と、
前記処理容器内で被処理体を載置する第1電極と、
前記被処理体を静電力により保持するために前記第1電極の載置面に設けられ、少なくとも表層部の誘電体が金属を含む静電チャックと、
前記処理容器内で前記第1電極と平行に向かい合う第2電極と、
前記被処理体に所望のドライエッチング加工を施すために、前記第1電極と前記第2電極との間の処理空間に所望の処理ガスを供給する処理ガス供給部と、
前記処理容器内のプラズマクリーニングを被処理体無しで行うために、前記処理空間に所望のクリーニングガスを供給するクリーニングガス供給部と、
前記第1電極に前記処理ガスまたは前記クリーニングガスのプラズマ生成に寄与する第1の高周波を印加するための第1高周波給電部と
を有するプラズマエッチング装置において、前記処理容器内のプラズマクリーニングを被処理体無しで行うプラズマクリーニング方法であって、
前記第1の高周波がプラズマを生成させる第1の振幅を有する第1の期間と、前記第1の高周波がプラズマを実質的に生成させない第2の振幅を有する第2の期間とが所定の周期で交互に繰り返されることを特徴とするプラズマクリーニング方法。 - 前記静電チャックの表層部の誘電体がAl2O3からなる、請求項15に記載のプラズマクリーニング方法。
- 前記第2の振幅はゼロである、請求項15または請求項16に記載のプラズマクリーニング方法。
- 前記第1の期間と前記第2の期間とが交互に繰り返される周波数は1kHz〜60kHzである、請求項15〜17のいずれか一項に記載のプラズマクリーニング方法。
- 前記第1の期間のデューティは10%〜60%である、請求項15〜18のいずれか一項に記載のプラズマクリーニング方法。
- 前記プラズマクリーニングに際して、前記第1電極に対して前記第1の高周波の印加を開始した時からプラズマが着火するまでは前記第1の高周波が前記第1の振幅のみを持続的に有するように前記第1高周波給電部を制御し、プラズマが着火した後は前記第1の高周波において前記第1の期間と前記第2の期間とが前記所定の周期で交互に繰り返されるように前記第1高周波給電部を制御する、請求項15〜19のいずれか一項に記載のプラズマクリーニング方法。
- 前記プラズマクリーニングに際して、前記第1電極に対して前記第1の高周波の印加を開始した時から前記クリーニングガスの放電が安定するまでは前記第1の高周波が前記第1の振幅のみを持続的に有するように前記第1高周波給電部を制御し、前記クリーニングガスの放電が安定した後は前記第1の高周波において前記第1の期間と前記第2の期間とが前記所定の周期で交互に繰り返されるように前記第1高周波給電部を制御する、請求項15〜19のいずれか一項に記載のプラズマクリーニング方法。
- 前記プラズマクリーニングのために設定されたプラズマクリーニング時間を第1および第2のクリーニング時間に分割し、前記第1のクリーニング時間中は前記第1の高周波が前記第1の振幅のみを持続的に有するように前記第1高周波給電部を制御し、前記第2のクリーニング時間中は前記第1の高周波において前記第1の期間と前記第2の期間とが前記所定の周期で交互に繰り返されるように前記第1高周波給電部を制御する、請求項15〜19のいずれか一項に記載のプラズマクリーニング方法。
- 前記プラズマクリーニングのために設定されたプラズマクリーニング時間の開始から終了まで、前記第1の高周波において前記第1の期間と前記第2の期間とが前記所定の周期で交互に繰り返されるように前記第1高周波給電部を制御する、請求項15〜19のいずれか一項に記載のプラズマクリーニング方法。
- 前記クリーニングガスはSF6ガスとO2ガスとを含む混合ガスである、請求項15〜23のいずれか一項に記載のプラズマクリーニング方法。
- 前記クリーニングガスにおいてSF6ガスまたはNF3ガスに対するO2ガスの混合比が略1である、請求項24に記載のプラズマクリーニング方法。
- 前記プラズマクリーニングを枚葉単位またはロット単位の周期で定期的に実施する、請求項15〜25のいずれか一項に記載のプラズマクリーニング方法。
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JP2018049896A (ja) * | 2016-09-21 | 2018-03-29 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
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US9659756B2 (en) | 2017-05-23 |
US20100140221A1 (en) | 2010-06-10 |
US20140020709A1 (en) | 2014-01-23 |
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