JP5840933B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5840933B2 JP5840933B2 JP2011249373A JP2011249373A JP5840933B2 JP 5840933 B2 JP5840933 B2 JP 5840933B2 JP 2011249373 A JP2011249373 A JP 2011249373A JP 2011249373 A JP2011249373 A JP 2011249373A JP 5840933 B2 JP5840933 B2 JP 5840933B2
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- JP
- Japan
- Prior art keywords
- resin layer
- heat sink
- semiconductor device
- heat
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 64
- 239000011347 resin Substances 0.000 claims description 48
- 229920005989 resin Polymers 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000003566 sealing material Substances 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 description 21
- 229920001187 thermosetting polymer Polymers 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
正面及び背面を有する半導体素子と、当該半導体素子の正面側に位置して前記半導体素子の熱を放熱する正面側放熱板と、前記半導体素子の背面側に位置して前記熱を放熱する背面側放熱板と、前記正面側放熱板と前記半導体素子との面方向の間隔を調節する調節部材と、を含む半導体装置であって、前記正面側放熱板の正面と前記背面側放熱板の背面を除いて前記半導体装置を覆う封止材を含み、前記調節部材は前記封止材よりも熱硬化収縮率が大きい樹脂層を含み、前記樹脂層を一対の金属部材にて面方向に挟持してなることを特徴とする。
2 半導体素子
3 ヒートシンク(正面側放熱板)
4 ヒートシンク(背面側放熱板)
4a 端子
5 封止材
6 ブロック(調節部材)
61 樹脂層
62 金属部材(正面側)
63 金属部材(背面側)
63a 端子
60 銅ブロック
7 下側半田層
8 上側半田層
9 第三半田層
Claims (4)
- 正面及び背面を有する半導体素子と、当該半導体素子の正面側に位置して前記半導体素子の熱を放熱する正面側放熱板と、前記半導体素子の背面側に位置して前記熱を放熱する背面側放熱板と、前記正面側放熱板と前記半導体素子との面方向の間隔を調節する調節部材と、を含む半導体装置であって、
前記正面側放熱板の正面と前記背面側放熱板の背面を除いて前記半導体装置を覆う封止材を含み、
前記調節部材は前記封止材よりも熱硬化収縮率が大きい樹脂層を含み、前記樹脂層を一対の金属部材にて面方向に挟持してなることを特徴とする半導体装置。 - 前記樹脂層は前記一対の金属部材のうち前記樹脂層の正面側に位置する金属部材よりも前記面方向から視た面積が大きいことを特徴とする請求項1に記載の半導体装置。
- 前記樹脂層は当該樹脂層の伝熱性を高める粒子を含有することを特徴とする請求項2に記載の半導体装置。
- 前記一対の金属部材のうち前記樹脂層の背面側に位置する金属部材から電極が引き出されることを特徴とする請求項1〜3のいずれか一項に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011249373A JP5840933B2 (ja) | 2011-11-15 | 2011-11-15 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011249373A JP5840933B2 (ja) | 2011-11-15 | 2011-11-15 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013105928A JP2013105928A (ja) | 2013-05-30 |
JP5840933B2 true JP5840933B2 (ja) | 2016-01-06 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011249373A Active JP5840933B2 (ja) | 2011-11-15 | 2011-11-15 | 半導体装置 |
Country Status (1)
Country | Link |
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JP (1) | JP5840933B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6407756B2 (ja) * | 2014-03-31 | 2018-10-17 | 株式会社東芝 | 半導体モジュールの製造方法 |
JP6112077B2 (ja) * | 2014-07-03 | 2017-04-12 | トヨタ自動車株式会社 | 半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3322429B2 (ja) * | 1992-06-04 | 2002-09-09 | 新光電気工業株式会社 | 半導体装置 |
JPH08186199A (ja) * | 1994-12-28 | 1996-07-16 | Matsushita Electron Corp | 樹脂封止型半導体装置 |
JPH10116934A (ja) * | 1996-10-09 | 1998-05-06 | Fuji Electric Co Ltd | 樹脂封止半導体装置およびその製造方法 |
JP2001007256A (ja) * | 1999-06-22 | 2001-01-12 | Mitsubishi Electric Corp | 半導体集積回路装置および半導体集積回路装置の製造方法 |
JP2002093957A (ja) * | 2000-09-11 | 2002-03-29 | Sony Corp | 電子回路装置およびその製造方法 |
JP4022758B2 (ja) * | 2003-03-31 | 2007-12-19 | 株式会社デンソー | 半導体装置 |
JP4338620B2 (ja) * | 2004-11-01 | 2009-10-07 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP4816214B2 (ja) * | 2006-04-13 | 2011-11-16 | 株式会社デンソー | 半導体装置及びその製造方法 |
JP2011249484A (ja) * | 2010-05-25 | 2011-12-08 | Panasonic Corp | 半導体装置の製造方法及び半導体装置 |
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2011
- 2011-11-15 JP JP2011249373A patent/JP5840933B2/ja active Active
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