JP2009518263A5 - - Google Patents

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JP2009518263A5
JP2009518263A5 JP2008543541A JP2008543541A JP2009518263A5 JP 2009518263 A5 JP2009518263 A5 JP 2009518263A5 JP 2008543541 A JP2008543541 A JP 2008543541A JP 2008543541 A JP2008543541 A JP 2008543541A JP 2009518263 A5 JP2009518263 A5 JP 2009518263A5
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doped
aln
crystal
room temperature
impurity species
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JP5281408B2 (ja
JP2009518263A (ja
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Priority claimed from PCT/US2006/046300 external-priority patent/WO2007065018A2/en
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JP2008543541A 2005-12-02 2006-12-04 ドープされた窒化アルミニウム結晶及びそれを製造する方法 Expired - Fee Related JP5281408B2 (ja)

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US74170105P 2005-12-02 2005-12-02
US60/741,701 2005-12-02
PCT/US2006/046300 WO2007065018A2 (en) 2005-12-02 2006-12-04 Doped aluminum nitride crystals and methods of making them

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JP2012250881A Division JP5312664B2 (ja) 2005-12-02 2012-11-15 ドープされた窒化アルミニウム結晶及びそれを製造する方法

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JP2009518263A JP2009518263A (ja) 2009-05-07
JP2009518263A5 true JP2009518263A5 (OSRAM) 2010-01-28
JP5281408B2 JP5281408B2 (ja) 2013-09-04

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JP2008543541A Expired - Fee Related JP5281408B2 (ja) 2005-12-02 2006-12-04 ドープされた窒化アルミニウム結晶及びそれを製造する方法
JP2012250881A Expired - Fee Related JP5312664B2 (ja) 2005-12-02 2012-11-15 ドープされた窒化アルミニウム結晶及びそれを製造する方法
JP2013098203A Expired - Fee Related JP5436710B2 (ja) 2005-12-02 2013-05-08 ドープされた窒化アルミニウム結晶及びそれを製造する方法

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JP2013098203A Expired - Fee Related JP5436710B2 (ja) 2005-12-02 2013-05-08 ドープされた窒化アルミニウム結晶及びそれを製造する方法

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US (6) US7641735B2 (OSRAM)
EP (1) EP1954857B1 (OSRAM)
JP (3) JP5281408B2 (OSRAM)
CN (1) CN101331249B (OSRAM)
WO (1) WO2007065018A2 (OSRAM)

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