CN101989585A - 微电子封装体 - Google Patents

微电子封装体 Download PDF

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CN101989585A
CN101989585A CN2010102432247A CN201010243224A CN101989585A CN 101989585 A CN101989585 A CN 101989585A CN 2010102432247 A CN2010102432247 A CN 2010102432247A CN 201010243224 A CN201010243224 A CN 201010243224A CN 101989585 A CN101989585 A CN 101989585A
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substrate
chip
cover plate
packaging body
wall
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林柏尧
林文益
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明提供一种微电子封装体，在一实施例中，微电子封装体包括一芯片，具有一第一表面和一第二表面，第一表面耦接至一基板；一热界面材料，与芯片的第二表面导热接触；一散热器，用来消散芯片的热量，散热器与界面材料导热接触，散热器包括一盖板，具有由一第一墙和第二墙定义的内部腔室，第二墙牢固地接合第一墙，以密封腔室，盖板固接至基板；及一吸收层，位于腔室中。本发明可改善倒装芯片微电子封装体消散芯片或其它电子组件产生热的能力，使元件热点上的热能散布至较大的表面区域。

Description

微电子封装体
技术领域
本发明涉及一种微电子元件封装体，尤其涉及一种微电子元件的散热器。
背景技术
随着微电子元件的封装密度依技术发展增加，业界持续的缩小微电子元件的尺寸，以满足微小电子元件与日俱增的需求。先进微电子元件的另一趋势是增加高耗能电路(例如先进的中央微处理器芯片)的使用。为了配合高密度封装和高耗能微电子元件，需要改进传统倒装芯片封装体(例如球栅格阵列和基板栅格阵列)的散热特性。
业界一般使用高导热材料(例如铜)的散热器(heat sink或heat spreader)，以满足改善倒装芯片散热封装体的需求。虽然铜因其高导热性，成为散热器的盖板(lid)的解决方案，倒装芯片封装体的铜盖板和低热膨胀系数的陶瓷基板间存在有热膨胀系数(coefficient of thermal expansion，CTE)不一致的问题。这两个材料的热膨胀系数不一致，导致散热盖板和陶瓷基板间粘合区的应力集中，造成散热盖板和陶瓷基板间分层(delamination)的风险。为了解决热膨胀系数不一致的问题，业界提出使用低热膨胀系数金属或金属/陶瓷复合材料(例如铜化钨CuW或AlSiC)，然而，这些材料由于热导率相对较低，散热效能并不如铜。
使用更密集的微电子封装体、高效能中央微处理器(导致芯片局部区域产生高热量，例如热点(hot spots)，脆弱的极低介电常数(extreme low k，ELK)介电层和无铅凸块均增加了介电层破裂，和散热盖板和陶瓷基板间分层的风险。因此，可增加散热效能并解决热膨胀系数不一致的散热器，变得更具有关键性。
因此，先进集成电路(IC)封装体(例如倒装芯片封装)需要一种改良的散热器，以避免传统散热器分层和热膨胀系数不一致的问题。
发明内容
为了解决现有技术的问题，本发明提供一种微电子封装体，包括一芯片，具有一第一表面和一第二表面，第一表面耦接至一基板；一热界面材料，与芯片的第二表面导热接触；一散热器，用来消散芯片的热量，散热器与界面材料导热接触，散热器包括一盖板，具有由一第一墙和第二墙定义的内部腔室，第二墙牢固地接合第一墙，以密封腔室，盖板固接至基板；及一吸收层，位于腔室中。
本发明提供一种微电子封装体，包括一芯片，具有一第一表面和一第二表面，第一表面耦接至一基板；一热界面材料，与芯片的第二表面导热接触；一散热器，用来消散芯片的热量，散热器与热界面材料导热接触，散热器包括一盖板，具有由一第一墙和一第二墙所定义的内部腔室，第二墙牢固地接合第一墙，以密封腔室，盖板固接至基板；一固接凸缘，紧固至基板，固接凸缘具有至少一紧固装置，将盖板紧固至固接凸缘；一工作流体，包含于腔室中；及一吸收层，位于腔室中，吸收层用来容纳工作流体。
本发明提供一种微电子封装体的制作方法，包括以下步骤：将一芯片耦接至一基板；设置一热界面材料于芯片的顶部表面；提供一用来消散芯片的散热器，散热器与热界面材料导热接触，散热器包括：将基板固接一盖板，盖板具有一第一墙和一第二墙定义的内部腔室，第二墙牢固地接合第一墙，以密封腔室；一工作流体，包含于腔室中；及一吸收层，位于腔室中，吸收层用来容纳工作流体。
本发明可改善倒装芯片微电子封装体消散芯片或其它电子组件产生热的能力，使元件热点上的热能散布至较大的表面区域。
为让本发明的上述目的、特征及优点能更明显易懂，下文特举一优选实施例，并配合所附附图，作详细说明如下：
附图说明
图1显示本发明一实施例具有散热器的微电子封装体5的剖面图。
图2显示图1的展开图。
图3显示本发明另一实施例具有散热器的微电子封装体的剖面图。
其中，附图标记说明如下：
5～微电子封装体；10～基板；
20～芯片；30～焊料凸块；
40～底填充材料；50～热界面材料；
60～散热器；61～盖板；
62～顶墙；64～底墙；
65～腔室；67～吸收层；
70～安装架；72～固接凸缘；
75～粘着物；80～紧固装置。
具体实施方式
在以下的叙述中提供各特定细节，以完全的了解本发明的实施例，然而，本领域普通技术人员可不根据上述特定细节实行本发明的实施例。以下一些范例没有叙述已知的结构和工艺，避免本发明实施例不必要的混淆。
本发明全部说明书中所述的“一实施例”指与本发明一实施例相关的特定图样、结构或特征。因此，本发明说明书中，各处出现的“在一实施例中”不必然代表同一实施例。更进一步说明，在一或其它的实施例中，特定图样、结构或特征可用适合的方法结合。可理解的是，以下附图没有依比例绘制，这些附图仅用来揭示本发明。
图1是本发明一实施例具有散热器的微电子封装体5的剖面图。微电子封装体5可包括一具有相反的第一表面和第二表面的芯片20，第一表面包含多个电接点，电性连接有源电路，以作特定应用。芯片20的第一表面可使用例如铜柱或焊料凸块30的接合构件，电性耦接的方式固接于一载板上，其是以倒装芯片的方式将芯片20的第一表面固接于基板10上。基板10的适合材料包括(但不限定于)与环氧树脂接合的玻璃和有机基板，例如包括一玻璃环氧树脂，或包括玻璃-聚亚酰胺为主铜导线核心层。一例如环氧树脂的底填充材料40可填入芯片20和基板10间的间隙并将其密封，借以将焊料凸块30封入。底填充材料40提供接合构件(例如焊料凸块)的机械支撑、电性隔离，并保护有源电路不受环境的损坏。虽然图中未显示，基板10也可借由焊锡球、插口(socket)或其它内连线结构，电性耦接芯片20至一外部电路或印刷电路板。
微电子封装体5也可包括与芯片20第二表面导热接触的热界面材料50(thermalinterface material，TIM)。散热器60可热接触热界面材料50。提供热界面材料50作为芯片20和散热器60之间的界面是有益的，其包括但不限定于改进微电子封装体成品5的热导率和减少芯片20损坏的风险。因为芯片20和散热器60的表面是不平坦的，将散热器60直接放置于芯片20上，可能会导致复合组件热阻的增加，于其间设置适合的热界面材料50是调平散热器60和芯片20的接面，以改进热导率。此外，芯片20的损坏率可能会因散热器60厚度的变化而增加，且在一些情况中，散热器60会导致芯片20多余的压力。提供热界面材料50于散热器60和芯片20之间，可缓和散热器60于芯片20上施加的压力。适合的热界面材料50应具有高热导率，且当其位于散热器60和芯片20之间，应可改善热接触。适合的热界面材料50的范例包括(但不限定于)导热膏(thermal grease)，例如填入有银的环氧树脂或类似的材料、树脂焊锡混合热界面材料和铟箔(indium foil)。热界面材料50的厚度可依照芯片20的效能需求改变。在一实施例中，热界面材料50的厚度约为50μm～100μm。
请继续参照图1，散热器60热接触热界面材料50，散热器60包括一盖板61，散热器60中具有由外墙(或顶墙)62和内墙(或底墙)64所定义的内气体腔室65，底墙64沿着共用的边缘贴合顶墙62，以在其接合处密封腔室65。根据本发明，气体腔室65在整个盖板61中作横向和纵向的延伸。在一实施例中，顶墙62和底墙64包括大体上厚度均匀的热导片，且分隔约0.5mm～1mm，以于其间形成一孔隙或气体腔室65。在一些实施例中，气体腔室65的深度及/或宽度沿特定的方向变化(例如变窄或变宽)。
两相的可气化的液体位于腔室65中，且作为散热器60的工作流体(working fluid，WF)。工作流体可包括二氯二氟代甲烷(freon)、水、醇或类似可气化和包含相对较高的潜热，以消散来自于芯片20的热量。
盖板61具有高热导率或低的热膨胀系数，其类似于承载基板10的低热膨胀系数。根据本发明一实施例，盖板61包括由高热导率的金属铜或低热膨胀系数材料(例如铜合金、CuW或AlSiC)组成的顶墙62和底墙64。盖板61也可使用其它适合的材料，只要该材料具有低热膨胀系数和高热导率。盖板61的厚度取决于以下因素，包括但不限定于：芯片20的热消散速率、散热器的材料的热导率、是否有外部散热器的存在、微电子封装体成品5的需求尺寸，以及芯片20的表面积。
盖板61借由安装架70固接于基板10上，安装架70用作支撑基板10和芯片20上的盖板61。本实施例可选择安装架70的高度，使盖板61的内部表面间存在间隙。基板10的顶部表面的尺寸至少可容纳芯片20。为避免散热器60自基板10分开，安装架70具有低热膨胀系数，其类似于承载基板10的低热膨胀系数。根据本发明一实施例，安装架70的材料具有低热膨胀系数，例如铜合金、CuW或AlSiC。安装架70也可使用其它适合的材料，只要该材料具有低膨胀系数。安装架70可以制作成各种方式，包括(但不限于)图1的方式，且可制作成各种的形式或形状，再一次说明，安装架70不限于图1的样式。
盖板61借由一或是多个紧固装置80牢固地固定至安装架70。紧固装置80包括铆钉、螺栓、焊锡、粘着物或其它将盖板61紧固至安装架70的装置。安装架70借由粘着物75固接至基板。
图2显示包括散热器60的微电子封装体5的展开图。
图3显示本发明另一实施例包括散热器60的微电子封装体5的剖面图。不同于上述实施例使用安装架70将盖板61紧固至基板10，本实施例盖板61本身作为紧固的构件，和位于基板10和芯片20上的盖板61的支撑。盖板61包括沿周边边缘形成，或盖板61所有侧壁上的固接凸缘72，将盖板61紧固至基板10。固接凸缘72不限定于图3显示的样式，可用其它的形式或形状建构。
为避免散热器60和基板10的分开，固接凸缘72具有类似于承载基板10的低热膨胀系数。根据本发明一实施例，固接凸缘72包括具有低热膨胀系数的材料，例如铜合金、CuW、AlSiC或CuSiC。固接凸缘72也可使用其它适合的材料，只要该材料具有低热膨胀系数。固接凸缘借由粘着物75紧固在基板10上。
如图1和图2所示，一大体上平坦的吸收层67(wick layer)设置于腔室65中，吸收层67用来容纳工作流体。根据本发明一实施例，吸收层67大体上沿着腔室65的内部或内缘墙设置。在一些实施例中，吸收层67大体上沿着盖板61的顶墙62和底墙64的内部表面设置。吸收层67是由包含大量孔洞(未示出)的网状金属线制作，以产生用来传输工作流体的毛细力。在另一实施例中，吸收层67可由其它方法形成，例如由烧结金属粉形成。吸收层的平均厚度可约为0.1mm～0.5mm。
在操作时，当芯片20(或其它电子组件)接触散热器操作且产生热量，容纳在吸收层67中的工作流体(WF)在对应热接触的位置被加热和蒸发。蒸气V随后散布至填满蒸气腔室65，无论蒸气在何处接触腔室65的冷却表面，其释放出气化的潜热，且凝结成液态。凝结的液体经由吸收层67产生的毛细力流回热接触位置。
之后，液体频繁的经由气化和凝结的循环，借以移除芯片20或其它电子组件产生的热量。此排列有效的将热能散布至散热器60，所以热能可经由例如贴合在盖板61顶墙62的鳍片散热器(finned heat sink)或散热管排出或消散。
因此，本发明的散热器60可改善倒装芯片微电子封装体5消散芯片20(或其它电子组件)产生热的能力，使元件热点(hot spot)上的热能散布至较大的表面区域。可理解的是，散热器60可随着设计的不同而有所改变，且散热器的盖板61不限定于任何附图中的盖板结构。
虽然本发明已揭示优选实施例如上，然其并非用以限定本发明，任何本领域普通技术人员，在不脱离本发明的精神和范围内，当可做些许更动与润饰。另外，本发明不特别限定于特定说明书中描述的实施例的工艺、装置、制造方法、组成和步骤。本领域普通技术人员可根据本发明说明书的揭示，进一步发展出与本发明大体上具有相同功能或大体上可达成相同结果的工艺、装置、制造方法、组成和步骤。因此本发明的保护范围当视所附的权利要求所界定的范围为准。

Claims (10)

1.一种微电子封装体，包括：
一芯片，具有一第一表面和一第二表面，该第一表面耦接至一基板；
一热界面材料，与该芯片的第二表面导热接触；
一散热器，用来消散该芯片的热量，该散热器与该热界面材料导热接触，该散热器包括：
一盖板，具有一由第一墙和第二墙定义的内部腔室，该第二墙牢固地接合该第一墙，以密封该腔室，该盖板固接至该基板；及
一吸收层，位于该腔室中。
2.如权利要求1所述的微电子封装体，其中该芯片借由焊料凸块耦接至该基板，且该微电子封装体还包括一底填充材料，填满该芯片和该基板之间的间隙，该底填充材料大体上密封该焊料凸块。
3.如权利要求1所述的微电子封装体，其中该盖板包括铜、铜合金、CuW或AlSiC。
4.如权利要求1所述的微电子封装体，其中该盖板包括形成在该盖板所有侧壁的固接凸缘，将该盖板紧固至该基板，且该固接凸缘借由一粘着物紧固至该基板，该固接凸缘的热膨胀系数大体上等于该基板的热膨胀系数。
5.如权利要求1所述的微电子封装体，其中该盖板的热膨胀系数大体上和该基板的热膨胀系数相同。
6.如权利要求1所述的微电子封装体，其中该盖板还包括一工作流体，包含在该腔室中，该工作流体包括水、二氯二氟代甲烷或醇。
7.如权利要求1所述的微电子封装体，其中该吸收层沿着该腔室的内墙设置。
8.一种微电子封装体，包括：
一芯片，具有一第一表面和一第二表面，该第一表面耦接至一基板；
一热界面材料，导热接触该芯片的第二表面；
一散热器，用来消散该芯片的热量，该散热器与该热界面材料导热接触，该散热器包括：
一盖板，具有由一第一墙和一第二墙所定义的内部腔室，该第二墙牢固地接合该第一墙，以密封该腔室，该盖板固接至该基板；
一固接凸缘，紧固至该基板，该固接凸缘具有至少一紧固装置，将该盖板紧固至该固接凸缘；
一工作流体，包含于该腔室中；及
一吸收层，位于该腔室中，该吸收层用来容纳该工作流体。
9.如权利要求8所述的微电子封装体，其中该芯片借由焊料凸块耦接至该基板，且该微电子封装体还包括一底填充材料，填满该芯片和该基板之间的间隙，该底填充材料大体上密封该焊料凸块。
10.如权利要求8所述的微电子封装体，其中该盖板包括铜、铜合金、CuW或AlSiC。
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US20050141195A1 (en) * 2003-12-31 2005-06-30 Himanshu Pokharna Folded fin microchannel heat exchanger
CN201226636Y (zh) * 2008-07-04 2009-04-22 北京奇宏科技研发中心有限公司 一种带有蒸发腔体的液冷散热装置

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CN104136364A (zh) * 2011-12-09 2014-11-05 罗伯特·博世有限公司 微机电系统芯片尺寸封装
CN105144371A (zh) * 2013-04-29 2015-12-09 Abb技术有限公司 用于功率半导体装置的模块布置
CN106653713A (zh) * 2016-12-23 2017-05-10 北京工业大学 一种自优化散热的双腔室热管
CN106653713B (zh) * 2016-12-23 2019-06-14 北京工业大学 一种自优化散热的双腔室热管
CN109686708A (zh) * 2018-12-24 2019-04-26 中国电子科技集团公司第五十八研究所 一种气密性及非气密性封装的散热结构
CN113454774A (zh) * 2019-03-29 2021-09-28 华为技术有限公司 封装芯片及封装芯片的制作方法
CN113454774B (zh) * 2019-03-29 2023-03-03 华为技术有限公司 封装芯片及封装芯片的制作方法
CN114641177A (zh) * 2020-12-15 2022-06-17 华为技术有限公司 电子设备
WO2022127432A1 (zh) * 2020-12-15 2022-06-23 华为技术有限公司 电子设备
CN114641177B (zh) * 2020-12-15 2024-02-13 华为技术有限公司 电子设备

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