JP6356550B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6356550B2 JP6356550B2 JP2014183972A JP2014183972A JP6356550B2 JP 6356550 B2 JP6356550 B2 JP 6356550B2 JP 2014183972 A JP2014183972 A JP 2014183972A JP 2014183972 A JP2014183972 A JP 2014183972A JP 6356550 B2 JP6356550 B2 JP 6356550B2
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- 239000004065 semiconductor Substances 0.000 title claims description 144
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 211
- 229920005989 resin Polymers 0.000 claims description 79
- 239000011347 resin Substances 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 20
- 230000014509 gene expression Effects 0.000 claims description 6
- 238000007789 sealing Methods 0.000 description 43
- 238000004382 potting Methods 0.000 description 30
- 238000001816 cooling Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 17
- 239000004519 grease Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000004734 Polyphenylene sulfide Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229920001707 polybutylene terephthalate Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 description 3
- 229920002292 Nylon 6 Polymers 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- -1 polybutylene terephthalate Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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Description
図1は本発明の実施の形態1による半導体装置の断面模式図である。図2は図1に示した半導体装置の上面図であり、説明のためダイレクトポッティング封止樹脂(ダイレクトポッティングにより形成された封止樹脂、以下単に封止樹脂とも呼ぶ)の表示を省略している。
図1および図2を参照して、半導体装置は、絶縁基板1(以下、基板1とも呼ぶ)と、半導体素子としてのパワー半導体素子3と、ケース51と、ケース51内に充填されている樹脂としてのダイレクトポッティング封止樹脂6(以下、単に封止樹脂6とも呼ぶ)とを主に備える。半導体装置はさらに、半導体装置の外部に位置する外部部材の一例である冷却部材としての冷却器54にケース51を固定する固定部材としてのネジ52を備える。絶縁基板1の厚みをt1、ダイレクトポッティング封止樹脂6の厚みをt2、絶縁基板1の線膨張係数をα1、ダイレクトポッティング封止樹脂6の線膨張係数をα2とした場合に、半導体装置はt2≧t1、およびα2≧α1、という関係式を満足する。絶縁基板1は、パワー半導体素子3が配置された第1の面と反対側の第2の面が凸形状となるように反っている。
図3は、図1および図2に示した半導体装置の製造方法を示すフローチャートである。図4〜図6は、図3に示した製造方法を説明するための断面模式図である。以下、図3〜図6を参照して、半導体装置の製造方法を説明する。
図9は本発明の実施の形態2による半導体装置の断面模式図である。
半導体装置は、基本的には図1に示した半導体装置と同様の構成を備えるが、ネジ52によりケース51および絶縁基板1を固定する部分の構成が図1に示した半導体装置とは異なっている。すなわち、ケース51は、平面視において絶縁基板1の外縁と重なる部分としてのスリーブ部53を有している。スリーブ部53の下にまで絶縁基板1の外縁が伸びている。また異なる観点からいえば、図1の半導体装置では段差部511がスリーブ部53より内周側に形成されていたのに対して、図9に示した半導体装置では段差部511はスリーブ部53に形成されている。スリーブ部53と絶縁基板1の外縁とを貫通するように貫通穴が形成されている。スリーブ部53および絶縁基板1の外縁を冷却器54と固定するように、固定部材としてのネジ52が貫通穴を挿通した状態で固定されている。
図9に示した半導体装置の製造方法は、準備する絶縁基板1やケース51のサイズや形状などが図1に示した半導体装置とは異なっているが、基本的には図1に示した半導体装置の製造方法と同様である。
また、図10に示すように、ダイレクトポッティング封止樹脂6のもれを防止するために、ケース51と絶縁基板1の接触部分に接着剤27を塗布しても同様の効果が得られる。図10は、図9に示した半導体装置の変形例を示す断面模式図である。図10を参照して、半導体装置は、基本的には図9に示した半導体装置と同様の構成を備えるが、ケース51と絶縁基板1との接触部分に接着剤27が配置されている点が異なる。接着剤27は、絶縁基板1の貫通穴14の内側において絶縁基板1の外縁に沿って環状に配置されている。このような接着剤27を配置することにより、ケース51と絶縁基板1の外縁とが確実に接続されるので、上述の樹脂封止工程(S20)においてケース51と絶縁基板1との接続部から封止樹脂6が漏れるといった問題の発生確率を低減できる。
Claims (2)
- 半導体装置であって、
絶縁基板と、
前記絶縁基板の第1の面上に配置された半導体素子と、
前記半導体素子を内側に収容するように前記絶縁基板と接続されたケースと、
前記ケースの内側に前記半導体素子を埋め込むように充填された樹脂とを備え、
前記絶縁基板の厚みをt1、前記樹脂の厚みをt2、前記絶縁基板の線膨張係数をα1、前記樹脂の線膨張係数をα2とした場合に、
t2≧t1、および
α2≧α1、という関係式を満足し、
前記絶縁基板は前記第1の面と反対側の第2の面が凸形状となるように反っており、
前記ケースは、平面視において前記絶縁基板の外縁と重なる部分を有し、
前記ケースの前記重なる部分と前記絶縁基板の前記外縁とを貫通する貫通穴が形成されており、
前記重なる部分および前記絶縁基板の前記外縁を前記半導体装置の外部に位置する外部部材と固定するように、前記貫通穴を挿通した状態で配置された固定部材をさらに備える、半導体装置。 - 半導体装置の製造方法であって、
絶縁基板の第1の面上に半導体素子を配置するとともに、前記半導体素子を内部に収容するように前記絶縁基板と接続されたケースを準備する工程と、
前記ケースの内部に前記半導体素子を埋め込むように樹脂を充填する工程とを備え、
前記絶縁基板の厚みをt1、前記樹脂の厚みをt2、前記絶縁基板の線膨張係数をα1、前記樹脂の線膨張係数をα2とした場合に、
t2≧t1、および
α2≧α1、という関係式を満足し、
前記樹脂を充填する工程の後、前記絶縁基板の前記第1の面と反対側の第2の面が凸形状となるように反っており、
前記樹脂を充填する工程の後、前記絶縁基板の前記第1の面と反対側の前記第2の面を前記半導体装置の外部に位置する外部部材に接続する工程をさらに備え、
前記準備する工程において、前記ケースは、平面視において前記絶縁基板の外縁と重なる部分を有し、
前記ケースの前記重なる部分と前記絶縁基板の前記外縁とを貫通する貫通穴が形成されており、
前記接続する工程において、前記重なる部分および前記絶縁基板の前記外縁を前記外部部材に固定するように、前記貫通穴を挿通した状態で固定部材を配置する、半導体装置の製造方法。
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JP3225457B2 (ja) | 1995-02-28 | 2001-11-05 | 株式会社日立製作所 | 半導体装置 |
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JP2002315357A (ja) | 2001-04-16 | 2002-10-25 | Hitachi Ltd | インバータ装置 |
JP2006100640A (ja) | 2004-09-30 | 2006-04-13 | Hitachi Metals Ltd | セラミックス回路基板及びこれを用いたパワー半導体モジュール |
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JP5285347B2 (ja) * | 2008-07-30 | 2013-09-11 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 回路装置 |
US8237260B2 (en) * | 2008-11-26 | 2012-08-07 | Infineon Technologies Ag | Power semiconductor module with segmented base plate |
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