JPWO2015107804A1 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JPWO2015107804A1 JPWO2015107804A1 JP2015557735A JP2015557735A JPWO2015107804A1 JP WO2015107804 A1 JPWO2015107804 A1 JP WO2015107804A1 JP 2015557735 A JP2015557735 A JP 2015557735A JP 2015557735 A JP2015557735 A JP 2015557735A JP WO2015107804 A1 JPWO2015107804 A1 JP WO2015107804A1
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- circuit board
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
- 239000011347 resin Substances 0.000 claims abstract description 102
- 229920005989 resin Polymers 0.000 claims abstract description 102
- 238000005192 partition Methods 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000027455 binding Effects 0.000 description 1
- 238000009739 binding Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- -1 polybutylene terephthalate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
2a、2b 半導体チップ
4a、4b 金属端子
4c 金属端子の脚部
4d 金属端子の軸部
4e 金属端子のヒンジ部
5 樹脂枠体
5a 桟部
5b 開口部
5c 枠部
5d 樹脂枠体側の係合部
5e 段差部
6 貫通孔
7、7a ボンディングワイヤ(導電部材)
8 上蓋
8a 柱状部
8b 隔壁部
8c 蓋部
8d 上蓋側の係合部
9 絶縁回路基板
9a 回路パターン
200 半導体モジュール
201 絶縁回路基板
203 半導体チップ
204 外部導出金属端子
205a 樹脂ケース
205b 上蓋
205c 壁
Claims (5)
- 半導体チップを備えた複数の絶縁回路基板と、
前記絶縁回路基板の外縁部のうち隣接する絶縁回路基板と対向する第1外縁部に当接する桟部、および前記絶縁回路基板の外縁部から前記第1外縁部を除いた第2外縁部に当接する枠部を持った樹脂枠体と、
前記桟部を跨いで前記絶縁回路基板間を電気的に接続する導電部材と、
前記樹脂枠体の上部の開口を覆う蓋部、および前記蓋部の前記回路基板と対向する面から突出し前記桟部の一部に当接する隔壁部を持った上蓋と、
を備えることを特徴とする半導体モジュール。 - 前記上蓋が、前記蓋部の前記絶縁回路基板と対向する面から突出して絶縁回路基板に当接する柱状部を備えることを特徴とする請求項1に記載の半導体モジュール。
- 前記樹脂枠体は、
該樹脂枠体の内壁に沿って配設された段差部を備え、
軸部と、脚部と、前記軸部又は前記脚部よりも狭い幅で前記軸部と前記脚部を連結する屈曲されたヒンジ部とを持った金属端子を備え、
前記脚部が前記段差部の上段面上に配置されていることを特徴とする請求項1または2に記載の半導体モジュール。 - 前記金属端子が、前記軸部の一部と前記脚部の一部とを露出した状態で、前記樹脂枠体の枠部に埋設されていることを特徴とする請求項1から3のいずれか一項に記載の半導体モジュール。
- 半導体チップを備えた複数の絶縁回路基板と、前記絶縁回路基板の外縁部のうち隣接する絶縁回路基板と対向する第1外縁部に当接する桟部、および前記絶縁回路基板の外縁部から前記第1外縁部を除いた第2外縁部に当接する枠部を持った樹脂枠体と、前記桟部を跨いで前記絶縁回路基板間を電気的に接続する導電部材と、前記樹脂枠体の上部の開口を覆う蓋部、および前記蓋部の前記絶縁回路基板と対向する面から突出し前記桟部の一部に当接する隔壁部を持った上蓋とを備えた半導体モジュールの製造方法であって、
前記桟部が前記第1外縁部に当接され、前記枠部が前記第2外縁部に当接されるように、前記絶縁回路基板と前記樹脂枠体とを配置する第1工程と、
前記桟部を跨いで前記絶縁回路基板間を前記導電部材で電気的に接続する第2工程と、
前記上蓋の前記蓋部が前記樹脂枠体上部の開口を覆い、前記上蓋の前記隔壁部が前記桟部の一部に当接するように、前記上蓋を前記樹脂枠体に固定する第3工程と、
を備えることを特徴とする半導体モジュールの製造方法。
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