JP2009510765A5 - - Google Patents

Download PDF

Info

Publication number
JP2009510765A5
JP2009510765A5 JP2008533300A JP2008533300A JP2009510765A5 JP 2009510765 A5 JP2009510765 A5 JP 2009510765A5 JP 2008533300 A JP2008533300 A JP 2008533300A JP 2008533300 A JP2008533300 A JP 2008533300A JP 2009510765 A5 JP2009510765 A5 JP 2009510765A5
Authority
JP
Japan
Prior art keywords
layer
seed
thermal expansion
seed layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008533300A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009510765A (ja
Filing date
Publication date
Priority claimed from SG200506301-1A external-priority patent/SG130975A1/en
Application filed filed Critical
Publication of JP2009510765A publication Critical patent/JP2009510765A/ja
Publication of JP2009510765A5 publication Critical patent/JP2009510765A5/ja
Withdrawn legal-status Critical Current

Links

JP2008533300A 2005-09-29 2006-09-01 発光用の半導体デバイスの製造 Withdrawn JP2009510765A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG200506301-1A SG130975A1 (en) 2005-09-29 2005-09-29 Fabrication of semiconductor devices for light emission
PCT/SG2006/000254 WO2007037762A1 (en) 2005-09-29 2006-09-01 Fabrication of semiconductor devices for light emission

Publications (2)

Publication Number Publication Date
JP2009510765A JP2009510765A (ja) 2009-03-12
JP2009510765A5 true JP2009510765A5 (enExample) 2009-10-15

Family

ID=37900068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008533300A Withdrawn JP2009510765A (ja) 2005-09-29 2006-09-01 発光用の半導体デバイスの製造

Country Status (8)

Country Link
US (1) US8004001B2 (enExample)
EP (1) EP1949458A4 (enExample)
JP (1) JP2009510765A (enExample)
KR (1) KR20080070640A (enExample)
CN (1) CN101317278B (enExample)
SG (1) SG130975A1 (enExample)
TW (1) TWI413277B (enExample)
WO (1) WO2007037762A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101335320B (zh) 2003-09-19 2012-06-06 霆激科技股份有限公司 用于制作发光器件的方法
EP1730790B1 (en) 2004-03-15 2011-11-09 Tinggi Technologies Private Limited Fabrication of semiconductor devices
US8309377B2 (en) 2004-04-07 2012-11-13 Tinggi Technologies Private Limited Fabrication of reflective layer on semiconductor light emitting devices
SG131803A1 (en) 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
SG133432A1 (en) 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
SG148895A1 (en) 2007-07-04 2009-01-29 Tinggi Technologies Private Ltd Separation of semiconductor devices for light emission
WO2009005477A1 (en) * 2007-07-04 2009-01-08 Tinggi Technologies Private Limited Separation of semiconductor devices
DE102008021403A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
GB0721957D0 (en) 2007-11-08 2007-12-19 Photonstar Led Ltd Ultra high thermal performance packaging for optoelectronics devices
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
KR100973259B1 (ko) * 2008-02-22 2010-08-02 한국산업기술대학교산학협력단 측부 반사판을 갖는 수직구조 질화갈륨계 ｌｅｄ 소자 및그 제조방법
JP5123269B2 (ja) 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR100962899B1 (ko) * 2008-10-27 2010-06-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWI389347B (zh) * 2008-11-13 2013-03-11 晶元光電股份有限公司 光電元件及其製作方法
KR101543328B1 (ko) * 2008-11-18 2015-08-11 삼성전자주식회사 발광 소자 및 발광 소자의 제조 방법
KR100999793B1 (ko) * 2009-02-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 제조방법
US8173456B2 (en) * 2009-07-05 2012-05-08 Industrial Technology Research Institute Method of manufacturing a light emitting diode element
US8587017B2 (en) * 2009-07-05 2013-11-19 Industrial Technology Research Institute Light emitting device and method of fabricating a light emitting device
CN102255013B (zh) * 2011-08-01 2013-09-04 华灿光电股份有限公司 一种通过湿法剥离GaN基外延层和蓝宝石衬底来制备垂直结构发光二极管的方法
EP4557917A3 (en) 2011-09-16 2025-08-06 Seoul Viosys Co., Ltd. Light emitting diode and method for manufacturing same
JP2013105975A (ja) * 2011-11-16 2013-05-30 Mitsubishi Electric Corp 光半導体装置の製造方法
TW201344869A (zh) * 2012-04-18 2013-11-01 穩懋半導體股份有限公司 半導體元件背面銅金屬之改良結構及其製程方法
US9548276B2 (en) 2012-04-18 2017-01-17 Win Semiconductors Corp. Structure of backside copper metallization for semiconductor devices and a fabrication method thereof
US9450152B2 (en) 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
JP2014187323A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 半導体発光装置
US10665451B2 (en) 2015-10-20 2020-05-26 King Abdullah University Of Science And Technology Nanowires-based light emitters on thermally and electrically conductive substrates and of making same
WO2017195118A1 (en) 2016-05-10 2017-11-16 King Abdullah University Of Science And Technology Light emitters on transition metal dichalcogenides directly converted from thermally and electrically conductive substrates and method of making the same
CN108242387B (zh) * 2016-12-23 2021-03-05 财团法人工业技术研究院 半导体基板结构
US10910514B1 (en) * 2018-10-05 2021-02-02 Facebook Technologies, Llc Molded etch masks

Family Cites Families (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3848490A (en) 1973-11-02 1974-11-19 Gerber Garment Technology Inc Method and apparatus for controlling a cutting tool
US3897627A (en) * 1974-06-28 1975-08-05 Rca Corp Method for manufacturing semiconductor devices
CA1027257A (en) * 1974-10-29 1978-02-28 James A. Benjamin Overlay metallization field effect transistor
JPS5831751B2 (ja) 1975-10-31 1983-07-08 松下電器産業株式会社 半導体レ−ザの製造方法
JPS59112667A (ja) 1982-12-17 1984-06-29 Fujitsu Ltd 発光ダイオ−ド
GB2215350B (en) 1988-03-16 1992-05-20 Thiokol Morton Inc Process for bleaching mechanical wood pulp
JPH0478186A (ja) 1990-07-19 1992-03-12 Nec Corp 半導体レーザ
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP2778349B2 (ja) 1992-04-10 1998-07-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体の電極
JPH06310500A (ja) * 1993-01-22 1994-11-04 Toshiba Corp 半導体装置の製造方法
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5654228A (en) * 1995-03-17 1997-08-05 Motorola VCSEL having a self-aligned heat sink and method of making
JP3511970B2 (ja) 1995-06-15 2004-03-29 日亜化学工業株式会社 窒化物半導体発光素子
DE19611046A1 (de) * 1996-03-20 1997-09-25 Siemens Ag Halbleitervorrichtung
US5811927A (en) * 1996-06-21 1998-09-22 Motorola, Inc. Method for affixing spacers within a flat panel display
JP3087829B2 (ja) 1996-10-14 2000-09-11 日亜化学工業株式会社 窒化物半導体素子の製造方法
US6210479B1 (en) * 1999-02-26 2001-04-03 International Business Machines Corporation Product and process for forming a semiconductor structure on a host substrate
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6559038B2 (en) * 1997-11-18 2003-05-06 Technologies And Devices International, Inc. Method for growing p-n heterojunction-based structures utilizing HVPE techniques
KR19990052640A (ko) * 1997-12-23 1999-07-15 김효근 오믹접촉 형성을 이용한 다이오드용 금속박막및 그의 제조방법
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
JP3847477B2 (ja) 1998-12-17 2006-11-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
DE19921987B4 (de) 1998-05-13 2007-05-16 Toyoda Gosei Kk Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen
US6803243B2 (en) * 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
JP3525061B2 (ja) * 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
JP3531722B2 (ja) 1998-12-28 2004-05-31 信越半導体株式会社 発光ダイオードの製造方法
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
US6426512B1 (en) * 1999-03-05 2002-07-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
JP2000294837A (ja) 1999-04-05 2000-10-20 Stanley Electric Co Ltd 窒化ガリウム系化合物半導体発光素子
US6385837B1 (en) * 1999-04-05 2002-05-14 Central Motor Wheel Co., Ltd. Method and apparatus for fixedly connecting threaded tubes, and recording medium storing control program for practicing or controlling those method and apparatus
US6020261A (en) * 1999-06-01 2000-02-01 Motorola, Inc. Process for forming high aspect ratio circuit features
JP4189710B2 (ja) 1999-07-16 2008-12-03 Ｄｏｗａエレクトロニクス株式会社 発光ダイオードの製造方法
JP2001049491A (ja) 1999-08-04 2001-02-20 Fujitsu Ltd Ｃｕ電解めっき成膜方法
JP3633447B2 (ja) 1999-09-29 2005-03-30 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
US6492661B1 (en) * 1999-11-04 2002-12-10 Fen-Ren Chien Light emitting semiconductor device having reflection layer structure
AU4139101A (en) * 1999-12-03 2001-06-12 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6514782B1 (en) 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
JP4501225B2 (ja) 2000-02-21 2010-07-14 日亜化学工業株式会社 発光素子および発光素子の製造方法
JP2001237461A (ja) 2000-02-22 2001-08-31 Toshiba Corp 半導体発光素子
KR20010085722A (ko) 2000-02-29 2001-09-07 추후제출 반도체 물질상에서의 선택적인 레이저 어닐
JP4060511B2 (ja) * 2000-03-28 2008-03-12 パイオニア株式会社 窒化物半導体素子の分離方法
EP1277241B1 (de) * 2000-04-26 2017-12-13 OSRAM Opto Semiconductors GmbH Lumineszenzdiodenchip auf der basis von gan
JP2002083999A (ja) * 2000-06-21 2002-03-22 Sharp Corp 半導体発光素子
US6420732B1 (en) * 2000-06-26 2002-07-16 Luxnet Corporation Light emitting diode of improved current blocking and light extraction structure
JP4024994B2 (ja) * 2000-06-30 2007-12-19 株式会社東芝 半導体発光素子
US6661028B2 (en) * 2000-08-01 2003-12-09 United Epitaxy Company, Ltd. Interface texturing for light-emitting device
TW456058B (en) * 2000-08-10 2001-09-21 United Epitaxy Co Ltd Light emitting diode and the manufacturing method thereof
US6562648B1 (en) 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
TW466784B (en) * 2000-09-19 2001-12-01 United Epitaxy Co Ltd Method to manufacture high luminescence LED by using glass pasting
TW475276B (en) 2000-11-07 2002-02-01 Ind Tech Res Inst GaN based III-V compound semiconductor light-emitting device
DE10060439A1 (de) * 2000-12-05 2002-06-13 Osram Opto Semiconductors Gmbh Kontaktmetallisierung für GaN-basierende Halbleiterstrukturen und Verfahren zu deren Herstellung
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP3970530B2 (ja) * 2001-02-19 2007-09-05 三菱電機株式会社 半導体装置およびその製造方法
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
CN1185720C (zh) 2001-03-05 2005-01-19 全新光电科技股份有限公司 一种镀有金属反射镜膜基板的发光二极管及其制造方法
US6468824B2 (en) * 2001-03-22 2002-10-22 Uni Light Technology Inc. Method for forming a semiconductor device having a metallic substrate
US6589857B2 (en) * 2001-03-23 2003-07-08 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor film
KR100482174B1 (ko) 2001-08-08 2005-04-13 삼성전기주식회사 기판제거 기술을 이용한 GaN계 LED 제작 방법
US20030064535A1 (en) * 2001-09-28 2003-04-03 Kub Francis J. Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US6455340B1 (en) 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
ATE445233T1 (de) * 2002-01-28 2009-10-15 Nichia Corp Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
JP2003243700A (ja) * 2002-02-12 2003-08-29 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP4242599B2 (ja) 2002-04-08 2009-03-25 パナソニック株式会社 窒化物半導体装置の製造方法及び窒化物半導体基板の製造方法
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
JP3962282B2 (ja) * 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
JP3962283B2 (ja) 2002-05-29 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
JP2004014938A (ja) * 2002-06-10 2004-01-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2004088083A (ja) 2002-06-25 2004-03-18 Matsushita Electric Ind Co Ltd 半導体発光素子、その製造方法及びその実装方法
TW540171B (en) 2002-07-18 2003-07-01 United Epitaxy Co Ltd Manufacturing method of high-power light emitting diode
JP2004072052A (ja) 2002-08-09 2004-03-04 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6649437B1 (en) * 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
KR100497127B1 (ko) 2002-09-05 2005-06-28 삼성전기주식회사 질화갈륨계 반도체 엘이디 소자
US20040104395A1 (en) * 2002-11-28 2004-06-03 Shin-Etsu Handotai Co., Ltd. Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device
KR100495215B1 (ko) 2002-12-27 2005-06-14 삼성전기주식회사 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법
US6825559B2 (en) * 2003-01-02 2004-11-30 Cree, Inc. Group III nitride based flip-chip intergrated circuit and method for fabricating
US7338822B2 (en) * 2003-05-09 2008-03-04 Cree, Inc. LED fabrication via ion implant isolation
JP4295669B2 (ja) 2003-05-22 2009-07-15 パナソニック株式会社 半導体素子の製造方法
US7244628B2 (en) * 2003-05-22 2007-07-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor devices
KR100483049B1 (ko) 2003-06-03 2005-04-15 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드의 제조방법
US6921924B2 (en) * 2003-06-18 2005-07-26 United Epitaxy Company, Ltd Semiconductor light-emitting device
US6967346B2 (en) * 2003-08-02 2005-11-22 Formosa Epitaxy Incorporation Light emitting diode structure and manufacture method thereof
US6958494B2 (en) * 2003-08-14 2005-10-25 Dicon Fiberoptics, Inc. Light emitting diodes with current spreading layer
EP1668687A4 (en) 2003-09-19 2007-11-07 Tinggi Tech Private Ltd FABRICATION OF A CONDUCTIVE METAL LAYER ON SEMICONDUCTOR COMPONENTS
CN101335320B (zh) * 2003-09-19 2012-06-06 霆激科技股份有限公司 用于制作发光器件的方法
US6911376B2 (en) * 2003-10-01 2005-06-28 Wafermasters Selective heating using flash anneal
TWI313071B (en) * 2003-10-15 2009-08-01 Epistar Corporatio Light-emitting semiconductor device having enhanced brightness
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
US7012281B2 (en) * 2003-10-30 2006-03-14 Epistar Corporation Light emitting diode device and manufacturing method
AU2003296426A1 (en) 2003-12-09 2005-07-21 The Regents Of The University Of California Highly efficient gallium nitride based light emitting diodes via surface roughening
US7033912B2 (en) * 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
JP4647216B2 (ja) 2004-02-19 2011-03-09 信越半導体株式会社 ＧａＰ発光素子の製造方法
EP1730790B1 (en) 2004-03-15 2011-11-09 Tinggi Technologies Private Limited Fabrication of semiconductor devices
US8309377B2 (en) 2004-04-07 2012-11-13 Tinggi Technologies Private Limited Fabrication of reflective layer on semiconductor light emitting devices
WO2005104780A2 (en) 2004-04-28 2005-11-10 Verticle, Inc Vertical structure semiconductor devices
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
TWI433343B (zh) * 2004-06-22 2014-04-01 維帝克股份有限公司 具有改良光輸出的垂直構造半導體裝置
WO2006065010A1 (en) * 2004-12-13 2006-06-22 Lg Chem, Ltd. METHOD FOR MANUFACTURING G a N-BASED LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY
US20060154393A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Systems and methods for removing operating heat from a light emitting diode
US7195944B2 (en) * 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
US7186580B2 (en) * 2005-01-11 2007-03-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US20060151801A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Light emitting diode with thermo-electric cooler
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
JP4980615B2 (ja) 2005-02-08 2012-07-18 ローム株式会社 半導体発光素子およびその製法
US7348212B2 (en) * 2005-09-13 2008-03-25 Philips Lumileds Lighting Company Llc Interconnects for semiconductor light emitting devices
US20070029541A1 (en) * 2005-08-04 2007-02-08 Huoping Xin High efficiency light emitting device
SG131803A1 (en) 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
SG133432A1 (en) 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices

Similar Documents

Publication Publication Date Title
JP2009510765A5 (enExample)
TWI305425B (enExample)
JP2010531058A5 (enExample)
TWI222758B (en) Radiation-emitting thin-layer semiconductor-component on GaN-basis
WO2008129963A1 (ja) 半導体発光素子およびその製造方法
JP2011513957A5 (enExample)
JP2019514217A5 (ja) 高密度のマルチｌｅｄチップ、およびこれを製造する方法
TW200735419A (en) Nitride semiconductor light-emitting element
TWI266439B (en) Semiconductor light emitting device and its manufacturing method
WO2007105626A1 (ja) 発光素子
EP2172981A3 (fr) Cellule photovoltaïque a hétérojonction à deux dopages et procédé de fabrication.
JP2004087908A5 (enExample)
JP2008091862A (ja) 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
TW200608607A (en) Semiconductor light-emitting device and manufacturing method thereof
JP2004535058A5 (enExample)
JP2007158133A5 (enExample)
JP2008506547A5 (enExample)
JP2008509562A5 (enExample)
US8113903B2 (en) Fabrication method of light-emitting device
JP2000114599A5 (enExample)
JP2010186159A5 (enExample)
JP2007184585A5 (enExample)
JP2012222082A (ja) 発光ダイオード、発光ダイオードランプ及び照明装置
TW200419864A (en) Multi-wavelength semiconductor laser device and manufacturing method thereof
JP5496856B2 (ja) 光起電力素子の製造方法