CN113454774A - 封装芯片及封装芯片的制作方法 - Google Patents

封装芯片及封装芯片的制作方法 Download PDF

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Publication number
CN113454774A
CN113454774A CN201980092147.9A CN201980092147A CN113454774A CN 113454774 A CN113454774 A CN 113454774A CN 201980092147 A CN201980092147 A CN 201980092147A CN 113454774 A CN113454774 A CN 113454774A
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bracket
cover plate
chip
support
substrate
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CN201980092147.9A
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CN113454774B (zh
Inventor
郑见涛
赵南
蒋尚轩
胡骁
陶军磊
江宇
吕建标
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737Organic materials with or without a thermoconductive filler
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本申请实施例公开了一种封装芯片及封装芯片的制作方法,该封装芯片包括:基板、芯片、和散热器;所述散热器包括第一支架、第二支架和盖板,所述第一支架和所述第二支架设置在所述基板上,所述盖板被所述第一支架和所述第二支架支撑于所述基板上;所述第一支架为密封的环形支架,所述第一支架和所述盖板围成第一空间,所述芯片被容纳在所述第一空间内,所述芯片和所述盖板之间设置有热界面材料,所述盖板上设置有与所述第一空间相通的孔,所述孔和所述第一空间中被充满填充材料;所述第二支架位于所述第一空间外部。

Description

PCT国内申请,说明书已公开。

Claims (11)

  1. PCT国内申请,权利要求书已公开。
CN201980092147.9A 2019-03-29 2019-03-29 封装芯片及封装芯片的制作方法 Active CN113454774B (zh)

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PCT/CN2019/080673 WO2020199043A1 (zh) 2019-03-29 2019-03-29 封装芯片及封装芯片的制作方法

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CN113454774A true CN113454774A (zh) 2021-09-28
CN113454774B CN113454774B (zh) 2023-03-03

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US (1) US20220020659A1 (zh)
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WO (1) WO2020199043A1 (zh)

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Publication number Priority date Publication date Assignee Title
US11350220B2 (en) * 2020-01-17 2022-05-31 Sae Magnetics (H.K.) Ltd. MEMS package, MEMS microphone and method of manufacturing the MEMS package
CN113380725A (zh) * 2021-04-29 2021-09-10 苏州通富超威半导体有限公司 芯片封装结构及封装方法
TWI774357B (zh) * 2021-05-07 2022-08-11 宏齊科技股份有限公司 具有高散熱效能的半導體裝置
CN113363219B (zh) * 2021-05-11 2024-02-06 苏州通富超威半导体有限公司 一种bga产品、热压设备及热压工艺
WO2023085607A1 (ko) * 2021-11-09 2023-05-19 삼성전자주식회사 열 전도성 계면 물질을 수용하는 인쇄 회로 기판 구조체를 포함하는 전자 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587882A (en) * 1995-08-30 1996-12-24 Hewlett-Packard Company Thermal interface for a heat sink and a plurality of integrated circuits mounted on a substrate
CN101556940A (zh) * 2008-04-08 2009-10-14 力成科技股份有限公司 具有散热片的半导体封装结构
CN101989585A (zh) * 2009-07-30 2011-03-23 台湾积体电路制造股份有限公司 微电子封装体
CN102449759A (zh) * 2011-09-30 2012-05-09 华为技术有限公司 一种散热器
US20150170990A1 (en) * 2013-12-18 2015-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor package using carbon nano material in molding compound
CN108511404A (zh) * 2017-02-28 2018-09-07 华为技术有限公司 芯片封装系统

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587882A (en) * 1995-08-30 1996-12-24 Hewlett-Packard Company Thermal interface for a heat sink and a plurality of integrated circuits mounted on a substrate
CN101556940A (zh) * 2008-04-08 2009-10-14 力成科技股份有限公司 具有散热片的半导体封装结构
CN101989585A (zh) * 2009-07-30 2011-03-23 台湾积体电路制造股份有限公司 微电子封装体
CN102449759A (zh) * 2011-09-30 2012-05-09 华为技术有限公司 一种散热器
US20150170990A1 (en) * 2013-12-18 2015-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor package using carbon nano material in molding compound
CN108511404A (zh) * 2017-02-28 2018-09-07 华为技术有限公司 芯片封装系统

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WO2020199043A1 (zh) 2020-10-08
US20220020659A1 (en) 2022-01-20

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