JP2018056257A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2018056257A JP2018056257A JP2016189179A JP2016189179A JP2018056257A JP 2018056257 A JP2018056257 A JP 2018056257A JP 2016189179 A JP2016189179 A JP 2016189179A JP 2016189179 A JP2016189179 A JP 2016189179A JP 2018056257 A JP2018056257 A JP 2018056257A
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Abstract
Description
主としてIII族窒化物半導体からなる半導体層は、主として窒化物で構成されるキャップ層よりも、熱膨張係数が大きい。このため、p型不純物を活性化させるための加熱工程において、キャップ層は、半導体層から、積層方向に垂直な方向にキャップ層を伸長させる力を受ける。しかし、キャップ層の上には、ブロック層が形成されている。そして、ブロック層の熱膨張係数は、キャップ層の熱膨張係数よりも大きい。その結果、表層のブロック層は、加熱工程において、キャップ層から、積層方向に垂直な方向にブロック層を縮ませる力を受ける。このため、加熱工程において、表層が、隣接する層から表層を伸長させる力を受ける態様に比べて、表層の表面から亀裂が発生する可能性が低い。加熱工程において各層を貫通する亀裂は、露出している表層の表面から発生し伸展する場合が多い。このため、上記態様によれば、加熱工程において、主としてIII族窒化物半導体からなる半導体層の上に設けられた各層を貫通する亀裂が生じにくい。
A1.半導体装置の構成:
図1は、第1実施形態における半導体装置100の構成を模式的に示す断面図である。なお、図1に示す半導体装置100の各部は、技術の理解を容易にするため、実際の寸法の割合とは異なる割合で描かれている。すなわち、図1に示す半導体装置100の各部の寸法は、実際の寸法を反映するものではない。図3〜図15ならびに図17〜図27についても同様である。
図2は、第1実施形態における半導体装置100の製造方法を示すフローチャートである。以下では、第1実施形態における半導体装置100の製造方法について説明する。
なお、図4〜図14においては、技術の理解を容易にするために、基板110に一つの半導体装置100(図1参照)が形成される態様を示す。しかし、実際には、基板110上には、互いに間隔をあけて、複数の半導体装置100が形成される。
B1.半導体装置の構成:
図15は、第2実施形態における半導体装置200の構成を模式的に示す断面図である。半導体装置200は、主として窒化ガリウム(GaN)を用いて形成されたGaN系の半導体装置である。半導体装置200は、ショットキーバリアダイオードである。半導体装置200は、電力制御に用いられ、パワーデバイスとも呼ばれる。
図16は、第2実施形態における半導体装置200の製造方法を示すフローチャートである。以下では、第2実施形態における半導体装置200の製造方法について説明する。
C1.変形例1:
(1)上記第1実施形態においては、工程P101において、まず、基板110が準備され、その後、基板110の上にn型半導体層112が形成される。また、第2実施形態においては、工程P201において、まず、基板210が準備され、その後、基板210の上にn型半導体層212が形成される。しかし、半導体層として、あらかじめn型半導体層が形成された基板を準備し、その表面からSi、Oなどの不純物を除去した後、主として窒化物で構成されるキャップ層の少なくとも一部を形成することもできる。
上記第1実施形態において、イオン注入用マスクM1は、フォトレジストからなる。また、第2実施形態においても、イオン注入用マスクM2は、フォトレジストからなる。しかし、n型半導体層にイオン注入をするためのイオン注入用マスクは、絶縁膜、金属膜、さらには、絶縁膜と金属との積層構造など、他の構造とすることができる。
(1)上記第1実施形態においては、イオン注入(図2のP103参照)は、20℃以上800℃以下の所定の温度において、行われる。また、第2実施形態においても、イオン注入(図16のP203参照)は、20℃以上800℃以下の所定の温度において、行われる。しかし、イオン注入は、15℃、950℃など、他の温度において行われることもできる。
(1)上記第1実施形態において、キャップ層Mc12は、主に窒化アルミニウム(AlN)からなる。また、第2実施形態においても、キャップ層Mc22は、主に窒化アルミニウム(AlN)からなる。しかし、スルー層の上に形成されるキャップ層は、AlGaNなど、III窒化物半導体を含む他の構成とすることもできる。キャップ層は、熱処理において、半導体層を保護することができる素材であればよい。ただし、キャップ層の熱膨張係数が半導体層の熱膨張係数よりも小さい場合に、本願発明は特に有効である。
(1)上記第1実施形態においては、ブロック層Mb1は主に酸化アルミニウム(Al2O3)から構成される。また、第2実施形態においても、ブロック層Mb2は主に酸化アルミニウム(Al2O3)から構成される。しかし、ブロック層は、窒化アルミニウムガリウム(AlGaN)、窒化ガリウム(GaN)、二酸化ジルコニウム(ZrO2)など、他の素材で構成することもできる。ブロック層は、熱処理において、半導体層を保護することができる素材であればよい。ただし、ブロック層は、窒化アルミニウムガリウム(AlGaN)、窒化ガリウム(GaN)、酸化アルミニウム(Al2O3)、二酸化ジルコニウム(ZrO2)からなる群より選ばれた少なくとも一つを含むことが好ましい。
(1)上記第1および第2実施形態においては、熱処理は、窒素(N2)を含有する雰囲気ガス中で行われる。しかし、熱処理は、アンモニア(NH3)、水素(H2)など、主として他の物質を含有するガス中で行われることもできる。ただし、熱処理は、アンモニア(NH3)または窒素(N2)を含有するガス中で行われることが好ましい。
上記第1実施形態において、ブロック層Mb1は、フッ化水素の水溶液を用いて除去される。また、第2実施形態においても、ブロック層Mb2は、フッ化水素の水溶液を用いて除去される。しかし、ブロック層は、フォトレジストで構成される場合には、フッ化水素アンモニウムとフッ化アンモニウムの混合水溶液など、他の水溶液で除去することもできる。ただし、ブロック層は、フォトレジストで構成される場合には、フッ化水素の水溶液、またはフッ化水素アンモニウムとフッ化アンモニウムの混合水溶液を使用して、除去することが好ましい。また、ブロック層は、金属を含んで構成される場合には、塩酸や、硝酸、王水を用いて除去することができる。
上記第1実施形態においては、キャップ層Mc1は、pH12のテトラメチルアンモニウム=ヒドロキシド(TMAH)を用いて、ウェットエッチングにより除去される。また、第2実施形態においても、キャップ層Mc2は、pH12のテトラメチルアンモニウム=ヒドロキシド(TMAH)を用いて、ウェットエッチングにより除去される。しかし、キャップ層は、ドライエッチングなど、他の方法で除去することもできる。
本発明は、上述の実施形態や実施例、変形例に限られるものではなく、その趣旨を逸脱しない範囲において種々の構成で実現することができる。例えば、発明の概要の欄に記載した各形態中の技術的特徴に対応する実施形態、実施例、変形例中の技術的特徴は、上述の課題の一部または全部を解決するために、あるいは、上述の効果の一部または全部を達成するために、適宜、差し替えや、組み合わせを行うことが可能である。また、その技術的特徴が本明細書中に必須なものとして説明されていなければ、適宜、削除することが可能である。
110…基板
111…GaN層
112…n型半導体層
113…p型半導体領域
113p…p型不純物を活性化させる前のp型半導体領域
114…p型半導体層
116…n型半導体層
122…トレンチ
124…リセス
130…絶縁膜
142…ゲート電極
144…ボディ電極
146…ソース電極
148…ドレイン電極
200…半導体装置
210…基板
211…GaN層
212…n型半導体層
212m…突出部
213…p型半導体領域
213p…p型不純物を活性化させる前のp型半導体領域
222…メサ部
251…アノード電極
252…カソード電極
253…絶縁膜
M1,M2…イオン注入用マスク
Mb1,Mb2…ブロック層
Mc1,Mc2…キャップ層
Mc11,Mc21…キャップ層(スルー膜)
Mc12,Mc22…キャップ層
Mt11,Mt21…スルー膜(キャップ層)
Pp101〜Pp112…半導体装置100の製造工程における中間品
Pp201〜Pp211…半導体装置100の製造工程における中間品
Claims (11)
- 半導体装置の製造方法であって、
主としてIII族窒化物半導体からなる半導体層の上に、主として窒化物で構成されるキャップ層の少なくとも一部を形成する工程と、
前記キャップ層の少なくとも一部が形成された半導体層にp型不純物をイオン注入する工程と、
表層として、前記キャップ層よりも熱膨張係数が大きいブロック層を、前記キャップ層の上に形成する工程と、
前記表層としての前記ブロック層が形成された半導体層を加熱してp型不純物を活性化させる工程と、を含む、方法。 - 請求項1記載の半導体装置の製造方法であって、
前記半導体層にp型不純物をイオン注入する工程において、前記キャップ層の少なくとも一部の厚さは、1.0nmから50nmである、方法。 - 請求項1または2記載の半導体装置の製造方法であって、
前記ブロック層を形成する工程において、
前記ブロック層の厚さは、前記半導体層の厚さよりも小さく、
前記ブロック層の熱膨張係数は、前記半導体層の熱膨張係数よりも大きい、方法。 - 請求項1から3のいずれか1項に記載の半導体装置の製造方法であって、
前記半導体層を加熱する工程は、加圧された環境下で行われる、方法。 - 請求項1から4のいずれか1項に記載の半導体装置の製造方法であって、さらに、
前記キャップ層の少なくとも一部を形成する工程に先だって、前記半導体層を成長させる工程を含み、
前記キャップ層の少なくとも一部を形成する工程は、前記半導体層を成長させる工程と連続して行われる、方法。 - 請求項1から5のいずれか1項に記載の半導体装置の製造方法であって、
前記ブロック層は、窒化アルミニウムガリウム(AlGaN)、窒化ガリウム(GaN)、酸化アルミニウム(Al2O3)、二酸化ジルコニウム(ZrO2)からなる群より選ばれた少なくとも一つを含む、方法。 - 請求項1から6のいずれか1項に記載の半導体装置の製造方法であって、
前記p型不純物は、マグネシウム(Mg)とベリリウム(Be)の少なくとも一方である、方法。 - 請求項1から7のいずれか1項に記載の半導体装置の製造方法であって、
前記イオン注入する工程は、20℃から800℃で行われる、方法。 - 請求項1から8のいずれか1項に記載の半導体装置の製造方法であって、
前記半導体層を加熱する工程において、雰囲気ガスは、アンモニア(NH3)、窒素(N2)、水素(H2)からなる群より選ばれた少なくとも一つを含む、方法。 - 請求項1から9のいずれか1項に記載の半導体装置の製造方法であって、
前記半導体層を加熱する工程は、800℃から1500℃で行われる、方法。 - 請求項10記載の半導体装置の製造方法であって、
前記半導体層を加熱する工程は、1分から60分の間、800℃から1500℃で行われる、方法。
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