JP2010130015A - セグメント化された基板を有するパワー半導体モジュール - Google Patents
セグメント化された基板を有するパワー半導体モジュール Download PDFInfo
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- JP2010130015A JP2010130015A JP2009267672A JP2009267672A JP2010130015A JP 2010130015 A JP2010130015 A JP 2010130015A JP 2009267672 A JP2009267672 A JP 2009267672A JP 2009267672 A JP2009267672 A JP 2009267672A JP 2010130015 A JP2010130015 A JP 2010130015A
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Abstract
【解決手段】パワー半導体モジュールは、セグメント化された基板35と、少なくとも2つの回路担体30とを含み、上記基板35は、互いに離間した、少なくとも2つの各基板セグメント35a,35bを有する。各回路担体30のそれぞれは、少なくとも上面側金属層(第1金属層)32が設けられたセラミック基材部31を含む。各回路担体30のそれぞれは、各基板セグメント35a,35bのそれぞれの上に配置されている。少なくとも2つの各回路担体は、互いに離間している。
【選択図】図1
Description
31 セラミック基板
32 上面側金属層(第1金属層)
35 基板
35a 基板セグメント
35b 基板セグメント
Claims (24)
- 互いに離間した少なくとも2つの各基板セグメントを有する基板と、
少なくとも2つの各回路担体とを含み、
上記各回路担体のそれぞれの上に、少なくとも第1金属層が配置され、
上記各回路担体のそれぞれは、上記各基板セグメントのそれぞれの上に配置され、
上記少なくとも2つの各回路担体は、互いに離間しているパワー半導体モジュール。 - 上記各回路担体の1つの上記第1金属層上に配置された、少なくとも1つのパワー半導体チップを含む請求項1に記載のパワー半導体モジュール。
- 上記少なくとも2つの各回路担体が配置された、共通のハウジングを含む請求項1に記載のパワー半導体モジュール。
- ハウジングカバーを含み、
上記ハウジングは、上記基板と上記ハウジングカバーから形成されている請求項3に記載のパワー半導体モジュール。 - 上記基板は、上記パワー半導体モジュールの下面部を形成している請求項1に記載のパワー半導体モジュール。
- 上記各回路担体の少なくとも1つは、ダイレクト銅ボンディング担体、ダイレクトアルミニウムボンディング担体、活性金属ブレージング担体の内の1つである請求項1に記載のパワー半導体モジュール。
- 上記各基板セグメントの少なくとも1つは、銅、アルミニウム、金属マトリックス複合体の1つを有する、または、銅、アルミニウム、金属マトリックス複合体の1つから実質的になる、または、銅、アルミニウム、金属マトリックス複合体の1つからなる請求項1に記載のパワー半導体モジュール。
- 上記各基板セグメントの少なくとも1つは、銅、アルミニウム、アルミニウムシリコンカーバイドの金属マトリックス複合体、銅シリコンカーバイドの金属マトリックス複合体、アルミニウムカーバイドの金属マトリックス複合体の1つを有する、または、銅、アルミニウム、アルミニウムシリコンカーバイドの金属マトリックス複合体、銅シリコンカーバイドの金属マトリックス複合体、アルミニウムカーバイドの金属マトリックス複合体の1つから実質的になる、または、銅、アルミニウム、アルミニウムシリコンカーバイドの金属マトリックス複合体、銅シリコンカーバイドの金属マトリックス複合体、アルミニウムカーバイドの金属マトリックス複合体の1つからなる請求項1に記載のパワー半導体モジュール。
- 上記第1金属層の1つの、幾つかの、全ての厚さは、0.1mmから0.6mmまでの厚さである請求項1に記載のパワー半導体モジュール。
- 上記各基板セグメントは、上記各基板セグメントが共通のヒートシンクによって結合されていないときでも、互いに機械的に結合されている請求項1に記載のパワー半導体モジュール。
- 上記基板は、上記モジュールをヒートシンクにねじ止めするためのねじ穴が無いものである請求項1に記載のパワー半導体モジュール。
- 互いに離間した少なくとも2つの各基板セグメントを有する基板と、
少なくとも2つの各回路担体とを含み、
上記各回路担体のそれぞれの上に、少なくとも第1金属層が配置され、
上記各回路担体のそれぞれは、上記各基板セグメントのそれぞれの上に配置され、
上記少なくとも2つの各回路担体は、互いに離間しており、
上記各回路担体の少なくとも1つは、セラミック基板を有し、
上記各回路担体のそれぞれの第1金属層は、上記セラミック基板上に配置されているパワー半導体モジュール。 - 上記セラミック基板の少なくとも1つは、酸化アルミニウム、窒化アルミニウム、窒化シリコンの各マテリアルの内の1つを有する、または、上記各マテリアルの内の1つからなる請求項12に記載のパワー半導体モジュール。
- 上記セラミック基板の1つ、または、幾つか、または全ての厚さは、0.2mmから2mmまでの厚さの範囲内である請求項12に記載のパワー半導体モジュール。
- 互いに離間した少なくとも2つの各基板セグメントを有する基板と、
少なくとも2つの各回路担体とを含み、
上記各回路担体のそれぞれの上に、少なくとも第1金属層が配置され、
上記各回路担体のそれぞれは、上記各基板セグメントのそれぞれの上に配置され、
上記少なくとも2つの各回路担体は、互いに離間しており、
上記各基板セグメントの少なくとも1つの基板セグメントは、上記基板セグメントが上記基板セグメント上に配置された各回路担体の全てとオーバーラップするマージン部を、上記基板セグメント内に有するパワー半導体モジュール。 - 上記マージン部は、上記基板セグメント上に配置された各回路担体の全ての周囲に配置されている請求項15に記載のパワー半導体モジュール。
- 上記マージン部は、上記基板セグメントの互いに対向する各側部のみに沿って配置されている請求項15に記載のパワー半導体モジュール。
- 上記マージン部の幅は、3mm以下である請求項15に記載のパワー半導体モジュール。
- ヒートシンクが取り付けられるパワー半導体モジュールにおいて、
互いに離間した少なくとも2つの各基板セグメントを有する基板と、
上記各基板セグメントのそれぞれの上に配置され、互いに離間した少なくとも2つの各回路担体と、
上記各回路担体のそれぞれの上に、少なくとも配置された第1金属層と、
上記ヒートシンクを上記パワー半導体モジュールに取り付けるための搭載用フレームとを含み
上記搭載用フレームは、上記パワー半導体モジュールに上記ヒートシンクが取り付けられるときに、上記ヒートシンクに対して上記各基板セグメントを押しつける固さを有しているパワー半導体モジュール。 - 上記各基板セグメントのそれぞれのために、上記各基板セグメントのそれぞれの上に配置されている上記各回路担体、および、上記各回路担体上に配置されている各電子部品が、上記搭載用フレームの各側壁によって個々に囲まれている請求項19に記載のパワー半導体モジュール。
- 上記各基板セグメントのそれぞれのために、ハウジングカバーがそれぞれ設けられ、
上記ハウジングカバーは、上記各基板セグメントのそれぞれの上に配置されている上記各回路担体、および、上記各回路担体上に配置されている各電子部品を有する請求項19に記載のパワー半導体モジュール。 - 上記各基板セグメントのそれぞれは、上記搭載用フレームに隣接する、少なくとも1つのストッパを有する請求項19に記載のパワー半導体モジュール。
- 上記各基板セグメントの少なくとも1つは、凹部を有し、
上記凹部は、上記搭載用フレームにおける、上記凹部に対応するラッチング素子と上記凹部内にて係合するものである請求項19に記載のパワー半導体モジュール。 - 上記凹部および上記ラッチング素子は、互いにプレスフィット結合を形成するものである請求項23に記載のパワー半導体モジュール。
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US8237260B2 (en) | 2012-08-07 |
US20100127371A1 (en) | 2010-05-27 |
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