JP2016072630A - GaNを主成分とする半導体をドープするための方法 - Google Patents
GaNを主成分とする半導体をドープするための方法 Download PDFInfo
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- JP2016072630A JP2016072630A JP2015187791A JP2015187791A JP2016072630A JP 2016072630 A JP2016072630 A JP 2016072630A JP 2015187791 A JP2015187791 A JP 2015187791A JP 2015187791 A JP2015187791 A JP 2015187791A JP 2016072630 A JP2016072630 A JP 2016072630A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000002019 doping agent Substances 0.000 claims abstract description 93
- 239000012535 impurity Substances 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 58
- 238000002513 implantation Methods 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000007669 thermal treatment Methods 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 31
- 150000002500 ions Chemical class 0.000 description 15
- 239000011777 magnesium Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000004913 activation Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
Abstract
Description
シリコンを主成分とするマスクによってカバーされた、GaNを主成分とする半導体材料層を備える基板を用意することと、
p型の領域に隣接してn型の領域を形成するために、拡散によってSi型のドーパント不純物を、マスクからGaNを主成分とする半導体材料層に移すようにマスクに不純物を注入することと、
ドーパント不純物および追加のドーパント不純物を活性化するように構成された熱アニールを行うことと、を備える方法によって解決される傾向にある。
マスク3によってのみカバーされた基板1の領域でのドーパント不純物2および追加のドーパント不純物4の注入、
キャップ層5によってカバーされた基板1の領域での注入はない。
1a 支持体
1b 半導体材料層
2 ドーパント不純物
3 マスク
4 追加のドーパント不純物
5 キャップ層
Claims (14)
- pn接合を作製するためにGaNを主成分とする半導体をドープするための方法であって、下記のステップ、すなわち、
シリコンを主成分とするマスク(3)によってカバーされた、GaNを主成分とする半導体材料層(1b)を備える基板(1)を用意することと、
p型領域に隣接したn型領域を形成するために、拡散によってSi型の追加のドーパント不純物(4)を前記マスク(3)から前記GaNを主成分とする半導体材料層(1b)に移すように前記マスク(3)にドーパント不純物(2)を注入することと、
前記ドーパント不純物(2)および前記追加のドーパント不純物(4)を活性化するように構成された熱アニールを行うことと、
を備える方法。 - 前記マスク(3)が前記マスク(3)によってカバーされた領域およびカバーされていない領域を画成するように前記基板(1)を部分的にカバーする、請求項1に記載の半導体をドープするための方法。
- 前記ドーパント不純物(2)がp型である、請求項1または2のいずれか一項に記載の半導体をドープするための方法。
- 前記ドーパント不純物(2)の平均注入深さが、前記半導体材料層(1b)中に追加のドーパント不純物(4)を取り込むように前記マスク(3)と前記半導体材料層との界面から少なくとも300nmに等しい距離に位置する、請求項1ないし3のいずれか一項に記載の半導体をドープするための方法。
- 熱処理ステップの前に行われるキャップ層(5)の堆積ステップを備える、請求項1ないし4のいずれか一項に記載の半導体をドープするための方法。
- 前記キャップ層(5)の前記堆積ステップが前記ドーパント不純物(2)の前記注入ステップの前に行われる、請求項5に記載の半導体をドープするための方法。
- 前記キャップ層(5)の堆積が前記ドーパント不純物(2)および前記追加のドーパント不純物(4)の前記注入ステップの後に行われる、請求項6に記載の半導体をドープするための方法。
- 前記キャップ層(5)の材料がアルミニウム酸化物、アルミニウム窒化物、シリコン酸化物、またはSixNy型のシリコン窒化物、アモルファス・シリコンおよびHfSixOy型の化合物から選ばれる、請求項5ないし7のいずれか一項に記載の半導体をドープするための方法。
- 前記熱処理の後にエッチングすることによる前記キャップ層(5)の剥ぎ取りステップを備える、請求項5ないし8のいずれか一項に記載の半導体をドープするための方法。
- 前記注入ステップが15℃から700℃の範囲、好ましくは450℃から600℃の範囲に備えられた温度で行われる、請求項1ないし9のいずれか一項に記載の半導体をドープするための方法。
- 前記熱処理ステップが異なる持続時間および温度の少なくとも2つのアニールの組合せである、請求項1ないし10のいずれか一項に記載の半導体をドープするための方法。
- 前記アニールの少なくとも1つが1000℃を超える温度で行われる、請求項11に記載の半導体をドープするための方法。
- 前記マスク(3)の厚さが2nmから400nmの範囲に備えられた、請求項1ないし12のいずれか一項に記載の半導体をドープするための方法。
- 前記半導体材料層(1b)の厚さが5nmから10μmの範囲、好ましくは500nmから10μmの範囲に備えられた、理想的には1μmに等しい、請求項1ないし13のいずれか一項に記載の半導体をドープするための方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1459130 | 2014-09-26 | ||
FR1459130A FR3026557B1 (fr) | 2014-09-26 | 2014-09-26 | Procede de dopage d'un semi-conducteur a base de gan |
Publications (3)
Publication Number | Publication Date |
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JP2016072630A true JP2016072630A (ja) | 2016-05-09 |
JP2016072630A5 JP2016072630A5 (ja) | 2018-11-01 |
JP6847573B2 JP6847573B2 (ja) | 2021-03-24 |
Family
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JP2015187791A Active JP6847573B2 (ja) | 2014-09-26 | 2015-09-25 | GaNを主成分とする半導体をドープするための方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9496348B2 (ja) |
EP (1) | EP3001448A1 (ja) |
JP (1) | JP6847573B2 (ja) |
FR (1) | FR3026557B1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017069363A (ja) * | 2015-09-30 | 2017-04-06 | 豊田合成株式会社 | Mpsダイオードの製造方法 |
JP2017212407A (ja) * | 2016-05-27 | 2017-11-30 | 株式会社豊田中央研究所 | 半導体基板と、その調整方法と、半導体装置 |
JP2018056257A (ja) * | 2016-09-28 | 2018-04-05 | 豊田合成株式会社 | 半導体装置の製造方法 |
WO2022025080A1 (ja) * | 2020-07-29 | 2022-02-03 | 京セラ株式会社 | 半導体素子の製造方法、半導体素子及び半導体装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210151314A1 (en) * | 2017-12-19 | 2021-05-20 | Sumco Corporation | Method for manufacturing group iii nitride semiconductor substrate |
JP2023513262A (ja) * | 2020-02-11 | 2023-03-30 | クロミス,インコーポレイテッド | スパッタリングされたマグネシウム源を使用して窒化ガリウム材料中のマグネシウムを拡散させるための方法およびシステム |
US11621168B1 (en) | 2022-07-12 | 2023-04-04 | Gyrotron Technology, Inc. | Method and system for doping semiconductor materials |
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2014
- 2014-09-26 FR FR1459130A patent/FR3026557B1/fr not_active Expired - Fee Related
-
2015
- 2015-09-08 EP EP15184348.9A patent/EP3001448A1/fr not_active Withdrawn
- 2015-09-16 US US14/855,761 patent/US9496348B2/en active Active
- 2015-09-25 JP JP2015187791A patent/JP6847573B2/ja active Active
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US20120068188A1 (en) * | 2010-09-17 | 2012-03-22 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Defects Annealing and Impurities Activation in III-Nitride Compound Semiconductors |
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JP2017069363A (ja) * | 2015-09-30 | 2017-04-06 | 豊田合成株式会社 | Mpsダイオードの製造方法 |
JP2017212407A (ja) * | 2016-05-27 | 2017-11-30 | 株式会社豊田中央研究所 | 半導体基板と、その調整方法と、半導体装置 |
JP2018056257A (ja) * | 2016-09-28 | 2018-04-05 | 豊田合成株式会社 | 半導体装置の製造方法 |
WO2022025080A1 (ja) * | 2020-07-29 | 2022-02-03 | 京セラ株式会社 | 半導体素子の製造方法、半導体素子及び半導体装置 |
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JP6847573B2 (ja) | 2021-03-24 |
EP3001448A1 (fr) | 2016-03-30 |
US9496348B2 (en) | 2016-11-15 |
FR3026557B1 (fr) | 2018-03-16 |
FR3026557A1 (fr) | 2016-04-01 |
US20160093698A1 (en) | 2016-03-31 |
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