TWI434379B - 微電子封裝體及其製作方法 - Google Patents

微電子封裝體及其製作方法 Download PDF

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TWI434379B
TWI434379B TW099125308A TW99125308A TWI434379B TW I434379 B TWI434379 B TW I434379B TW 099125308 A TW099125308 A TW 099125308A TW 99125308 A TW99125308 A TW 99125308A TW I434379 B TWI434379 B TW I434379B
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wafer
substrate
microelectronic package
wall
heat sink
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TW099125308A
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TW201104806A (en
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Po Yao Lin
Wen Yi Lin
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Taiwan Semiconductor Mfg
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Description

微電子封裝體及其製作方法
本發明係有關於一種微電子元件封裝體，特別是有關於一種微電子元件之散熱器。
隨著微電子元件之封裝密度依技術發展增加，業界係持續的縮小微電子元件之尺寸，以滿足微小電子元件與日俱增的需求。先進微電子元件之另一趨勢是增加高耗能電路(例如先進的中央微處理器晶片)的使用。為了配合高密度封裝和高耗能微電子元件，需要改進傳統覆晶封裝體(例如球柵格陣列和基板柵格陣列)的散熱特性。
業界一般使用高導熱材料(例如銅)之散熱器(heat sink或heat spreader)，以滿足改善覆晶散熱封裝體的需求。雖然銅因其高導熱性，成為散熱器之蓋板(lid)的解決方案，覆晶封裝體之銅蓋板和低熱膨脹係數的陶瓷基板間存在有熱膨脹係數(coefficient of thermal expansion，CTE)不一致的問題。這兩個材料的熱膨脹係數不一致，導致散熱蓋板和陶瓷基板間黏合區的應力集中，造成散熱蓋板和陶瓷基板間分層(delamination)的風險。為了解決熱膨脹係數不一致的問題，業界提出使用低熱膨脹係數金屬或金屬/陶瓷複合材料(例如銅化鎢CuW或AlSiC)，然而，這些材料由於熱導率相對較低，散熱效能並不如銅。
使用更密集之微電子封裝體、高效能中央微處理器 (致晶片局部區域產生高熱量，例如熱點(hot spots)，脆弱的極低介電常數(extreme low k，ELK)介電層和無鉛凸塊均增加了介電層破裂，和散熱蓋板和陶瓷基板間分層的風險。因此，可增加散熱效能並解決熱膨脹係數不一致的散熱器，變得更具有關鍵性。
因此，先進積體電路(IC)封裝體(例如覆晶封裝)需要一種改良的散熱器，以避免傳統散熱器分層和熱膨脹係數不一致的問題。
本發明提供一種微電子封裝體，包括一晶片，具有一第一表面和一第二表面，第一表面耦接至一基板；一熱界面材料，與晶片之第二表面導熱接觸；一散熱器，用來消散晶片之熱量，散熱器與界面材料導熱接觸，散熱器包括一蓋板，具有由一第一牆和第二牆定義之內部腔室，第二牆牢固地接合第一牆，以密封腔室，蓋板固接至基板；及一吸收層，位於腔室中。
本發明提供一種微電子封裝體，包括一晶片，具有一第一表面和一第二表面，第一表面耦接至一基板；一熱界面材料，與晶片之第二表面導熱接觸；一散熱器，用來消散晶片之熱量，散熱器與熱界面材料導熱接觸，散熱器包括一蓋板，具有由一第一牆和一第二牆所定義之內部腔室，第二牆牢固地接合第一牆，以密封腔室，蓋板固接至基板；一固接凸緣，緊固至基板，固接凸緣具有至少一緊固裝置，將蓋板緊固至固接凸緣；一工作 流體，包含於腔室中；及一吸收層，位於腔室中，吸收層係用來容納工作流體。
本發明提供一種微電子封裝體之製作方法，包括以下步驟：將一晶片耦接至一基板；設置一熱界面材料於晶片之頂部表面；提供一用來消散晶片之散熱器，散熱器與熱界面材料導熱接觸，散熱器包括：將基板固接一蓋板，蓋板具有一第一牆和一第二牆定義之內部腔室，第二牆牢固地接合第一牆，以密封腔室；一工作流體，包含於腔室中；及一吸收層，位於腔室中，吸收層係用來容納工作流體。
為讓本發明之上述目的、特徵及優點能更明顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說明如下：
在以下的敘述中係提供各特定細節，以完全的了解本發明的實施例，然而，熟悉此技術領域的人士可不根據上述特定細節實行本發明之實施例。以下一些範例沒有敘述已知的結構和製程，避免本發明實施例不必要的混淆。
本發明全部說明書中所述之「一實施例」係指與本發明一實施例相關的特定圖樣、結構或特徵。因此，本發明說明書中，各處出現的「在一實施例中」不必然代表同一實施例。更進一步說明，在一或其它的實施例中，特定圖樣、結構或特徵可用適合的方法結合。可理解的 是，以下圖式沒有依比例繪製，這些圖式僅用來揭示本發明。
第1圖是本發明一實施例具有散熱器之微電子封裝體5的剖面圖。微電子封裝體5可包括一具有相反之第一表面和第二表面之晶片20，第一表面包含複數個電接點，電性連接主動電路，以作特定應用。晶片20之第一表面可使用例如銅柱或銲料凸塊30之接合構件，電性耦接的方式固接於一載板上，其是以覆晶之方式將晶片20之第一表面固接於基板10上。基板10之適合材料包括(但不限定於)與環氧樹脂接合之玻璃和有機基板，例如包括一玻璃環氧樹脂，或包括玻璃-聚亞醯胺為主銅導線核心層。一例如環氧樹脂之底填充材料40可填入晶片20和基板10間之間隙並將之密封，藉以將銲料凸塊30封入。底填充材料40提供接合構件(例如銲料凸塊)的機械支撐、電性隔離，並保護主動電路不受環境的損壞。雖然圖中未顯示，基板10亦可藉由銲錫球、插口(socket)或其它內連線結構，電性耦接晶片20至一外部電路或印刷電路板。
微電子封裝體5亦可包括與晶片20第二表面導熱接觸之熱界面材料50(thermal interface material，TIM)。散熱器60可熱接觸熱界面材料50。提供熱界面材料50作為晶片20和散熱器60之間的界面是有益的，其包括但不限定於改進微電子封裝體成品5之熱導率和減少晶片20損壞之風險。因為晶片20和散熱器60之表面是不平坦的，將散熱器60直接放置於晶片20上，可能會導致 複合組件熱阻的增加，於其間設置適合之熱界面材料50係調平散熱器60和晶片20之接面，以改進熱導率。此外，晶片20的損壞率可能會因散熱器60厚度的變化而增加，且在一些情況中，散熱器60會導致晶片20多餘的壓力。提供熱界面材料50於散熱器60和晶片20之間，可緩和散熱器60於晶片20上施加的壓力。適合的熱界面材料50應具有高熱導率，且當其位於散熱器60和晶片20之間，應可改善熱接觸。適合之熱界面材料50之範例包括(但不限定於)導熱膏(thermal grease)，例如填入有銀之環氧樹脂或類似的材料、樹脂銲錫混合熱界面材料和銦箔(indium foil)。熱界面材料50的厚度可依照晶片20的效能需求改變。在一實施例中，熱界面材料50的厚度約為50μm~100μm。
請繼續參照第1圖，散熱器60熱接觸熱界面材料50，散熱器60包括一蓋板61，散熱器60中具有由外牆(或頂牆)62和內牆(或底牆)64所定義之內氣體腔室65，底牆64沿著共用的邊緣貼合頂牆62，以在其接合處密封腔室65。根據本發明，氣體腔室65在整個蓋板61中作橫向和縱向的延伸。在一實施例中，頂牆62和底牆64包括大體上厚度均勻之熱導片，且分隔約0.5mm~1mm，以於其間形成一孔隙或氣體腔室65。在一些實施例中，氣體腔室65之深度及/或寬度沿特定之方向變化(例如變窄或變寬)。
兩相之可氣化的液體位於腔室65中，且作為散熱器60之工作流體(working fluid，WF)。工作流體可包括二 氯二氟代甲烷(freon)、水、醇或類似可氣化和包含相對較高的潛熱，以消散來自於晶片20的熱量。
蓋板61具有高熱導率或低的熱膨脹係數，其類似於承載基板10之低熱膨脹係數。根據本發明一實施例，蓋板61包括由高熱導率的金屬銅或低熱膨脹係數材料(例如銅合金、CuW或AlSiC)組成之頂牆62和底牆64。蓋板61亦可使用其它適合之材料，只要該材料具有低熱膨脹係數和高熱導率。蓋板61的厚度取決於以下因素，包括但不限定於：晶片20之熱消散速率、散熱器之材料的熱導率、是否有外部散熱器的存在、微電子封裝體成品5之需求尺寸，以及晶片20之表面積。
蓋板61係藉由安裝架70固接於基板10上，安裝架70係用作支撐基板10和晶片20上的蓋板61。在一實施例中，安裝架70包括一第一部分和與第一部分橫切之一第二部分，第一部分接合該蓋板61之上部，第二部分緊固至基板10。本實施例可選擇安裝架70的高度，使蓋板61之內部表面間存在間隙。基板10之頂部表面的尺寸係至少可容納晶片20。為避免散熱器60自基板10分開，安裝架70具有低熱膨脹係數，其係類似於承載基板10之低熱膨脹係數。根據本發明一實施例，安裝架70之材料具有低熱膨脹係數，例如銅合金、CuW或AlSiC。安裝架70亦可使用其它適合的材料，只要該材料具有低膨脹係數。安裝架70可以製作成各種方式，包括(但不限於)第1圖之方式，且可製作成各種的形式或形狀，再一次說明，安裝架70不限於第1圖之樣式。
蓋板61係藉由一或是多個緊固裝置80牢固地固定至安裝架70。緊固裝置80包括鉚釘、螺栓、銲錫、黏著物或其它將蓋板61緊固至安裝架70的裝置。安裝架70係藉由黏著物75固接至基板。
第2圖顯示包括散熱器60之微電子封裝體5之展開圖。
第3圖顯示本發明另一實施例包括散熱器60之微電子封裝體5的剖面圖。不同於上述實施例使用安裝架70將蓋板61緊固至基板10，本實施例蓋板61本身係作為緊固之構件，和位於基板10和晶片20上之蓋板61的支撐。蓋板61包括沿周邊邊緣形成，或蓋板61所有側壁上的固接凸緣72，將蓋板61緊固至基板10。固接凸緣72不限定於第3圖顯示的樣式，可用其它的形式或形狀建構。
為避免散熱器60和基板10的分開，固接凸緣72具有類似於承載基板10之低熱膨脹係數。根據本發明一實施例，固接凸緣72包括具有低熱膨脹係數之材料，例如銅合金、CuW、AlSiC或CuSiC。固接凸緣72亦可使用其它適合之材料，只要該材料具有低熱膨脹係數。固接凸緣係藉由黏著物75緊固在基板10上。
如第1圖和第2圖所示，一大體上平坦的吸收層67(wick layer)係設置於係設置於腔室65中，吸收層67係用來容納工作流體。根據本發明一實施例，吸收層67係大體上沿著腔室65之內部或內緣牆設置。在一些實施例中，吸收層67大體上沿著蓋板61之頂牆62和底牆64 之內部表面設置。吸收層67是由包含大量孔洞(未繪示)的網狀金屬線製作，以產生用來傳輸工作流體之毛細力。在另一實施例中，吸收層67可由其它方法形成，例如由燒結金屬粉形成。吸收層之平均厚度可約為0.1mm~0.5mm。
在操作時，當晶片20(或其它電子組件)接觸散熱器操作且產生熱量，容納在吸收層67中的工作流體(WF)在對應熱接觸的位置被加熱和蒸發。蒸氣V隨後散佈至填滿蒸氣腔室65，無論蒸氣在何處接觸腔室65之冷卻表面，其釋放出氣化之潛熱，且凝結成液態。凝結的液體經由吸收層67產生之毛細力流回熱接觸位置。
之後，液體頻繁的經由氣化和凝結的循環，藉以移除晶片20或其它電子組件產生之熱量。此排列有效的將熱能散佈至散熱器60，所以熱能可經由例如貼合在蓋板61頂牆62之鰭片散熱器(finned heat sink)或散熱管排出或消散。
因此，本發明之散熱器60可改善覆晶微電子封裝體5消散晶片20(或其它電子組件)產生熱之能力，使元件熱點(hot spot)上之熱能散佈至較大的表面區域。可理解的是，散熱器60可隨著設計的不同而有所改變，且散熱器之蓋板61不限定於任何圖式中的蓋板結構。
雖然本發明已揭露較佳實施例如上，然其並非用以限定本發明，任何熟悉此項技藝者，在不脫離本發明之精神和範圍內，當可做些許更動與潤飾。另外，本發明不特別限定於特定說明書中描述之實施例的製程、裝 置、製造方法、組成和步驟。熟悉本領域的人士可根據本發明說明書之揭示，進一步發展出與本發明大體上具有相同功能或大體上可達成相同結果之製程、裝置、製造方法、組成和步驟。因此本發明之保護範圍當視後附之申請專利範圍所界定為準。
5‧‧‧微電子封裝體
10‧‧‧基板
20‧‧‧晶片
30‧‧‧銲料凸塊
40‧‧‧底填充材料
50‧‧‧熱界面材料
60‧‧‧散熱器
61‧‧‧蓋板
62‧‧‧頂牆
64‧‧‧底牆
65‧‧‧腔室
67‧‧‧吸收層
70‧‧‧安裝架
72‧‧‧固接凸緣
75‧‧‧黏著物
80‧‧‧緊固裝置
第1圖顯示本發明一實施例具有散熱器之微電子封裝體5的剖面圖。
第2圖顯示第1圖之展開圖。
第3圖顯示本發明另一實施例具有散熱器之微電子封裝體的剖面圖。
5‧‧‧微電子封裝體
10‧‧‧基板
20‧‧‧晶片
30‧‧‧銲料凸塊
40‧‧‧底填充材料
50‧‧‧熱界面材料
60‧‧‧散熱器
61‧‧‧蓋板
62‧‧‧頂牆
64‧‧‧底牆
65‧‧‧腔室
67‧‧‧吸收層
70‧‧‧安裝架
75‧‧‧黏著物
80‧‧‧緊固裝置

Claims (9)

  1. 一種微電子封裝體，包括：一晶片，具有一第一表面和一第二表面，該第一表面耦接至一基板；一熱界面材料，與該晶片之第二表面導熱接觸；一散熱器，用來消散該晶片之熱量，該散熱器與該熱界面材料導熱接觸，該散熱器包括：一蓋板，具有一由第一牆和第二牆定義之內部腔室，該第二牆牢固地接合該第一牆，以密封該腔室，該蓋板固接至該基板；一吸收層，位於該腔室中；及一安裝架，包括一第一部分和與該第一部分橫切之一第二部分，該第一部分接合該蓋板之上部，該第二部分緊固至該基板。
  2. 如申請專利範圍第1項所述之微電子封裝體，其中該晶片藉由銲料凸塊耦接至該基板，且該微電子封裝體尚包括一底填充材料，填滿該晶片和該基板之間的間隙，該底填充材料大體上密封該銲料凸塊。
  3. 如申請專利範圍第1項所述之微電子封裝體，其中該蓋板包括銅、銅合金、CuW或AlSiC。
  4. 如申請專利範圍第1項所述之微電子封裝體，其中該蓋板之熱膨脹係數大體上和該基板之熱膨脹係數相同。
  5. 如申請專利範圍第1項所述之微電子封裝體，其中該蓋板更包括一工作流體，包含在該腔室中，該工作 流體包括水、二氯二氟代甲烷或醇。
  6. 如申請專利範圍第1項所述之微電子封裝體，其中該吸收層係沿著該腔室之內牆設置。
  7. 一種微電子封裝體，包括：一晶片，具有一第一表面和一第二表面，該第一表面耦接至一基板；一熱界面材料，導熱接觸該晶片之第二表面；一散熱器，用來消散該晶片之熱量，該散熱器與該熱界面材料導熱接觸，該散熱器包括：一蓋板，具有由一第一牆和一第二牆所定義之內部腔室，該第二牆牢固地接合該第一牆，以密封該腔室，該蓋板固接至該基板；一安裝架，包括一第一部分和與該第一部分橫切之一第二部分，該第一部分接合該蓋板之上部，該第二部分緊固至該基板；一工作流體，包含於該腔室中；及一吸收層，位於該腔室中，該吸收層係用來容納該工作流體。
  8. 如申請專利範圍第7項所述之微電子封裝體，其中該晶片藉由銲料凸塊耦接至該基板，且該微電子封裝體尚包括一底填充材料，填滿該晶片和該基板之間的間隙，該底填充材料大體上密封該銲料凸塊。
  9. 如申請專利範圍第7項所述之微電子封裝體，其中該蓋板包括銅、銅合金、CuW或AlSiC。
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