JP5529208B2 - パワーモジュールの構造及び成形方法 - Google Patents
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- 238000000465 moulding Methods 0.000 title claims description 112
- 238000000034 method Methods 0.000 title claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 228
- 239000002184 metal Substances 0.000 claims description 228
- 238000001816 cooling Methods 0.000 claims description 221
- 239000004065 semiconductor Substances 0.000 claims description 150
- 229920005989 resin Polymers 0.000 claims description 76
- 239000011347 resin Substances 0.000 claims description 76
- 238000003825 pressing Methods 0.000 claims description 57
- 230000008859 change Effects 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 description 50
- 239000011810 insulating material Substances 0.000 description 36
- 238000004519 manufacturing process Methods 0.000 description 24
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- 230000017525 heat dissipation Effects 0.000 description 15
- 239000012467 final product Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000008602 contraction Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
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- 238000007906 compression Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
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- 230000000149 penetrating effect Effects 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
12a,12b 半導体素子
14a〜14e 金属ブロック
16,302,402,502,602 フレーム部材
18,22,24 はんだ
20a,20b,202a,202b バネ部材
26a,26b 冷却ブロック
28 冷却フィン
30 絶縁材
32 モールド樹脂
34,102,204,304,408 モールド金型
34a−1,34b−1,102a,102b 金型本体
34a−2,34b−2,104a,104b 押圧ピン
306a,306b 導電性樹脂
404a,404b 多層ブロック部材
406 スライド片
504,604 バネ部材等
Claims (7)
- 半導体素子と、
前記半導体素子を挟んで配置される第1及び第2の冷却部材と、
前記第1の冷却部材と前記第2の冷却部材との間で前記半導体素子を支持するフレーム部材と、
前記第1の冷却部材と前記第2の冷却部材との間に充填されるモールド樹脂と、を備え、
前記フレーム部材は、前記第1の冷却部材と前記第2の冷却部材との距離を可変し得る、該第1の冷却部材と該第2の冷却部材との間で前記半導体素子と該第1及び第2の冷却部材との積層方向に積層され、かつ、該積層方向に直交する直交方向に互いにスライドし得る複数のブロック片からなる多層ブロック部材を有することを特徴とするパワーモジュールの構造。 - 前記複数のブロック片は、モールド成形時にモールド金型により前記積層方向に圧縮されることにより前記直交方向に互いにスライドすることを特徴とする請求項1記載のパワーモジュールの構造。
- 前記多層ブロック部材は、前記半導体素子と前記第1又は第2の冷却部材との間に介在され、該半導体素子及び該第1又は第2の冷却部材と少なくとも熱的及び機械的に接続されていることを特徴とする請求項1又は2記載のパワーモジュールの構造。
- 半導体素子と、前記半導体素子を挟んで配置される第1及び第2の冷却部材と、前記第1の冷却部材と前記第2の冷却部材との距離を可変し得る、該第1の冷却部材と該第2の冷却部材との間で弾性変形し得る弾性部材を有し、該第1の冷却部材と該第2の冷却部材との間で前記半導体素子を支持するフレーム部材と、前記第1の冷却部材と前記第2の冷却部材との間に充填されるモールド樹脂と、を備えるパワーモジュールをモールド金型を用いて成形する成形方法であって、
前記モールド金型は、モールド成形時に前記第1の冷却部材を支持する第1の金型本体と、モールド成形時に前記第2の冷却部材を支持する第2の金型本体と、前記第1の金型本体側から延び、前記第2の冷却部材側に設けられた第2の金属ブロックを押圧する第1の押圧ピンと、前記第2の金型本体側から延び、前記第1の冷却部材側に設けられた第1の金属ブロックを押圧する第2の押圧ピンと、を有し、
前記弾性部材は、モールド成形時に前記第1の金属ブロックが前記第2の押圧ピンにより押圧されかつ前記第2の金属ブロックが前記第1の押圧ピンにより押圧されることにより引っ張られて弾性変形すると共に、
前記距離が所望距離に維持されるように前記弾性部材が弾性変形した状態で前記モールド樹脂が充填されることにより前記パワーモジュールを成形することを特徴とするパワーモジュールの成形方法。 - 前記第1及び第2の金属ブロックは、前記第1及び第2の押圧ピン同士が干渉しないように互いに異なるサイズを有することを特徴とする請求項4記載のパワーモジュールの成形方法。
- 前記第1及び第2の押圧ピンは、前記第1及び第2の金型本体とは別体で設けられていることを特徴とする請求項4又は5記載のパワーモジュールの成形方法。
- 半導体素子と、前記半導体素子を挟んで配置される第1及び第2の冷却部材と、前記第1の冷却部材と前記第2の冷却部材との距離を可変し得る、該第1の冷却部材と該第2の冷却部材との間で前記半導体素子と該第1及び第2の冷却部材との積層方向に積層され、かつ、該積層方向に直交する直交方向に互いにスライドし得る複数のブロック片からなる多層ブロック部材を有し、該第1の冷却部材と該第2の冷却部材との間で前記半導体素子を支持するフレーム部材と、前記第1の冷却部材と前記第2の冷却部材との間に充填されるモールド樹脂と、を備えるパワーモジュールを成形する成形方法であって、
前記複数のブロック片は、モールド成形時にモールド金型により前記積層方向に圧縮されることにより前記直交方向に互いにスライドすると共に、
前記距離が所望距離に維持されるように前記複数のブロック片が前記直交方向に互いにスライドした状態で前記モールド樹脂が充填されることにより前記パワーモジュールを成形することを特徴とするパワーモジュールの成形方法。
Priority Applications (3)
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JP2012130772A JP5529208B2 (ja) | 2011-08-25 | 2012-06-08 | パワーモジュールの構造及び成形方法 |
US13/590,707 US9059145B2 (en) | 2011-08-25 | 2012-08-21 | Power module, method for manufacturing power module, and molding die |
CN201210306999.3A CN103066027B (zh) | 2011-08-25 | 2012-08-24 | 动力模块、制造动力模块的方法以及成型模具 |
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JP2011184080 | 2011-08-25 | ||
JP2011184080 | 2011-08-25 | ||
JP2012130772A JP5529208B2 (ja) | 2011-08-25 | 2012-06-08 | パワーモジュールの構造及び成形方法 |
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JP5529208B2 true JP5529208B2 (ja) | 2014-06-25 |
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